TW280006B - Method of decreasing antenna charge effect caused by etching polysilicon gate - Google Patents
Method of decreasing antenna charge effect caused by etching polysilicon gateInfo
- Publication number
- TW280006B TW280006B TW85100145A TW85100145A TW280006B TW 280006 B TW280006 B TW 280006B TW 85100145 A TW85100145 A TW 85100145A TW 85100145 A TW85100145 A TW 85100145A TW 280006 B TW280006 B TW 280006B
- Authority
- TW
- Taiwan
- Prior art keywords
- gate
- mixed gas
- high density
- effect
- density plasma
- Prior art date
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW85100145A TW280006B (en) | 1996-01-08 | 1996-01-08 | Method of decreasing antenna charge effect caused by etching polysilicon gate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW85100145A TW280006B (en) | 1996-01-08 | 1996-01-08 | Method of decreasing antenna charge effect caused by etching polysilicon gate |
Publications (1)
Publication Number | Publication Date |
---|---|
TW280006B true TW280006B (en) | 1996-07-01 |
Family
ID=51397560
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW85100145A TW280006B (en) | 1996-01-08 | 1996-01-08 | Method of decreasing antenna charge effect caused by etching polysilicon gate |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW280006B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6767838B1 (en) * | 1998-02-13 | 2004-07-27 | Hitachi, Ltd. | Method and apparatus for treating surface of semiconductor |
-
1996
- 1996-01-08 TW TW85100145A patent/TW280006B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6767838B1 (en) * | 1998-02-13 | 2004-07-27 | Hitachi, Ltd. | Method and apparatus for treating surface of semiconductor |
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