TW202501600A - 基板處理方法及基板處理系統 - Google Patents
基板處理方法及基板處理系統 Download PDFInfo
- Publication number
- TW202501600A TW202501600A TW113118833A TW113118833A TW202501600A TW 202501600 A TW202501600 A TW 202501600A TW 113118833 A TW113118833 A TW 113118833A TW 113118833 A TW113118833 A TW 113118833A TW 202501600 A TW202501600 A TW 202501600A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- peripheral
- area
- peripheral modified
- wafer
- Prior art date
Links
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P54/00—Cutting or separating of wafers, substrates or parts of devices
- H10P54/30—Cutting or separating of wafers, substrates or parts of devices by forming weakened zones for subsequent cutting or separating, e.g. by laser treatment or by ion implantation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023-088500 | 2023-05-30 | ||
| JP2023088500 | 2023-05-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202501600A true TW202501600A (zh) | 2025-01-01 |
Family
ID=93657794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW113118833A TW202501600A (zh) | 2023-05-30 | 2024-05-22 | 基板處理方法及基板處理系統 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2024247740A1 (https=) |
| KR (1) | KR20260016521A (https=) |
| CN (1) | CN121127950A (https=) |
| TW (1) | TW202501600A (https=) |
| WO (1) | WO2024247740A1 (https=) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231646A (zh) * | 2016-12-13 | 2018-06-29 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
| CN118263105A (zh) * | 2018-03-14 | 2024-06-28 | 东京毅力科创株式会社 | 基板处理系统、基板处理方法以及计算机存储介质 |
| WO2020129732A1 (ja) * | 2018-12-21 | 2020-06-25 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| TWI855139B (zh) * | 2019-10-28 | 2024-09-11 | 日商東京威力科創股份有限公司 | 基板處理方法及基板處理系統 |
| KR102903522B1 (ko) * | 2020-04-02 | 2025-12-23 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법 및 기판 처리 장치 |
| JP7550018B2 (ja) | 2020-10-28 | 2024-09-12 | 東京エレクトロン株式会社 | 処理方法及び処理システム |
| JP7608023B2 (ja) * | 2021-04-19 | 2025-01-06 | 株式会社ディスコ | 積層ウェーハの研削方法 |
| JP7706273B2 (ja) * | 2021-06-24 | 2025-07-11 | 東京エレクトロン株式会社 | 処理方法及び処理システム |
-
2024
- 2024-05-16 KR KR1020257042685A patent/KR20260016521A/ko active Pending
- 2024-05-16 CN CN202480033074.7A patent/CN121127950A/zh active Pending
- 2024-05-16 JP JP2025523457A patent/JPWO2024247740A1/ja active Pending
- 2024-05-16 WO PCT/JP2024/018100 patent/WO2024247740A1/ja not_active Ceased
- 2024-05-22 TW TW113118833A patent/TW202501600A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024247740A1 (ja) | 2024-12-05 |
| KR20260016521A (ko) | 2026-02-03 |
| JPWO2024247740A1 (https=) | 2024-12-05 |
| CN121127950A (zh) | 2025-12-12 |
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