CN120548788A - 光检测装置及电子设备 - Google Patents

光检测装置及电子设备

Info

Publication number
CN120548788A
CN120548788A CN202380091655.1A CN202380091655A CN120548788A CN 120548788 A CN120548788 A CN 120548788A CN 202380091655 A CN202380091655 A CN 202380091655A CN 120548788 A CN120548788 A CN 120548788A
Authority
CN
China
Prior art keywords
photoelectric conversion
light
layer
conversion portion
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380091655.1A
Other languages
English (en)
Chinese (zh)
Inventor
田村崇人
富樫秀晃
大久保智弘
河合信宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN120548788A publication Critical patent/CN120548788A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H10F39/1847—Multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
CN202380091655.1A 2023-01-23 2023-12-13 光检测装置及电子设备 Pending CN120548788A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023008068 2023-01-23
JP2023-008068 2023-01-23
PCT/JP2023/044598 WO2024157635A1 (ja) 2023-01-23 2023-12-13 光検出装置および電子機器

Publications (1)

Publication Number Publication Date
CN120548788A true CN120548788A (zh) 2025-08-26

Family

ID=91970342

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380091655.1A Pending CN120548788A (zh) 2023-01-23 2023-12-13 光检测装置及电子设备

Country Status (5)

Country Link
EP (1) EP4657529A4 (https=)
JP (1) JPWO2024157635A1 (https=)
CN (1) CN120548788A (https=)
TW (1) TW202439640A (https=)
WO (1) WO2024157635A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10284799B2 (en) * 2014-12-18 2019-05-07 Sony Corporation Solid-state image pickup device and electronic apparatus
US20160254300A1 (en) * 2015-02-26 2016-09-01 Dual Aperture International Co., Ltd. Sensor for dual-aperture camera
JP2017157801A (ja) 2016-03-04 2017-09-07 ソニー株式会社 光電変換素子および光電変換素子の製造方法ならびに固体撮像装置
JP6860390B2 (ja) * 2017-03-22 2021-04-14 キヤノン株式会社 撮像素子及びその制御方法、撮像装置、焦点検出装置及び方法
JP6707105B2 (ja) * 2018-04-17 2020-06-10 日本電信電話株式会社 カラー撮像素子および撮像装置
EP3812802A1 (en) * 2019-10-23 2021-04-28 Samsung Electronics Co., Ltd. Image sensor including color separating lens array and electronic apparatus including the image sensor
US20240339469A1 (en) * 2021-08-06 2024-10-10 Sony Semiconductor Solutions Corporation Optical detector and electronic apparatus

Also Published As

Publication number Publication date
WO2024157635A1 (ja) 2024-08-02
EP4657529A1 (en) 2025-12-03
EP4657529A4 (en) 2026-04-29
JPWO2024157635A1 (https=) 2024-08-02
TW202439640A (zh) 2024-10-01

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