TW202419208A - 基板處理裝置及基板處理方法 - Google Patents

基板處理裝置及基板處理方法 Download PDF

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Publication number
TW202419208A
TW202419208A TW112122094A TW112122094A TW202419208A TW 202419208 A TW202419208 A TW 202419208A TW 112122094 A TW112122094 A TW 112122094A TW 112122094 A TW112122094 A TW 112122094A TW 202419208 A TW202419208 A TW 202419208A
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TW
Taiwan
Prior art keywords
aqueous solution
concentration
substrate
section
hydrofluoric acid
Prior art date
Application number
TW112122094A
Other languages
English (en)
Chinese (zh)
Inventor
烏野崇
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202419208A publication Critical patent/TW202419208A/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW112122094A 2022-06-24 2023-06-14 基板處理裝置及基板處理方法 TW202419208A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-101701 2022-06-24
JP2022101701 2022-06-24

Publications (1)

Publication Number Publication Date
TW202419208A true TW202419208A (zh) 2024-05-16

Family

ID=89379764

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112122094A TW202419208A (zh) 2022-06-24 2023-06-14 基板處理裝置及基板處理方法

Country Status (3)

Country Link
JP (1) JPWO2023248860A1 (enrdf_load_stackoverflow)
TW (1) TW202419208A (enrdf_load_stackoverflow)
WO (1) WO2023248860A1 (enrdf_load_stackoverflow)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030021183A (ko) * 2000-06-30 2003-03-12 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 실리콘 웨이퍼 에칭 공정
JP4656923B2 (ja) * 2004-12-01 2011-03-23 シャープ株式会社 シリコン結晶基板の製造方法と製造装置
KR20080022917A (ko) * 2006-09-08 2008-03-12 삼성전자주식회사 식각액 공급장치, 식각장치 및 식각방법
JP4995237B2 (ja) * 2009-06-22 2012-08-08 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP2013065614A (ja) * 2011-09-15 2013-04-11 Pre-Tech At:Kk シリコンウェーハのウェットエッチング方法及びウェットエッチング装置
JP2018147908A (ja) * 2015-07-27 2018-09-20 東京エレクトロン株式会社 基板処理方法および基板処理装置

Also Published As

Publication number Publication date
WO2023248860A1 (ja) 2023-12-28
JPWO2023248860A1 (enrdf_load_stackoverflow) 2023-12-28

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