JP2024119143A - 反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法 - Google Patents

反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法 Download PDF

Info

Publication number
JP2024119143A
JP2024119143A JP2023025832A JP2023025832A JP2024119143A JP 2024119143 A JP2024119143 A JP 2024119143A JP 2023025832 A JP2023025832 A JP 2023025832A JP 2023025832 A JP2023025832 A JP 2023025832A JP 2024119143 A JP2024119143 A JP 2024119143A
Authority
JP
Japan
Prior art keywords
film
thin film
phase shift
reflective mask
reflectance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023025832A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024119143A5 (https=
Inventor
拓郎 大野
Takuo Ono
洋平 池邊
Yohei IKEBE
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2023025832A priority Critical patent/JP2024119143A/ja
Priority to PCT/JP2024/002152 priority patent/WO2024176704A1/ja
Priority to KR1020257026079A priority patent/KR20250151382A/ko
Priority to TW113104395A priority patent/TW202436990A/zh
Publication of JP2024119143A publication Critical patent/JP2024119143A/ja
Publication of JP2024119143A5 publication Critical patent/JP2024119143A5/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24Reflection masks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2023025832A 2023-02-22 2023-02-22 反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法 Pending JP2024119143A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2023025832A JP2024119143A (ja) 2023-02-22 2023-02-22 反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法
PCT/JP2024/002152 WO2024176704A1 (ja) 2023-02-22 2024-01-25 反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法
KR1020257026079A KR20250151382A (ko) 2023-02-22 2024-01-25 반사형 마스크 블랭크, 반사형 마스크 및 반도체 디바이스의 제조 방법
TW113104395A TW202436990A (zh) 2023-02-22 2024-02-05 反射型遮罩基底、反射型遮罩及半導體元件之製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023025832A JP2024119143A (ja) 2023-02-22 2023-02-22 反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
JP2024119143A true JP2024119143A (ja) 2024-09-03
JP2024119143A5 JP2024119143A5 (https=) 2025-12-19

Family

ID=92501016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023025832A Pending JP2024119143A (ja) 2023-02-22 2023-02-22 反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法

Country Status (4)

Country Link
JP (1) JP2024119143A (https=)
KR (1) KR20250151382A (https=)
TW (1) TW202436990A (https=)
WO (1) WO2024176704A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006228766A (ja) 2005-02-15 2006-08-31 Toppan Printing Co Ltd 極端紫外線露光用マスク、マスクブランク、及び露光方法
JP5233321B2 (ja) 2008-02-27 2013-07-10 凸版印刷株式会社 極端紫外線露光用マスクブランク、極端紫外線露光用マスク、極端紫外線露光用マスクの製造方法及び極端紫外線露光用マスクを用いたパターン転写方法
JP6861095B2 (ja) * 2017-03-03 2021-04-21 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP7475154B2 (ja) * 2020-02-13 2024-04-26 Hoya株式会社 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法
JP7633832B2 (ja) * 2021-02-25 2025-02-20 Hoya株式会社 マスクブランク、反射型マスク、および半導体デバイスの製造方法
JP7826305B2 (ja) * 2021-05-27 2026-03-09 Hoya株式会社 マスクブランク、反射型マスク及び半導体デバイスの製造方法

Also Published As

Publication number Publication date
TW202436990A (zh) 2024-09-16
KR20250151382A (ko) 2025-10-21
WO2024176704A1 (ja) 2024-08-29

Similar Documents

Publication Publication Date Title
JP7502510B2 (ja) 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
US20240036457A1 (en) Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method
KR102906466B1 (ko) 반사형 마스크 블랭크, 반사형 마스크, 그리고 반사형 마스크 및 반도체 장치의 제조 방법
JP7676624B2 (ja) 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法
KR102938891B1 (ko) 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반도체 장치의 제조 방법
JP6861095B2 (ja) 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
US8168352B2 (en) Reflective mask blank for EUV lithography and mask for EUV lithography
US20230418148A1 (en) Multilayer reflective film-equipped substrate, reflective mask blank, reflective mask, and method for producing semiconductor device
JP2007109964A (ja) 多層反射膜付き基板、その製造方法、反射型マスクブランクおよび反射型マスク
JP7743590B2 (ja) 反射型マスクブランク、反射型マスク、反射型マスクの製造方法、及び半導体装置の製造方法
JP2007108516A (ja) 多層反射膜付き基板、その製造方法、反射型マスクブランクおよび反射型マスク
US20240411220A1 (en) Multilayer reflective film-attached substrate, reflective mask blank, reflective mask, and method for producing semiconductor device
US20240231216A1 (en) Mask blank, reflective mask, and method for producing semiconductor devices
TW202240279A (zh) 光罩基底、反射型光罩、及半導體裝置之製造方法
JP7826305B2 (ja) マスクブランク、反射型マスク及び半導体デバイスの製造方法
KR20250093487A (ko) 반사형 마스크 블랭크 및 반사형 마스크, 그리고 반사형 마스크 및 반도체 장치의 제조 방법
JP2024134733A (ja) 反射型マスクブランク、反射型マスクの製造方法、反射型マスク、および半導体装置の製造方法
JP2024119143A (ja) 反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法
WO2025089390A1 (ja) 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP2025074011A (ja) 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
TW202443289A (zh) 反射型遮罩基底及反射型遮罩、以及反射型遮罩及半導體裝置之製造方法
WO2022203024A1 (ja) 反射型マスクブランク、反射型マスク、反射型マスクの製造方法及び半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251211

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20251211