TW202439640A - 光檢測裝置及電子機器 - Google Patents

光檢測裝置及電子機器 Download PDF

Info

Publication number
TW202439640A
TW202439640A TW113101158A TW113101158A TW202439640A TW 202439640 A TW202439640 A TW 202439640A TW 113101158 A TW113101158 A TW 113101158A TW 113101158 A TW113101158 A TW 113101158A TW 202439640 A TW202439640 A TW 202439640A
Authority
TW
Taiwan
Prior art keywords
photoelectric conversion
light
layer
color
group
Prior art date
Application number
TW113101158A
Other languages
English (en)
Chinese (zh)
Inventor
田村崇人
富樫秀晃
大久保智弘
河合信宏
Original Assignee
日商索尼半導體解決方案公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商索尼半導體解決方案公司 filed Critical 日商索尼半導體解決方案公司
Publication of TW202439640A publication Critical patent/TW202439640A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1847—Multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
TW113101158A 2023-01-23 2024-01-11 光檢測裝置及電子機器 TW202439640A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023008068 2023-01-23
JP2023-008068 2023-01-23

Publications (1)

Publication Number Publication Date
TW202439640A true TW202439640A (zh) 2024-10-01

Family

ID=91970342

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113101158A TW202439640A (zh) 2023-01-23 2024-01-11 光檢測裝置及電子機器

Country Status (5)

Country Link
EP (1) EP4657529A4 (https=)
JP (1) JPWO2024157635A1 (https=)
CN (1) CN120548788A (https=)
TW (1) TW202439640A (https=)
WO (1) WO2024157635A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10284799B2 (en) * 2014-12-18 2019-05-07 Sony Corporation Solid-state image pickup device and electronic apparatus
US20160254300A1 (en) * 2015-02-26 2016-09-01 Dual Aperture International Co., Ltd. Sensor for dual-aperture camera
JP2017157801A (ja) 2016-03-04 2017-09-07 ソニー株式会社 光電変換素子および光電変換素子の製造方法ならびに固体撮像装置
JP6860390B2 (ja) * 2017-03-22 2021-04-14 キヤノン株式会社 撮像素子及びその制御方法、撮像装置、焦点検出装置及び方法
JP6707105B2 (ja) * 2018-04-17 2020-06-10 日本電信電話株式会社 カラー撮像素子および撮像装置
EP3812802A1 (en) * 2019-10-23 2021-04-28 Samsung Electronics Co., Ltd. Image sensor including color separating lens array and electronic apparatus including the image sensor
US20240339469A1 (en) * 2021-08-06 2024-10-10 Sony Semiconductor Solutions Corporation Optical detector and electronic apparatus

Also Published As

Publication number Publication date
WO2024157635A1 (ja) 2024-08-02
EP4657529A1 (en) 2025-12-03
CN120548788A (zh) 2025-08-26
EP4657529A4 (en) 2026-04-29
JPWO2024157635A1 (https=) 2024-08-02

Similar Documents

Publication Publication Date Title
JP7531657B2 (ja) 固体撮像装置
JPWO2018043654A1 (ja) 固体撮像装置およびその製造方法、並びに電子機器
US12557415B2 (en) Imaging element and imaging device
US20250198843A1 (en) Light detecting device
WO2020022100A1 (ja) 撮像素子、電子機器
US20220415958A1 (en) Solid-state imaging element and electronic device
US20240347567A1 (en) Imaging device and electronic apparatus
KR20250105636A (ko) 광검출기, 전자 장치 및 광학 소자
TW202439640A (zh) 光檢測裝置及電子機器
TW202328713A (zh) 攝像裝置
WO2021215299A1 (ja) 撮像素子および撮像装置
KR20240166567A (ko) 광 검출 디바이스
WO2025177740A1 (ja) 光検出装置および電子機器
WO2024024269A1 (ja) 固体撮像装置およびその製造方法
WO2021053940A1 (ja) 撮像素子及び撮像装置
TW202232792A (zh) 固態攝像元件及電子機器