TW249295B - - Google Patents
Info
- Publication number
- TW249295B TW249295B TW083110307A TW83110307A TW249295B TW 249295 B TW249295 B TW 249295B TW 083110307 A TW083110307 A TW 083110307A TW 83110307 A TW83110307 A TW 83110307A TW 249295 B TW249295 B TW 249295B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H10P50/00—
-
- H10W20/083—
-
- H10P50/283—
-
- H10W20/089—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/159,634 US5468340A (en) | 1992-10-09 | 1993-11-30 | Highly selective high aspect ratio oxide etch method and products made by the process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW249295B true TW249295B (enExample) | 1995-06-11 |
Family
ID=22573345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW083110307A TW249295B (enExample) | 1993-11-30 | 1994-11-08 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5468340A (enExample) |
| EP (1) | EP0655775A1 (enExample) |
| JP (1) | JP3464061B2 (enExample) |
| KR (1) | KR100323242B1 (enExample) |
| TW (1) | TW249295B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5468339A (en) * | 1992-10-09 | 1995-11-21 | Advanced Micro Devices, Inc. | Plasma etch process |
| US5935877A (en) * | 1995-09-01 | 1999-08-10 | Applied Materials, Inc. | Etch process for forming contacts over titanium silicide |
| US6001699A (en) * | 1996-01-23 | 1999-12-14 | Intel Corporation | Highly selective etch process for submicron contacts |
| DE19707886C2 (de) * | 1997-02-27 | 2003-12-18 | Micronas Semiconductor Holding | Verfahren zum Erzeugen von Kontaktlöchern in einer Halbleiteranordnung |
| KR19980084172A (ko) * | 1997-05-21 | 1998-12-05 | 윤종용 | 고 식각선택비를 이용한 반도체장치의 건식식각방법 |
| TW430900B (en) * | 1997-09-08 | 2001-04-21 | Siemens Ag | Method for producing structures having a high aspect ratio |
| US6066566A (en) * | 1998-01-28 | 2000-05-23 | International Business Machines Corporation | High selectivity collar oxide etch processes |
| US6057193A (en) * | 1998-04-16 | 2000-05-02 | Advanced Micro Devices, Inc. | Elimination of poly cap for easy poly1 contact for NAND product |
| US6080676A (en) * | 1998-09-17 | 2000-06-27 | Advanced Micro Devices, Inc. | Device and method for etching spacers formed upon an integrated circuit gate conductor |
| US6281132B1 (en) | 1998-10-06 | 2001-08-28 | Advanced Micro Devices, Inc. | Device and method for etching nitride spacers formed upon an integrated circuit gate conductor |
| US6221745B1 (en) * | 1998-11-27 | 2001-04-24 | Taiwan Semiconductor Manufacturing Company | High selectivity mask oxide etching to suppress silicon pits |
| US6214742B1 (en) * | 1998-12-07 | 2001-04-10 | Advanced Micro Devices, Inc. | Post-via tin removal for via resistance improvement |
| EP1132959A1 (en) | 2000-03-03 | 2001-09-12 | STMicroelectronics S.r.l. | A method of forming low-resistivity connections in non-volatile memories |
| JP3539946B2 (ja) * | 2002-03-28 | 2004-07-07 | 沖電気工業株式会社 | Ｓｏｉ構造を有する半導体装置の製造方法 |
| US8246786B2 (en) * | 2009-09-03 | 2012-08-21 | Pratt & Whitney Rocketdyne, Inc. | Solar desalinization plant |
| US8246787B2 (en) * | 2009-09-03 | 2012-08-21 | Pratt & Whitney Rockedyne, Inc. | Solar desalinization plant |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4795722A (en) * | 1987-02-05 | 1989-01-03 | Texas Instruments Incorporated | Method for planarization of a semiconductor device prior to metallization |
| GB2214709A (en) * | 1988-01-20 | 1989-09-06 | Philips Nv | A method of enabling connection to a substructure forming part of an electronic device |
| US4871421A (en) | 1988-09-15 | 1989-10-03 | Lam Research Corporation | Split-phase driver for plasma etch system |
| US5254213A (en) * | 1989-10-25 | 1993-10-19 | Matsushita Electric Industrial Co., Ltd. | Method of forming contact windows |
| US5026666A (en) * | 1989-12-28 | 1991-06-25 | At&T Bell Laboratories | Method of making integrated circuits having a planarized dielectric |
| US4978420A (en) * | 1990-01-03 | 1990-12-18 | Hewlett-Packard Company | Single chamber via etch through a dual-layer dielectric |
| US5021121A (en) * | 1990-02-16 | 1991-06-04 | Applied Materials, Inc. | Process for RIE etching silicon dioxide |
| US5213659A (en) * | 1990-06-20 | 1993-05-25 | Micron Technology, Inc. | Combination usage of noble gases for dry etching semiconductor wafers |
| US5022958A (en) * | 1990-06-27 | 1991-06-11 | At&T Bell Laboratories | Method of etching for integrated circuits with planarized dielectric |
| JP2697952B2 (ja) * | 1990-11-15 | 1998-01-19 | シャープ株式会社 | 半導体装置の製造方法 |
| US5176790A (en) * | 1991-09-25 | 1993-01-05 | Applied Materials, Inc. | Process for forming a via in an integrated circuit structure by etching through an insulation layer while inhibiting sputtering of underlying metal |
| US5269879A (en) * | 1991-10-16 | 1993-12-14 | Lam Research Corporation | Method of etching vias without sputtering of underlying electrically conductive layer |
| US5284549A (en) * | 1992-01-02 | 1994-02-08 | International Business Machines Corporation | Selective fluorocarbon-based RIE process utilizing a nitrogen additive |
| US5468339A (en) * | 1992-10-09 | 1995-11-21 | Advanced Micro Devices, Inc. | Plasma etch process |
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1993
- 1993-11-30 US US08/159,634 patent/US5468340A/en not_active Expired - Fee Related
-
1994
- 1994-10-25 EP EP94307809A patent/EP0655775A1/en not_active Withdrawn
- 1994-11-08 TW TW083110307A patent/TW249295B/zh not_active IP Right Cessation
- 1994-11-17 KR KR1019940030287A patent/KR100323242B1/ko not_active Expired - Lifetime
- 1994-11-29 JP JP29419994A patent/JP3464061B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07193057A (ja) | 1995-07-28 |
| JP3464061B2 (ja) | 2003-11-05 |
| KR100323242B1 (ko) | 2002-05-13 |
| EP0655775A1 (en) | 1995-05-31 |
| US5468340A (en) | 1995-11-21 |
| KR950015622A (ko) | 1995-06-17 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |