KR102533868B1 - Method for manufacturing wafer - Google Patents

Abstract

The wafer manufacturing method includes an etching process between a lapping process and a polishing process, and the etching process may be a wet etching process using an etchant containing fluoride, nitrate, sulfuric acid, and deionized water, and the wet etching process is It can be made by dipping the wrapped wafer into the etchant contained in an etching bath.

Description

Wafer manufacturing method {METHOD FOR MANUFACTURING WAFER}

The present invention relates to a method of manufacturing a wafer. More specifically, the present invention relates to a wafer manufacturing method having an etching process between a lapping process and a polishing process.

In general, in wafer manufacturing, a slicing process of cutting a single crystal ingot to have a wafer structure, an edge grinding process of grinding the edge of a sliced wafer, and a lapping to improve the surface flatness of the wafer process, an etching process to remove damage applied to the lapped wafer, a grinding process to grind both sides of the etched wafer, a slit etching process to slit-etch the ground wafer, and a slit-etched wafer An edge polishing process of edge polishing, a polishing process of polishing both sides of the edge-polished wafer, and the like may be sequentially performed.

In particular, in the etching process of etching the wrapped wafer during wafer manufacturing, a mixed acid composed of hydrogen fluoride (HF), nitric acid (HNO3), acetic acid (CH3COOH), etc. is used as an etchant, or potassium hydroxide (KOH) and sodium hydroxide (NaHO ) and the like can be used as an etching solution.

However, in the case of the etching process using mixed acid as an etchant, the benefit of improving surface roughness can be obtained, but it may result in not maintaining good flatness. In the case of the etching process using alkali as an etchant, good flatness cannot be maintained. However, it may result in not obtaining the desired surface roughness.

Publication of Patent Publication 10-2019-0124728

One object of the present invention is to provide a wafer manufacturing method having an etching process capable of maintaining good flatness while improving surface roughness between a lapping process and a polishing process.

Another object of the present invention is to provide a wafer manufacturing method having an etching process using an etching solution containing fluoride, nitrate, sulfuric acid and deionized water.

A wafer manufacturing method according to exemplary embodiments for achieving one object of the present invention includes an etching process between a lapping process and a polishing process, wherein the etching process includes fluoride, nitrate, sulfuric acid, and deionized water. It may be a wet etching process using an etchant containing an etchant, and the wet etching process may be performed by dipping the wrapped wafer into the etchant contained in an etching bath.

In exemplary embodiments, the etchant may further include a fluorine-based surfactant, the fluoride salt may be ammonium bifluoride, and the nitrate may be ammonium nitrate, sodium nitrate, or a mixture thereof.

In exemplary embodiments, the wet etching process may be performed by supplying the etchant so that it overflows from the bottom of the etching bath to the top of the etching bath, but when the wafer is loaded in a cassette The cassette is shaken up, down, left, and right so that the etchant can etch evenly over the entire surface of the wafer, and when the wafer is loaded on the barrel, the barrel is rotated to The etchant can be uniformly etched over the entire surface of the wafer, and the etchant can be supplied to have a temperature of 15 to 50 ° C. and an etching rate of 5 to 25 μm per minute.

In exemplary embodiments, further performing a primary cleaning process of cleaning the wrapped wafer before performing the etching process and a secondary cleaning process of cleaning the etched wafer after performing the etching process, The primary cleaning process may be performed by spraying a slurry cleaner containing silica, ethylenediaminetetraacetic acid (EDTA), and an amine compound having a particle size of 7 to 40 μm toward the wrapped wafer, and the secondary The cleaning process may be performed by performing quick dump rinse (QDR) cleaning by dipping into a cleaning bath containing deionized water disposed on one side of the etching bath and spraying deionized water.

A wafer manufacturing method according to exemplary embodiments for achieving another object of the present invention includes slicing a single crystal ingot into wafer units, lapping the sliced wafer, and etching the wrapped wafer , And polishing the etched wafer, wherein the etching may be a wet etching process using an etching solution containing fluoride salts, nitrates, sulfuric acid and deionized water, wherein the wet etching process removes the wrapped wafer It can be made by dipping into the etchant contained in an etching bath.

A wafer manufacturing method according to exemplary embodiments for achieving another object of the present invention includes slicing a single crystal ingot into wafer units, lapping the sliced wafer, and etching the wrapped wafer And, including the step of grinding the etched wafer, the step of slit-etching the ground wafer, and the step of polishing the slate-etched wafer, wherein the etching of the lapped wafer is fluoride fluoride, nitrate , It may be a wet etching process using an etchant containing sulfuric acid and deionized water, and the wet etching process may be performed by dipping the wrapped wafer into the etchant contained in an etching bath.

According to exemplary embodiments of the present invention, as a result of performing an etching process using an etching solution containing fluoride, nitrate, sulfuric acid and deionized water between the lapping process and the polishing process, surface roughness is improved and good flatness is achieved. It can be confirmed that the figure can be maintained.

Thus, the wafer manufacturing method according to the exemplary embodiments of the present invention can obtain a wafer having more improved surface roughness and good flatness, and as a result, a wafer having improved surface roughness and good flatness can be obtained. An effect of improving product reliability of an integrated circuit device such as a manufactured semiconductor device may be expected.

In addition, since the wafer manufacturing method according to exemplary embodiments of the present invention can obtain a wafer maintaining improved surface roughness and good flatness through an etching process, for improvement of surface roughness or / and flatness Even the effect of reducing the process burden in the subsequent process can be expected.

However, the effects of the present invention are not limited to the above-mentioned effects, and may be variously extended without departing from the spirit and scope of the present invention.

1 is a diagram for explaining a wafer manufacturing method according to exemplary embodiments of the present invention.
FIG. 2 is a diagram for explaining an etching process in the wafer manufacturing method according to exemplary embodiments of the present invention of FIG. 1 .
3 is a diagram for explaining a wafer manufacturing method according to exemplary embodiments of the present invention.
4 is a diagram for explaining a wafer manufacturing method according to exemplary embodiments of the present invention.

Since the present invention can be applied with various changes and can have various forms, embodiments will be described in detail in the text. However, this is not intended to limit the present invention to a specific form disclosed, and should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention. Like reference numbers have been used for like elements in describing each figure. Terms such as first and second may be used to describe various components, but the components should not be limited by the terms. These terms are only used for the purpose of distinguishing one component from another. Terms used in this application are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly dictates otherwise. In this application, the terms "comprise" or "consisting of" are intended to designate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, but one or more other features It should be understood that it does not preclude the possibility of the presence or addition of numbers, steps, operations, components, parts, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related art, and unless explicitly defined in the present application, they should not be interpreted in an ideal or excessively formal meaning. don't

And with reference to the accompanying drawings will be described in more detail exemplary embodiments. The same reference numerals are used for the same components in the drawings, and redundant descriptions of the same components are omitted.

1 is a diagram for explaining a wafer manufacturing method according to exemplary embodiments of the present invention.

Referring to FIG. 1 , in the wafer manufacturing method according to exemplary embodiments of the present invention, an etching process (step S13) may be performed between a lapping process (step S11) and a polishing process (step S15), and slicing A lapping process for polishing to improve the flatness of the lapped wafer, an etching process for etching to remove damage to the lapped wafer, and a polishing process for mirroring the etched wafer can be performed sequentially. there is.

In the etching process according to exemplary embodiments of the present invention, an etching solution including fluoride salt, nitrate, sulfuric acid, and deionized water may be used.

In the above-mentioned etchant, nitrate can play a role of oxidizing Si, which is the main component of the wafer, to SiO2 when etching is performed, fluoride fluoride can play a role of dissolving oxidized SiO2, and sulfuric acid promotes oxidation to SiO2. can play a role in

In addition, the aforementioned etchant may further include a surfactant for reaction diffusion on the surface of the wafer when etching is performed, particularly a fluorine-based surfactant that can act stably in an acidic solution.

The etchant used in the etching process according to exemplary embodiments of the present invention may include fluoride salts, nitrates, sulfuric acid, surfactants, and deionized water, and each of the fluoride salts and nitrates in the total etchant is about 1 to 20% by weight. , sulfuric acid may be included to account for about 20 to 80% by weight, surfactant may be included to account for about 0.01 to 1.0% by weight, and deionized water may be included to account for the balance.

Examples of the fluoride salt include ammonium hydrogen fluoride and the like, and examples of the nitrate include ammonium nitrate, sodium nitrate, and mixtures thereof.

Accordingly, examples of the etchants mentioned include those containing ammonium bifluoride, ammonium nitrate, sulfuric acid, surfactant and deionized water, those containing ammonium bifluoride, sodium nitrate, sulfuric acid, surfactant and deionized water, ammonium bifluoride, nitric acid and those containing ammonium, sodium nitrate, sulfuric acid, surfactant and deionized water.

In the case of the etchant mentioned, it can be obtained by dissolving fluoride salts and nitrates in an aqueous solution of sulfuric acid, which has the advantage that almost no fumes are generated when etching is performed, and since it is made of a material with little volatility, it has stability against the etchant. Advantages that can be secured, advantages of easily controlling the etching rate through control of the amount occupied by the components, and the like can be expected.

Furthermore, the aforementioned etchant may further include additives for suppressing generation of nitrogen oxides during etching, and may further include phosphoric acid for controlling etching characteristics depending on the type of wafer.

In addition, the etchant mentioned above can be used not only in an etching process for manufacturing a wafer, as in the exemplary embodiments of the present invention, but also in an etching process for etching an object such as silicon, and thus an integrated circuit device such as a semiconductor device. It can also be used sufficiently for the manufacture of

Hereinafter, an etching process in a wafer manufacturing method according to exemplary embodiments of the present invention will be described in detail.

FIG. 2 is a diagram for explaining an etching process in the wafer manufacturing method according to exemplary embodiments of the present invention of FIG. 1 .

Referring to FIG. 2, the etching process according to exemplary embodiments of the present invention is a wet etching process using an etching solution containing fluoride salts, nitrates, sulfuric acid and deionized water, and an etching device (100) capable of accommodating the etching solution ) can be achieved by using

An etching process according to exemplary embodiments of the present invention can be performed by dipping a wrapped wafer into an etching solution accommodated in an etching bath 23, and in particular, the etching solution is poured into the etching bath from the bottom of the etching bath 23. This can be done by feeding so that it overflows to the top of (23).

Accordingly, the etching apparatus 100 in which the etching process is performed according to exemplary embodiments of the present invention includes an etching bath 23 in which an etching solution is received and a wafer is dipped in, and a supply bath supplying the etching solution to the etching bath 23 25, a pump 27 for flowing the etchant from the supply bath 25 to the etching bath 23, and the like.

In addition, the etching process according to exemplary embodiments of the present invention can be performed on a plurality of wafers at once, and thus, a plurality of loading members 33 such as cassettes and barrels Each wafer can be dipped into the etching solution while being loaded. If the wafers are loaded in the cassette, the cassette is shaken up, down, left, and right to allow the etching solution to etch evenly across the entire face of the wafer. When the wafer is loaded on the barrel, the barrel is rotated at about 1 to 10 rpm so that the etchant can etch evenly over the entire surface of the wafer.

And, in the etching process according to exemplary embodiments of the present invention, an etchant having a temperature of about 15 to 50 ° C can be used, and in the etching apparatus 100 mentioned above, the temperature of the etchant accommodated in the supply bath 25 A cooling member 29 such as a chiller for adjusting and a heating member 31 such as a heater may further be provided.

In particular, the etching rate in the etching process according to exemplary embodiments of the present invention may vary depending on the temperature of the etchant, the concentration of the constituents, etc., but an etching rate of about 5 to 25 μm per minute It can be performed to have, for example, based on double-sided etching, in a state where the temperature of the etchant is adjusted to have about 30 ° C., it can be performed to have an etching rate of about 10 μm per minute, and the temperature of the etchant to have about 37 ° C. In the adjusted state, it can be performed with an etch rate of about 16 μm per minute.

As mentioned above, the wafer manufacturing method according to exemplary embodiments of the present invention performs an etching process using an etchant composed of fluoride, nitrate, sulfuric acid, etc., rather than an etchant composed of mixed acid or an etchant composed of alkali. In addition to improving the roughness, it is possible to more easily remove damage applied to the wafer by lapping, which is a previous process, while maintaining good flatness.

And again referring to FIG. 1, in the wafer manufacturing method according to exemplary embodiments of the present invention, a first cleaning process (step S17) may be further performed before performing the etching process, and after performing the etching process A secondary cleaning process (step S19) may be further performed.

That is, in the wafer manufacturing method according to exemplary embodiments of the present invention, a primary cleaning process of cleaning the wrapped wafer may be further performed before performing the etching process, and the etched wafer may be further performed after the etching process is performed. A secondary cleaning process of cleaning may be further performed.

The primary cleaning process may be performed by spraying a slurry cleaner containing silica, ethylenediaminetetraacetic acid (EDTA), and an amine compound having a particle size of 7 to 40 μm toward the wrapped wafer, and the entire slurry cleaner Among them, silica may be included to account for about 2 to 20% by weight, ethylenediaminetetraacetic acid may be included to account for about 0.1 to 3.0% by weight, and amine compounds may be included to occupy about 0.05 to 3.0% by weight. and deionized water may be included to account for the balance.

In the aforementioned slurry cleaner, silica may serve to clean the wrapped wafer, ethylenediaminetetraacetic acid may serve to prevent contaminants from re-adhering to the wrapped wafer to be cleaned, and amine The compound may serve to further increase detergency.

Spraying of the slurry cleaner in the primary cleaning process may be performed by using a spray nozzle, and a spray nozzle of about 20 to 100 Kgf / cm 2 is placed in a state where the wrapped wafer and the spray nozzle face each other with a gap of about 50 to 100 mm. This can be done by spraying the slurry cleaner with pressure.

Performing the primary cleaning process before performing the etching process, as in the wafer manufacturing method according to exemplary embodiments of the present invention, prevents contamination of the etchant by contaminants remaining on the surface of the wafer during the etching process. This is to promote good reaction of the etchant on the surface of the wafer.

The secondary cleaning process may be performed by using deionized water, and may be performed by dipping into the cleaning bath 35 containing deionized water and spraying the deionized water.

The aforementioned cleaning bath 35 may be disposed on one side of the etching bath 23, and thus, in the secondary cleaning process, the wafer dipped in the etching bath 23 for a certain period of time is lifted to carry out the etching process, and the cleaning bath 23 is immediately removed. It can be done by performing a quick dump rinse (QDR) cleaning by dipping into (35), and by spraying deionized water as a finish.

As described above, the wafer manufacturing method according to exemplary embodiments of the present invention may be performed by performing etching after first cleaning the wrapped wafer and then secondarily cleaning the etched wafer, as mentioned above. Similarly, while improving the surface roughness and maintaining good flatness, damage applied to the wafer by lapping, which is a previous process, can be more easily removed.

Hereinafter, a result of performing an etching process in a wafer manufacturing method according to exemplary embodiments of the present invention and a result of performing an etching process in a conventional wafer manufacturing method were compared.

First, a lapped wafer having a size of 200 mm with a flatness of about 0.60 μm, a total thickness variation (TTV) from the reference plane, and a surface roughness Ra/Rz of about 0.35 μm/2.33 μm. An etching process (Comparative Example 1) was performed to have an etching thickness of about 25 μm using an alkali composed of potassium hydroxide (KOH) as an etchant, and hydrogen fluoride (HF), nitric acid (HNO3) and acetic acid (CH3COOH) The etching process (Comparative Example 2) was performed to have an etching thickness of about 30 μm when a mixed acid consisting of An etching process (Example 1) was performed to have an etching thickness of 30 μm.

As a result, in Comparative Example 1, it was confirmed that the flatness was about 0.75 μm and the surface roughness Ra/Rz was about 0.35 μm/1.78 μm, and in Comparative Example 2, the flatness was about 1.0 μm and the surface roughness Ra/Rz. It was confirmed that was about 0.11 μm/0.64 μm, and in Example 1, it was confirmed that the flatness was about 0.62 μm and the surface roughness Ra/Rz was about 0.10 μm/0.46 μm.

As such, in the case of Comparative Example 1, it was confirmed that the surface roughness was not improved while the flatness was maintained almost as it was, and in the case of Comparative Example 2, the surface roughness was improved but the flatness was further deteriorated. , On the other hand, in the case of Example 1, it was confirmed that surface roughness was improved and good flatness was maintained.

Then, for a 300 mm-sized wafer with a flatness of about 0.70 μm and a surface roughness Ra/Rz of about 0.32 μm/1.85 μm, an alkali composed of potassium hydroxide (KOH) was used as an etchant to etch about 25 μm. An etching process (Comparative Example 3) was performed to have a thickness, and an etching process (Example 2) to have an etching thickness of about 20 μm using a mixture of fluoride salt, nitrate, sulfuric acid and deionized water as an etchant in the present invention. In addition, an etching process (Example 3) was performed to have an etching thickness of about 40 μm.

As a result, in Comparative Example 3, it was confirmed that the flatness was about 1.65 μm and the surface roughness Ra/Rz was about 0.32 μm/1.80 μm, and in Example 2, the flatness was about 0.65 μm and the surface roughness Ra/Rz. It was confirmed that was about 0.10 μm/0.57 μm, and in Example 3, it was confirmed that the flatness was about 0.65 μm and the surface roughness Ra/Rz was about 0.05 μm/0.27 μm.

As such, in the case of Comparative Example 3, it was confirmed that the surface roughness was not improved at all while the flatness was deteriorated, whereas in the case of Examples 2 and 3, it was confirmed that the surface roughness was improved and good flatness was maintained. could

Therefore, the wafer manufacturing method according to exemplary embodiments of the present invention can improve surface roughness and more easily remove damage applied to the wafer by the lapping process while maintaining good flatness.

In addition, since the wafer manufacturing method according to exemplary embodiments of the present invention can improve surface roughness and maintain good flatness even by performing an etching process, the surface of the wafer such as subsequent grinding, slite etching, polishing, etc. It will be possible to reduce the burden on the processing process.

Hereinafter, a wafer manufacturing method according to exemplary embodiments of the present invention will be described in more detail.

3 is a diagram for explaining a wafer manufacturing method according to exemplary embodiments of the present invention.

Referring to FIG. 3 , in the wafer manufacturing method according to exemplary embodiments of the present invention, a single crystal ingot is sliced into wafer units (step S31), the sliced wafer is wrapped (step S33), and the wrapped wafer is etched (step S31). After step S35), the etched wafer may be polished (step S37).

In particular, the above-mentioned etching may be a wet etching process using an etching solution containing fluorofluoride salt, nitrate, sulfuric acid and deionized water as shown in FIGS. 1 and 2, and furthermore, the wet etching process accommodates the wrapped wafer in an etching bath It can be made by dipping in an etching solution to be.

In fact, an etching process is performed so that a thickness of about 24 μm is etched using the etchant in the present invention for a wrapped wafer having a thickness of about 809 μm and a size of 300 mm, and a thickness of about 10 μm is obtained. A polishing process was performed so as to be polished, and a wafer manufacturing process was performed to reduce the thickness of about 34 μm as a whole.

4 is a diagram for explaining a wafer manufacturing method according to exemplary embodiments of the present invention.

Referring to FIG. 4 , in the wafer manufacturing method according to exemplary embodiments of the present invention, a single crystal ingot is sliced into wafer units (step S41), the sliced wafer is wrapped (step S43), and the wrapped wafer is etched (step S41). Step S45), grinding the etched wafer (step S47), slit etching the ground wafer (step S49), and then polishing the slit-etched wafer (step S51).

In particular, the above-mentioned etching may be a wet etching process using an etching solution containing fluorofluoride salt, nitrate, sulfuric acid and deionized water as shown in FIGS. 1 and 2, and furthermore, the wet etching process accommodates the wrapped wafer in an etching bath It can be made by dipping in an etching solution to be.

In fact, an etching process was performed to etch a thickness of about 24 μm using the etchant of the present invention for a wrapped wafer having a thickness of about 817 μm and a size of 300 mm, and a thickness of about 5 μm The grinding process was performed to be ground, the slate etching process was performed so that a thickness of about 3 μm was slit etched, and the polishing process was performed so that a thickness of about 10 μm was polished, and the overall thickness was reduced to about 42 μm. A wafer fabrication process was performed.

In contrast, about 24 μm of etchant consisting of a mixed acid of hydrogen fluoride (HF), nitric acid (HNO 3 ) and acetic acid (CH 3 COOH) was used for a wrapped wafer having a thickness of about 832 μm and a size of 300 mm. In addition to performing an etching process so that a thickness of about ㎛ is etched, a grinding process is performed so that a thickness of about 20 μm is ground, and a slit etching process is performed so that a thickness of about 3 μm is slit etched, and a thickness of about 10 μm is performed. A polishing process was performed to be polished, and a wafer manufacturing process was performed to reduce the thickness of about 52 μm as a whole.

As a result of comparing the overall thickness reduced through the wafer manufacturing method in FIGS. 3 and 4 and the overall thickness reduced through the conventional wafer manufacturing method, when the wafer manufacturing method in FIG. 3 is applied, it is about 45 It was confirmed that the thickness reduction amount of % was shown, and when the wafer manufacturing method in FIG. 4 was applied, it was confirmed that the thickness reduction amount of about 25% compared to the prior art was confirmed.

As such, in the wafer manufacturing method according to exemplary embodiments of the present invention, surface roughness is improved and good flatness is maintained by performing an etching process using an etching solution containing fluoride, nitrate, sulfuric acid, and deionized water. Therefore, it can be seen that it is possible to reduce the burden on subsequent processes of processing the surface of the wafer, such as grinding, slite etching, and polishing.

The wafer manufacturing method according to exemplary embodiments of the present invention may be more actively applied to manufacturing integrated circuit devices such as DRAM, NAND, system semiconductors, and image sensors.

Although the above has been described with reference to preferred embodiments of the present invention, those skilled in the art can variously modify and change the present invention without departing from the spirit and scope of the present invention described in the claims below. You will understand that you can.

23: etching bath 25: supply bath
27: pump 29: cooling member
31: heating member 33: loading member
35: cleaning bath 100: etching device

Claims (10)

In the wafer manufacturing method having an etching process between the lapping process and the polishing process,
The etching process is a wet etching process using an etching solution containing fluorofluoride, nitrate, sulfuric acid and deionized water, and the wet etching process is performed by dipping the wrapped wafer into the etching solution contained in an etching bath, and
A first cleaning process of cleaning the wrapped wafer before performing the etching process and a second cleaning process of cleaning the etched wafer after performing the etching process are further performed, wherein the first cleaning process is 7 It can be made by spraying a slurry cleaner containing silica, ethylenediaminetetraacetic acid (EDTA) and an amine compound having a particle size of 40 μm toward the wrapped wafer, and the secondary cleaning process is performed on one side of the etching bath A wafer manufacturing method, characterized in that it can be achieved by spraying deionized water while performing QDR (quick dump rinse) cleaning by dipping into a cleaning bath in which deionized water is placed in the cleaning bath. According to claim 1,
The wafer manufacturing method, characterized in that the fluoride salt may be ammonium hydrogen fluoride, and the nitrate may be ammonium nitrate, sodium nitrate or a mixture thereof. According to claim 1,
The wafer manufacturing method, characterized in that the etchant may further contain a fluorine-based surfactant and phosphoric acid. According to claim 1,
The wet etching process may be performed by supplying the etchant so as to overflow from a lower portion of the etching bath to an upper portion of the etching bath. According to claim 4,
When the wafer is loaded on the cassette, the cassette is shaken up, down, left, and right so that the etchant can etch evenly over the entire surface of the wafer, and when the wafer is loaded on the barrel In the wafer manufacturing method, characterized in that by rotating the barrel (barrel) to allow the etchant to etch reaction uniformly over the entire surface of the wafer. According to claim 4,
The etchant may be supplied to have a temperature of 15 to 50 ° C., and the wafer manufacturing method, characterized in that carried out to have an etching rate of 5 to 25 μm per minute. delete delete Slicing the single crystal ingot into wafer units;
lapping the sliced wafer;
etching the wrapped wafer; and
Including polishing the etched wafer,
The etching is a wet etching process using an etching solution containing fluorofluoride, nitrate, sulfuric acid and deionized water, wherein the wet etching process is performed by dipping the wrapped wafer into the etching solution contained in an etching bath, and
A first cleaning process of cleaning the wrapped wafer before performing the etching process and a second cleaning process of cleaning the etched wafer after performing the etching process are further performed, wherein the first cleaning process is 7 It can be made by spraying a slurry cleaner containing silica, ethylenediaminetetraacetic acid (EDTA) and an amine compound having a particle size of 40 μm toward the wrapped wafer, and the secondary cleaning process is performed on one side of the etching bath A wafer manufacturing method, characterized in that it can be achieved by spraying deionized water while performing QDR (quick dump rinse) cleaning by dipping into a cleaning bath in which deionized water is placed in the cleaning bath. Slicing the single crystal ingot into wafer units;
lapping the sliced wafer;
etching the wrapped wafer;
grinding the etched wafer;
slit etching the ground wafer; and
Including polishing the slit etched wafer,
Etching the wrapped wafer is a wet etching process using an etching solution containing fluoride, nitrate, sulfuric acid and deionized water, wherein the wet etching process dips the wrapped wafer into the etching solution contained in an etching bath made by, and
A first cleaning process of cleaning the wrapped wafer before performing the etching process and a second cleaning process of cleaning the etched wafer after performing the etching process are further performed, wherein the first cleaning process is 7 It can be made by spraying a slurry cleaner containing silica, ethylenediaminetetraacetic acid (EDTA) and an amine compound having a particle size of 40 μm toward the wrapped wafer, and the secondary cleaning process is performed on one side of the etching bath A wafer manufacturing method, characterized in that it can be achieved by spraying deionized water while performing QDR (quick dump rinse) cleaning by dipping into a cleaning bath in which deionized water is placed in the cleaning bath.

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