TW227071B - Fabrication method to form channel stop region by doping field region - Google Patents
Fabrication method to form channel stop region by doping field regionInfo
- Publication number
- TW227071B TW227071B TW83103664A TW83103664A TW227071B TW 227071 B TW227071 B TW 227071B TW 83103664 A TW83103664 A TW 83103664A TW 83103664 A TW83103664 A TW 83103664A TW 227071 B TW227071 B TW 227071B
- Authority
- TW
- Taiwan
- Prior art keywords
- doping
- region
- field region
- resistor
- photo
- Prior art date
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
A fabrication method to form channel stop region by doping field region for fabricating CMOS transistors with semiconductor material which forms field region oxidations, which comprises the following steps: - forming the CMOS gate on a position of the semiconductor material between he field region oxidations; - covering photo-resistor and proceeding developing to the photo-resistor y the mask for doping the CMOS drain and source to form a doping open on he photo-resistor; and - doping first-type impurity to form the CMOS drain region and source region; and the characteristics of the method being that: before doping first-type impurity, a shield object on the gate is formed and taked with the photo-resistor as the doping mask to dope second-type impurity via the doping open in a slope angle for proceeding field region doping and forming channel stop region under the field region oxidation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW83103664A TW227071B (en) | 1994-04-25 | 1994-04-25 | Fabrication method to form channel stop region by doping field region |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW83103664A TW227071B (en) | 1994-04-25 | 1994-04-25 | Fabrication method to form channel stop region by doping field region |
Publications (1)
Publication Number | Publication Date |
---|---|
TW227071B true TW227071B (en) | 1994-07-21 |
Family
ID=51348418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW83103664A TW227071B (en) | 1994-04-25 | 1994-04-25 | Fabrication method to form channel stop region by doping field region |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW227071B (en) |
-
1994
- 1994-04-25 TW TW83103664A patent/TW227071B/en active
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5793088A (en) | Structure for controlling threshold voltage of MOSFET | |
KR960014718B1 (en) | Method of manufacturing transistor | |
US5307312A (en) | Process for obtaining an N-channel single polysilicon level EPROM cell and cell obtained with said process | |
EP0747967A3 (en) | Vertical trench gate MOS device and a method of fabricating the same | |
WO2003058711A1 (en) | Asymmetric semiconductor device having dual work function gate and method of fabrication | |
EP1406295A3 (en) | A method of forming a CMOS device | |
TW228553B (en) | ||
US6218229B1 (en) | Method of fabricating semiconductor device having a dual-gate | |
TW228534B (en) | ||
TW342532B (en) | Process for producing dual-gate CMOS component by compensating implantation | |
TW227071B (en) | Fabrication method to form channel stop region by doping field region | |
TW362289B (en) | Manufacturing method of metal oxide semiconductor field effect transistor | |
JPS5578574A (en) | Manufacture of insulated-gate field-effect transistor | |
KR940010321A (en) | Manufacturing Method of NMOS LDD PMOS Halo Integrated Circuit for Complementary Metal Oxide Semiconductor (CMOS) Transistor | |
TW271499B (en) | Fabricating process for high-voltage CMOS transistor | |
KR940001287B1 (en) | Method of making pmos ldd structure | |
TW257884B (en) | Process of CMOS transistor | |
EP0139663A1 (en) | Self-aligned ldmos and method | |
TW241383B (en) | Fabrication method for CMOS transistor with metal gate | |
TW288176B (en) | Process of fabrication CMOS transistor with metal gate | |
KR930008877B1 (en) | Manuacturing method of cmos device | |
JPS55124268A (en) | Junction type field effect transistor and method of fabricating the same | |
CN1773684A (en) | Method for producing semiconductor transistor element | |
TW278221B (en) | Fabrication method of self-aligned CMOS transistor | |
KR100239784B1 (en) | Method of fabricating a semiconductor device |