JPWO2024157635A1 - - Google Patents

Info

Publication number
JPWO2024157635A1
JPWO2024157635A1 JP2024572876A JP2024572876A JPWO2024157635A1 JP WO2024157635 A1 JPWO2024157635 A1 JP WO2024157635A1 JP 2024572876 A JP2024572876 A JP 2024572876A JP 2024572876 A JP2024572876 A JP 2024572876A JP WO2024157635 A1 JPWO2024157635 A1 JP WO2024157635A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024572876A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024157635A1 publication Critical patent/JPWO2024157635A1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182Colour image sensors
    • H10F39/1825Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182Colour image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184Infrared image sensors
    • H10F39/1847Multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8053Colour filters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8063Microlenses
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11Arrangement of colour filter arrays [CFA]; Filter mosaics
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/703SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704Pixels specially adapted for focusing, e.g. phase difference pixel sets
JP2024572876A 2023-01-23 2023-12-13 Pending JPWO2024157635A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023008068 2023-01-23
PCT/JP2023/044598 WO2024157635A1 (ja) 2023-01-23 2023-12-13 光検出装置および電子機器

Publications (1)

Publication Number Publication Date
JPWO2024157635A1 true JPWO2024157635A1 (https=) 2024-08-02

Family

ID=91970342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024572876A Pending JPWO2024157635A1 (https=) 2023-01-23 2023-12-13

Country Status (5)

Country Link
EP (1) EP4657529A4 (https=)
JP (1) JPWO2024157635A1 (https=)
CN (1) CN120548788A (https=)
TW (1) TW202439640A (https=)
WO (1) WO2024157635A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10284799B2 (en) * 2014-12-18 2019-05-07 Sony Corporation Solid-state image pickup device and electronic apparatus
US20160254300A1 (en) * 2015-02-26 2016-09-01 Dual Aperture International Co., Ltd. Sensor for dual-aperture camera
JP2017157801A (ja) 2016-03-04 2017-09-07 ソニー株式会社 光電変換素子および光電変換素子の製造方法ならびに固体撮像装置
JP6860390B2 (ja) * 2017-03-22 2021-04-14 キヤノン株式会社 撮像素子及びその制御方法、撮像装置、焦点検出装置及び方法
JP6707105B2 (ja) * 2018-04-17 2020-06-10 日本電信電話株式会社 カラー撮像素子および撮像装置
EP3812802A1 (en) * 2019-10-23 2021-04-28 Samsung Electronics Co., Ltd. Image sensor including color separating lens array and electronic apparatus including the image sensor
US20240339469A1 (en) * 2021-08-06 2024-10-10 Sony Semiconductor Solutions Corporation Optical detector and electronic apparatus

Also Published As

Publication number Publication date
WO2024157635A1 (ja) 2024-08-02
EP4657529A1 (en) 2025-12-03
CN120548788A (zh) 2025-08-26
EP4657529A4 (en) 2026-04-29
TW202439640A (zh) 2024-10-01

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