KR960002523A - 기상성장기구 및 열처리기구에 있어서의 가열장치 - Google Patents

기상성장기구 및 열처리기구에 있어서의 가열장치 Download PDF

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Publication number
KR960002523A
KR960002523A KR1019950000862A KR19950000862A KR960002523A KR 960002523 A KR960002523 A KR 960002523A KR 1019950000862 A KR1019950000862 A KR 1019950000862A KR 19950000862 A KR19950000862 A KR 19950000862A KR 960002523 A KR960002523 A KR 960002523A
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KR
South Korea
Prior art keywords
reaction tube
heat treatment
heating device
vapor phase
phase growth
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KR1019950000862A
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English (en)
Inventor
야스시 오자끼
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기시모또 요시노리
기시모또산교 가부시끼가이샤
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Application filed by 기시모또 요시노리, 기시모또산교 가부시끼가이샤 filed Critical 기시모또 요시노리
Publication of KR960002523A publication Critical patent/KR960002523A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Furnace Details (AREA)

Abstract

[목적] 통형체인 가열로에 있어서, 가장 방열율이 높은 단부의 개구부를 보조가열체로 폐쇄하고, 노내에 있어서 종전 형서하고 있었던 보조가열영역의 설치기구를 배제하고, 유효용적의 전부를 균열영역으로 하고, 이 균열영역의 용적에 준하여 피가공처리재량을 상승시키는 것, 열의 절약, 또, 장치전체의 용적의 소형화 등을 목적으로 한다.
[구성] 기상성장, 열확산 또는 열처리를 행하려 하는 피가공처리재(5)의 복수를 설정한 자세를 유지 정착한 지지체(6)를 내장할 수 있는 석영 혹은 상화규소 등으로 이루어지는 반응관(1)의 외주에, 이 반응관(1)의 전 길이를 원통형의 가열장치(4)에 의해 피복형성하는 장치로서, 이 가열장치(4)의 전후 양단에 있어서의 개구부를 보조가열체(4a)를 가지고 폐쇄하고, 내재시킨 반응관(1)을 포설하여 이루어지는 것이다.

Description

기상성장기구 및 열처리기구에 있어서의 가열장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 장치의 전체 단면도.

Claims (4)

  1. 가상성장, 열확산 또는 열처리를 행하려 하는 피가공처리재(5)의 복수를 설정한 자세를 유지정착한 지지체(6)를 내장할 수 있는 석영 혹은 탄화규소 등으로 이루어지는 반응관(1)의 외주에, 이 반응관(1)의 전 길이를 원통형의 가열장치(4)에 의해 피복형성하는 장치로서, 이 가열장치(4)의 전후 양단에 있어서의 개구부를 보조가열체(4a)를 가지고 폐쇄하고, 내재시킨 반응관(1)을 포설(包說)하여 이루어지는 것을 특징으로 하는 기상성장기구 및 열처리기구에 있어서의 가열장치.
  2. 제1항에 있어서, 반응관(1)의 전 길이를 피복형성하는 원통형의 가열장치(4)의 일단부로부터 돌출시킨 상기 반응관(1)에 연결되는 배기관(7)을 삽입관통시키는 도관삽입공(4al)을 뚫어 설치한 보조가열체(4a)를 가지고, 상기 배기도관(7)을 관통시키고, 또, 가열장치(4)의 개구부를 폐쇄하도록 접속하여 이루어지는 것을 특징으로 하는 기상성장기구 및 열처리기구에 있어서의 가열장치.
  3. 제1항에 있어서, 반응관(1)의 외주에, 이 반응관(1)의 전 길이를 가열장치(4)로 피복형성하는 장치로서, 상기 반응관(1)의 후단에, 피가공처리재(5)의 복수를 정착한 지지체(6)를 반입, 반출시키는 반송구(1c)를 개설하고, 이 반송구(1c)를 개폐하는 개폐문체(6)의 외측면에 보조가열체(4a)를 장착하여 이루어지는 것을 특징으로 하는 기상성장기구 및 열처리기구에 있어서의 가열장치.
  4. 제1항에 있어서, 반응관(1)의 일단에, 개폐한 반송구(1c)의 둘레 에지에 접속할 수 있는 플런지(8b)를 외주에 형성한 개폐문체(8)의 주부를 상기 반응관(1)의 반송구(1c)로부터 내방으로 삽입할 수 있는 함몰부(8c)를 요설(凹說)하고, 이 함몰부(8c)의 오목부에 보조가열체(4a)를 정착설치하여 이루어지는 것을 특징으로 하는 기상성장기구 및 열처리기구에 있어서의 가열장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950000862A 1994-06-16 1995-01-19 기상성장기구 및 열처리기구에 있어서의 가열장치 KR960002523A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-158039 1994-06-16
JP6158039A JPH088194A (ja) 1994-06-16 1994-06-16 気相成長機構および熱処理機構における加熱装置

Publications (1)

Publication Number Publication Date
KR960002523A true KR960002523A (ko) 1996-01-26

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US (1) US5498292A (ko)
JP (1) JPH088194A (ko)
KR (1) KR960002523A (ko)
TW (1) TW282562B (ko)

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Also Published As

Publication number Publication date
TW282562B (ko) 1996-08-01
JPH088194A (ja) 1996-01-12
US5498292A (en) 1996-03-12

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