TW267243B - - Google Patents
Info
- Publication number
- TW267243B TW267243B TW084105275A TW84105275A TW267243B TW 267243 B TW267243 B TW 267243B TW 084105275 A TW084105275 A TW 084105275A TW 84105275 A TW84105275 A TW 84105275A TW 267243 B TW267243 B TW 267243B
- Authority
- TW
- Taiwan
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
- H01J37/3023—Programme control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31761—Patterning strategy
- H01J2237/31764—Dividing into sub-patterns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31769—Proximity effect correction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31776—Shaped beam
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6110646A JP2647000B2 (ja) | 1994-05-25 | 1994-05-25 | 電子ビームの露光方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW267243B true TW267243B (zh) | 1996-01-01 |
Family
ID=14540973
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW084105275A TW267243B (zh) | 1994-05-25 | 1995-05-25 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5563419A (zh) |
JP (1) | JP2647000B2 (zh) |
KR (1) | KR0148647B1 (zh) |
TW (1) | TW267243B (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6730305B1 (en) * | 2000-05-08 | 2004-05-04 | The Uab Research Foundation | Nucleotide sequences encoding bovine respiratory syncytial virus immunogenic proteins |
JP3348586B2 (ja) * | 1995-12-28 | 2002-11-20 | ソニー株式会社 | 電子線リソグラフィ技術における近接効果補正法 |
JP2914264B2 (ja) * | 1996-01-16 | 1999-06-28 | 日本電気株式会社 | 電子ビーム描画方法 |
US5847959A (en) * | 1997-01-28 | 1998-12-08 | Etec Systems, Inc. | Method and apparatus for run-time correction of proximity effects in pattern generation |
JP2950280B2 (ja) * | 1997-03-31 | 1999-09-20 | 日本電気株式会社 | 電子線の描画方法 |
US6376847B1 (en) * | 1998-08-24 | 2002-04-23 | Matsushia Electric Industrial Co., Ltd. | Charged particle lithography method and system |
JP3686367B2 (ja) * | 2001-11-15 | 2005-08-24 | 株式会社ルネサステクノロジ | パターン形成方法および半導体装置の製造方法 |
KR100459697B1 (ko) * | 2001-12-27 | 2004-12-04 | 삼성전자주식회사 | 가변적인 후방 산란 계수를 이용하는 전자빔 노광 방법 및이를 기록한 컴퓨터로 읽을 수 있는 기록 매체 |
JP4773224B2 (ja) * | 2006-02-14 | 2011-09-14 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置、荷電粒子ビーム描画方法及びプログラム |
JP4976071B2 (ja) * | 2006-02-21 | 2012-07-18 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置 |
US7902528B2 (en) * | 2006-11-21 | 2011-03-08 | Cadence Design Systems, Inc. | Method and system for proximity effect and dose correction for a particle beam writing device |
US7824828B2 (en) * | 2007-02-22 | 2010-11-02 | Cadence Design Systems, Inc. | Method and system for improvement of dose correction for particle beam writers |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5493364A (en) * | 1977-12-30 | 1979-07-24 | Fujitsu Ltd | Exposure system for electron beam |
JPS57204125A (en) * | 1981-06-10 | 1982-12-14 | Hitachi Ltd | Electron-ray drawing device |
JPS59167018A (ja) * | 1983-03-11 | 1984-09-20 | Hitachi Ltd | 電子線描画方法 |
JP2680074B2 (ja) * | 1988-10-24 | 1997-11-19 | 富士通株式会社 | 荷電粒子ビーム露光を用いた半導体装置の製造方法 |
JP2658399B2 (ja) * | 1989-06-15 | 1997-09-30 | 松下電器産業株式会社 | 空気調和機 |
JP2512184B2 (ja) * | 1990-01-31 | 1996-07-03 | 株式会社日立製作所 | 荷電粒子線描画装置及び描画方法 |
JPH04137520A (ja) * | 1990-09-28 | 1992-05-12 | Hitachi Ltd | 電子線描画装置および描画方法 |
IL97021A0 (en) * | 1991-01-24 | 1992-03-29 | Ibm Israel | Partitioning method for e-beam lithography |
IL97022A0 (en) * | 1991-01-24 | 1992-03-29 | Ibm Israel | Partitioning method for e-beam lithography |
JP3218468B2 (ja) * | 1992-06-24 | 2001-10-15 | 株式会社ニコン | 電子線描画装置 |
-
1994
- 1994-05-25 JP JP6110646A patent/JP2647000B2/ja not_active Expired - Lifetime
-
1995
- 1995-05-25 US US08/451,076 patent/US5563419A/en not_active Expired - Lifetime
- 1995-05-25 KR KR1019950013223A patent/KR0148647B1/ko not_active IP Right Cessation
- 1995-05-25 TW TW084105275A patent/TW267243B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR950033698A (ko) | 1995-12-26 |
KR0148647B1 (ko) | 1998-11-02 |
JPH07321011A (ja) | 1995-12-08 |
JP2647000B2 (ja) | 1997-08-27 |
US5563419A (en) | 1996-10-08 |