TW279270B - - Google Patents

Info

Publication number
TW279270B
TW279270B TW084109320A TW84109320A TW279270B TW 279270 B TW279270 B TW 279270B TW 084109320 A TW084109320 A TW 084109320A TW 84109320 A TW84109320 A TW 84109320A TW 279270 B TW279270 B TW 279270B
Authority
TW
Taiwan
Application number
TW084109320A
Other languages
Chinese (zh)
Original Assignee
Seiko Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Electron Co Ltd filed Critical Seiko Electron Co Ltd
Application granted granted Critical
Publication of TW279270B publication Critical patent/TW279270B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
TW084109320A 1994-08-19 1995-09-06 TW279270B (en, 2012)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19575894 1994-08-19
JP11344695 1995-05-11

Publications (1)

Publication Number Publication Date
TW279270B true TW279270B (en, 2012) 1996-06-21

Family

ID=26452421

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084109320A TW279270B (en, 2012) 1994-08-19 1995-09-06

Country Status (4)

Country Link
EP (1) EP0698923A1 (en, 2012)
KR (1) KR960009209A (en, 2012)
CN (1) CN1125899A (en, 2012)
TW (1) TW279270B (en, 2012)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076281A (ja) * 2000-08-30 2002-03-15 Seiko Instruments Inc 半導体装置およびその製造方法
JP2003307750A (ja) 2002-02-12 2003-10-31 Seiko Epson Corp 薄膜半導体装置及び電気光学装置、それらの製造方法並びにレチクル
JP4841220B2 (ja) 2005-10-14 2011-12-21 株式会社リコー 半導体装置
JP6284295B2 (ja) * 2012-09-14 2018-02-28 エイブリック株式会社 分圧回路
CN109860154A (zh) * 2019-03-01 2019-06-07 德淮半导体有限公司 电阻结构及其形成方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4620212A (en) * 1982-05-28 1986-10-28 Nec Corporation Semiconductor device with a resistor of polycrystalline silicon
JPS6483155A (en) * 1987-09-25 1989-03-28 Sony Corp Detecting circuit of fluctuation of external power supply voltage for semiconductor device
JPH0194648A (ja) * 1987-10-06 1989-04-13 Mitsubishi Electric Corp 半導体装置
JPH01253950A (ja) * 1988-04-01 1989-10-11 Nec Corp ポリシリコン抵抗を有する集積回路装置
CA2023172A1 (en) * 1990-08-13 1992-02-14 Francois L. Cordeau Method to manufacture double-poly capacitors

Also Published As

Publication number Publication date
EP0698923A1 (en) 1996-02-28
CN1125899A (zh) 1996-07-03
KR960009209A (ko) 1996-03-22

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees