TW288251B - - Google Patents

Info

Publication number
TW288251B
TW288251B TW083100389A TW83100389A TW288251B TW 288251 B TW288251 B TW 288251B TW 083100389 A TW083100389 A TW 083100389A TW 83100389 A TW83100389 A TW 83100389A TW 288251 B TW288251 B TW 288251B
Authority
TW
Taiwan
Application number
TW083100389A
Original Assignee
Tokyo Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP05092511A external-priority patent/JP3077009B2/ja
Application filed by Tokyo Electron Co Ltd filed Critical Tokyo Electron Co Ltd
Application granted granted Critical
Publication of TW288251B publication Critical patent/TW288251B/zh

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW083100389A 1993-01-12 1994-01-18 TW288251B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1919393 1993-01-12
JP1921793 1993-01-12
JP05092511A JP3077009B2 (ja) 1993-03-27 1993-03-27 プラズマ処理装置

Publications (1)

Publication Number Publication Date
TW288251B true TW288251B (zh) 1996-10-11

Family

ID=27282531

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083100389A TW288251B (zh) 1993-01-12 1994-01-18

Country Status (3)

Country Link
US (5) US5795429A (zh)
KR (1) KR100238627B1 (zh)
TW (1) TW288251B (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI417931B (zh) * 2005-10-28 2013-12-01 Edwards Ltd 電漿清除設備
TWI581673B (zh) * 2011-09-13 2017-05-01
TWI618455B (zh) * 2010-12-17 2018-03-11 瑪森科技公司 用於電漿處理之感應耦合電漿源
TWI655882B (zh) * 2016-12-30 2019-04-01 中微半導體設備（上海）有限公司 Inductively coupled plasma processing device
TWI742208B (zh) * 2016-12-15 2021-10-11 台灣積體電路製造股份有限公司 離子植入機以及將離子植入半導體基板中的方法

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TWI417931B (zh) * 2005-10-28 2013-12-01 Edwards Ltd 電漿清除設備
US9333460B2 (en) 2005-10-28 2016-05-10 Edwards Limited Plasma treatment device
TWI618455B (zh) * 2010-12-17 2018-03-11 瑪森科技公司 用於電漿處理之感應耦合電漿源
TWI581673B (zh) * 2011-09-13 2017-05-01
TWI742208B (zh) * 2016-12-15 2021-10-11 台灣積體電路製造股份有限公司 離子植入機以及將離子植入半導體基板中的方法
TWI655882B (zh) * 2016-12-30 2019-04-01 中微半導體設備（上海）有限公司 Inductively coupled plasma processing device

Also Published As

Publication number Publication date
US5938883A (en) 1999-08-17
US5795429A (en) 1998-08-18
US6136139A (en) 2000-10-24
US6350347B1 (en) 2002-02-26
KR100238627B1 (ko) 2000-01-15
US6265031B1 (en) 2001-07-24

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