TW202436990A - 反射型遮罩基底、反射型遮罩及半導體元件之製造方法 - Google Patents

反射型遮罩基底、反射型遮罩及半導體元件之製造方法 Download PDF

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Publication number
TW202436990A
TW202436990A TW113104395A TW113104395A TW202436990A TW 202436990 A TW202436990 A TW 202436990A TW 113104395 A TW113104395 A TW 113104395A TW 113104395 A TW113104395 A TW 113104395A TW 202436990 A TW202436990 A TW 202436990A
Authority
TW
Taiwan
Prior art keywords
film
phase shift
reflective mask
reflectivity
reflective
Prior art date
Application number
TW113104395A
Other languages
English (en)
Chinese (zh)
Inventor
大野拓郎
池邊洋平
Original Assignee
日商Ｈｏｙａ股份有限公司
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Application filed by 日商Ｈｏｙａ股份有限公司 filed Critical 日商Ｈｏｙａ股份有限公司
Publication of TW202436990A publication Critical patent/TW202436990A/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW113104395A 2023-02-22 2024-02-05 反射型遮罩基底、反射型遮罩及半導體元件之製造方法 TW202436990A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023025832A JP2024119143A (ja) 2023-02-22 2023-02-22 反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法
JP2023-025832 2023-02-22

Publications (1)

Publication Number Publication Date
TW202436990A true TW202436990A (zh) 2024-09-16

Family

ID=92501016

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113104395A TW202436990A (zh) 2023-02-22 2024-02-05 反射型遮罩基底、反射型遮罩及半導體元件之製造方法

Country Status (4)

Country Link
JP (1) JP2024119143A (https=)
KR (1) KR20250151382A (https=)
TW (1) TW202436990A (https=)
WO (1) WO2024176704A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006228766A (ja) 2005-02-15 2006-08-31 Toppan Printing Co Ltd 極端紫外線露光用マスク、マスクブランク、及び露光方法
JP5233321B2 (ja) 2008-02-27 2013-07-10 凸版印刷株式会社 極端紫外線露光用マスクブランク、極端紫外線露光用マスク、極端紫外線露光用マスクの製造方法及び極端紫外線露光用マスクを用いたパターン転写方法
JP6861095B2 (ja) * 2017-03-03 2021-04-21 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP7475154B2 (ja) * 2020-02-13 2024-04-26 Hoya株式会社 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法
JP7633832B2 (ja) * 2021-02-25 2025-02-20 Hoya株式会社 マスクブランク、反射型マスク、および半導体デバイスの製造方法
JP7826305B2 (ja) * 2021-05-27 2026-03-09 Hoya株式会社 マスクブランク、反射型マスク及び半導体デバイスの製造方法

Also Published As

Publication number Publication date
JP2024119143A (ja) 2024-09-03
KR20250151382A (ko) 2025-10-21
WO2024176704A1 (ja) 2024-08-29

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