TW202429087A - Method for detecting of detection circuit - Google Patents

Abstract

The present invention discloses a method for detecting of a detection circuit, which is applied for detecting a circuit under test. The method according to the present invention provides a test power source to an input terminal of at least one line in the circuit under test, and a test signal is detected from an output terminal of the least one line in the circuit under test by coupling a probe element during a test period. And, the test period is corresponding to a material characteristic of the least one line. Thus, the quantitative characteristic of the detection circuit may be detected, and the least one line is completed to test in the corresponded test period.

Description

Testing method of testing circuit

The present invention relates to a testing method, in particular to a testing method for testing circuits, which is used to test the electrical properties of components and circuits of the circuit to be tested.

The manufacturing of integrated circuits (ICs) or chips will first go through the upstream IC design company proposing a corresponding circuit design solution. The midstream semiconductor foundry will provide the corresponding semiconductor process for foundry manufacturing based on the IC design company's circuit design solution. The downstream packaging and testing factory will then conduct circuit testing on the integrated circuits (ICs) or chips produced by the semiconductor foundry. Therefore, circuit testing is an indispensable stage in the manufacturing process of integrated circuits (ICs) or chips. Whether it is a traditional packaging type or a wafer-level packaging, the wafer type and packaging type of the integrated circuit (IC) or chip must undergo a specific testing procedure to ensure that each electronic component inside the integrated circuit (IC) or chip operates normally.

Furthermore, after the integrated circuit (IC) or chip is placed on the circuit board, the circuit layout on the circuit board also needs to be tested and verified, such as circuit testing and circuit verification of the printed circuit board (PCB). Nowadays, automatic test equipment (ATE) is used to automatically test electronic components on the circuit board, and even to test the integrated circuit (IC) or chip on the circuit board.

However, during the test process, the probe is used to contact the test pad or pin on the circuit board, and the test voltage may cause sparks. The automated test machine does not provide effective quantitative data for the test personnel to understand. For example, the detection device of Chinese Patent No. CN104422860B of Nidec Read Co., Ltd. uses a determination unit to determine whether the constant current source provides a constant current to the test circuit and whether the test circuit maintains a voltage slope to determine whether the test circuit is defective, but it cannot obtain an accurate quantifiable value.

In addition, different materials of the circuits under test will result in different polarization reaction times of the circuits under test, which may even exceed the test time of the general circuits under test, thereby causing circuit defects of the circuits under test that occur after the test time has passed to be undetected.

Based on the above-mentioned problem, the present invention provides a detection method for a detection circuit, which provides a test power supply to an input end of at least one line of a circuit to be tested, and couples and measures at an output end of the at least one line through at least one probe element, and allows the circuit to be tested to generate a test signal within a test time corresponding to the line material characteristics of the at least one line, thereby allowing the detection circuit to obtain quantifiable data from the circuit to be tested and complete the test within the corresponding test time.

One purpose of the present invention is to provide a detection circuit, which is coupled to a circuit to be tested by a probe element, and provides a test power supply to an input terminal of the circuit to be tested, so that an output terminal of the circuit to be tested generates a test signal to the probe element, so as to obtain a corresponding test signal within a test time, and the test time corresponds to a line material property of the circuit to be tested, so that quantifiable data can be obtained from the circuit to be tested and the test can be completed within the corresponding test time.

In view of the above-mentioned purpose, the present invention provides a detection method for a detection circuit, which is applied to detect a circuit to be tested, wherein the circuit to be tested has at least one circuit.

The present invention further provides an embodiment, wherein when the test signal is in a boost phase and the voltage reduction value is greater than a first threshold value, the test signal corresponds to a first abnormal state of the circuit to be tested, and when the test signal is in a saturation phase and the voltage reduction value is greater than a second threshold value, the test signal corresponds to a second abnormal state of the circuit to be tested.

The present invention further provides an embodiment, wherein a first test impedance value of the test signal in a first abnormal state is greater than a second test impedance value of the test signal in a second abnormal state.

The present invention further provides an embodiment, wherein the first test impedance value and the second test impedance value are greater than a third test impedance value of the test signal in a normal state.

The present invention further provides an embodiment, wherein the first test impedance value is 100 ohms to 10k ohms.

The present invention further provides an embodiment, wherein the test power source is 100 volts to 350 volts.

The present invention further provides an embodiment, wherein the test time is greater than a polarization reaction time of the circuit to be tested.

The present invention further provides an embodiment, wherein the circuit material characteristic has a polarization parameter, and the polarization parameter corresponds to the polarization reaction time.

The present invention further provides an embodiment, wherein the test power source is a current source, and the test current is 5 mA to 20 mA.

The present invention further provides an embodiment, wherein the at least one circuit is further coupled to an electronic component.

In order to enable you to have a deeper understanding and knowledge of the features and effects of the present invention, we would like to provide you with a better embodiment and detailed description, as follows:

Certain terms are used in the specification and claims to refer to specific components. However, those with ordinary knowledge in the art of the present invention should understand that the same component may be referred to by different terms. Moreover, the specification and claims do not use the difference in name as a way to distinguish components, but use the difference in the overall technology of the components as the criterion for distinction. The term "including" mentioned throughout the specification and claims is an open term and should be interpreted as "including but not limited to". Furthermore, the term "coupled" includes any direct and indirect means of connection. Therefore, if the text describes a first device coupled to a second device, it means that the first device can be directly connected to the second device, or can be indirectly connected to the second device through other devices or other means of connection.

In view of the above-mentioned prior art, the automated testing device cannot provide quantifiable testing data, and thus cannot provide quantifiable values for users to intuitively understand the circuit testing status.

Hereinafter, the present invention will be described in detail by illustrating various embodiments of the present invention with reference to the drawings. However, the concept of the present invention may be embodied in many different forms and should not be construed as being limited to the exemplary embodiments described herein.

First, please refer to FIG. 1, which is a flow chart of an embodiment of the present invention. As shown in the figure, the steps of the detection method of the detection circuit of the present invention include:

Step S10: providing a test power source to be transmitted to the input end of the line of the circuit to be tested;

Step S20: using a probe element to couple the output end of the line of the circuit to be tested; and

Step S30: The circuit to be tested is coupled via the probe element during the test time and generates a test signal.

Please refer to FIG. 2, which is a schematic diagram of a system of an embodiment of the present invention. As shown in the figure, the detection circuit 10 of an embodiment of the present invention includes a sensing circuit 12 and a power measurement unit 14. The detection circuit 10 of the present embodiment is used to detect a circuit to be tested 30, for example: to detect a circuit to be tested on a printed circuit board, an integrated circuit on a wafer, etc. The circuit to be tested 30 includes an electronic component 32 and a line 34, and the electronic component 32 is arranged on the line 34, or there is only the line 34 on the circuit to be tested 30, wherein the line 34 includes an input terminal 342 and an output terminal 344, so that the input terminal 342 is used to couple an output component 142 of the power measurement unit 14, and the output terminal 344 is used to couple a probe component 122 of the sensing circuit 12. In addition, the detection circuit 10 of the present embodiment further includes a control processing unit 20, which is coupled to the sensing circuit 12 and the power measurement unit 14, so as to receive the sensing signal SEN from the sensing circuit 12 and control the power measurement unit 14 via a control signal CTRL.

Referring back to FIG. 1, the detection method of the present invention first executes step S10. In step S10, as shown in FIG. 2, the power measurement unit 14 provides a test power P which is transmitted to the circuit under test 30 via the output element 142 and the input terminal 342. Then, step S20 is executed. The probe element 122 is coupled to the output terminal 344 so that the sensing circuit 12 senses the signal of the output terminal 344 via the probe element 122.

Continuing in step S30, as shown in FIGS. 2 to 3B, the circuit under test 30 receives the test power P at an enable potential (ON) within a test time _TS , and generates a test signal 124 accordingly, that is, the control processing unit 20 controls the power measurement unit 14 to enable the test power P within the test time _TS , so that the circuit under test 30 generates the test signal 124, and transmits the test signal 124 to the probe element 122 through the output terminal 344 to transmit the test signal 124 to the sensing circuit 12, thereby generating a sensing signal SEN to the control processing unit 20, and the control processing unit 20 obtains an abnormal state or a normal state of the circuit under test 30 according to the sensing signal SEN.

The test time _TS of the detection circuit 10 corresponds to a line material property of the line 34 of the circuit 30 to be tested, in particular, a polarization parameter corresponding to a polarization reaction time. That is, in classical electromagnetics, when an electric field is applied to the line 34, the positive and negative charges inside the line 34 will be relatively displaced, thereby generating an electric dipole. This phenomenon is called electric polarization. In the process of providing the test power source P of this embodiment to the line 34, it is equivalent to applying the electric field of the test power source P to the line 34. At this time, the degree of polarization of the line 34 in response to the external electric field can be expressed by the electric susceptibility (χ _e ) is used to measure, and the polarization rate can be used to calculate the capacitance of a material. Therefore, the polarization parameter described in this embodiment is the polarization rate. Since the material of the general line 34 is selected from metals, such as gold, silver, nickel, tin, aluminum, gallium, indium or a combination thereof, the line 34 will be polarized according to its polarization parameter and the test power source P. After the test power source P passes through and exceeds the polarization reaction time, the line 34 is affected by the electric field and polarized.

The test signal 124 of the present embodiment is divided into a voltage signal _VS and a current signal _IS . The test power source P of the present embodiment is a voltage of 100 volts to 350 volts under normal conditions (i.e., after being fully charged and stabilized). When the sensing circuit 12 senses an abnormality, the power measurement unit 14 switches the test power source P to a current source, which is a constant current, and the constant current is a constant value between 1 mA and 30 mA.

The test power source P is provided to the circuit under test 30 in two ways: directly applying a constant voltage to the circuit under test 30, or providing a boosted voltage to the circuit under test 30 and gradually boosting the voltage to an upper limit value.

When the circuit to be tested 30 is in a normal state, as shown in FIG. 3A , the voltage signal _VS and the current signal _IS will not fluctuate, which is equivalent to a constant voltage and a constant current situation. Even if fluctuations occur, the potential drop value of the voltage signal _VS does not exceed or equal to a first threshold value TH1, and the current rise value of the current signal _IS does not exceed or equal to a second threshold value TH2.

When the circuit to be tested 30 is in an abnormal state, as shown in FIG. 3B , the voltage signal _VS and the current signal _IS will fluctuate beyond or equal to the first threshold value TH1 and the second threshold value TH2. When the potential drop value of the voltage signal _VS exceeds or equals the first threshold value TH1, the current rise value of the current signal _IS will exceed or equal to a second threshold value TH2. That is, when the voltage signal _VS decreases to a first drop value V _D1 and exceeds the first threshold value TH1, the current signal _IS will rise to a first rise value _ID1 and exceed the second threshold value TH2. This indicates that the test signal 124 is in the first abnormal state.

In addition, as shown in FIG. 3B , the voltage signal _VS will have a second decreasing value V _D2 , which will be smaller than the first decreasing value V _D2 , and the current signal _IS will have a corresponding second increasing value _ID2 which is also smaller _than the first increasing value _ID1 . Meanwhile, the second decreasing value V _D2 will be equal to the first threshold value TH1 , and the second increasing value _ID2 will be equal to the second threshold value TH2 , that is, when the voltage signal _VS decreases to the second decreasing value V _D2 and is equal to the first threshold value TH1 , the current signal _IS will increase to the second increasing value _ID2 and be equal to the second threshold value TH2 , which indicates that the test signal 124 is in the second abnormal state , therefore , when the voltage signal _VS has the first decreasing value V _D1 or the second decreasing value V _D2 , the current signal _IS will have the first increasing value _ID1 or the second increasing value _ID2 correspondingly . In this embodiment, after the test power P passes through the line 34 and exceeds the polarization response time, the test signal 124 shows a second decreasing value V _D2 and a second increasing value I _D2 . That is to say, the test time TS of this embodiment is greater than the polarization response time of the line 34 , so the sensing circuit 12 measures the second decreasing value V _D2 and the second increasing value I _D2 .

Among them, the current signal _IS represents the leakage current. Based on the fact that resistance is voltage divided by current, it will be as follows (1). Formula (I)

The first drop value V _D1 and the first rise value I _D1 are used to obtain a first test impedance value R _D1 , and the second drop value V _D2 and the second rise value I _D2 are used to obtain a second test impedance value R _D2 , whereby the first test impedance value R _D1 is greater than the second test impedance value R _D2 , and since leakage current and drop value do not occur in a normal state, the test signal 124 corresponds to a third test impedance value R in a normal state, and both the first test impedance value R _D1 and the second test impedance value R _D2 are greater than the third test impedance value R, and the first test impedance value R _D1 corresponds to a first abnormal state of the test signal 124, and the second test impedance value R _D2 corresponds to a second abnormal state of the test signal 124, wherein the first test impedance value R _D1 is 100 ohms (Ω) to 10 kilo ohms (kΩ), and the second test impedance value R _D2 is 100 ohms (Ω) to 1 kiloohm (kΩ).

Referring to FIG. 2, FIG. 4A and FIG. 4B together, they are schematic diagrams of a detection circuit detecting a circuit to be tested according to one embodiment of the present invention and signal curves of a normal state and an abnormal state according to another embodiment. As shown in the figure, the detection circuit 10 can allow the power measurement unit 14 to provide the circuit to be tested 30 with a boosted test power P. Further referring to FIG. 4A, when the boosted test power P is provided to the circuit to be tested 30, when the voltage signal _VS and the current signal _IS measured by the sensing circuit 12 are in a normal state, there will be no signal oscillation. Further referring to FIG. 4B , when the circuit to be tested 30 has an abnormal state, the voltage signal _VS and the current signal _IS of the test signal 124 measured by the sensing circuit 12 through the probe element 122 have abnormal signals, for example: a first abnormal voltage value DV1, a second abnormal voltage value DV2, a first leakage current value DI1 and a second leakage current value DI2.

Among them, the first abnormal voltage DV1 and the first leakage current value DI1 will appear when the voltage signal _VS is in the boost stage, and the second abnormal voltage value DV2 and the second leakage current value DI2 will appear when the voltage signal _VS is in the saturation stage, that is, when the test power source P is boosted to the upper limit value, which is equivalent to applying a constant voltage to the circuit to be tested 30, the second abnormal voltage value DV2 and the second leakage current value DI2 will appear.

As shown in FIG. 2 , in the above embodiment, the control processing unit 20 directly controls the power measurement unit 14 . In addition, the detection circuit 10 of the present invention can be further combined with a control switch module 16 to control whether the test power P is provided to the circuit under test 30 .

Please refer to FIG. 5 and FIG. 6, which are circuit diagrams of the switch module open circuit and the switch module conductive circuit of another embodiment of the present invention. As shown in FIG. 5, when the switch module 16 is open circuit, the power measurement unit 14 cannot provide the test power P to the circuit to be tested 30, and as shown in FIG. 6, when the switch module 16 is conductive, the power measurement unit 14 can provide the test power P to the circuit to be tested 30. Therefore, referring to FIG. 1, in step S30, the power measurement unit 14 provides the test power P, which is supplied to the circuit to be tested 30 through the output element 142 and correspondingly generates a test signal 124 to the probe element 122, and then is transmitted to the sensing circuit 12, thereby transmitting the sensing signal SEN to the control processing unit 20.

Among them, the switch module 16 of this embodiment is a transistor switch element or a plurality of transistor switch elements, such as: field effect transistor (FET), bipolar junction transistor (BJT) or joint field effect transistor (JFET), and the switch module 16 determines the number of transistor switch elements according to the number of input terminals 342 and output terminals 344 of the circuit 30 to be tested.

When the test power source P is a constant voltage and the circuit to be tested 30 is in a normal state, as shown in FIG. 7A , the high level (ON) of the test power source P is within the test time _TS of the circuit to be tested 30, and the switch control signal SW indicates the switching period of the switch module 16, ON indicates that the switch module 16 is turned on, and OFF indicates that the switch module 16 is open and cut off, and the voltage signal _VS indicates the voltage level obtained by the sensing circuit 12. When the normal resistance R appears, the power measurement unit 14 will switch the test power source P to a voltage source (for example: a 100V to 350V voltage source). At this time, the voltage signal _VS does not show any drop in potential, which corresponds to a normal state of the circuit to be tested 30. When the test power source P is a constant voltage and the circuit under test 30 is in an abnormal state, as shown in FIG. 7B , when the voltage signal _VS shows a first decreasing value V _D1 or a second decreasing value V _D2 and the current signal _IS shows a first increasing value _ID1 or a second increasing value _ID2 correspondingly, the power measurement unit 14 switches the test power source P to a current source, which supplies power to the circuit under test 30 through the output element 142.

When the test power source P is a boost power source and the circuit under test 30 is in a normal state, as shown in FIG. 8A , during the conduction (ON) period of the switch control signal SW, the voltage signal _VS does not show any drop in potential. When the test power source P is a boost power source and the circuit under test 30 is in an abnormal state, as shown in FIG. 8B , when the voltage signal _VS shows a first abnormal voltage value DV1 or a second abnormal voltage value DV2, the power measurement unit 14 switches the test power source P to a current source, which supplies power to the circuit under test 30 via the output element 142.

Therefore, it can be known from the embodiments described above that the present invention completes the test within a test time corresponding to a line material characteristic of at least one line of the circuit to be tested, thereby measuring the corresponding test signal 124, that is, obtaining the corresponding voltage signal _VS and current signal _IS , thereby avoiding the test time being shorter than the polarization reaction time of at least one line of the circuit to be tested, that is, avoiding the occurrence of potential changes and corresponding current changes when the missed test line is polarized by an external electric field, thereby allowing the test time to be greater than the polarization reaction time.

In summary, the present invention provides a testing method for a testing circuit, which provides a testing power supply to a circuit to be tested and couples a probe element to the circuit to be tested, and obtains a testing signal within a testing time corresponding to a line material characteristic of the line of the circuit to be tested, thereby obtaining quantifiable data of the circuit to be tested and completing the test within the testing time corresponding to the circuit to be tested, thereby avoiding errors or mistakes.

Therefore, this invention is novel, progressive and can be used in the industry. It should undoubtedly meet the patent application requirements of the Patent Law of our country. Therefore, we have filed an invention patent application in accordance with the law and pray that the Bureau will approve the patent as soon as possible. I am deeply grateful.

However, the above is only a preferred embodiment of the present invention and is not intended to limit the scope of implementation of the present invention. All equivalent changes and modifications made according to the shape, structure, features and spirit described in the patent application scope of the present invention should be included in the patent application scope of the present invention.

10: Detection circuit 12: Sensing circuit 122: Probe element 124: Test signal 14: Power measurement unit 142: Output element 16: Switch module 20: Processing unit 30: Circuit to be tested 32: Electronic element 34: Line 342: Input end 344: Output end CTRL: Control signal DI1: First leakage current value DI2: Second leakage current value DV1: First abnormal voltage value DV2: Second abnormal voltage value _ID1 : First rising value _ID2 : Second rising value _IS : Current signal P: Test power SEN: Sensing signal SW: Switching control signal TH1: First threshold value TH2: Second threshold value _VD1 : First falling value _VD2 : Second falling value _VS : Voltage signal

Figure 1: It is a flow chart of one embodiment of the present invention; Figure 2: It is a schematic diagram of a detection circuit of one embodiment of the present invention detecting a circuit to be tested; Figure 3A: It is a signal curve diagram of a normal state of one embodiment of the present invention; Figure 3B: It is a signal curve diagram of an abnormal state of one embodiment of the present invention; Figure 4A: It is a signal curve diagram of a normal state of another embodiment of the present invention; Figure 4B: It is a signal curve diagram of an abnormal state of another embodiment of the present invention; Figure 5: It is a schematic diagram of an open circuit of a switch module of another embodiment of the present invention; Figure 6: It is a schematic diagram of a conductive switch module of another embodiment of the present invention; Figure 7A: It is a signal curve diagram of a normal state of another embodiment of the present invention; Figure 7B: It is a signal curve diagram of an abnormal state of another embodiment of the present invention; Figure 8A: It is a signal curve diagram of a normal state of another embodiment of the present invention; and Figure 8B: It is a signal curve diagram of an abnormal state of another embodiment of the present invention.

10: Detection circuit

12: Sensing circuit

122: Probe element

124: Test signal

14: Power measurement unit

142: Output element

20: Processing unit

30: Circuit to be tested

32: Electronic components

34: Line

342: Input port

344: Output terminal

CTRL: control signal

P: Test power supply

SEN: Sensing signal

Claims (10)

A detection method for a detection circuit is applied to detect a circuit to be tested, wherein the circuit to be tested has at least one line, and the detection method for the detection circuit comprises: Providing a test power source to transmit to an input end of the at least one line of the circuit to be tested; Using at least one probe element to couple an output end of the at least one line of the circuit to be tested; The circuit to be tested is coupled by the at least one probe element within a test time and generates a test signal; Wherein, the test time corresponds to a line material characteristic of the at least one line. A detection method for a detection circuit as described in claim 1, wherein when the test signal is in a boost phase and the voltage drop value is greater than a first threshold value, the test signal corresponds to a first abnormal state of the circuit to be tested, and when the test signal is in a saturation phase and the voltage drop value is greater than a second threshold value, the test signal corresponds to a second abnormal state of the circuit to be tested. A detection method for a detection circuit as described in claim 2, wherein a first test impedance value of the test signal in a first abnormal state is greater than a second test impedance value of the test signal in a second abnormal state. A detection method for a detection circuit as described in claim 2, wherein the first test impedance value and the second test impedance value are greater than a third test impedance value of the test signal in a normal state. A detection method for a detection circuit as described in claim 3 or 4, wherein the first test impedance value is 100 ohms to 10 kiloohms. A method for testing a test circuit as described in claim 1, wherein the test power source is 100 volts to 350 volts. A method for testing a test circuit as described in claim 1, wherein the test time is greater than a polarization reaction time of the circuit to be tested. A detection method for a detection circuit as described in claim 7, wherein the circuit material characteristic has a polarization parameter, and the polarization parameter corresponds to the polarization reaction time. A detection method for a detection circuit as described in claim 1, wherein the test power source is a current source, and the test current is 5 mA to 20 mA. A detection method for a detection circuit as described in claim 1, wherein the at least one circuit is further coupled to an electronic component.