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Application filed by Taiwan Semiconductor MfgfiledCriticalTaiwan Semiconductor Mfg
Priority to TW85100958ApriorityCriticalpatent/TW281783B/en
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Publication of TW281783BpublicationCriticalpatent/TW281783B/en
A method of removing photoresist particle on dry etch surface, that is applicable to the process of SRAM buried contact, comprises of: performing buried contact mask to substrate surface including gate oxide and polysilicon; etching polysilicon; implanting ion into buried contact to form buried contact in the substrate; performing oxygen plasma processing to removing photoresist particle adhesive force; washing with ion water to remove photoresist particle; etching gate oxide of buried contact; removing photoresist; removing most of photoresist particle before the second time etching to decrease element defect.
TW85100958A1996-01-261996-01-26Method of removing photoresist particle on dry etch surface
TW281783B
(en)