TW239164B - - Google Patents

Info

Publication number
TW239164B
TW239164B TW082106439A TW82106439A TW239164B TW 239164 B TW239164 B TW 239164B TW 082106439 A TW082106439 A TW 082106439A TW 82106439 A TW82106439 A TW 82106439A TW 239164 B TW239164 B TW 239164B
Authority
TW
Taiwan
Application number
TW082106439A
Original Assignee
Tokyo Electron Co Ltd
Tokyo Electron Tohoku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP23633892A external-priority patent/JPH0669146A/ja
Application filed by Tokyo Electron Co Ltd, Tokyo Electron Tohoku Kk filed Critical Tokyo Electron Co Ltd
Application granted granted Critical
Publication of TW239164B publication Critical patent/TW239164B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
TW082106439A 1992-08-12 1993-08-11 TW239164B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP23634692 1992-08-12
JP23633892A JPH0669146A (ja) 1992-08-13 1992-08-13 縦型炉の炉口カバー装置

Publications (1)

Publication Number Publication Date
TW239164B true TW239164B (zh) 1995-01-21

Family

ID=26532629

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082106439A TW239164B (zh) 1992-08-12 1993-08-11

Country Status (3)

Country Link
US (1) US5458685A (zh)
KR (1) KR100289136B1 (zh)
TW (1) TW239164B (zh)

Families Citing this family (29)

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US5578132A (en) * 1993-07-07 1996-11-26 Tokyo Electron Kabushiki Kaisha Apparatus for heat treating semiconductors at normal pressure and low pressure
JP3971810B2 (ja) * 1995-11-30 2007-09-05 三星電子株式会社 縦型拡散炉
US5902103A (en) * 1995-12-29 1999-05-11 Kokusai Electric Co., Ltd. Vertical furnace of a semiconductor manufacturing apparatus and a boat cover thereof
USD424024S (en) * 1997-01-31 2000-05-02 Tokyo Electron Limited Quartz process tube
USD423463S (en) * 1997-01-31 2000-04-25 Tokyo Electron Limited Quartz process tube
US5948300A (en) * 1997-09-12 1999-09-07 Kokusai Bti Corporation Process tube with in-situ gas preheating
US5800616A (en) * 1997-12-15 1998-09-01 Sony Corporation Vertical LPCVD furnace with reversible manifold collar and method of retrofitting same
US6291868B1 (en) 1998-02-26 2001-09-18 Micron Technology, Inc. Forming a conductive structure in a semiconductor device
KR100363158B1 (ko) * 1998-10-09 2003-01-24 삼성전자 주식회사 폐쇄형반도체습식열산화장치
US6630053B2 (en) * 2000-08-22 2003-10-07 Asm Japan K.K. Semiconductor processing module and apparatus
US6902546B2 (en) * 2001-03-15 2005-06-07 Specialized Health Products, Inc. Safety shield for medical needles
JP2002334868A (ja) * 2001-05-10 2002-11-22 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US6761770B2 (en) * 2001-08-24 2004-07-13 Aviza Technology Inc. Atmospheric pressure wafer processing reactor having an internal pressure control system and method
JP3965167B2 (ja) * 2003-07-04 2007-08-29 東京エレクトロン株式会社 熱処理方法及び熱処理装置
WO2006030857A1 (ja) * 2004-09-16 2006-03-23 Hitachi Kokusai Electric Inc. 熱処理装置及び基板の製造方法
US7467916B2 (en) * 2005-03-08 2008-12-23 Asm Japan K.K. Semiconductor-manufacturing apparatus equipped with cooling stage and semiconductor-manufacturing method using same
KR100782484B1 (ko) * 2006-07-13 2007-12-05 삼성전자주식회사 열처리 설비
US7632354B2 (en) * 2006-08-08 2009-12-15 Tokyo Electron Limited Thermal processing system with improved process gas flow and method for injecting a process gas into a thermal processing system
JP5051875B2 (ja) * 2006-12-25 2012-10-17 東京エレクトロン株式会社 成膜装置および成膜方法
US20090035463A1 (en) * 2007-08-03 2009-02-05 Tokyo Electron Limited Thermal processing system and method for forming an oxide layer on substrates
KR101022060B1 (ko) * 2008-09-30 2011-03-16 주식회사 테라세미콘 퍼니스
KR20110112074A (ko) * 2010-04-06 2011-10-12 삼성전자주식회사 기판 처리 장치 및 방법
JP5645718B2 (ja) * 2011-03-07 2014-12-24 東京エレクトロン株式会社 熱処理装置
KR102265704B1 (ko) * 2011-04-07 2021-06-16 피코순 오와이 플라즈마 소오스를 갖는 퇴적 반응기
KR101879175B1 (ko) * 2011-10-20 2018-08-20 삼성전자주식회사 화학 기상 증착 장치
CN108364877B (zh) * 2017-12-29 2020-05-29 通富微电子股份有限公司 回流炉及回流时防止基板变形的方法
JP7216537B2 (ja) * 2018-12-13 2023-02-01 オリンパス株式会社 加熱炉
CN111755359B (zh) * 2019-03-26 2024-04-12 株式会社国际电气 基板处理装置、反应管以及半导体装置的制造方法
FI130545B (en) * 2021-09-14 2023-11-08 Picosun Oy SUBSTRATE PROCESSING EQUIPMENT AND METHOD

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55167041A (en) * 1979-06-14 1980-12-26 Toshiba Corp Vertical type gaseous phase growth device
JPH0758696B2 (ja) * 1984-11-09 1995-06-21 株式会社日立製作所 半導体ウエハ加熱装置
US4798165A (en) * 1985-10-07 1989-01-17 Epsilon Apparatus for chemical vapor deposition using an axially symmetric gas flow
US4891335A (en) * 1986-10-15 1990-01-02 Advantage Production Technology Inc. Semiconductor substrate heater and reactor process and apparatus
JPS63227011A (ja) * 1987-03-17 1988-09-21 Fujitsu Ltd 化学気相成長装置
JP2502661B2 (ja) * 1988-03-04 1996-05-29 松下電器産業株式会社 気相成長装置
JP2654996B2 (ja) * 1988-08-17 1997-09-17 東京エレクトロン株式会社 縦型熱処理装置
KR0147044B1 (ko) * 1990-01-23 1998-11-02 카자마 젠쥬 배기 시스템을 가지는 열처리장치
US5279670A (en) * 1990-03-31 1994-01-18 Tokyo Electron Sagami Limited Vertical type diffusion apparatus
US5268034A (en) * 1991-06-25 1993-12-07 Lsi Logic Corporation Fluid dispersion head for CVD appratus
US5303671A (en) * 1992-02-07 1994-04-19 Tokyo Electron Limited System for continuously washing and film-forming a semiconductor wafer

Also Published As

Publication number Publication date
KR940004717A (ko) 1994-03-15
US5458685A (en) 1995-10-17
KR100289136B1 (ko) 2001-05-02

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