TW202501600A - 基板處理方法及基板處理系統 - Google Patents

基板處理方法及基板處理系統 Download PDF

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Publication number
TW202501600A
TW202501600A TW113118833A TW113118833A TW202501600A TW 202501600 A TW202501600 A TW 202501600A TW 113118833 A TW113118833 A TW 113118833A TW 113118833 A TW113118833 A TW 113118833A TW 202501600 A TW202501600 A TW 202501600A
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TW
Taiwan
Prior art keywords
substrate
peripheral
area
peripheral modified
wafer
Prior art date
Application number
TW113118833A
Other languages
English (en)
Chinese (zh)
Inventor
山下陽平
Original Assignee
日商東京威力科創股份有限公司
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Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202501600A publication Critical patent/TW202501600A/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00Cutting or separating of wafers, substrates or parts of devices
    • H10P54/30Cutting or separating of wafers, substrates or parts of devices by forming weakened zones for subsequent cutting or separating, e.g. by laser treatment or by ion implantation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0428Apparatus for mechanical treatment or grinding or cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW113118833A 2023-05-30 2024-05-22 基板處理方法及基板處理系統 TW202501600A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023-088500 2023-05-30
JP2023088500 2023-05-30

Publications (1)

Publication Number Publication Date
TW202501600A true TW202501600A (zh) 2025-01-01

Family

ID=93657794

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113118833A TW202501600A (zh) 2023-05-30 2024-05-22 基板處理方法及基板處理系統

Country Status (5)

Country Link
JP (1) JPWO2024247740A1 (https=)
KR (1) KR20260016521A (https=)
CN (1) CN121127950A (https=)
TW (1) TW202501600A (https=)
WO (1) WO2024247740A1 (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108231646A (zh) * 2016-12-13 2018-06-29 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
CN118263105A (zh) * 2018-03-14 2024-06-28 东京毅力科创株式会社 基板处理系统、基板处理方法以及计算机存储介质
WO2020129732A1 (ja) * 2018-12-21 2020-06-25 東京エレクトロン株式会社 基板処理装置及び基板処理方法
TWI855139B (zh) * 2019-10-28 2024-09-11 日商東京威力科創股份有限公司 基板處理方法及基板處理系統
KR102903522B1 (ko) * 2020-04-02 2025-12-23 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치
JP7550018B2 (ja) 2020-10-28 2024-09-12 東京エレクトロン株式会社 処理方法及び処理システム
JP7608023B2 (ja) * 2021-04-19 2025-01-06 株式会社ディスコ 積層ウェーハの研削方法
JP7706273B2 (ja) * 2021-06-24 2025-07-11 東京エレクトロン株式会社 処理方法及び処理システム

Also Published As

Publication number Publication date
WO2024247740A1 (ja) 2024-12-05
KR20260016521A (ko) 2026-02-03
JPWO2024247740A1 (https=) 2024-12-05
CN121127950A (zh) 2025-12-12

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