TW241380B - Fabrication method for tungsten plug metallization of IC - Google Patents

Fabrication method for tungsten plug metallization of IC

Info

Publication number
TW241380B
TW241380B TW83103910A TW83103910A TW241380B TW 241380 B TW241380 B TW 241380B TW 83103910 A TW83103910 A TW 83103910A TW 83103910 A TW83103910 A TW 83103910A TW 241380 B TW241380 B TW 241380B
Authority
TW
Taiwan
Prior art keywords
tungsten plug
layer
forming
substrate
contact window
Prior art date
Application number
TW83103910A
Other languages
Chinese (zh)
Inventor
Huoo-Tiee Lu
Cherng-Hann Hwang
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW83103910A priority Critical patent/TW241380B/en
Application granted granted Critical
Publication of TW241380B publication Critical patent/TW241380B/en

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A fabrication method for tungsten plug metallization of IC includes the following steps: 1. supplying one substrate; 2. forming semiconducter component structrue on the substrate; 3. forming one isolating layer overlaying on the semiconductor component structure, and opening contact window from isolating layer to the substrate; 4. depositing one glue layer evenly on the isolating layer and in the contact window; 5. forming one tungsten plug in the contact window; 6. removing partial glue layer to leave the lower half part of glue layer located below the tungsten plug, and forming ditch on the upper half part of tungsten plug with removed glue layer; 7. forming one dielectric layer to fill the ditch; 8. forming one metal layer on the isolating layer and tungsten plug; 9. etching the metal layer for defining pattern to complete the metallization process.
TW83103910A 1994-04-30 1994-04-30 Fabrication method for tungsten plug metallization of IC TW241380B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW83103910A TW241380B (en) 1994-04-30 1994-04-30 Fabrication method for tungsten plug metallization of IC

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW83103910A TW241380B (en) 1994-04-30 1994-04-30 Fabrication method for tungsten plug metallization of IC

Publications (1)

Publication Number Publication Date
TW241380B true TW241380B (en) 1995-02-21

Family

ID=51400920

Family Applications (1)

Application Number Title Priority Date Filing Date
TW83103910A TW241380B (en) 1994-04-30 1994-04-30 Fabrication method for tungsten plug metallization of IC

Country Status (1)

Country Link
TW (1) TW241380B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8196747B2 (en) 2005-12-06 2012-06-12 International Business Machines Corporation End cap packaging material, packaging and method for protecting products against damage

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8196747B2 (en) 2005-12-06 2012-06-12 International Business Machines Corporation End cap packaging material, packaging and method for protecting products against damage

Similar Documents

Publication Publication Date Title
IL169135A0 (en) A method for depositing a metal layer on a semiconductor interconnect structure having a capping layer
WO2001078135A3 (en) Methods for repairing defects on a semiconductor substrate
TW272310B (en) Process for producing multi-level metallization in an integrated circuit
TW352454B (en) Improved method for forming aluminum contacts
US3868723A (en) Integrated circuit structure accommodating via holes
KR970007831B1 (en) Simultaneously forming method of metal wire and contact plug
EP0406025A3 (en) Method for fabricating a semiconductor device in which an insulating layer thereof has a uniform thickness
TW241380B (en) Fabrication method for tungsten plug metallization of IC
KR970009613B1 (en) Multi-level metalizing method of semiconductor device
KR100340112B1 (en) Method for manufacturing semiconductor device
KR970007837B1 (en) Metalizing method of semiconductor device
TW269053B (en) Process for disposable metal anti-reflection layer
TW238416B (en) Process for integrated circuit
TW377503B (en) Structure of multilevel interconnects in semiconductor components and the method of manufacturing the same
TW358227B (en) Half-embedded metal manufacturing for improvement of planarization of Ics
TW347580B (en) Process for forming a gate
KR960004075B1 (en) Method of forming metal plug
TW344102B (en) Additive metallization process and structure
TW351853B (en) Method and apparatus for making semiconductor device
TW327253B (en) The manufacturing method of metallization for IC
TW337609B (en) Process for producing tungsten plug capable of preventing disappearance of alignment mark and formation of tungsten plug recess
TW430974B (en) Manufacturing method for dual damascene structure of semiconductor chip
TW290716B (en) Method of making capacitor by etching technique
TW255048B (en) Planarization method between metal layers
TW334624B (en) The process and structure for metal interconnection of IC