TW222347B - SRAM cell with balanced load resistors - Google Patents

SRAM cell with balanced load resistors

Info

Publication number
TW222347B
TW222347B TW082107757A TW82107757A TW222347B TW 222347 B TW222347 B TW 222347B TW 082107757 A TW082107757 A TW 082107757A TW 82107757 A TW82107757 A TW 82107757A TW 222347 B TW222347 B TW 222347B
Authority
TW
Taiwan
Prior art keywords
sram cell
load resistors
balanced load
metal layer
polysilicon
Prior art date
Application number
TW082107757A
Other languages
English (en)
Inventor
Min-Liang Chen
Werner Juengling
Original Assignee
American Telephone & Telegraph
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone & Telegraph filed Critical American Telephone & Telegraph
Application granted granted Critical
Publication of TW222347B publication Critical patent/TW222347B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/919—Elements of similar construction connected in series or parallel to average out manufacturing variations in characteristics

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW082107757A 1992-11-24 1993-09-21 SRAM cell with balanced load resistors TW222347B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US98085992A 1992-11-24 1992-11-24

Publications (1)

Publication Number Publication Date
TW222347B true TW222347B (en) 1994-04-11

Family

ID=25527904

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082107757A TW222347B (en) 1992-11-24 1993-09-21 SRAM cell with balanced load resistors

Country Status (4)

Country Link
US (1) US5625215A (zh)
EP (1) EP0599555A3 (zh)
JP (1) JPH06216347A (zh)
TW (1) TW222347B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5834815A (en) * 1996-07-23 1998-11-10 Vanguard International Semiconductor Corporation Layout structure for improving resistance uniformity of a polysilicon resistor
US5847442A (en) * 1996-11-12 1998-12-08 Lucent Technologies Inc. Structure for read-only-memory
US6921962B1 (en) 1998-12-18 2005-07-26 Texas Instruments Incorporated Integrated circuit having a thin film resistor located within a multilevel dielectric between an upper and lower metal interconnect layer

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3539839A (en) * 1966-01-31 1970-11-10 Nippon Electric Co Semiconductor memory device
JPS5810863B2 (ja) * 1978-04-24 1983-02-28 株式会社日立製作所 半導体装置
JPS57210663A (en) * 1981-06-19 1982-12-24 Hitachi Ltd Semiconductor memory device
JPS5916370A (ja) * 1982-07-19 1984-01-27 Toshiba Corp 半導体記憶装置
US4841481A (en) * 1985-10-25 1989-06-20 Hitachi, Ltd. Semiconductor memory device
JPS62112362A (ja) * 1985-11-11 1987-05-23 Toshiba Corp 半導体メモリのメモリセル構造
US4641173A (en) * 1985-11-20 1987-02-03 Texas Instruments Incorporated Integrated circuit load device
JPS62169472A (ja) * 1986-01-22 1987-07-25 Hitachi Ltd 半導体集積回路装置
JPS62210666A (ja) * 1986-03-12 1987-09-16 Hitachi Ltd スタチツクｒａｍ
JPH07112014B2 (ja) * 1986-07-09 1995-11-29 株式会社日立製作所 半導体記憶装置
JPS6345853A (ja) * 1986-08-13 1988-02-26 Hitachi Vlsi Eng Corp 半導体集積回路装置
WO1989011162A1 (en) * 1988-05-07 1989-11-16 Seiko Epson Corporation Semiconductor device and semiconductor memory device
JP2866389B2 (ja) * 1989-03-20 1999-03-08 株式会社日立製作所 半導体集積回路装置
US5172202A (en) * 1989-05-31 1992-12-15 Nec Corporation Semiconductor memory cell having high density structure

Also Published As

Publication number Publication date
US5625215A (en) 1997-04-29
EP0599555A2 (en) 1994-06-01
JPH06216347A (ja) 1994-08-05
EP0599555A3 (en) 1995-06-07

Similar Documents

Publication Publication Date Title
AU521113B2 (en) 1-phenyl,2,3-dimethyl,4-amino pyrazolone-5
AU533657B2 (en) Forklift vehicle
AU533643B2 (en) Shunt with error voltage compensation
AU4844579A (en) Pyrazolo-(3,4-g)quinolines
AU529406B2 (en) Tank tilt compensator
AU5938280A (en) General dynamics corp.
AU539737B2 (en) Antifungal benzofuranyl-imadazole derivatives
AU506308B2 (en) Pyrazino [1,2-a] quinoxalines
AU502081B2 (en) Spool valve with hydraulic detent
AU2228677A (en) P. c. v valve
IL59710A (en) 3-(alkylthio,alkylsulphinyl or alkylsulphonyl)-4-quinoline derivatives
IE822488L (en) Cloning vectors for use in streptomyces and related¹organisms
AU6423780A (en) Stranding mavhine provided with central bobbin
AU542692B2 (en) 1,2,4 triazol-i-yl antifungal agents
AU521008B2 (en) Graft copolymers as diffusion control layers in photo- graphic diffusion transfer products
AU6006780A (en) Antifungal imidazole derivatives
AT365552B (de) Schleifkoerper mit schleifkorn, beispielsweise korund
TW222347B (en) SRAM cell with balanced load resistors
AU531245B2 (en) Battery-powered lift trucks
AU7409781A (en) Electrode with polymeric intermediate protective coatings
AU511790B2 (en) Lift truck
AU536493B2 (en) Substituted pyrazinyl-1,2,4-oxadiazoles
AU512700B2 (en) 2-amino-12-benzyl-1,2,3,4,6,7,12,126-octahydroindolo-(2,3-a) quinolizine
AU528035B2 (en) Octahydro-2h-pyrrolo (3,4-g) quinolines
AU5730180A (en) S-triazolo(3,4-c)benzo-as-triazine derivatives