TW202531376A - 基板處理裝置及冷卻方法 - Google Patents

基板處理裝置及冷卻方法

Info

Publication number
TW202531376A
TW202531376A TW113135474A TW113135474A TW202531376A TW 202531376 A TW202531376 A TW 202531376A TW 113135474 A TW113135474 A TW 113135474A TW 113135474 A TW113135474 A TW 113135474A TW 202531376 A TW202531376 A TW 202531376A
Authority
TW
Taiwan
Prior art keywords
flow path
mist
processing apparatus
substrate processing
coolant
Prior art date
Application number
TW113135474A
Other languages
English (en)
Chinese (zh)
Inventor
多賀敏
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202531376A publication Critical patent/TW202531376A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
TW113135474A 2023-09-29 2024-09-19 基板處理裝置及冷卻方法 TW202531376A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023169467 2023-09-29
JP2023-169467 2023-09-29

Publications (1)

Publication Number Publication Date
TW202531376A true TW202531376A (zh) 2025-08-01

Family

ID=95203618

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113135474A TW202531376A (zh) 2023-09-29 2024-09-19 基板處理裝置及冷卻方法

Country Status (4)

Country Link
JP (1) JPWO2025069789A1 (https=)
CN (1) CN121890305A (https=)
TW (1) TW202531376A (https=)
WO (1) WO2025069789A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3626786B2 (ja) * 1995-04-13 2005-03-09 松下冷機株式会社 急速冷却装置
JP2000353707A (ja) * 1999-06-10 2000-12-19 Dainippon Screen Mfg Co Ltd 熱処理装置
JP4022459B2 (ja) * 2002-09-30 2007-12-19 助川電気工業株式会社 冷却器付加熱装置
JP4361811B2 (ja) * 2004-01-09 2009-11-11 東京エレクトロン株式会社 半導体製造装置
JP2008262968A (ja) * 2007-04-10 2008-10-30 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法
GB2609624A (en) * 2021-08-06 2023-02-15 Leybold Gmbh Cooling device, method for cooling a cooling element and layer deposition apparatus

Also Published As

Publication number Publication date
JPWO2025069789A1 (https=) 2025-04-03
CN121890305A (zh) 2026-04-17
WO2025069789A1 (ja) 2025-04-03

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