TW266338B - - Google Patents
Info
- Publication number
- TW266338B TW266338B TW084105244A TW84105244A TW266338B TW 266338 B TW266338 B TW 266338B TW 084105244 A TW084105244 A TW 084105244A TW 84105244 A TW84105244 A TW 84105244A TW 266338 B TW266338 B TW 266338B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/18327—Structure being part of a DBR
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
- H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/261,502 US5432809A (en) | 1994-06-15 | 1994-06-15 | VCSEL with Al-free cavity region |
Publications (1)
Publication Number | Publication Date |
---|---|
TW266338B true TW266338B (zh) | 1995-12-21 |
Family
ID=22993595
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW084105244A TW266338B (zh) | 1994-06-15 | 1995-05-24 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5432809A (zh) |
JP (1) | JPH088485A (zh) |
KR (1) | KR100381985B1 (zh) |
TW (1) | TW266338B (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08181384A (ja) * | 1994-12-21 | 1996-07-12 | Nec Corp | 面発光レーザ及びその作製方法 |
US5633886A (en) * | 1995-08-28 | 1997-05-27 | Motorola | Short wavelength VCSEL with Al-free active region |
EP0784363B1 (en) * | 1995-12-26 | 2000-10-11 | Nippon Telegraph and Telephone Corporation | Vertical-cavity surface-emitting laser and method for manufacturing the same |
JPH09232692A (ja) * | 1996-02-16 | 1997-09-05 | Lucent Technol Inc | 半導体レーザ装置 |
US5832017A (en) * | 1996-03-15 | 1998-11-03 | Motorola Inc | Reliable near IR VCSEL |
US5838705A (en) * | 1996-11-04 | 1998-11-17 | Motorola, Inc. | Light emitting device having a defect inhibition layer |
US5943359A (en) * | 1997-04-23 | 1999-08-24 | Motorola, Inc. | Long wavelength VCSEL |
US5903586A (en) * | 1997-07-30 | 1999-05-11 | Motorola, Inc. | Long wavelength vertical cavity surface emitting laser |
US6327293B1 (en) * | 1998-08-12 | 2001-12-04 | Coherent, Inc. | Optically-pumped external-mirror vertical-cavity semiconductor-laser |
US6603784B1 (en) * | 1998-12-21 | 2003-08-05 | Honeywell International Inc. | Mechanical stabilization of lattice mismatched quantum wells |
US6429443B1 (en) | 2000-06-06 | 2002-08-06 | Applied Materials, Inc. | Multiple beam electron beam lithography system |
KR100345452B1 (ko) | 2000-12-14 | 2002-07-26 | 한국전자통신연구원 | 상부거울층 양단부에 확산영역을 구비하는 장파장표면방출 레이저 소자 및 그 제조 방법 |
CA2581614A1 (en) | 2004-10-01 | 2006-04-13 | Finisar Corporation | Vertical cavity surface emitting laser having multiple top-side contacts |
US7860137B2 (en) | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4991179A (en) * | 1989-04-26 | 1991-02-05 | At&T Bell Laboratories | Electrically pumped vertical cavity laser |
US5216686A (en) * | 1992-02-03 | 1993-06-01 | Motorola, Inc. | Integrated HBT and VCSEL structure and method of fabrication |
US5274655A (en) * | 1992-03-26 | 1993-12-28 | Motorola, Inc. | Temperature insensitive vertical cavity surface emitting laser |
US5317587A (en) * | 1992-08-06 | 1994-05-31 | Motorola, Inc. | VCSEL with separate control of current distribution and optical mode |
US5328854A (en) * | 1993-03-31 | 1994-07-12 | At&T Bell Laboratories | Fabrication of electronic devices with an internal window |
-
1994
- 1994-06-15 US US08/261,502 patent/US5432809A/en not_active Expired - Lifetime
-
1995
- 1995-05-24 TW TW084105244A patent/TW266338B/zh not_active IP Right Cessation
- 1995-06-12 JP JP7167886A patent/JPH088485A/ja active Pending
- 1995-06-15 KR KR1019950015822A patent/KR100381985B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR960002999A (ko) | 1996-01-26 |
JPH088485A (ja) | 1996-01-12 |
US5432809A (en) | 1995-07-11 |
KR100381985B1 (ko) | 2003-06-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK4A | Expiration of patent term of an invention patent |