TW285778B - - Google Patents
Info
- Publication number
- TW285778B TW285778B TW84112780A TW84112780A TW285778B TW 285778 B TW285778 B TW 285778B TW 84112780 A TW84112780 A TW 84112780A TW 84112780 A TW84112780 A TW 84112780A TW 285778 B TW285778 B TW 285778B
- Authority
- TW
- Taiwan
Links
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33160894A JP3418647B2 (ja) | 1994-12-09 | 1994-12-09 | 半導体装置作製方法および結晶成長促進剤 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW285778B true TW285778B (pt) | 1996-09-11 |
Family
ID=18245564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW84112780A TW285778B (pt) | 1994-12-09 | 1995-11-30 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP3418647B2 (pt) |
| KR (1) | KR100444655B1 (pt) |
| CN (1) | CN1090813C (pt) |
| TW (1) | TW285778B (pt) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0144643B1 (ko) * | 1994-12-28 | 1998-08-17 | 심상철 | 금속흡착법에 의한 다결정 규소박막의 제조방법 |
| JPH10228248A (ja) | 1996-12-09 | 1998-08-25 | Semiconductor Energy Lab Co Ltd | アクティブマトリクス表示装置およびその作製方法 |
| US6794229B2 (en) | 2000-04-28 | 2004-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for semiconductor device |
| CN100337304C (zh) * | 2003-08-22 | 2007-09-12 | 友达光电股份有限公司 | 形成多晶硅层的方法 |
| JP2007108785A (ja) * | 2006-12-25 | 2007-04-26 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| CN105632923B (zh) * | 2014-10-28 | 2018-11-16 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW226478B (en) * | 1992-12-04 | 1994-07-11 | Semiconductor Energy Res Co Ltd | Semiconductor device and method for manufacturing the same |
| EP0612102B1 (en) * | 1993-02-15 | 2001-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Process for the fabrication of a crystallised semiconductor layer |
-
1994
- 1994-12-09 JP JP33160894A patent/JP3418647B2/ja not_active Expired - Fee Related
-
1995
- 1995-11-30 TW TW84112780A patent/TW285778B/zh not_active IP Right Cessation
- 1995-12-08 KR KR1019950047680A patent/KR100444655B1/ko not_active IP Right Cessation
- 1995-12-09 CN CN95121314A patent/CN1090813C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR100444655B1 (ko) | 2004-11-26 |
| JPH08167572A (ja) | 1996-06-25 |
| CN1132409A (zh) | 1996-10-02 |
| JP3418647B2 (ja) | 2003-06-23 |
| CN1090813C (zh) | 2002-09-11 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |