TW282562B - - Google Patents

Info

Publication number
TW282562B
TW282562B TW083112086A TW83112086A TW282562B TW 282562 B TW282562 B TW 282562B TW 083112086 A TW083112086 A TW 083112086A TW 83112086 A TW83112086 A TW 83112086A TW 282562 B TW282562 B TW 282562B
Authority
TW
Taiwan
Application number
TW083112086A
Other languages
Chinese (zh)
Original Assignee
Gasonics Internat Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gasonics Internat Corp filed Critical Gasonics Internat Corp
Application granted granted Critical
Publication of TW282562B publication Critical patent/TW282562B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Furnace Details (AREA)
TW083112086A 1994-06-16 1994-12-23 TW282562B (show.php)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6158039A JPH088194A (ja) 1994-06-16 1994-06-16 気相成長機構および熱処理機構における加熱装置

Publications (1)

Publication Number Publication Date
TW282562B true TW282562B (show.php) 1996-08-01

Family

ID=15662953

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083112086A TW282562B (show.php) 1994-06-16 1994-12-23

Country Status (4)

Country Link
US (1) US5498292A (show.php)
JP (1) JPH088194A (show.php)
KR (1) KR960002523A (show.php)
TW (1) TW282562B (show.php)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6419984B1 (en) * 1995-08-07 2002-07-16 Taiwan Semiconductor Manufacturing Company Low pressure chemical vapor deposition with reduced particulate contamination
US6111225A (en) * 1996-02-23 2000-08-29 Tokyo Electron Limited Wafer processing apparatus with a processing vessel, upper and lower separately sealed heating vessels, and means for maintaining the vessels at predetermined pressures
TW506620U (en) * 1996-03-15 2002-10-11 Asahi Glass Co Ltd Low pressure CVD apparatus
DE19711268B4 (de) * 1996-03-18 2004-09-16 Boe-Hydis Technology Co., Ltd. Chemisches Dampfabscheidungsverfahren mit induktiv gekoppeltem Plasma, Verwendung des Verfahrens zum Herstellen von Dünnschichttransistoren und durch das Verfahren hergestellte Dünnschichten aus amorphen Silizium
US6133550A (en) * 1996-03-22 2000-10-17 Sandia Corporation Method and apparatus for thermal processing of semiconductor substrates
US5849582A (en) * 1997-05-01 1998-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Baking of photoresist on wafers
US6252202B1 (en) 1998-02-10 2001-06-26 Jeneric/Pentron, Inc. Furnace for heat treatment of dental materials
EP1120813B1 (en) * 2000-01-24 2006-05-03 Infineon Technologies SC300 GmbH & Co. KG Reactor for manufacturing of a semiconductor device
JP2002176310A (ja) * 2000-12-06 2002-06-21 Nippon Antenna Co Ltd ２共振アンテナ
TWI245329B (en) * 2001-11-14 2005-12-11 Anelva Corp Heating element CVD device and heating element CVD method using the same
US6670071B2 (en) * 2002-01-15 2003-12-30 Quallion Llc Electric storage battery construction and method of manufacture
US6800172B2 (en) * 2002-02-22 2004-10-05 Micron Technology, Inc. Interfacial structure for semiconductor substrate processing chambers and substrate transfer chambers and for semiconductor substrate processing chambers and accessory attachments, and semiconductor substrate processor
US6814813B2 (en) * 2002-04-24 2004-11-09 Micron Technology, Inc. Chemical vapor deposition apparatus
US6858264B2 (en) 2002-04-24 2005-02-22 Micron Technology, Inc. Chemical vapor deposition methods
US6838114B2 (en) 2002-05-24 2005-01-04 Micron Technology, Inc. Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
US6821347B2 (en) * 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
AU2003253874A1 (en) * 2002-07-15 2004-02-02 Aviza Technology, Inc. Method and apparatus for supporting semiconductor wafers
US6955725B2 (en) * 2002-08-15 2005-10-18 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
TW589396B (en) * 2003-01-07 2004-06-01 Arima Optoelectronics Corp Chemical vapor deposition reactor
KR20040069449A (ko) * 2003-01-29 2004-08-06 삼성전자주식회사 화학기상증착을 위한 퍼니스 장치
US6926775B2 (en) * 2003-02-11 2005-08-09 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
US7335396B2 (en) * 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
JP3802889B2 (ja) * 2003-07-01 2006-07-26 東京エレクトロン株式会社 熱処理装置及びその校正方法
US7235138B2 (en) * 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
US7344755B2 (en) * 2003-08-21 2008-03-18 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers
US7422635B2 (en) 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US7056806B2 (en) 2003-09-17 2006-06-06 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
US7282239B2 (en) * 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7323231B2 (en) * 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7581511B2 (en) * 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7647886B2 (en) * 2003-10-15 2010-01-19 Micron Technology, Inc. Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
US7258892B2 (en) * 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
US7906393B2 (en) * 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
US7584942B2 (en) * 2004-03-31 2009-09-08 Micron Technology, Inc. Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers
US20050249873A1 (en) * 2004-05-05 2005-11-10 Demetrius Sarigiannis Apparatuses and methods for producing chemically reactive vapors used in manufacturing microelectronic devices
US8133554B2 (en) * 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) * 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US20060165873A1 (en) * 2005-01-25 2006-07-27 Micron Technology, Inc. Plasma detection and associated systems and methods for controlling microfeature workpiece deposition processes
US20060237138A1 (en) * 2005-04-26 2006-10-26 Micron Technology, Inc. Apparatuses and methods for supporting microelectronic devices during plasma-based fabrication processes
TWI442013B (zh) * 2011-10-04 2014-06-21 Kern Energy Entpr Co Ltd 熱處理爐結構
CN106288760A (zh) * 2015-05-13 2017-01-04 章小进 一种立式加热炉
DE102018204107A1 (de) * 2018-03-17 2019-09-19 centrotherm international AG Heizeinheit für Horizontalofen

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1273499A (en) * 1970-10-07 1972-05-10 Vnii Elektroter Micheskogo Obo Electric vacuum furnace
JPS6079729A (ja) * 1983-10-07 1985-05-07 Hitachi Ltd ウエハ酸化方式
JPS6095917A (ja) * 1983-10-29 1985-05-29 Gijutsu Joho Kenkyusho:Kk 熱処理炉
US4496693A (en) * 1983-12-01 1985-01-29 General Electric Company Compatibilization of polycarbonate blends
JPS6291494A (ja) * 1985-10-16 1987-04-25 Res Dev Corp Of Japan 化合物半導体単結晶成長方法及び装置
DE3539981C1 (de) * 1985-11-11 1987-06-11 Telog Systems Gmbh Verfahren und Vorrichtung zur Behandlung von Halbleitermaterialien
JP2583503B2 (ja) * 1987-05-08 1997-02-19 東京エレクトロン東北株式会社 熱処理装置
JPH0642474B2 (ja) * 1988-03-31 1994-06-01 株式会社東芝 半導体製造装置
DE3906075A1 (de) * 1989-02-27 1990-08-30 Soehlbrand Heinrich Dr Dipl Ch Verfahren zur thermischen behandlung von halbleitermaterialien und vorrichtung zur durchfuehrung desselben
JP2662722B2 (ja) * 1990-01-12 1997-10-15 東京エレクトロン株式会社 バッチ式熱処理装置
JP3230836B2 (ja) * 1992-04-09 2001-11-19 東京エレクトロン株式会社 熱処理装置
JP3253734B2 (ja) * 1992-06-19 2002-02-04 富士通株式会社 半導体装置製造用の石英製装置

Also Published As

Publication number Publication date
KR960002523A (ko) 1996-01-26
US5498292A (en) 1996-03-12
JPH088194A (ja) 1996-01-12

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