TW285763B - - Google Patents

Info

Publication number
TW285763B
TW285763B TW084100059A TW84100059A TW285763B TW 285763 B TW285763 B TW 285763B TW 084100059 A TW084100059 A TW 084100059A TW 84100059 A TW84100059 A TW 84100059A TW 285763 B TW285763 B TW 285763B
Authority
TW
Taiwan
Application number
TW084100059A
Other languages
Chinese (zh)
Original Assignee
Mitsubishi Electric Machine
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Machine filed Critical Mitsubishi Electric Machine
Application granted granted Critical
Publication of TW285763B publication Critical patent/TW285763B/zh

Links

TW084100059A 1994-12-08 1995-01-06 TW285763B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30504694A JP3384896B2 (ja) 1994-12-08 1994-12-08 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW285763B true TW285763B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1996-09-11

Family

ID=17940466

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084100059A TW285763B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1994-12-08 1995-01-06

Country Status (2)

Country Link
JP (1) JP3384896B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW285763B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103633007A (zh) * 2012-08-17 2014-03-12 上海华虹宏力半导体制造有限公司 防止浅沟槽隔离边缘硅接触孔漏电的方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3941133B2 (ja) 1996-07-18 2007-07-04 富士通株式会社 半導体装置およびその製造方法
KR100236067B1 (ko) * 1996-09-02 1999-12-15 김영환 반도체 메모리 소자 제조방법
JP2000058782A (ja) 1998-08-06 2000-02-25 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2000077520A (ja) 1998-08-28 2000-03-14 Fujitsu Ltd 半導体装置の製造方法
KR100451759B1 (ko) * 1998-11-10 2004-11-16 주식회사 하이닉스반도체 반도체소자제조방법
JP3205306B2 (ja) 1998-12-08 2001-09-04 松下電器産業株式会社 半導体装置およびその製造方法
JP4602818B2 (ja) * 2005-03-30 2010-12-22 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5003743B2 (ja) * 2009-10-20 2012-08-15 富士通セミコンダクター株式会社 半導体装置とその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103633007A (zh) * 2012-08-17 2014-03-12 上海华虹宏力半导体制造有限公司 防止浅沟槽隔离边缘硅接触孔漏电的方法

Also Published As

Publication number Publication date
JP3384896B2 (ja) 2003-03-10
JPH08162635A (ja) 1996-06-21

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