JP2024119143A - 反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法 - Google Patents
反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法 Download PDFInfo
- Publication number
- JP2024119143A JP2024119143A JP2023025832A JP2023025832A JP2024119143A JP 2024119143 A JP2024119143 A JP 2024119143A JP 2023025832 A JP2023025832 A JP 2023025832A JP 2023025832 A JP2023025832 A JP 2023025832A JP 2024119143 A JP2024119143 A JP 2024119143A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- phase shift
- reflective mask
- reflectance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023025832A JP2024119143A (ja) | 2023-02-22 | 2023-02-22 | 反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法 |
| PCT/JP2024/002152 WO2024176704A1 (ja) | 2023-02-22 | 2024-01-25 | 反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法 |
| KR1020257026079A KR20250151382A (ko) | 2023-02-22 | 2024-01-25 | 반사형 마스크 블랭크, 반사형 마스크 및 반도체 디바이스의 제조 방법 |
| TW113104395A TW202436990A (zh) | 2023-02-22 | 2024-02-05 | 反射型遮罩基底、反射型遮罩及半導體元件之製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023025832A JP2024119143A (ja) | 2023-02-22 | 2023-02-22 | 反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024119143A true JP2024119143A (ja) | 2024-09-03 |
| JP2024119143A5 JP2024119143A5 (https=) | 2025-12-19 |
Family
ID=92501016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023025832A Pending JP2024119143A (ja) | 2023-02-22 | 2023-02-22 | 反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2024119143A (https=) |
| KR (1) | KR20250151382A (https=) |
| TW (1) | TW202436990A (https=) |
| WO (1) | WO2024176704A1 (https=) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006228766A (ja) | 2005-02-15 | 2006-08-31 | Toppan Printing Co Ltd | 極端紫外線露光用マスク、マスクブランク、及び露光方法 |
| JP5233321B2 (ja) | 2008-02-27 | 2013-07-10 | 凸版印刷株式会社 | 極端紫外線露光用マスクブランク、極端紫外線露光用マスク、極端紫外線露光用マスクの製造方法及び極端紫外線露光用マスクを用いたパターン転写方法 |
| JP6861095B2 (ja) * | 2017-03-03 | 2021-04-21 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
| JP7475154B2 (ja) * | 2020-02-13 | 2024-04-26 | Hoya株式会社 | 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法 |
| JP7633832B2 (ja) * | 2021-02-25 | 2025-02-20 | Hoya株式会社 | マスクブランク、反射型マスク、および半導体デバイスの製造方法 |
| JP7826305B2 (ja) * | 2021-05-27 | 2026-03-09 | Hoya株式会社 | マスクブランク、反射型マスク及び半導体デバイスの製造方法 |
-
2023
- 2023-02-22 JP JP2023025832A patent/JP2024119143A/ja active Pending
-
2024
- 2024-01-25 WO PCT/JP2024/002152 patent/WO2024176704A1/ja not_active Ceased
- 2024-01-25 KR KR1020257026079A patent/KR20250151382A/ko active Pending
- 2024-02-05 TW TW113104395A patent/TW202436990A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW202436990A (zh) | 2024-09-16 |
| KR20250151382A (ko) | 2025-10-21 |
| WO2024176704A1 (ja) | 2024-08-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20251211 |
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| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20251211 |