TW278241B - Sense amplifying circuit - Google Patents

Sense amplifying circuit

Info

Publication number
TW278241B
TW278241B TW084111313A TW84111313A TW278241B TW 278241 B TW278241 B TW 278241B TW 084111313 A TW084111313 A TW 084111313A TW 84111313 A TW84111313 A TW 84111313A TW 278241 B TW278241 B TW 278241B
Authority
TW
Taiwan
Prior art keywords
pair
bit lines
sense amplifying
amplifying mechanism
amplifying circuit
Prior art date
Application number
TW084111313A
Other languages
Chinese (zh)
Inventor
Chan Hwang Moon
San Hwang Hong
Original Assignee
Samsug Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsug Electronics Co Ltd filed Critical Samsug Electronics Co Ltd
Application granted granted Critical
Publication of TW278241B publication Critical patent/TW278241B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)

Abstract

A kind of dynamic random-access memory device including a plurality of storage units comprising a plurality of bit lines, a plurality of word lines, in which each pair of bit lines is divided by transistor and storage units are at one side of each pair of bit lines, a second sense amplifying mechanism connected to that side of each pair of bit lines, a first sense amplifying mechanism connected to the other side of each pair of bit lines, a equivalent circuit connecting each pair of bit lines each other at that side, characterized in that: gangways of a pair of MOS transistors constituting the first sense amplifying mechanism are connected in series and to the other side of each pair of bit lines, each gate polar of said pair of MOStransistors is connected to that side of each pair of bit linescrossly, the common characteristics is that the serial connection of pair of MOS transistors is achieved through transistor used to fire the first sense amplifying mechanism.
TW084111313A 1994-12-28 1995-10-26 Sense amplifying circuit TW278241B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940038071A KR0143028B1 (en) 1994-12-28 1994-12-28 Sense amp circuit

Publications (1)

Publication Number Publication Date
TW278241B true TW278241B (en) 1996-06-11

Family

ID=19404400

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084111313A TW278241B (en) 1994-12-28 1995-10-26 Sense amplifying circuit

Country Status (3)

Country Link
JP (1) JPH08235863A (en)
KR (1) KR0143028B1 (en)
TW (1) TW278241B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100248868B1 (en) * 1996-12-14 2000-03-15 윤종용 Flash non-volatile semiconductor memory device and its operating mode controlling method
JP5248019B2 (en) 2007-01-09 2013-07-31 エルピーダメモリ株式会社 Semiconductor memory device and sense amplifier circuit thereof

Also Published As

Publication number Publication date
KR960025758A (en) 1996-07-20
KR0143028B1 (en) 1998-08-17
JPH08235863A (en) 1996-09-13

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees