TW226474B - A process of forming tungsten contact by using disposable spin-on-glass - Google Patents

Abstract

A process of forming tungsten contact by using disposable spin-on-glasswhich comprises providing a semiconductor structure on the semiconductorsubstrate and providing at least one layer of patterned conductor layerto contact the active element of the semiconductor; the surface of thepatterned conductor structure is irregular surface with horizontal andvertical elements; precipitating an insulation layer on the irregularsurface of the patterned conductor structure and undergoing refluxing; theprocess is characterized in the following steps: precipitates a spin-on-glass on the insulation layer and bakes thespin-on-glass; through the insulation layer and the spin-on-glass, defines a contact onthe element structure and the semiconductor substrate; precipitates a nucleation layer on the spin-on-glass and meanwhile in thecontact; precipitates a tungsten on the nucleation layer; back-etches the tungsten layer and the nucleation layer so as to let thetungsten layer stay only in the contact and meanwhile let part of thetungsten layer residue stay on the spin-on-glass; removes the spin-on-glass so as to remove the residual tungsten layer onthe spin-on-glass; and precipitates a metal layer to complete the contact on the elementstructure and the silicon substrate.