TW216470B - - Google Patents
Info
- Publication number
- TW216470B TW216470B TW081107092A TW81107092A TW216470B TW 216470 B TW216470 B TW 216470B TW 081107092 A TW081107092 A TW 081107092A TW 81107092 A TW81107092 A TW 81107092A TW 216470 B TW216470 B TW 216470B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/01—Manufacture or treatment
- H10D44/041—Manufacture or treatment having insulated gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/462—Buried-channel CCD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/462—Buried-channel CCD
- H10D44/464—Two-phase CCD
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910016045A KR940009601B1 (ko) | 1991-09-14 | 1991-09-14 | 전하전송장치의 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW216470B true TW216470B (show.php) | 1993-11-21 |
Family
ID=19319950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW081107092A TW216470B (show.php) | 1991-09-14 | 1992-09-08 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5240873A (show.php) |
| JP (1) | JP3153647B2 (show.php) |
| KR (1) | KR940009601B1 (show.php) |
| DE (1) | DE4230648B4 (show.php) |
| TW (1) | TW216470B (show.php) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5245212A (en) * | 1989-12-26 | 1993-09-14 | Texas Instruments Incorporated | Self-aligned field-plate isolation between active elements |
| US5298448A (en) * | 1992-12-18 | 1994-03-29 | Eastman Kodak Company | Method of making two-phase buried channel planar gate CCD |
| US5292682A (en) * | 1993-07-06 | 1994-03-08 | Eastman Kodak Company | Method of making two-phase charge coupled device |
| US5460997A (en) * | 1995-01-23 | 1995-10-24 | Eastman Kodak Company | Method of making a confined planar charge coupled device with edge aligned implants and interconnected electrodes |
| US5712203A (en) * | 1995-12-11 | 1998-01-27 | United Microelectronics Corporation | Process for fabricating read-only memory cells using removable barrier strips |
| KR100192328B1 (ko) * | 1996-04-03 | 1999-06-15 | 구본준 | 양방향 수평전하 전송소자 |
| KR100209758B1 (ko) * | 1996-06-26 | 1999-07-15 | 구본준 | 고체 촬상 소자 및 그의 제조 방법 |
| JP3204169B2 (ja) | 1997-07-23 | 2001-09-04 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6300160B1 (en) * | 1999-11-18 | 2001-10-09 | Eastman Kodak Company | Process for charge coupled image sensor with U-shaped gates |
| US6489246B1 (en) * | 2001-05-01 | 2002-12-03 | Eastman Kodak Company | Method for manufacturing charge-coupled image sensors |
| JP5408964B2 (ja) * | 2008-10-30 | 2014-02-05 | シャープ株式会社 | 固体撮像素子および電子情報機器 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3931674A (en) * | 1974-02-08 | 1976-01-13 | Fairchild Camera And Instrument Corporation | Self aligned CCD element including two levels of electrodes and method of manufacture therefor |
| JPS5915498B2 (ja) * | 1975-08-09 | 1984-04-10 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| GB1527894A (en) * | 1975-10-15 | 1978-10-11 | Mullard Ltd | Methods of manufacturing electronic devices |
| JPS53110385A (en) * | 1977-03-08 | 1978-09-27 | Matsushita Electric Ind Co Ltd | Manufacture of ccd |
| JPH0714052B2 (ja) * | 1986-11-05 | 1995-02-15 | 富士写真フイルム株式会社 | 電荷結合デバイスの電極形成方法 |
| JPS63244882A (ja) * | 1987-03-31 | 1988-10-12 | Rohm Co Ltd | 電荷結合素子の製造方法 |
-
1991
- 1991-09-14 KR KR1019910016045A patent/KR940009601B1/ko not_active Expired - Lifetime
-
1992
- 1992-09-08 TW TW081107092A patent/TW216470B/zh not_active IP Right Cessation
- 1992-09-14 US US07/944,879 patent/US5240873A/en not_active Expired - Lifetime
- 1992-09-14 JP JP24445792A patent/JP3153647B2/ja not_active Expired - Lifetime
- 1992-09-14 DE DE4230648A patent/DE4230648B4/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06326136A (ja) | 1994-11-25 |
| KR940009601B1 (ko) | 1994-10-15 |
| US5240873A (en) | 1993-08-31 |
| KR930006828A (ko) | 1993-04-22 |
| JP3153647B2 (ja) | 2001-04-09 |
| DE4230648A1 (de) | 1993-03-18 |
| DE4230648B4 (de) | 2006-04-06 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |