|
JP3552845B2
(ja)
*
|
1996-04-25 |
2004-08-11 |
株式会社ルネサステクノロジ |
半導体装置の製造方法
|
|
JPH11181403A
(ja)
*
|
1997-12-18 |
1999-07-06 |
Hitachi Chem Co Ltd |
酸化セリウム研磨剤及び基板の研磨法
|
|
US6200901B1
(en)
|
1998-06-10 |
2001-03-13 |
Micron Technology, Inc. |
Polishing polymer surfaces on non-porous CMP pads
|
|
US6270395B1
(en)
|
1998-09-24 |
2001-08-07 |
Alliedsignal, Inc. |
Oxidizing polishing slurries for low dielectric constant materials
|
|
US6245690B1
(en)
*
|
1998-11-04 |
2001-06-12 |
Applied Materials, Inc. |
Method of improving moisture resistance of low dielectric constant films
|
|
US6169034B1
(en)
*
|
1998-11-25 |
2001-01-02 |
Advanced Micro Devices, Inc. |
Chemically removable Cu CMP slurry abrasive
|
|
WO2001000744A1
(en)
*
|
1999-06-28 |
2001-01-04 |
Nissan Chemical Industries, Ltd. |
Abrasive compound for glass hard disk platter
|
|
US6417098B1
(en)
*
|
1999-12-09 |
2002-07-09 |
Intel Corporation |
Enhanced surface modification of low K carbon-doped oxide
|
|
US6841470B2
(en)
*
|
1999-12-31 |
2005-01-11 |
Intel Corporation |
Removal of residue from a substrate
|
|
US6416685B1
(en)
*
|
2000-04-11 |
2002-07-09 |
Honeywell International Inc. |
Chemical mechanical planarization of low dielectric constant materials
|
|
US6736992B2
(en)
*
|
2000-04-11 |
2004-05-18 |
Honeywell International Inc. |
Chemical mechanical planarization of low dielectric constant materials
|
|
US6733553B2
(en)
*
|
2000-04-13 |
2004-05-11 |
Showa Denko Kabushiki Kaisha |
Abrasive composition for polishing semiconductor device and method for producing semiconductor device using the same
|
|
US6402851B1
(en)
*
|
2000-05-19 |
2002-06-11 |
International Business Machines Corporation |
Lanthanide oxide dissolution from glass surface
|
|
US6653242B1
(en)
|
2000-06-30 |
2003-11-25 |
Applied Materials, Inc. |
Solution to metal re-deposition during substrate planarization
|
|
CN1177012C
(zh)
*
|
2000-10-02 |
2004-11-24 |
三井金属鉱业株式会社 |
铈基磨料和铈基磨料的制造方法
|
|
US6569349B1
(en)
|
2000-10-23 |
2003-05-27 |
Applied Materials Inc. |
Additives to CMP slurry to polish dielectric films
|
|
US6326305B1
(en)
*
|
2000-12-05 |
2001-12-04 |
Advanced Micro Devices, Inc. |
Ceria removal in chemical-mechanical polishing of integrated circuits
|
|
US20040192172A1
(en)
*
|
2001-06-14 |
2004-09-30 |
Dan Towery |
Oxidizing polishing slurries for low dielectric constant materials
|
|
US6592742B2
(en)
|
2001-07-13 |
2003-07-15 |
Applied Materials Inc. |
Electrochemically assisted chemical polish
|
|
US6811470B2
(en)
|
2001-07-16 |
2004-11-02 |
Applied Materials Inc. |
Methods and compositions for chemical mechanical polishing shallow trench isolation substrates
|
|
US6677239B2
(en)
|
2001-08-24 |
2004-01-13 |
Applied Materials Inc. |
Methods and compositions for chemical mechanical polishing
|
|
US6638145B2
(en)
*
|
2001-08-31 |
2003-10-28 |
Koninklijke Philips Electronics N.V. |
Constant pH polish and scrub
|
|
US6585567B1
(en)
|
2001-08-31 |
2003-07-01 |
Koninklijke Philips Electronics N.V. |
Short CMP polish method
|
|
US6580586B1
(en)
|
2001-11-21 |
2003-06-17 |
International Business Machines Corporation |
Magnetic transducer with recessed magnetic elements
|
|
KR100445760B1
(ko)
*
|
2001-12-28 |
2004-08-25 |
제일모직주식회사 |
금속오염이 적은 금속배선 연마용 슬러리 조성물
|
|
US7199056B2
(en)
*
|
2002-02-08 |
2007-04-03 |
Applied Materials, Inc. |
Low cost and low dishing slurry for polysilicon CMP
|
|
US6774042B1
(en)
*
|
2002-02-26 |
2004-08-10 |
Taiwan Semiconductor Manufacturing Company |
Planarization method for deep sub micron shallow trench isolation process
|
|
US6974777B2
(en)
*
|
2002-06-07 |
2005-12-13 |
Cabot Microelectronics Corporation |
CMP compositions for low-k dielectric materials
|
|
US6936543B2
(en)
*
|
2002-06-07 |
2005-08-30 |
Cabot Microelectronics Corporation |
CMP method utilizing amphiphilic nonionic surfactants
|
|
US7063597B2
(en)
|
2002-10-25 |
2006-06-20 |
Applied Materials |
Polishing processes for shallow trench isolation substrates
|
|
AU2003284672A1
(en)
*
|
2002-12-03 |
2004-06-23 |
Nikon Corporation |
Contaminant removing method and device, and exposure method and apparatus
|
|
JP2004228519A
(ja)
*
|
2003-01-27 |
2004-08-12 |
Elpida Memory Inc |
半導体装置、及びその製造方法
|
|
KR100532427B1
(ko)
*
|
2003-03-27 |
2005-11-30 |
삼성전자주식회사 |
강유전체 메모리 소자의 제조 방법
|
|
KR100539983B1
(ko)
*
|
2003-05-15 |
2006-01-10 |
학교법인 한양학원 |
Cmp용 세리아 연마제 및 그 제조 방법
|
|
US20050028450A1
(en)
*
|
2003-08-07 |
2005-02-10 |
Wen-Qing Xu |
CMP slurry
|
|
JP4913409B2
(ja)
*
|
2003-09-12 |
2012-04-11 |
日立化成工業株式会社 |
セリウム塩、その製造方法、酸化セリウム及びセリウム系研磨剤
|
|
US7129151B2
(en)
*
|
2003-11-04 |
2006-10-31 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Planarizing method employing hydrogenated silicon nitride planarizing stop layer
|
|
US20050108947A1
(en)
*
|
2003-11-26 |
2005-05-26 |
Mueller Brian L. |
Compositions and methods for chemical mechanical polishing silica and silicon nitride
|
|
US7470295B2
(en)
*
|
2004-03-12 |
2008-12-30 |
K.C. Tech Co., Ltd. |
Polishing slurry, method of producing same, and method of polishing substrate
|
|
TWI283008B
(en)
*
|
2004-05-11 |
2007-06-21 |
K C Tech Co Ltd |
Slurry for CMP and method of producing the same
|
|
KR100599329B1
(ko)
*
|
2004-05-11 |
2006-07-14 |
주식회사 케이씨텍 |
연마용 슬러리 및 기판 연마 방법
|
|
TWI273632B
(en)
*
|
2004-07-28 |
2007-02-11 |
K C Tech Co Ltd |
Polishing slurry, method of producing same, and method of polishing substrate
|
|
US20060021972A1
(en)
*
|
2004-07-28 |
2006-02-02 |
Lane Sarah J |
Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
|
|
US20060088976A1
(en)
*
|
2004-10-22 |
2006-04-27 |
Applied Materials, Inc. |
Methods and compositions for chemical mechanical polishing substrates
|
|
US7504044B2
(en)
|
2004-11-05 |
2009-03-17 |
Cabot Microelectronics Corporation |
Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
|
|
US7531105B2
(en)
*
|
2004-11-05 |
2009-05-12 |
Cabot Microelectronics Corporation |
Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
|
|
TWI323741B
(en)
*
|
2004-12-16 |
2010-04-21 |
K C Tech Co Ltd |
Abrasive particles, polishing slurry, and producing method thereof
|
|
US7208325B2
(en)
*
|
2005-01-18 |
2007-04-24 |
Applied Materials, Inc. |
Refreshing wafers having low-k dielectric materials
|
|
KR100641348B1
(ko)
*
|
2005-06-03 |
2006-11-03 |
주식회사 케이씨텍 |
Cmp용 슬러리와 이의 제조 방법 및 기판의 연마 방법
|
|
US20090075093A1
(en)
*
|
2007-08-14 |
2009-03-19 |
Scf Technologies A/S |
Method and compositions for producing optically clear photocatalytic coatings
|
|
US20090047870A1
(en)
*
|
2007-08-16 |
2009-02-19 |
Dupont Air Products Nanomaterials Llc |
Reverse Shallow Trench Isolation Process
|
|
TW201038690A
(en)
*
|
2008-09-26 |
2010-11-01 |
Rhodia Operations |
Abrasive compositions for chemical mechanical polishing and methods for using same
|
|
KR101659144B1
(ko)
|
2013-04-17 |
2016-09-23 |
제일모직주식회사 |
유기막 cmp 슬러리 조성물 및 이를 이용한 연마방법
|
|
WO2014171766A1
(ko)
*
|
2013-04-17 |
2014-10-23 |
제일모직 주식회사 |
유기막 cmp 슬러리 조성물 및 이를 이용한 연마방법
|
|
TWI767788B
(zh)
|
2016-06-24 |
2022-06-11 |
美商克若密斯股份有限公司 |
工程基板結構
|
|
JP2024505893A
(ja)
|
2021-01-26 |
2024-02-08 |
シーエムシー マテリアルズ リミティド ライアビリティ カンパニー |
ホウ素ドープポリシリコンを研磨するための組成物及び方法
|