TW202430306A - 基板處理方法及基板處理系統 - Google Patents

基板處理方法及基板處理系統 Download PDF

Info

Publication number
TW202430306A
TW202430306A TW112134990A TW112134990A TW202430306A TW 202430306 A TW202430306 A TW 202430306A TW 112134990 A TW112134990 A TW 112134990A TW 112134990 A TW112134990 A TW 112134990A TW 202430306 A TW202430306 A TW 202430306A
Authority
TW
Taiwan
Prior art keywords
substrate
notch
wafer
peripheral
modified layer
Prior art date
Application number
TW112134990A
Other languages
English (en)
Chinese (zh)
Inventor
山下陽平
森弘明
中村洋介
柴和宏
岩永和也
久野和哉
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202430306A publication Critical patent/TW202430306A/zh

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03Observing, e.g. monitoring, the workpiece
    • B23K26/032Observing, e.g. monitoring, the workpiece using optical means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00Bonding of wafers, substrates or parts of devices
    • H10P10/12Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0428Apparatus for mechanical treatment or grinding or cutting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604Process monitoring, e.g. flow or thickness monitoring
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606Position monitoring, e.g. misposition detection or presence detection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW112134990A 2022-09-30 2023-09-14 基板處理方法及基板處理系統 TW202430306A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-158103 2022-09-30
JP2022158103 2022-09-30

Publications (1)

Publication Number Publication Date
TW202430306A true TW202430306A (zh) 2024-08-01

Family

ID=90477303

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112134990A TW202430306A (zh) 2022-09-30 2023-09-14 基板處理方法及基板處理系統

Country Status (5)

Country Link
JP (1) JPWO2024070309A1 (https=)
KR (1) KR20250078974A (https=)
CN (1) CN119948602A (https=)
TW (1) TW202430306A (https=)
WO (1) WO2024070309A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102903522B1 (ko) * 2020-04-02 2025-12-23 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4232148B2 (ja) * 2003-01-28 2009-03-04 株式会社Sumco 貼り合わせ基板の製造方法
JP6286256B2 (ja) * 2014-03-31 2018-02-28 株式会社東京精密 ウエハマーキング・研削装置及びウエハマーキング・研削方法
CN118263105A (zh) 2018-03-14 2024-06-28 东京毅力科创株式会社 基板处理系统、基板处理方法以及计算机存储介质
KR102903523B1 (ko) * 2018-04-27 2025-12-23 도쿄엘렉트론가부시키가이샤 기판 처리 시스템 및 기판 처리 방법
TWI832975B (zh) * 2019-03-08 2024-02-21 日商東京威力科創股份有限公司 處理裝置及處理方法
KR102810856B1 (ko) * 2019-09-02 2025-05-20 삼성전자주식회사 반도체 소자 제조 장치, 반도체 소자 검사 장치 및 반도체 소자 제조 방법
JP7386075B2 (ja) * 2019-12-25 2023-11-24 東京エレクトロン株式会社 基板処理方法及び基板処理システム

Also Published As

Publication number Publication date
JPWO2024070309A1 (https=) 2024-04-04
WO2024070309A1 (ja) 2024-04-04
CN119948602A (zh) 2025-05-06
KR20250078974A (ko) 2025-06-04

Similar Documents

Publication Publication Date Title
CN113710408B (zh) 处理装置和处理方法
TWI809251B (zh) 基板處理裝置及基板處理方法
TWI857094B (zh) 處理裝置及處理方法
TWI857095B (zh) 處理裝置及處理方法
TWI860382B (zh) 處理裝置及處理方法
JP7780534B2 (ja) 処理方法及び処理システム
TWI877184B (zh) 處理裝置及處理方法
TWI832975B (zh) 處理裝置及處理方法
TW202430306A (zh) 基板處理方法及基板處理系統
JP7706273B2 (ja) 処理方法及び処理システム
JP2025114182A (ja) 基板処理方法及び基板処理システム
JP7633882B2 (ja) 処理システム及び処理方法
JP2025114191A (ja) 基板処理方法及び基板処理システム
JP2023180066A (ja) 基板処理装置及び位置調整方法
TW202614195A (zh) 基板處理裝置及基板處理方法
JP2026020680A (ja) デバイスチップの製造方法
JP2026020679A (ja) デバイスチップの製造方法
JP2023032215A (ja) 加工方法