TW231364B - Process for epitaxial common source or common drain semiconductor component - Google Patents

Abstract

A process for epitaxial common source or common drain semiconductorcomponent includes: 1. forming field oxide on silicon substrate; 2. forming gate oxide and polysilicon separately on the top of siliconsubstrate diffusion area; 2. implanting P ion with lower density on the silicon substrate diffusionarea of polysilicon's periphery; 3. forming spacer on polysilicon's periphery; 4. removing the spacer of polysilicon's one side by etching; 5. removing the spacer area and polysilicon's surface on silicon substrate,then by selectively epitaxial grown way to connect the epitaxial layer ofsilicon substrate and polysilicon; 6. implanting Sb ion with high density on epitaxial layer for transformingto source and drain; By the above process a buried window connection structure is formedautomatically between the silicon substrate and polysilicon, which formscommon gate or common drain, and raising the height of drain and source tosolve the short channel problem.