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Application filed by Mos Electronics Taiwan IncfiledCriticalMos Electronics Taiwan Inc
Priority to TW84105484ApriorityCriticalpatent/TW277144B/en
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Publication of TW277144BpublicationCriticalpatent/TW277144B/en
A making method of photoresist imaging with anti-reflection coating comprises the steps of: covering one anti-reflection coating on one metal layer or metal polycide; forming one photoresist on anti-reflection coating; after being exposed and developed forming photoresist pattern as etching mask of later metal layer or metal polycide; It features that the anti-reflection coating material including CrO/CrOx is formed by reactive sputtering method.
TW84105484A1995-05-311995-05-31Making method of photoresist imaging with anti-reflection coating
TW277144B
(en)