TW227071B - Fabrication method to form channel stop region by doping field region - Google Patents

Fabrication method to form channel stop region by doping field region

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Publication number
TW227071B
TW227071B TW83103664A TW83103664A TW227071B TW 227071 B TW227071 B TW 227071B TW 83103664 A TW83103664 A TW 83103664A TW 83103664 A TW83103664 A TW 83103664A TW 227071 B TW227071 B TW 227071B
Authority
TW
Taiwan
Prior art keywords
doping
region
field region
resistor
photo
Prior art date
Application number
TW83103664A
Other languages
Chinese (zh)
Inventor
Jyh-Horng Lin
Tzong-Shi Ke
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW83103664A priority Critical patent/TW227071B/en
Application granted granted Critical
Publication of TW227071B publication Critical patent/TW227071B/en

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

A fabrication method to form channel stop region by doping field region for fabricating CMOS transistors with semiconductor material which forms field region oxidations, which comprises the following steps: - forming the CMOS gate on a position of the semiconductor material between he field region oxidations; - covering photo-resistor and proceeding developing to the photo-resistor y the mask for doping the CMOS drain and source to form a doping open on he photo-resistor; and - doping first-type impurity to form the CMOS drain region and source region; and the characteristics of the method being that: before doping first-type impurity, a shield object on the gate is formed and taked with the photo-resistor as the doping mask to dope second-type impurity via the doping open in a slope angle for proceeding field region doping and forming channel stop region under the field region oxidation.
TW83103664A 1994-04-25 1994-04-25 Fabrication method to form channel stop region by doping field region TW227071B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW83103664A TW227071B (en) 1994-04-25 1994-04-25 Fabrication method to form channel stop region by doping field region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW83103664A TW227071B (en) 1994-04-25 1994-04-25 Fabrication method to form channel stop region by doping field region

Publications (1)

Publication Number Publication Date
TW227071B true TW227071B (en) 1994-07-21

Family

ID=51348418

Family Applications (1)

Application Number Title Priority Date Filing Date
TW83103664A TW227071B (en) 1994-04-25 1994-04-25 Fabrication method to form channel stop region by doping field region

Country Status (1)

Country Link
TW (1) TW227071B (en)

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