TW253997B - - Google Patents

Info

Publication number
TW253997B
TW253997B TW082107356A TW82107356A TW253997B TW 253997 B TW253997 B TW 253997B TW 082107356 A TW082107356 A TW 082107356A TW 82107356 A TW82107356 A TW 82107356A TW 253997 B TW253997 B TW 253997B
Authority
TW
Taiwan
Application number
TW082107356A
Other languages
Chinese (zh)
Original Assignee
Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics Nv filed Critical Philips Electronics Nv
Application granted granted Critical
Publication of TW253997B publication Critical patent/TW253997B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H10W72/075—
    • H10W72/50—
    • H10W99/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H10W72/07532—
    • H10W72/07533—
    • H10W72/536—
    • H10W72/5363—
    • H10W72/5522—
    • H10W72/59—
    • H10W90/753—
    • H10W90/754—

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Semiconductor Lasers (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Light Receiving Elements (AREA)
TW082107356A 1992-09-25 1993-09-08 TW253997B (oth)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP92202949 1992-09-25

Publications (1)

Publication Number Publication Date
TW253997B true TW253997B (oth) 1995-08-11

Family

ID=8210940

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082107356A TW253997B (oth) 1992-09-25 1993-09-08

Country Status (5)

Country Link
EP (1) EP0589524B1 (oth)
JP (1) JPH06237048A (oth)
KR (1) KR940008144A (oth)
DE (1) DE69311996T2 (oth)
TW (1) TW253997B (oth)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6454026A (en) * 1987-08-24 1989-03-01 Dai Ichi Kogyo Seiyaku Co Ltd Production of modified polyester
KR100389955B1 (ko) * 1996-05-15 2003-09-19 주식회사 하이닉스반도체 이동 통신 교환기의 상. 하위 프로세서간 버스 통신장치및방법
US6888167B2 (en) 2001-07-23 2005-05-03 Cree, Inc. Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding
US6747298B2 (en) 2001-07-23 2004-06-08 Cree, Inc. Collets for bonding of light emitting diodes having shaped substrates

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57159078A (en) * 1981-03-25 1982-10-01 Toshiba Corp Manufacture of semiconductor light-emitting device
JPS58201388A (ja) * 1982-05-20 1983-11-24 Matsushita Electric Ind Co Ltd 半導体装置
JPS58201389A (ja) * 1982-05-20 1983-11-24 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH0286184A (ja) * 1988-09-22 1990-03-27 Hitachi Ltd 光電子装置
JPH03286547A (ja) * 1990-04-02 1991-12-17 Mitsubishi Electric Corp 半導体レーザ装置の製造方法

Also Published As

Publication number Publication date
EP0589524B1 (en) 1997-07-09
EP0589524A3 (en) 1994-04-20
KR940008144A (ko) 1994-04-29
EP0589524A2 (en) 1994-03-30
JPH06237048A (ja) 1994-08-23
DE69311996T2 (de) 1998-01-22
DE69311996D1 (de) 1997-08-14

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