TW289141B - - Google Patents

Info

Publication number
TW289141B
TW289141B TW085100830A TW85100830A TW289141B TW 289141 B TW289141 B TW 289141B TW 085100830 A TW085100830 A TW 085100830A TW 85100830 A TW85100830 A TW 85100830A TW 289141 B TW289141 B TW 289141B
Authority
TW
Taiwan
Application number
TW085100830A
Other languages
Chinese (zh)
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Application granted granted Critical
Publication of TW289141B publication Critical patent/TW289141B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10P74/23—
    • H10P74/203—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/852—Manufacture, treatment, or detection of nanostructure with scanning probe for detection of specific nanostructure sample or nanostructure-related property
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/868—Scanning probe structure with optical means
    • Y10S977/869—Optical microscope
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/88—Manufacture, treatment, or detection of nanostructure with arrangement, process, or apparatus for testing
    • Y10S977/881—Microscopy or spectroscopy, e.g. sem, tem
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/888—Shaping or removal of materials, e.g. etching
TW085100830A 1994-12-29 1996-01-24 TW289141B (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US36635794A 1994-12-29 1994-12-29

Publications (1)

Publication Number Publication Date
TW289141B true TW289141B (en:Method) 1996-10-21

Family

ID=23442681

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085100830A TW289141B (en:Method) 1994-12-29 1996-01-24

Country Status (6)

Country Link
US (1) US5804460A (en:Method)
EP (1) EP0720216B1 (en:Method)
KR (1) KR100367535B1 (en:Method)
DE (1) DE69523274D1 (en:Method)
SG (1) SG34349A1 (en:Method)
TW (1) TW289141B (en:Method)

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* Cited by examiner, † Cited by third party
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KR0144489B1 (ko) * 1995-10-04 1998-07-01 김주용 반도체소자의 공정결함 검사방법
US6054710A (en) * 1997-12-18 2000-04-25 Cypress Semiconductor Corp. Method and apparatus for obtaining two- or three-dimensional information from scanning electron microscopy
US6326618B1 (en) 1999-07-02 2001-12-04 Agere Systems Guardian Corp. Method of analyzing semiconductor surface with patterned feature using line width metrology
US6265235B1 (en) 1999-08-25 2001-07-24 Lucent Technologies, Inc. Method of sectioning of photoresist for shape evaluation
US6235440B1 (en) 1999-11-12 2001-05-22 Taiwan Semiconductor Manufacturing Company Method to control gate CD
US6570157B1 (en) * 2000-06-09 2003-05-27 Advanced Micro Devices, Inc. Multi-pitch and line calibration for mask and wafer CD-SEM system
US6573498B1 (en) * 2000-06-30 2003-06-03 Advanced Micro Devices, Inc. Electric measurement of reference sample in a CD-SEM and method for calibration
US6573497B1 (en) * 2000-06-30 2003-06-03 Advanced Micro Devices, Inc. Calibration of CD-SEM by e-beam induced current measurement
AU2001281127A1 (en) * 2000-09-27 2002-04-08 Advanced Micro Devices Inc. Fault detection method and apparatus using multiple dimension measurements
US6621081B2 (en) * 2001-01-10 2003-09-16 International Business Machines Corporation Method of pole tip sample preparation using FIB
US7027146B1 (en) * 2002-06-27 2006-04-11 Kla-Tencor Technologies Corp. Methods for forming a calibration standard and calibration standards for inspection systems
US6862545B1 (en) * 2003-04-03 2005-03-01 Taiwan Semiconductor Manufacturing Co., Ltd Linewidth measurement tool calibration method employing linewidth standard
JP5361137B2 (ja) * 2007-02-28 2013-12-04 株式会社日立ハイテクノロジーズ 荷電粒子ビーム測長装置
US20130245985A1 (en) * 2012-03-14 2013-09-19 Kla-Tencor Corporation Calibration Of An Optical Metrology System For Critical Dimension Application Matching
US10458912B2 (en) * 2016-08-31 2019-10-29 Kla-Tencor Corporation Model based optical measurements of semiconductor structures with anisotropic dielectric permittivity
US12548734B2 (en) * 2022-12-22 2026-02-10 Applied Materials Israel Ltd. In-line depth measurements by AFM
CN116525480B (zh) * 2023-05-10 2023-11-10 广东空天科技研究院(南沙) 一种基于显微图像的激光栅线成形质量自动检测方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434673A (en) * 1977-08-23 1979-03-14 Hitachi Ltd Micro-distance measuring device for scan-type electronic microscope
JPS6282314A (ja) * 1985-10-08 1987-04-15 Hitachi Ltd 光度差ステレオ計測方式
US4766411A (en) * 1986-05-29 1988-08-23 U.S. Philips Corporation Use of compositionally modulated multilayer thin films as resistive material
GB8622976D0 (en) * 1986-09-24 1986-10-29 Trialsite Ltd Scanning electron microscopes
JPH01311551A (ja) * 1988-06-08 1989-12-15 Toshiba Corp パターン形状測定装置
JPH0687003B2 (ja) * 1990-02-09 1994-11-02 株式会社日立製作所 走査型トンネル顕微鏡付き走査型電子顕微鏡
US5229607A (en) * 1990-04-19 1993-07-20 Hitachi, Ltd. Combination apparatus having a scanning electron microscope therein
US5140164A (en) * 1991-01-14 1992-08-18 Schlumberger Technologies, Inc. Ic modification with focused ion beam system
US5106771A (en) * 1991-06-05 1992-04-21 At&T Bell Laboratories GaAs MESFETs with enhanced Schottky barrier
US5280437A (en) * 1991-06-28 1994-01-18 Digital Equipment Corporation Structure and method for direct calibration of registration measurement systems to actual semiconductor wafer process topography
IT1251393B (it) * 1991-09-04 1995-05-09 St Microelectronics Srl Procedimento per la realizzazione di strutture metrologiche particolarmente per l'analisi dell'accuratezza di strumenti di misura di allineamento su substrati processati.
US5373232A (en) * 1992-03-13 1994-12-13 The United States Of America As Represented By The Secretary Of Commerce Method of and articles for accurately determining relative positions of lithographic artifacts
US5444242A (en) * 1992-09-29 1995-08-22 Physical Electronics Inc. Scanning and high resolution electron spectroscopy and imaging

Also Published As

Publication number Publication date
KR100367535B1 (ko) 2003-03-06
EP0720216A2 (en) 1996-07-03
SG34349A1 (en) 1996-12-06
KR960026746A (ko) 1996-07-22
EP0720216B1 (en) 2001-10-17
EP0720216A3 (en) 1997-05-21
US5804460A (en) 1998-09-08
DE69523274D1 (de) 2001-11-22

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees