JPWO2025069789A1 - - Google Patents
Info
- Publication number
- JPWO2025069789A1 JPWO2025069789A1 JP2025548589A JP2025548589A JPWO2025069789A1 JP WO2025069789 A1 JPWO2025069789 A1 JP WO2025069789A1 JP 2025548589 A JP2025548589 A JP 2025548589A JP 2025548589 A JP2025548589 A JP 2025548589A JP WO2025069789 A1 JPWO2025069789 A1 JP WO2025069789A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023169467 | 2023-09-29 | ||
| PCT/JP2024/029501 WO2025069789A1 (ja) | 2023-09-29 | 2024-08-20 | 基板処理装置及び冷却方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2025069789A1 true JPWO2025069789A1 (https=) | 2025-04-03 |
Family
ID=95203618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025548589A Pending JPWO2025069789A1 (https=) | 2023-09-29 | 2024-08-20 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2025069789A1 (https=) |
| CN (1) | CN121890305A (https=) |
| TW (1) | TW202531376A (https=) |
| WO (1) | WO2025069789A1 (https=) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3626786B2 (ja) * | 1995-04-13 | 2005-03-09 | 松下冷機株式会社 | 急速冷却装置 |
| JP2000353707A (ja) * | 1999-06-10 | 2000-12-19 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
| JP4022459B2 (ja) * | 2002-09-30 | 2007-12-19 | 助川電気工業株式会社 | 冷却器付加熱装置 |
| JP4361811B2 (ja) * | 2004-01-09 | 2009-11-11 | 東京エレクトロン株式会社 | 半導体製造装置 |
| JP2008262968A (ja) * | 2007-04-10 | 2008-10-30 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマ処理方法 |
| GB2609624A (en) * | 2021-08-06 | 2023-02-15 | Leybold Gmbh | Cooling device, method for cooling a cooling element and layer deposition apparatus |
-
2024
- 2024-08-20 JP JP2025548589A patent/JPWO2025069789A1/ja active Pending
- 2024-08-20 CN CN202480059444.4A patent/CN121890305A/zh active Pending
- 2024-08-20 WO PCT/JP2024/029501 patent/WO2025069789A1/ja active Pending
- 2024-09-19 TW TW113135474A patent/TW202531376A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN121890305A (zh) | 2026-04-17 |
| TW202531376A (zh) | 2025-08-01 |
| WO2025069789A1 (ja) | 2025-04-03 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20260318 |
|
| A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20260318 |