TW202419208A - Substrate processing device and substrate processing method - Google Patents

Abstract

An object of the invention is to provide technology that can suppress the wasteful disposal of chemicals while maintaining the quality of substrate processing. A substrate processing device of the invention comprises a processing section which supplies an aqueous solution containing hydrofluoric acid, nitric acid and phosphoric acid to a substrate, a recovery section which recovers the aqueous solution from the processing section, an adjustment section which adjusts the concentration of the components of the aqueous solution recovered by the recovery section, a supply section which supplies the aqueous solution adjusted by the adjustment section to the processing section, and a control section which controls the adjustment section. The adjustment section has a concentration meter which detects the hydrofluoric acid concentration of the aqueous solution, and a replenishment section which replenishes the hydrofluoric acid, nitric acid and phosphoric acid in the aqueous solution. The control section performs control so as to replenish the hydrofluoric acid, nitric acid and phosphoric acid in the aqueous solution in a predetermined ratio based on the hydrofluoric acid concentration.

Description

Substrate processing device and substrate processing method

The present invention relates to a substrate processing device and a substrate processing method.

The substrate processing method described in Patent Document 1 includes: a step of grinding the substrate surface; and a step of removing a damaged layer formed on the substrate surface due to grinding. The step of removing the damaged layer further includes a step of supplying a processing liquid to the substrate surface. The processing liquid is, for example, an aqueous solution containing hydrofluoric acid and nitric acid. [Prior Art Document] [Patent Document]

[Patent Document 1] Japanese Patent Application Publication No. 2018-147908

[The problem the invention is trying to solve]

One aspect of the present invention provides a technology for suppressing excessive waste of chemical liquid while maintaining the processing quality of the substrate. [Technical means for solving the problem]

According to one aspect of the present invention, a substrate processing device comprises: a processing section for supplying an aqueous solution containing hydrofluoric acid, nitric acid and phosphoric acid to a substrate; a recovery section for recovering the aqueous solution from the processing section; a regulating section for regulating the concentration of the components of the aqueous solution recovered by the recovery section; a supply section for supplying the aqueous solution regulated by the regulating section to the processing section; and a control section for controlling the regulating section. The regulating section comprises: a concentration meter for detecting the hydrofluoric acid concentration of the aqueous solution; and a supply section for supplying hydrofluoric acid, nitric acid and phosphoric acid to the aqueous solution. The control section controls the supply of hydrofluoric acid, nitric acid and phosphoric acid to the aqueous solution in a desired ratio according to the hydrofluoric acid concentration. [Effect of the invention]

According to one aspect of the present invention, it is possible to maintain the processing quality of the substrate while suppressing excessive waste of the chemical solution.

Hereinafter, the embodiments of the present invention will be described with reference to the drawings. In each drawing, the same or corresponding components are given the same symbols and the description thereof is omitted. In this specification, the X-axis direction, the Y-axis direction, and the Z-axis direction are mutually perpendicular directions. The X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is a vertical direction.

Referring to FIG. 1 , a substrate processing device 1 according to an embodiment is described. The substrate processing device 1 processes a substrate W. The substrate W includes a semiconductor wafer such as a silicon wafer. The substrate W may also include a plurality of components formed on the semiconductor wafer. The components include, for example, electronic circuits. The substrate W may also be a stacked substrate on which a plurality of semiconductor wafers are stacked. The stacked substrate is obtained by bonding a plurality of semiconductor wafers.

The substrate processing apparatus 1 includes a loading/unloading station 10, a processing station 20, and a control device 90. The loading/unloading station 10 and the processing station 20 are arranged in this order from the negative direction side of the X-axis to the positive direction side of the X-axis.

The loading and unloading station 10 has a loading table 11. Wafer cassettes C1 to C2 are loaded on the loading table 11. Wafer cassette C1 stores substrates W before processing. Wafer cassette C2 stores substrates W after processing. The number of wafer cassettes C1 and C2 is not particularly limited. Wafer cassettes not shown may store "substrates W that have defects during processing".

The loading and unloading station 10 has a first transport area 12 and a first transport device 13. The first transport area 12 is adjacent to the mounting table 11 and the transition device 21 described later. The first transport device 13 transports the substrate W between a plurality of devices adjacent to the first transport area 12. The first transport device 13 has: a transport arm that holds the substrate W; and a drive unit that moves or rotates the transport arm. The transport arm can move in the horizontal direction (both the X-axis direction and the Y-axis direction) and the vertical direction, and rotate around the vertical axis. A plurality of transport arms can also be provided.

The processing station 20 includes a transition device 21, a second transfer area 22, a second transfer device 23, a polishing device 24, a cleaning device 25, and an etching device 26. In addition, the arrangement and number of devices constituting the processing station 20 are not limited to the arrangement and number shown in FIG. 1 .

The transition device 21 temporarily stores the substrate W. The transition device 21 is provided between the first transfer area 12 and the second transfer area 22 , and transfers the substrate W between the first transfer device 13 and the second transfer device 23 .

The second transport area 22 is adjacent to the transition device 21, the polishing device 24, the cleaning device 25, and the etching device 26. The second transport device 23 transports the substrate W between the plurality of devices adjacent to the second transport area 22. The second transport device 23 has: a transport arm that holds the substrate W; and a drive unit that moves or rotates the transport arm. The transport arm can move in the horizontal direction (both the X-axis direction and the Y-axis direction) and the vertical direction, and rotate around the vertical axis. A plurality of transport arms can also be provided.

The polishing device 24 polishes the substrate W. In this way, the substrate W can be thinned. The polishing device 24 can polish a single side of the substrate W, or can also polish both sides of the substrate W. When polishing both sides of the substrate W, one side and the other side of the substrate W can be polished by separate polishing devices 24. The polishing device 24 polishes the substrate W, for example, by rotating the grinding wheel and the substrate W while pressing the grinding wheel against the substrate W.

The cleaning device 25 cleans the substrate W. In this way, the polishing debris attached to the substrate W can be removed. When the polishing device 24 polishes both sides of the substrate W, the cleaning device 25 cleans both sides of the substrate W. One side and the other side of the substrate W may be cleaned by separate cleaning devices 25. The cleaning device 25 cleans the substrate W by, for example, a brush or a sponge.

The etching device 26 etches the substrate W by supplying a processing liquid to the substrate W. In this way, a damaged layer generated by grinding the substrate W can be removed, and cracking of the substrate W can be suppressed. When the grinding device 24 grinds both sides of the substrate W, the etching device 26 etches both sides of the substrate W. One side and the other side of the substrate W can be etched by separate etching devices 26. The details of the etching device 26 will be described later.

The control device 90 is, for example, a computer and includes a calculation unit 91 such as a CPU (Central Processing Unit) and a storage unit 92 such as a memory. The storage unit 92 stores programs for controlling various processes performed in the substrate processing device 1. The control device 90 controls the operation of the substrate processing device 1 by causing the calculation unit 91 to execute the program stored in the storage unit 92.

Next, referring to FIG. 2 , a substrate processing method according to an embodiment will be described. The substrate processing method includes steps S101 to S103 , for example. Steps S101 to S103 are performed under the control of the control device 90 .

First, the first transfer device 13 takes the substrate W out of the wafer cassette C1 and transfers it to the transition device 21 . Then, the second transfer device 23 takes the substrate W out of the transition device 21 and transfers it to the polishing device 24 .

Next, the polishing device 24 polishes the substrate W (step S101 ). This allows the substrate W to be thinned. Thereafter, the second transport device 23 takes the substrate W out of the polishing device 24 and transports it to the cleaning device 25 .

Next, the cleaning device 25 cleans the substrate W (step S102 ). This can remove the grinding debris attached to the substrate W. Thereafter, the second transport device 23 takes the substrate W out of the cleaning device 25 and transports it to the etching device 26 .

Next, the etching device 26 etches the substrate W (step S103 ). This can remove the damaged layer generated by grinding the substrate W and suppress the breakage of the substrate W. Thereafter, the second transport device 23 takes the substrate W out of the etching device 26 and transports it to the transition device 21 .

Finally, the first transport device 13 takes the substrate W out of the transfer device 21 and stores it in the wafer cassette C2.

The substrate processing method only needs to include step S103. For example, the substrate processing method may also include forming a modified layer inside the substrate W using laser light and dividing the substrate W based on the modified layer, instead of grinding the substrate W (step S101). In any case, as long as the substrate W can be thinned, it will be sufficient.

Next, referring to FIG. 3 , an example of an etching device 26 is described. The etching device 26 is an example of a processing unit. The processing unit supplies a processing liquid L to a substrate W. Although the processing unit is a single-wafer processing device that processes substrates W one by one in the present embodiment, it may also be a batch processing device that processes a plurality of substrates W simultaneously. The processing unit of the single-wafer processing device is described below.

The etching device 26 includes, for example, a processing container 31 , a substrate holding portion 34 , a substrate rotating portion 35 , a nozzle 36 , a nozzle moving portion 37 , a cup 38 , a liquid drain pipe 39 , and an exhaust pipe 40 .

The processing container 31 accommodates the substrate holding portion 34 and the like. A gate 32 and a gate valve 33 for opening and closing the gate 32 are provided on the side wall of the processing container 31. The substrate W is carried into the processing container 31 through the gate 32 by the second transport device 23 (see FIG. 1 ). Then, the substrate W is processed by the processing liquid L in the processing container 31. Thereafter, the substrate W is carried out of the processing container 31 through the gate 32 by the second transport device 23.

The substrate holding portion 34 is disposed inside the processing container 31 and horizontally holds the substrate W. The substrate holding portion 34 has, for example, claws 34a for holding the outer peripheral portion of the substrate W. A plurality of claws 34a are disposed at equal intervals in the circumferential direction of the substrate W. In addition, although not shown, the substrate holding portion 34 can also vacuum-absorb the bottom surface of the substrate W.

The substrate rotating part 35 rotates the substrate holding part 34 to rotate the substrate W together with the substrate holding part 34. The substrate rotating part 35 includes a motor and the like.

The nozzle 36 supplies the processing liquid L to the substrate W. The nozzle 36 supplies the processing liquid L to the rotating substrate W, for example. The processing liquid L includes, for example, an etching liquid and a cleaning liquid. The etching liquid is an aqueous solution including hydrofluoric acid (HF), nitric acid (HNO ₃ ) and phosphoric acid (H ₃ PO ₄ ). The cleaning liquid is pure water such as DIW (Deionized Water). The nozzle 36 supplies the etching liquid and the cleaning liquid to the substrate W in this order. The etching liquid and the cleaning liquid may also be supplied by different nozzles 36. The nozzle 36 is connected to a supply unit 70 described later.

The nozzle moving part 37 moves the nozzle 36 in the horizontal direction. For example, the nozzle moving part 37 moves the nozzle 36 in the radial direction of the substrate W. The nozzle moving part 37 includes, for example, an arm part 37a that holds the nozzle 36 and a driving part 37b that rotates the arm part 37a.

The cup body 38 surrounds the outer periphery of the substrate W held by the substrate holding portion 34 , and collects the processing liquid L scattered from the outer periphery of the substrate W.

The drain pipe 39 and the exhaust pipe 40 are provided at the bottom of the cup body 38. The drain pipe 39 discharges the processing liquid L accumulated in the cup body 38. The drain pipe 39 is connected to the recovery part 50 described later. The exhaust pipe 40 discharges the gas accumulated in the cup body 38.

Next, referring to FIG. 4 , an example of the liquid flow path of the etching liquid L1 is described. The etching liquid L1 is an aqueous solution containing HF, HNO ₃ and H ₃ PO _4. HNO ₃ oxidizes the substrate W to generate oxide, and HF etches the oxide. When the substrate W is a silicon wafer, the silicon wafer is etched according to the following chemical reaction formulas (1) and (2). (1) Si + HNO ₃ + H ₂ O → SiO ₂ + HNO ₂ + H ₂ (2) SiO ₂ + 6HF → H ₂ SiF ₆ + 2H ₂ O In addition, H ₃ PO ₄ is a component for adjusting the viscosity of the etching liquid L1.

As shown in FIG. 4 , the substrate processing apparatus 1 includes a recovery unit 50, a regulating unit 60, and a supply unit 70. The recovery unit 50 recovers the etching liquid L1 from the etching device 26. The regulating unit 60 regulates the component concentration of the etching liquid L1 recovered by the recovery unit 50. The supply unit 70 supplies the etching liquid L1 whose component concentration is regulated by the regulating unit 60 to the etching device 26. The substrate processing apparatus 1 reuses the etching liquid L1. In this way, the amount of the etching liquid L1 to be discarded can be reduced.

The recovery unit 50 has a recovery line 51. The recovery line 51 connects the etching device 26 and the adjustment unit 60. For example, the recovery line 51 connects the drain pipe 39 (see FIG. 3 ) of the etching device 26 and the storage tank 61 of the adjustment unit 60. A filter 52 may also be provided in the middle of the recovery line 51. The filter 52 captures foreign matter in the etching liquid L1.

The regulating unit 60 includes, for example, a storage tank 61, a circulation line 62, a pump 63, a filter 64, a flow meter 65, a concentration meter 66, and a supply unit 67. The storage tank 61 stores the etching liquid L1. The circulation line 62 takes the etching liquid L1 out of the storage tank 61 and returns it to the storage tank 61. By circulating the etching liquid L1, the component concentration can be uniformed.

The pump 63, the filter 64, the flow meter 65 and the concentration meter 66 are arranged in the middle of the circulation pipeline 62. The pump 63 delivers the etching liquid L1. The filter 64 captures foreign matter in the etching liquid L1. The flow meter 65 detects the flow rate of the etching liquid L1. The control device 90 controls the pump 63 so that the detection value of the flow meter 65 reaches the set value. The concentration meter 66 detects the concentration of hydrofluoric acid in the etching liquid L1.

A thermometer and a heater (not shown) may also be provided in the middle of the circulation line 62. The thermometer detects the temperature of the etching liquid L1. The heater heats the etching liquid L1. The control device 90 controls the heater so that the detection value of the thermometer reaches a set value.

The supply unit 67 supplies HF, HNO _{3 and H 3 PO 4 to the etching solution L1. For example, the supply unit 67 supplies HF, HNO 3 and H 3 PO 4 to the storage} tank 61 or the circulation pipeline 62 (the storage tank 61 in FIG. 4 ). The supply unit 67 may supply HF, HNO ₃ or H ₃ PO ₄ in the form of an aqueous solution. The supply unit 67 may supply HF, HNO ₃ and H ₃ PO ₄ sequentially or simultaneously.

The supply unit 67 may also have individual pipelines for each type of chemical liquid. For example, an HF supply amount adjustment unit 67b-1 is provided in the middle of the individual HF pipeline 67a-1. The HF supply amount adjustment unit 67b-1 has, for example, an on-off valve, a measuring tank and an on-off valve in order from the upstream side to the downstream side. The measuring tank measures the supply amount of a batch. In addition, the HF supply amount adjustment unit 67b-1 may also have a tank, a flow meter, a flow controller and an on-off valve. In this case, the control device 90 may also control the supply amount by a meter provided in the tank, or may also control the supply amount by a flow meter (time integral value of the flow rate). Furthermore, the HF supply amount adjustment unit 67b-1 may not have a tank, but may have a flow meter, a flow controller, and an on-off valve. In this case, the control device 90 may control the supply amount by the flow meter (time integral value of the flow rate). The order of the flow meter, the flow controller, and the on-off valve is not particularly limited.

In the middle of the individual HNO ₃ line 67a-2, for example, an HNO ₃ supply amount regulator 67b-2 is provided. The HNO ₃ supply amount regulator 67b-2 is configured similarly to the HF supply amount regulator 67b-1. In addition, in the middle of the individual H ₃ PO ₄ line 67a-3, for example, an H ₃ PO ₄ supply amount regulator 67b-3 is provided. The H ₃ PO ₄ supply amount regulator 67b-3 is configured similarly to the HF supply amount regulator 67b-1.

The waste section 68 wastes the etching liquid L1 stored in the storage tank 61. The etching liquid L1 is disposed of regularly, for example, appropriately according to the time after the etching liquid L1 is replaced or the number of processed substrates W. The waste section 68 has: a discharge line 68a connected to the storage tank 61; and an on-off valve 68b that opens and closes the flow path of the discharge line 68a.

The supply unit 70 includes, for example, a supply line 71, a flow meter 72, a flow controller 73, and an on-off valve 74. The supply line 71 connects the regulating unit 60 and the etching device 26. For example, the supply line 71 connects the circulation line 62 of the regulating unit 60 and the nozzle 36 of the etching device 26 (see FIG. 3 ).

The flow meter 72, the flow controller 73 and the on-off valve 74 are arranged in the middle of the supply line 71. The flow meter 72 detects the flow rate of the etching liquid L1. The flow controller 73 controls the flow rate of the etching liquid L1. The control device 90 controls the flow controller 73 so that the detection value of the flow meter 72 reaches the set value. The on-off valve 74 opens and closes the flow channel of the supply line 71.

As described above, the etching liquid L1 is reused. Therefore, when the supply unit 67 does not supply various chemical liquids, the concentration of each component changes over time as shown in FIG. 5 . Specifically, the HF concentration, HNO ₃ concentration, and H ₃ PO ₄ concentration decrease; the H ₂ O concentration and H ₂ SiF ₆ concentration increase. This can also be seen from the above-mentioned chemical reaction equations (1) and (2). In addition, the decrease in the H ₃ PO ₄ concentration is due to the generation of H ₂ O when etching the substrate W. Due to the generation of H ₂ O, the H ₃ PO ₄ concentration is relatively reduced.

By supplying the chemical liquid through the supply unit 67, it is possible to suppress the change in component concentration and suppress the degradation of the processing quality of the substrate W. To maintain the processing quality of the substrate W, it is important to suppress the change in the concentration of HF, _HNO3 and _{H3PO4 among} the components.

However, it takes time to fully control the concentrations of the three components. For example, after HF is supplied to bring the HF concentration to the set value, if _HNO3 is supplied to bring the _HNO3 concentration to the set value, the HF concentration deviates from the set value. In order to converge the concentrations of all three components to the set values, "supplying HF according to the detected value of HF concentration", "supplying _HNO3 according to the detected value of _HNO3 concentration" and "supplying _H3PO4 according to the detected value of _H3PO4 concentration" are repeated _{multiple times} . As a result, when the liquid level of the etching liquid L1 in the storage tank 61 exceeds the upper limit, the etching liquid L1 stored in the storage tank 61 is discarded.

In order to suppress excessive waste of chemical liquid, it is also conceivable to sequentially supply HF, _HNO3 and _H3PO4 at a predetermined amount according to the number of substrates W to be processed. However, in this case, since none of the HF concentration, _HNO3 concentration and _H3PO4 concentration is monitored, even if a concentration abnormality occurs due to interference, the concentration abnormality cannot be detected. Therefore _, there is a risk that the processing quality of the substrates W _will be degraded.

Therefore, in the present embodiment, only the HF concentration, which is the most important for etching silicon, is controlled among the three component concentrations. The etching speed of the substrate W is mainly determined by the HF concentration. In the present embodiment, HF, _HNO3 and _H3PO4 are supplied at a desired ratio based on the HF concentration. The ratio of the HF supply amount, _{the HNO3} supply amount and _{the H3PO4 supply} amount is preset, for example, based on the above-mentioned chemical reaction formulas (1) and (2) and the target value of each component concentration, and is pre-stored in the memory unit 92 of the control device 90. The ratio may also be any one of a volume ratio, a mass ratio and a molar ratio.

The control device 90 controls the supply of HF, HNO ₃ and H ₃ PO ₄ to the etching liquid L1 at a desired ratio based on the HF concentration detected by the concentration meter 66. In this way, the HF concentration can be maintained at a set value, and the processing quality of the substrate W can be maintained. In addition, since the HNO ₃ concentration and the H ₃ PO ₄ concentration are not controlled but left aside, the adjustment of the component concentration can be completed in a short time, and excessive waste of the chemical solution can be suppressed. In addition, the above ratio is set in a way that the HNO ₃ concentration and the H ₃ PO ₄ concentration can be maintained at their respective target values as much as possible.

As shown in FIG6 , the control device 90 performs a first control to sequentially supply HF, HNO ₃ , and H ₃ PO ₄ to the etching solution L1 at predetermined amounts, for example, when the hydrofluoric acid concentration N is lower than the threshold _value N Th. The HF supply amount, the HNO ₃ supply amount, and the H ₃ PO ₄ supply amount are preset to the above-mentioned desired ratio, and are further set in consideration of the volume of the storage tank 61.

After the control device 90 performs the first control, if the hydrofluoric acid concentration N is still lower than the threshold value N _Th , the control device 90 performs the first control again. Usually, the hydrofluoric acid concentration N can be restored to above the threshold value N _Th by performing the first control once, but if it cannot be restored due to interference, the hydrofluoric acid concentration N can be restored to above the threshold value N _Th by performing the first control again.

In addition, the control device 90 can also perform a second control to continuously supply HF, HNO ₃ and H ₃ PO ₄ to the etching solution L1 at a desired flow rate ratio when the hydrofluoric acid concentration N is lower than the threshold value N _Th . The control device 90 stops the second control when the hydrofluoric acid concentration N returns to the threshold value N _Th .

Next, an example of the adjustment of the component concentration (first control) will be described with reference to Fig. 7. The processing after step S201 shown in Fig. 7 is performed under the control of the control device 90. The processing after step S201 is performed regularly.

First, the concentration meter 66 detects the hydrofluoric acid concentration N of the etching solution L1 (step S201). Then, the control device 90 determines whether the hydrofluoric acid concentration N is lower than the threshold value N _Th (step S202). When the hydrofluoric acid concentration N is higher than the threshold value N _Th (step S202, NO), since there is no need to adjust the component concentration, the control device 90 ends the processing.

On the other hand, when the hydrofluoric acid concentration N is lower than the threshold value N _Th (step S202, YES), since the etching speed of the substrate W is low, the supply unit 67 supplies HF, HNO ₃ and H ₃ PO ₄ to the etching solution L1 in predetermined amounts one by one (step S203). Afterwards, after a predetermined time, the processing after step S201 is performed again.

When the hydrofluoric acid concentration N is still lower than the threshold value N _Th even after the step S203 is performed for the set number of times, the control device 90 interrupts the processing of the substrate W and can also perform control to notify an alarm. The alarm is notified using a notification device. The notification device is, for example, a display device, a warning light, or a buzzer.

Although the above is directed to the implementation of the substrate processing device and the substrate processing method according to the present invention, the present invention is not limited to the above implementation. Various changes, modifications, replacements, additions, deletions and combinations can be made within the scope of the patent application. Of course, they also belong to the technical scope of the present invention.

1: substrate processing device 10: loading and unloading station 11: loading platform 12: first transfer area 13: first transfer device 20: processing station 21: transition device 22: second transfer area 23: second transfer device 24: polishing device 25: cleaning device 26: etching device (processing unit) 31: processing container 32: gate 33: gate valve 34: substrate holding part 34a: claw part 35: substrate rotating part 36: nozzle 37: nozzle moving part 37a: arm part 37b: driving part 38: cup body 39: drain pipe 40: exhaust pipe 50: recovery part 51: recovery pipeline 52, 64: filter 60: adjustment part 61: storage tank 62: circulation pipeline 63: pump 65, 72: flow meter 66: concentration meter 67: supply unit 67a-1, 67a-2, 67a-3: individual pipelines 67b-1, 67b-2, 67b-3: supply amount adjustment unit 68: waste unit 68a: discharge pipeline 68b: on-off valve 70: supply unit 71: supply pipeline 73: flow controller 74: on-off valve 90: control device (control unit) 91: calculation unit 92: memory unit C1, C2: wafer cassette L1: etching liquid L: treatment liquid N: hydrofluoric acid concentration N _Th : threshold value S101~S103: steps S201~S203: step W: substrate

[FIG. 1] FIG. 1 is a top view of a substrate processing apparatus according to an embodiment. [FIG. 2] FIG. 2 is a flow chart of a substrate processing method according to an embodiment. [FIG. 3] FIG. 3 is a cross-sectional view of an example of an etching apparatus. [FIG. 4] FIG. 4 is a diagram showing an example of a liquid flow path of an etching liquid. [FIG. 5] FIG. 5 is a diagram showing an example of a temporal change in a component concentration when a supply unit does not supply a chemical liquid. [FIG. 6] FIG. 6 is a diagram showing an example of a temporal change in a hydrofluoric acid concentration when a supply unit supplies a chemical liquid. [FIG. 7] FIG. 7 is a flow chart showing an example of adjusting a component concentration.

26: Etching device (processing unit)

50: Recycling Department

51: Recovery pipeline

52,64:Filter

60: Adjustment Department

61: Storage slot

62: Circulation pipeline

63: Pump

65,72: Flow meter

66: Concentration meter

67: Supply Department

67a-1, 67a-2, 67a-3: Individual pipelines

67b-1, 67b-2, 67b-3: Supply quantity adjustment department

68: Abandoned Department

68a: discharge line

68b: Open/Close Valve

70: Supply Department

71: Supply pipeline

73:Flow controller

74: Open/Close Valve

90: Control device (control unit)

91: Calculation Department

92: Memory Department

L1: Etching liquid

Claims (12)

A substrate processing device, comprising: a processing section for supplying an aqueous solution containing hydrofluoric acid, nitric acid and phosphoric acid to a substrate; a recovery section for recovering the aqueous solution from the processing section; a regulating section for regulating the concentration of components of the aqueous solution recovered by the recovery section; a supply section for supplying the aqueous solution regulated by the regulating section to the processing section; and a control section for controlling the regulating section; the regulating section comprises: a concentration meter for detecting the hydrofluoric acid concentration of the aqueous solution; and a supply section for supplying hydrofluoric acid, nitric acid and phosphoric acid to the aqueous solution; the control section controls the supply of hydrofluoric acid, nitric acid and phosphoric acid to the aqueous solution in a desired ratio according to the hydrofluoric acid concentration. The substrate processing device as described in claim 1, wherein, when the concentration of the hydrofluoric acid is lower than the threshold value, the control unit performs a first control to sequentially supply the aqueous solution with predetermined amounts of hydrofluoric acid, nitric acid and phosphoric acid. The substrate processing device as described in claim 2, wherein, after the control unit performs the first control, if the concentration of hydrofluoric acid is still lower than the threshold value, the control unit performs the first control again. The substrate processing apparatus as described in claim 1, wherein the control unit performs a second control to continuously supply hydrofluoric acid, nitric acid and phosphoric acid to the aqueous solution at a desired flow rate ratio during a period when the hydrofluoric acid concentration is lower than a threshold value. A substrate processing device as described in any one of claims 1 to 4, wherein, the regulating unit has: a storage tank for storing the aqueous solution recovered by the recovery unit; and a circulation pipeline for taking the aqueous solution out of the storage tank and returning it to the storage tank; the supply unit supplies hydrofluoric acid, nitric acid and phosphoric acid to the storage tank or the circulation pipeline in a desired ratio. A substrate processing device as described in any one of claims 1 to 4, comprising: a polishing section for polishing the substrate; and a transport section for transporting the substrate from the polishing section to the processing section; the processing section supplies the aqueous solution to the substrate polished in the polishing section. A substrate processing method comprises: supplying an aqueous solution containing hydrofluoric acid, nitric acid and phosphoric acid to a substrate in a processing section; recovering the aqueous solution from the processing section; adjusting the concentration of a component of the aqueous solution recovered from the processing section; and supplying the aqueous solution with the adjusted concentration of the component to the processing section; adjusting the concentration of the component further comprises: detecting the concentration of hydrofluoric acid in the aqueous solution; and supplying hydrofluoric acid, nitric acid and phosphoric acid to the aqueous solution in a desired ratio according to the concentration of hydrofluoric acid. The substrate processing method as described in claim 7, wherein the step of adjusting the concentration of the component further includes: when the concentration of the hydrofluoric acid is lower than the threshold value, the step of successively supplying the aqueous solution with predetermined amounts of hydrofluoric acid, nitric acid and phosphoric acid. The substrate processing method as described in claim 8, wherein the step of adjusting the concentration of the component further includes: after the aqueous solution is supplied with hydrofluoric acid, nitric acid and phosphoric acid in succession in the predetermined amounts, if the concentration of the hydrofluoric acid is still lower than the threshold value, the step of supplying the aqueous solution with hydrofluoric acid, nitric acid and phosphoric acid in succession again in the predetermined amounts. The substrate processing method as described in claim 7, wherein the step of adjusting the concentration of the component further includes: during the period when the concentration of the hydrofluoric acid is lower than the threshold value, continuously supplying the aqueous solution with hydrofluoric acid, nitric acid and phosphoric acid at a desired flow ratio. A substrate processing method as described in any one of claims 7 to 10, wherein the step of adjusting the concentration of the component further includes: storing the aqueous solution recovered from the processing section in a storage tank; extracting the aqueous solution from the storage tank to a circulation pipeline and returning it from the circulation pipeline to the storage tank; and supplying hydrofluoric acid, nitric acid and phosphoric acid to the storage tank or the circulation pipeline at a desired ratio. The substrate processing method as described in any one of claims 7 to 10 further comprises: a step of grinding the substrate; and a step of supplying the aqueous solution to the ground substrate.

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