TW285778B - - Google Patents

Info

Publication number
TW285778B
TW285778B TW84112780A TW84112780A TW285778B TW 285778 B TW285778 B TW 285778B TW 84112780 A TW84112780 A TW 84112780A TW 84112780 A TW84112780 A TW 84112780A TW 285778 B TW285778 B TW 285778B
Authority
TW
Taiwan
Application number
TW84112780A
Other languages
Chinese (zh)
Original Assignee
Handotai Energy Kenkyusho Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Handotai Energy Kenkyusho Kk filed Critical Handotai Energy Kenkyusho Kk
Application granted granted Critical
Publication of TW285778B publication Critical patent/TW285778B/zh

Links

TW84112780A 1994-12-09 1995-11-30 TW285778B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33160894A JP3418647B2 (ja) 1994-12-09 1994-12-09 半導体装置作製方法および結晶成長促進剤

Publications (1)

Publication Number Publication Date
TW285778B true TW285778B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1996-09-11

Family

ID=18245564

Family Applications (1)

Application Number Title Priority Date Filing Date
TW84112780A TW285778B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1994-12-09 1995-11-30

Country Status (4)

Country Link
JP (1) JP3418647B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR100444655B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN (1) CN1090813C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW285778B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0144643B1 (ko) * 1994-12-28 1998-08-17 심상철 금속흡착법에 의한 다결정 규소박막의 제조방법
JPH10228248A (ja) 1996-12-09 1998-08-25 Semiconductor Energy Lab Co Ltd アクティブマトリクス表示装置およびその作製方法
JPH10198292A (ja) 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6794229B2 (en) 2000-04-28 2004-09-21 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device
CN100337304C (zh) * 2003-08-22 2007-09-12 友达光电股份有限公司 形成多晶硅层的方法
JP2007108785A (ja) * 2006-12-25 2007-04-26 Semiconductor Energy Lab Co Ltd 半導体装置
CN105632923B (zh) * 2014-10-28 2018-11-16 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW226478B (en) * 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
DE69428387T2 (de) * 1993-02-15 2002-07-04 Semiconductor Energy Lab Herstellungsverfahren für eine kristallisierte Halbleiterschicht

Also Published As

Publication number Publication date
JP3418647B2 (ja) 2003-06-23
CN1090813C (zh) 2002-09-11
JPH08167572A (ja) 1996-06-25
CN1132409A (zh) 1996-10-02
KR100444655B1 (ko) 2004-11-26

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees