KR20250151382A - 반사형 마스크 블랭크, 반사형 마스크 및 반도체 디바이스의 제조 방법 - Google Patents

반사형 마스크 블랭크, 반사형 마스크 및 반도체 디바이스의 제조 방법

Info

Publication number
KR20250151382A
KR20250151382A KR1020257026079A KR20257026079A KR20250151382A KR 20250151382 A KR20250151382 A KR 20250151382A KR 1020257026079 A KR1020257026079 A KR 1020257026079A KR 20257026079 A KR20257026079 A KR 20257026079A KR 20250151382 A KR20250151382 A KR 20250151382A
Authority
KR
South Korea
Prior art keywords
film
thin film
phase shift
reflective mask
reflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257026079A
Other languages
English (en)
Korean (ko)
Inventor
타꾸로 오노
요헤이 이께베
Original Assignee
호야 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20250151382A publication Critical patent/KR20250151382A/ko
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020257026079A 2023-02-22 2024-01-25 반사형 마스크 블랭크, 반사형 마스크 및 반도체 디바이스의 제조 방법 Pending KR20250151382A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023025832A JP2024119143A (ja) 2023-02-22 2023-02-22 反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法
JPJP-P-2023-025832 2023-02-22
PCT/JP2024/002152 WO2024176704A1 (ja) 2023-02-22 2024-01-25 反射型マスクブランク、反射型マスク及び半導体デバイスの製造方法

Publications (1)

Publication Number Publication Date
KR20250151382A true KR20250151382A (ko) 2025-10-21

Family

ID=92501016

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257026079A Pending KR20250151382A (ko) 2023-02-22 2024-01-25 반사형 마스크 블랭크, 반사형 마스크 및 반도체 디바이스의 제조 방법

Country Status (4)

Country Link
JP (1) JP2024119143A (https=)
KR (1) KR20250151382A (https=)
TW (1) TW202436990A (https=)
WO (1) WO2024176704A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006228766A (ja) 2005-02-15 2006-08-31 Toppan Printing Co Ltd 極端紫外線露光用マスク、マスクブランク、及び露光方法
JP5233321B2 (ja) 2008-02-27 2013-07-10 凸版印刷株式会社 極端紫外線露光用マスクブランク、極端紫外線露光用マスク、極端紫外線露光用マスクの製造方法及び極端紫外線露光用マスクを用いたパターン転写方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6861095B2 (ja) * 2017-03-03 2021-04-21 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP7475154B2 (ja) * 2020-02-13 2024-04-26 Hoya株式会社 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法
JP7633832B2 (ja) * 2021-02-25 2025-02-20 Hoya株式会社 マスクブランク、反射型マスク、および半導体デバイスの製造方法
JP7826305B2 (ja) * 2021-05-27 2026-03-09 Hoya株式会社 マスクブランク、反射型マスク及び半導体デバイスの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006228766A (ja) 2005-02-15 2006-08-31 Toppan Printing Co Ltd 極端紫外線露光用マスク、マスクブランク、及び露光方法
JP5233321B2 (ja) 2008-02-27 2013-07-10 凸版印刷株式会社 極端紫外線露光用マスクブランク、極端紫外線露光用マスク、極端紫外線露光用マスクの製造方法及び極端紫外線露光用マスクを用いたパターン転写方法

Also Published As

Publication number Publication date
JP2024119143A (ja) 2024-09-03
TW202436990A (zh) 2024-09-16
WO2024176704A1 (ja) 2024-08-29

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