TW202441326A - 處理液、處理液收容體 - Google Patents
處理液、處理液收容體 Download PDFInfo
- Publication number
- TW202441326A TW202441326A TW113100343A TW113100343A TW202441326A TW 202441326 A TW202441326 A TW 202441326A TW 113100343 A TW113100343 A TW 113100343A TW 113100343 A TW113100343 A TW 113100343A TW 202441326 A TW202441326 A TW 202441326A
- Authority
- TW
- Taiwan
- Prior art keywords
- mass
- content
- treatment
- treatment liquid
- acid
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023001728 | 2023-01-10 | ||
| JP2023-001728 | 2023-01-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202441326A true TW202441326A (zh) | 2024-10-16 |
Family
ID=91896859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW113100343A TW202441326A (zh) | 2023-01-10 | 2024-01-04 | 處理液、處理液收容體 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250321487A1 (cg-RX-API-DMAC7.html) |
| JP (1) | JPWO2024150635A1 (cg-RX-API-DMAC7.html) |
| KR (1) | KR20250111202A (cg-RX-API-DMAC7.html) |
| TW (1) | TW202441326A (cg-RX-API-DMAC7.html) |
| WO (1) | WO2024150635A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW202617959A (zh) * | 2024-10-21 | 2026-05-01 | 日商Jsr股份有限公司 | 半導體處理用組成物及處理方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5698070B2 (ja) * | 2011-05-11 | 2015-04-08 | 株式会社Adeka | ポジ型感光性組成物及びその硬化物 |
| US11009796B2 (en) * | 2017-09-22 | 2021-05-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming semiconductor structure |
| JP7274920B2 (ja) * | 2019-04-11 | 2023-05-17 | 東京応化工業株式会社 | 洗浄液、及び金属レジストを備えた支持体の洗浄方法 |
| JP7649752B2 (ja) | 2019-04-12 | 2025-03-21 | インプリア・コーポレイション | 有機金属フォトレジスト現像剤組成物及び処理方法 |
| JP7535933B2 (ja) * | 2020-12-17 | 2024-08-19 | 東京エレクトロン株式会社 | 現像方法及び基板処理システム |
| JP7179147B1 (ja) * | 2021-12-14 | 2022-11-28 | 東京応化工業株式会社 | 金属レジスト除去用洗浄液、及び該洗浄液を用いた洗浄方法 |
-
2023
- 2023-12-21 JP JP2024570123A patent/JPWO2024150635A1/ja active Pending
- 2023-12-21 KR KR1020257020866A patent/KR20250111202A/ko active Pending
- 2023-12-21 WO PCT/JP2023/045866 patent/WO2024150635A1/ja not_active Ceased
-
2024
- 2024-01-04 TW TW113100343A patent/TW202441326A/zh unknown
-
2025
- 2025-06-25 US US19/248,701 patent/US20250321487A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024150635A1 (ja) | 2024-07-18 |
| US20250321487A1 (en) | 2025-10-16 |
| KR20250111202A (ko) | 2025-07-22 |
| JPWO2024150635A1 (cg-RX-API-DMAC7.html) | 2024-07-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI911789B (zh) | 電子材料製造用藥液的製造方法、圖案形成方法、半導體裝置的製造方法、電子材料製造用藥液、容器及品質檢查方法 | |
| TWI783925B (zh) | 感光化射線性或感放射線性組成物的精煉方法、感光化射線性或感放射線性組成物的製造方法、圖案形成方法以及電子器件的製造方法 | |
| KR20180100631A (ko) | 감활성광선성 또는 감방사선성 조성물, 감활성광선성 또는 감방사선성 조성물의 정제 방법, 패턴 형성 방법, 및 전자 디바이스의 제조 방법 | |
| US20250085628A1 (en) | Pattern forming method and method for manufacturing electronic device | |
| US20250321487A1 (en) | Treatment liquid and treatment liquid-housing article | |
| EP2876669B1 (en) | Cleaning fluid for semiconductor, and cleaning method using same | |
| TWI908416B (zh) | 用作沖洗液的藥液、光阻圖案形成方法、半導體晶片之製造方法 | |
| TW202419476A (zh) | 感光化射線性或感放射線性樹脂組成物、光阻膜、圖案形成方法、及電子器件之製造方法 | |
| TW202432815A (zh) | 處理液、處理液收容體 | |
| TW202212997A (zh) | 圖案形成方法 | |
| TW202433201A (zh) | 藥液、藥液收容體 | |
| TW202445264A (zh) | 藥液、藥液收容體、圖案形成方法、電子元件之製造方法 | |
| TW202449132A (zh) | 藥液、藥液收容體 | |
| KR102219155B1 (ko) | 감활성광선성 또는 감방사선성 조성물, 감활성광선성 또는 감방사선성 조성물의 제조 방법, 패턴 형성 방법, 및 전자 디바이스의 제조 방법 |