CN113043159A - Method for polishing silicon wafer - Google Patents
Method for polishing silicon wafer Download PDFInfo
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- CN113043159A CN113043159A CN202011551771.1A CN202011551771A CN113043159A CN 113043159 A CN113043159 A CN 113043159A CN 202011551771 A CN202011551771 A CN 202011551771A CN 113043159 A CN113043159 A CN 113043159A
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- Prior art keywords
- polishing
- silicon wafer
- retaining ring
- washing
- acidic solution
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- 238000005498 polishing Methods 0.000 title claims abstract description 87
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 69
- 239000010703 silicon Substances 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000004140 cleaning Methods 0.000 claims abstract description 27
- 239000003929 acidic solution Substances 0.000 claims abstract description 20
- 239000012670 alkaline solution Substances 0.000 claims abstract description 18
- 239000004744 fabric Substances 0.000 claims abstract description 11
- 238000007517 polishing process Methods 0.000 claims abstract description 4
- 238000005406 washing Methods 0.000 claims description 23
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 12
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 7
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229920002530 polyetherether ketone Polymers 0.000 claims description 7
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 7
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 7
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 7
- 239000000243 solution Substances 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- 239000004593 Epoxy Substances 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 6
- -1 polyethylene terephthalate Polymers 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 239000002861 polymer material Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims 14
- 230000007547 defect Effects 0.000 abstract description 11
- 239000012535 impurity Substances 0.000 abstract description 11
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 239000002184 metal Substances 0.000 abstract description 9
- 239000002344 surface layer Substances 0.000 abstract description 9
- 239000002253 acid Substances 0.000 description 11
- 239000003513 alkali Substances 0.000 description 10
- 239000002245 particle Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002356 laser light scattering Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Abstract
The surface defects of the wafer caused by metal impurities precipitated from the surface and surface layer part of the retaining ring in the polishing process of the silicon wafer using the retaining ring are reduced. A method for polishing a silicon wafer, wherein the silicon wafer (W) is held by a holding ring (3) at a polishing head (1) while being surrounded by the holding ring, and the front surface of the silicon wafer held by the polishing head is polished while being pressed against a polishing cloth (5) attached to a polishing table (4) and rotated, wherein the method comprises a step of cleaning the holding ring with at least one of an alkaline solution and an acidic solution, and a step of polishing the silicon wafer after the cleaning step with respect to the holding ring.
Description
Technical Field
The present invention relates to a method for polishing a silicon wafer, and more particularly to a method for polishing a silicon wafer cut out of single crystal silicon, using a retainer ring held around the silicon wafer.
Background
Conventionally, as a method for manufacturing a silicon wafer having a mirror surface on one surface, a flow shown in fig. 5 has been generally used. That is, a step of slicing a cylindrical single crystal silicon wafer (step S1), a step of polishing or grinding both surfaces of the sliced wafer (step S2), a step of etching the sliced wafer to remove a strain layer generated by the processing (step S3), a step of attaching the etched wafer to, for example, a polishing head of a single-side single-wafer polishing apparatus via a wafer holder such as wax (step S4), a step of performing primary polishing from an element formation surface, i.e., a front surface of the wafer, to finish (final) polishing by the single-side single-wafer polishing apparatus (step S5), and a step of washing the finish-polished wafer with pure water (step S6) are performed.
As shown in fig. 6, the single-side single wafer polishing apparatus used in the polishing step holds one wafer W by a polishing head 31 via a wafer holder 32 such as wax or a holder, and polishes the front surface of the wafer W while pressing and rotating the wafer W against a polishing cloth 34 attached to a polishing table 33.
In recent years, with the increase in the concentration and density of semiconductor devices, it has been required that the front surface of a mirror-polished wafer has no minute defects, and therefore, the front surface of the silicon wafer is polished to a mirror surface while supplying a slurry-like polishing agent between the silicon wafer W and the polishing cloth 34.
However, in the single-side single-wafer polishing apparatus as described above, in order to hold the silicon wafer W to the polishing head 31, for example, a ring-shaped holding ring 40 surrounding the silicon wafer W as shown in fig. 7 is often used (see, for example, japanese patent application laid-open No. 2017-87332).
The holding ring 40 shown in fig. 7 is composed of a ring-shaped guide 41 for surrounding a silicon wafer, and a support pad 43 bonded and fixed to the guide via a heat sensitive tape 42.
The holding ring 40 is used by being attached to the polishing head 31 at a support pad 43 on a surface opposite to a side on which the guide 41 is provided (the guide 41 is located on the lower side).
The holding ring 40 held around the silicon wafer W is pressed against the polishing pad together with the silicon wafer W. As a result, the silicon wafer W is abraded simultaneously with the polishing, and therefore, the silicon wafer W needs to be replaced periodically.
After the new retainer ring 40 is mounted on the polishing head, simple washing and running-in processing by water are performed (potting processing in stage ち). The running-in process is an operation (also referred to as running-in) of fitting the polishing cloth and the polishing agent to the retainer ring 40 by trial operation using a dummy workpiece.
At this time, the metallic impurities on the surface of the retaining ring 40 (guide 41) are removed while running-in, but the metallic impurities on the surface layer portion are not removed and remain in the retaining ring 40 (guide 41).
As a result, metal impurities are precipitated from the retainer ring 40 (guide 41) during polishing of the silicon wafer W, which may cause defects in the front surface of the silicon wafer W.
Disclosure of Invention
Based on the above circumstances, the present inventors have assiduously studied to solve the above problems, and found that metal impurities on the surface and surface layer portions of the retainer ring (guide) can be removed by subjecting the retainer ring (guide) to a predetermined chemical cleaning treatment before the retainer ring is used for final polishing, thereby achieving the present invention.
The present invention aims to provide a method for polishing a silicon wafer, which can reduce defects in the surface layer of the wafer caused by metal impurities deposited from the surface and the surface layer portion of a retaining ring in the step of polishing the silicon wafer using the retaining ring.
A method for polishing a silicon wafer according to the present invention for solving the above-described problems is a method for polishing a silicon wafer, in which a silicon wafer is held by a holding ring in a state of being surrounded by a polishing head, and the surface of the silicon wafer held by the polishing head is polished while being rotated by being pushed against a polishing cloth attached to a polishing platen, the method including a step of cleaning the holding ring with at least one of an alkaline solution and an acidic solution, and a step of polishing the silicon wafer after the cleaning step with respect to the holding ring.
Preferably, the step of cleaning the retainer ring with at least one of an alkaline solution and an acidic solution is followed by a step of performing a running-in process of conforming the polishing cloth and the polishing agent to the retainer ring by trial operation before the step of polishing the silicon wafer.
In the step of washing the retaining ring with at least either an alkaline solution or an acidic solution, the alkaline solution used for washing the retaining ring is preferably a chemical solution containing ammonia, sodium hydroxide, potassium hydroxide, or tetramethylammonium hydroxide.
In the step of cleaning the holding ring with at least either one of an alkaline solution and an acidic solution, the acidic solution used for cleaning the holding ring is preferably a chemical solution containing hydrofluoric acid, sulfuric acid, hydrochloric acid, acetic acid, and nitric acid.
As a material of the retaining ring, a polymer material that is resistant to the above-described alkaline solution and acidic solution is used, and particularly, any of glass epoxy resin, polyether ether ketone, polyphenylene sulfide, polyethylene terephthalate, and polyimide is preferable.
According to such a method, the retainer ring is pressed with an arbitrary pressure and brought into sliding contact with the polishing cloth in the polishing step of the silicon wafer, but since the alkali cleaning and the acid cleaning are performed in advance, the amount of the metal impurities deposited on the surface and the surface layer of the retainer ring in the polishing step is significantly reduced, and the occurrence of defects on the front surface of the wafer can be prevented.
Drawings
Fig. 1 is a front view of a single-side single wafer polishing apparatus to which the method of polishing a silicon wafer of the present invention can be applied.
Fig. 2 is an enlarged partial cross-sectional view of the single-sided, monolithic abrasive apparatus of fig. 1.
Fig. 3 is a flow chart showing the procedure of the method for polishing a silicon wafer according to the present invention.
FIG. 4 is a graph showing the results of the examples.
Fig. 5 is a flowchart showing the procedure of a conventional method for polishing a silicon wafer.
Fig. 6 is a front view showing the structure of a conventional single-side single-wafer polishing apparatus.
Fig. 7 is a cross-sectional view of the retaining ring.
Detailed Description
Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
Fig. 1 is a front view of a single-side single wafer polishing apparatus to which the method of polishing a silicon wafer of the present invention can be applied. Fig. 2 is an enlarged partial cross-sectional view of the single-sided, monolithic abrasive apparatus of fig. 1.
As shown in fig. 1 and 2, the single-side single-wafer polishing apparatus 100 includes, as a wafer holder attached to a polishing head 1, a flat disk-shaped rubber chuck 2 in which air is sealed, for soft-clamping a silicon wafer W, an annular holding ring 3 adhesively fixed to a lower edge portion of the polishing head 1, and a polishing pad 5 made of foamed polyurethane attached to a polishing surface plate 4. The material of the retaining ring 3 is a polymer material of an alkali-resistant solution and an acidic solution described later, and particularly, any one of glass epoxy resin, polyether ether ketone (PEEK), polyphenylene sulfide (PPS), polyethylene terephthalate (PET), and polyimide (ベスペル) is preferably used.
The polishing head 1 holds one silicon wafer W via the rubber collet 2 and the retaining ring 3, and the polishing head 1 and the polishing platen 4 rotate while polishing the silicon wafer W by pushing the silicon wafer W against the polishing cloth 5 of the polishing platen 4. At this time, the holding ring 3 is pressed by an arbitrary pressure and brought into sliding contact with the polishing pad 5.
In the case of manufacturing a silicon wafer W, as shown in fig. 3, a crystal processed into a columnar shape is sliced into a wafer shape (step SP 1), both surfaces of the sliced wafer are polished or ground to have a desired thickness (step SP 2), and then etched with alkali or the like to remove a strain layer generated by the processing (step SP 3).
Next, the etched silicon wafer W is polished by the single-side single wafer polishing apparatus 100, but first, the cleaning process of the retainer ring 3 is performed (step SP 4). The washing treatment is to be carried out with a detergent made of, for example, glass epoxy resinHold Loop 3 at SC1 (Standard clean solution 1/NH)4OH：1wt%、H2O2: 1wt% of the mixed solution) for 30 minutes, followed by rinsing in pure water. Further, the plate was immersed in HF (1 wt%) for 30 minutes to be pickled, and then rinsed with pure water.
The cleaning process of the retaining ring 3 may be performed in a state where the retaining ring 3 is attached to the polishing head 1, or may be performed before the attachment.
As the alkaline solution used for the alkaline cleaning, any of ammonia, sodium hydroxide, potassium hydroxide, and tetramethylammonium hydroxide (TMAH) may be used.
Further, as the acidic solution used for the acid washing, any of hydrofluoric acid, sulfuric acid, hydrochloric acid, acetic acid, and nitric acid may be used.
Next, the washed retaining ring 3 was mounted in the single-side monolithic polishing apparatus 100, and a running process (in the shape of letter らし) performed by using the dummy workpiece (ダミーワーク) to make the abrasive cloth 5 and the abrasive retaining ring 3 conform to each other (step SP 5).
After the end of the grinding process, the front surface (element-forming surface) of the silicon wafer W is once polished while being soft-gripped by the collet 2 (step SP 6).
Thereafter, a thickness distribution of the shape of the silicon wafer W is measured using an optical sensor or a capacitance sensor (step SP 7), and a thick portion of the back surface of the silicon wafer is selectively plasma-etched based on the data of the thickness distribution (step SP 8) to planarize the back surface.
Further, the front surface of the silicon wafer W is finish-polished while the silicon wafer W is soft-held by the single-side single wafer polishing apparatus 100 (step SP 9), and then the silicon wafer W is washed with pure water (step SP 10), thereby obtaining a silicon wafer having a single-side mirror surface.
Here, in the polishing steps SP6 and SP9, the retainer ring 3 is subjected to an arbitrary pressure and is brought into contact with the polishing pad 5, but since the cleaning step (alkali cleaning or acid cleaning) of step SP4 is performed in advance, the amount of metal impurities deposited on the surface and surface layer of the retainer ring 3 in the polishing step is significantly reduced, and the occurrence of wafer front defects can be prevented.
In the above embodiment, the washing step in step SP4 was performed with alkali and then with acid, but the present invention is not limited to this, and alkali washing may be performed after acid washing.
In the above embodiment, the cleaning step (alkali cleaning, acid cleaning) for the retainer ring 3 is performed before the running-in process in step SP5, but the present invention is not limited to this. For example, after the grinding process, a cleaning step (alkali cleaning, acid cleaning) may be performed with respect to the retainer ring 3, and then a polishing step may be performed with respect to the silicon wafer W.
In addition, both of the alkali washing and the acid washing are performed as the washing step of the retainer ring, but either one may be performed.
The method for polishing a silicon wafer according to the present invention will be further described based on examples. In this example, the following experiment was performed based on the foregoing embodiment.
In example 1, mirror polishing was performed on one surface of a silicon wafer having a diameter of 300mm according to the flow shown in fig. 3.
The material of the retaining ring 3 was glass epoxy, and the cleaning of the retaining ring was performed as an alkaline cleaning at SC1 (NH)4OH：1wt%、H2O2: 1wt% of the mixed solution) for 30 minutes, followed by rinsing with pure water. Further, as the acid washing, the acid washing was performed by immersing in HF (1 wt%) for 30 minutes, followed by rinsing with pure water.
The number of particles was measured on the front surface of the polished silicon wafer by a laser light scattering particle counter (Surfscan SP-3 manufactured by KLA-Tencor).
In comparative example 1, polishing treatment was performed on a silicon wafer having a diameter of 300mm without performing alkali cleaning or acid cleaning on the retainer ring. Other conditions were the same as in example 1.
The number of particles was measured on the front surface of the polished silicon wafer by a laser scattering particle counter in the same manner as in example 1.
The graph of fig. 4 shows the results of example 1 and comparative example 1.
In the graph of FIG. 4, the horizontal axis represents example 1 and comparative example 1, and the vertical axis represents 26nmLPD (counts/wf). In addition, 26nmLPD means the number of lpds (light Point defects) such as seeds and seeds having a particle size of 26nm or more on the front surface of the wafer.
The LPD includes defects of the wafer front surface due to metal impurities precipitated from the retainer ring, particles of deposits (dust) on the wafer front surface, and defects of pid (polishing Induced defect) due to polishing.
It is considered that comparative example 1 in which the conditions other than the washing of the retainer ring were the same as those of example 1 with respect to the particles of the attached matter (refuse) and the LPD number by PID was the same.
As can be seen from the graph of fig. 4, it can be confirmed that the number of particles (metal impurities) on the wafer is greatly reduced in example 1.
According to the present example, it was confirmed that it is possible to reduce defects in the surface layer of the wafer caused by metal impurities precipitated from the front surface and the surface layer portion of the retainer ring in the step of polishing the silicon wafer using the retainer ring.
Claims (9)
1. A method of polishing a silicon wafer, in which the silicon wafer is held by a holding ring at a polishing head and the front surface of the silicon wafer held by the polishing head is polished while being rotated by pushing the silicon wafer against a polishing cloth attached to a polishing table, characterized in that,
comprises a step of washing the holding ring with at least either an alkaline solution or an acidic solution,
And a step of polishing the silicon wafer after the step of cleaning the holding ring.
2. The method of grinding silicon wafers according to claim 1,
after the step of washing the retaining ring with at least either an alkaline solution or an acidic solution,
the method comprises a step of trial operation before the step of polishing the silicon wafer to perform a running-in process of fitting the polishing cloth and the polishing agent to the retainer ring.
3. The method of grinding a silicon wafer according to claim 1 or claim 2,
in the step of washing the retaining ring with at least either an alkaline solution or an acidic solution,
the alkaline solution used for washing the retaining ring is a chemical solution containing ammonia, sodium hydroxide, potassium hydroxide, or tetramethylammonium hydroxide.
4. The method of grinding a silicon wafer according to claim 1 or claim 2,
in the step of washing the retaining ring with at least either an alkaline solution or an acidic solution,
the acidic solution used for washing the retaining ring is a chemical solution containing hydrofluoric acid, sulfuric acid, hydrochloric acid, acetic acid, and nitric acid.
5. The method of grinding silicon wafers according to claim 3,
in the step of washing the retaining ring with at least either an alkaline solution or an acidic solution,
the acidic solution used for washing the retaining ring is a chemical solution containing hydrofluoric acid, sulfuric acid, hydrochloric acid, acetic acid, and nitric acid.
6. The method of grinding a silicon wafer according to claim 1 or claim 2,
the material of the retaining ring is any one of glass epoxy, polyether ether ketone, polyphenylene sulfide, polyethylene terephthalate, and polyimide, which is a polymer material resistant to the alkaline solution and the acidic solution.
7. The method of grinding silicon wafers according to claim 3,
the material of the retaining ring is any one of glass epoxy, polyether ether ketone, polyphenylene sulfide, polyethylene terephthalate, and polyimide, which is a polymer material resistant to the alkaline solution and the acidic solution.
8. The method of grinding silicon wafers according to claim 4,
the material of the retaining ring is any one of glass epoxy, polyether ether ketone, polyphenylene sulfide, polyethylene terephthalate, and polyimide, which is a polymer material resistant to the alkaline solution and the acidic solution.
9. The method of grinding silicon wafers according to claim 5,
the material of the retaining ring is any one of glass epoxy, polyether ether ketone, polyphenylene sulfide, polyethylene terephthalate, and polyimide, which is a polymer material resistant to the alkaline solution and the acidic solution.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-237844 | 2019-12-27 | ||
| JP2019237844A JP7349352B2 (en) | 2019-12-27 | 2019-12-27 | Silicon wafer polishing method |
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| Publication Number | Publication Date |
|---|---|
| CN113043159A true CN113043159A (en) | 2021-06-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202011551771.1A Pending CN113043159A (en) | 2019-12-27 | 2020-12-24 | Method for polishing silicon wafer |
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| CN (1) | CN113043159A (en) |
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| CN113927377A (en) * | 2021-10-21 | 2022-01-14 | 中环领先半导体材料有限公司 | Polishing process for improving surface roughness of silicon wafer |
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- 2019-12-27 JP JP2019237844A patent/JP7349352B2/en active Active
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| JP2009260142A (en) * | 2008-04-18 | 2009-11-05 | Panasonic Corp | Wafer-polishing apparatus and wafer-polishing method |
| CN105144350A (en) * | 2013-04-18 | 2015-12-09 | 信越半导体株式会社 | Method for polishing silicon wafer and method for producing epitaxial wafer |
| CN106514482A (en) * | 2016-11-09 | 2017-03-22 | 上海华力微电子有限公司 | Cleaning device and cleaning method for wafer chemical mechanical polishing retaining ring |
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| JP2021106239A (en) | 2021-07-26 |
| JP7349352B2 (en) | 2023-09-22 |
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