TW263617B - - Google Patents

Info

Publication number
TW263617B
TW263617B TW084101682A TW84101682A TW263617B TW 263617 B TW263617 B TW 263617B TW 084101682 A TW084101682 A TW 084101682A TW 84101682 A TW84101682 A TW 84101682A TW 263617 B TW263617 B TW 263617B
Authority
TW
Taiwan
Application number
TW084101682A
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW263617B publication Critical patent/TW263617B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
TW084101682A 1994-03-22 1995-02-23 TW263617B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/216,578 US5446695A (en) 1994-03-22 1994-03-22 Memory device with programmable self-refreshing and testing methods therefore

Publications (1)

Publication Number Publication Date
TW263617B true TW263617B (zh) 1995-11-21

Family

ID=22807629

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084101682A TW263617B (zh) 1994-03-22 1995-02-23

Country Status (6)

Country Link
US (2) US5446695A (zh)
EP (1) EP0674320B1 (zh)
JP (1) JP3098393B2 (zh)
KR (1) KR0147497B1 (zh)
DE (1) DE69517079T2 (zh)
TW (1) TW263617B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI637177B (zh) * 2016-12-23 2018-10-01 台灣福雷電子股份有限公司 用於測試半導體元件之系統及方法

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7190617B1 (en) * 1989-04-13 2007-03-13 Sandisk Corporation Flash EEprom system
US5424672A (en) * 1994-02-24 1995-06-13 Micron Semiconductor, Inc. Low current redundancy fuse assembly
US5945840A (en) * 1994-02-24 1999-08-31 Micron Technology, Inc. Low current redundancy anti-fuse assembly
US5838620A (en) 1995-04-05 1998-11-17 Micron Technology, Inc. Circuit for cancelling and replacing redundant elements
US5812468A (en) * 1995-11-28 1998-09-22 Micron Technology, Inc. Programmable device for redundant element cancel in a memory
JPH09161478A (ja) * 1995-12-12 1997-06-20 Mitsubishi Electric Corp 半導体記憶装置
KR100197562B1 (ko) * 1995-12-23 1999-06-15 윤종용 셀프 리프레쉬 주기를 조정할 수 있는 반도체 메모리장치
TW338106B (en) * 1996-03-29 1998-08-11 Adoban Test Kk Semiconductor memory testing apparatus
US6392948B1 (en) * 1996-08-29 2002-05-21 Micron Technology, Inc. Semiconductor device with self refresh test mode
US5898186A (en) * 1996-09-13 1999-04-27 Micron Technology, Inc. Reduced terminal testing system
US5808952A (en) * 1996-10-28 1998-09-15 Silicon Magic Corporation Adaptive auto refresh
US5870411A (en) * 1996-12-13 1999-02-09 International Business Machines Corporation Method and system for testing self-timed circuitry
US5790560A (en) * 1996-12-13 1998-08-04 International Business Machines Corporation Apparatus and method for timing self-timed circuitry
US5912579A (en) * 1997-02-06 1999-06-15 Zagar; Paul S. Circuit for cancelling and replacing redundant elements
US5991851A (en) * 1997-05-02 1999-11-23 Enhanced Memory Systems, Inc. Enhanced signal processing random access memory device utilizing a DRAM memory array integrated with an associated SRAM cache and internal refresh control
US6055611A (en) * 1997-07-09 2000-04-25 Micron Technology, Inc. Method and apparatus for enabling redundant memory
US6212599B1 (en) * 1997-11-26 2001-04-03 Intel Corporation Method and apparatus for a memory control system including a secondary controller for DRAM refresh during sleep mode
US6118719A (en) * 1998-05-20 2000-09-12 International Business Machines Corporation Self-initiated self-refresh mode for memory modules
KR100308067B1 (ko) * 1998-06-29 2001-10-19 박종섭 로오 어드레스 스트로브 경로 제어방법
US6334167B1 (en) 1998-08-31 2001-12-25 International Business Machines Corporation System and method for memory self-timed refresh for reduced power consumption
US6317852B1 (en) * 1998-10-23 2001-11-13 Vanguard International Semiconductor Corporation Method to test auto-refresh and self refresh circuitry
KR100363105B1 (ko) 1998-12-23 2003-02-19 주식회사 하이닉스반도체 셀 리키지 커런트 보상용 셀프 리프레쉬 장치
US6377500B1 (en) * 1999-11-11 2002-04-23 Kabushiki Kaisha Toshiba Memory system with a non-volatile memory, having address translating function
DE10004958A1 (de) * 2000-02-04 2001-08-09 Infineon Technologies Ag Verfahren zum Testen der Refresheinrichtung eines Informationsspeichers
JP2001243766A (ja) * 2000-02-29 2001-09-07 Fujitsu Ltd 半導体記憶装置
US6433405B1 (en) * 2000-03-02 2002-08-13 Hewlett-Packard Company Integrated circuit having provisions for remote storage of chip specific operating parameters
US6633987B2 (en) * 2000-03-24 2003-10-14 Intel Corporation Method and apparatus to implement the ACPI(advanced configuration and power interface) C3 state in a RDRAM based system
KR100515072B1 (ko) * 2000-06-30 2005-09-16 주식회사 하이닉스반도체 리프레시 동작에서의 전력소모를 줄이기 위한반도체메모리장치
US6529416B2 (en) * 2000-11-30 2003-03-04 Bitmicro Networks, Inc. Parallel erase operations in memory systems
US6330203B1 (en) 2000-12-26 2001-12-11 Vanguard International Semiconductor Corporation Test mode for verification of on-chip generated row addresses
KR100421904B1 (ko) * 2001-03-21 2004-03-10 주식회사 하이닉스반도체 반도체 소자의 리프래쉬 회로
DE10125022A1 (de) * 2001-05-22 2002-12-12 Infineon Technologies Ag Dynamischer Speicher und Verfahren zum Testen eines dynamischen Speichers
JP2003132677A (ja) * 2001-10-29 2003-05-09 Mitsubishi Electric Corp 半導体記憶装置
KR100468718B1 (ko) * 2001-12-07 2005-01-29 삼성전자주식회사 외부 리프레쉬 명령을 사용하지 않는 메모리장치의리프레쉬 제어회로 및 그 방법
US6728156B2 (en) * 2002-03-11 2004-04-27 International Business Machines Corporation Memory array system
US6891404B2 (en) * 2002-06-11 2005-05-10 Infineon Technologies Auto-adjustment of self-refresh frequency
US7026646B2 (en) * 2002-06-20 2006-04-11 Micron Technology, Inc. Isolation circuit
US6967348B2 (en) * 2002-06-20 2005-11-22 Micron Technology, Inc. Signal sharing circuit with microelectric die isolation features
KR100849063B1 (ko) * 2002-06-28 2008-07-30 주식회사 하이닉스반도체 자동 리프레쉬 로우 사이클 시간에 뱅크 액티브 신호를최적화하는 회로 및 방법
US6778457B1 (en) * 2003-02-19 2004-08-17 Freescale Semiconductor, Inc. Variable refresh control for a memory
KR100529033B1 (ko) * 2003-05-23 2005-11-17 주식회사 하이닉스반도체 동기식 반도체 메모리 소자
US7042776B2 (en) * 2004-02-18 2006-05-09 International Business Machines Corporation Method and circuit for dynamic read margin control of a memory array
US7099221B2 (en) * 2004-05-06 2006-08-29 Micron Technology, Inc. Memory controller method and system compensating for memory cell data losses
US20060010339A1 (en) 2004-06-24 2006-01-12 Klein Dean A Memory system and method having selective ECC during low power refresh
US7340668B2 (en) * 2004-06-25 2008-03-04 Micron Technology, Inc. Low power cost-effective ECC memory system and method
US7116602B2 (en) 2004-07-15 2006-10-03 Micron Technology, Inc. Method and system for controlling refresh to avoid memory cell data losses
US6965537B1 (en) * 2004-08-31 2005-11-15 Micron Technology, Inc. Memory system and method using ECC to achieve low power refresh
FR2881869A1 (fr) * 2005-02-04 2006-08-11 St Microelectronics Sa Memoire dynamique pour terminal cellulaire
US7532532B2 (en) * 2005-05-31 2009-05-12 Micron Technology, Inc. System and method for hidden-refresh rate modification
US7221609B1 (en) * 2005-12-28 2007-05-22 Intel Corporation Fine granularity DRAM refresh
US7333382B2 (en) * 2006-02-16 2008-02-19 Infineon Technologies Ag Method and apparatus for an oscillator within a memory device
US7607031B2 (en) * 2006-03-28 2009-10-20 Advanced Micro Devices, Inc. Power management in a communication link
US7617404B2 (en) * 2006-03-28 2009-11-10 Advanced Micro Devices, Inc. In-band power management in a communication link
US7447096B2 (en) * 2006-05-05 2008-11-04 Honeywell International Inc. Method for refreshing a non-volatile memory
KR100802074B1 (ko) * 2006-09-08 2008-02-12 주식회사 하이닉스반도체 리프레쉬명령 생성회로를 포함하는 메모리장치 및리프레쉬명령 생성방법.
US20080080284A1 (en) * 2006-09-15 2008-04-03 Peter Mayer Method and apparatus for refreshing memory cells of a memory
US7894289B2 (en) 2006-10-11 2011-02-22 Micron Technology, Inc. Memory system and method using partial ECC to achieve low power refresh and fast access to data
US7900120B2 (en) 2006-10-18 2011-03-01 Micron Technology, Inc. Memory system and method using ECC with flag bit to identify modified data
KR100858881B1 (ko) 2007-03-02 2008-09-17 주식회사 하이닉스반도체 파일드 리프레쉬와 부분 리프레쉬 동작을 수행하는 반도체메모리장치.
US7975170B2 (en) * 2007-06-15 2011-07-05 Qimonda Ag Memory refresh system and method
KR101796116B1 (ko) 2010-10-20 2017-11-10 삼성전자 주식회사 반도체 장치, 이를 포함하는 메모리 모듈, 메모리 시스템 및 그 동작방법
US8799566B2 (en) * 2010-12-09 2014-08-05 International Business Machines Corporation Memory system with a programmable refresh cycle
US8898544B2 (en) 2012-12-11 2014-11-25 International Business Machines Corporation DRAM error detection, evaluation, and correction
US8887014B2 (en) 2012-12-11 2014-11-11 International Business Machines Corporation Managing errors in a DRAM by weak cell encoding
US10331526B2 (en) * 2015-07-31 2019-06-25 Qualcomm Incorporated Systems, methods, and apparatus for frequency reset of a memory
US10504578B2 (en) 2015-10-25 2019-12-10 Hewlett Packard Enterprise Development Lp Volatile memory device with automatic lower power state
KR102607397B1 (ko) 2016-12-06 2023-11-28 삼성디스플레이 주식회사 표시 장치의 전원 제어 회로

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4207618A (en) * 1978-06-26 1980-06-10 Texas Instruments Incorporated On-chip refresh for dynamic memory
JPS55135780A (en) * 1979-04-10 1980-10-22 Citizen Watch Co Ltd Electronic watch
US4347589A (en) * 1979-05-15 1982-08-31 Mostek Corporation Refresh counter test
US4494222A (en) * 1980-03-28 1985-01-15 Texas Instruments Incorporated Processor system using on-chip refresh address generator for dynamic memory
JPS6061992A (ja) * 1983-09-14 1985-04-09 Nec Corp 擬似スタティックメモリ
JPH0787034B2 (ja) * 1984-05-07 1995-09-20 株式会社日立製作所 半導体集積回路装置
US4843265A (en) * 1986-02-10 1989-06-27 Dallas Semiconductor Corporation Temperature compensated monolithic delay circuit
JPS6432489A (en) * 1987-07-27 1989-02-02 Matsushita Electronics Corp Memory device
JPH01124195A (ja) * 1987-11-09 1989-05-17 Sharp Corp セルフリフレッシュ方式
US4883976A (en) * 1987-12-02 1989-11-28 Xicor, Inc. Low power dual-mode CMOS bias voltage generator
JP2617779B2 (ja) * 1988-08-31 1997-06-04 三菱電機株式会社 半導体メモリ装置
JP3225531B2 (ja) * 1990-05-15 2001-11-05 セイコーエプソン株式会社 メモリカード
DE69128061T2 (de) * 1990-08-30 1998-03-26 Nec Corp Halbleiterspeicheranordnung
US5335201A (en) * 1991-04-15 1994-08-02 Micron Technology, Inc. Method for providing synchronous refresh cycles in self-refreshing interruptable DRAMs
EP0541060A3 (en) * 1991-11-05 1994-05-18 Fujitsu Ltd Dynamic random access memory having an improved operational stability
GB2265035B (en) * 1992-03-12 1995-11-22 Apple Computer Method and apparatus for improved dram refresh operations
US5402384A (en) * 1992-04-24 1995-03-28 Citizen Watch Co., Ltd. Dynamic ram
JP3288473B2 (ja) * 1992-04-24 2002-06-04 シチズン時計株式会社 ダイナミックｒａｍ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI637177B (zh) * 2016-12-23 2018-10-01 台灣福雷電子股份有限公司 用於測試半導體元件之系統及方法

Also Published As

Publication number Publication date
JPH07282577A (ja) 1995-10-27
KR0147497B1 (ko) 1998-11-02
DE69517079D1 (de) 2000-06-29
KR950027831A (ko) 1995-10-18
US5446695A (en) 1995-08-29
EP0674320A1 (en) 1995-09-27
DE69517079T2 (de) 2001-02-01
US5703823A (en) 1997-12-30
JP3098393B2 (ja) 2000-10-16
EP0674320B1 (en) 2000-05-24

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