CN113927377A - Polishing process for improving surface roughness of silicon wafer - Google Patents
Polishing process for improving surface roughness of silicon wafer Download PDFInfo
- Publication number
- CN113927377A CN113927377A CN202111226360.XA CN202111226360A CN113927377A CN 113927377 A CN113927377 A CN 113927377A CN 202111226360 A CN202111226360 A CN 202111226360A CN 113927377 A CN113927377 A CN 113927377A
- Authority
- CN
- China
- Prior art keywords
- polishing
- machine
- surface roughness
- silicon wafer
- wax
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 20
- 239000010703 silicon Substances 0.000 title claims abstract description 20
- 230000003746 surface roughness Effects 0.000 title claims abstract description 19
- 238000007517 polishing process Methods 0.000 title claims abstract description 15
- 238000005498 polishing Methods 0.000 claims abstract description 69
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 8
- 230000008569 process Effects 0.000 claims abstract description 7
- 230000002159 abnormal effect Effects 0.000 claims abstract description 6
- 239000000498 cooling water Substances 0.000 claims abstract description 4
- 230000007547 defect Effects 0.000 claims abstract description 4
- 239000002245 particle Substances 0.000 claims abstract description 4
- 239000011164 primary particle Substances 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000010129 solution processing Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 11
- 238000011161 development Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002131 composite material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
Abstract
The invention relates to a polishing process for improving the surface roughness of a silicon wafer, S1, firstly selecting a crystal bar with the diameter of 200mm and no single crystal defect (COP-Free), checking the state of equipment before polishing, and carrying out process adjustment after ensuring no abnormal condition; s2, setting the rotation speed of the large disc, the rotation speed of the center guide wheel and the temperature of the ice polishing machine; s3, coarse polishing pad is FPK660C 2; the middle polishing pad is 7355-000 FE; the fine polishing pad is a 275NX flat pad; s4, ensuring the harmony of FFU setting and exhaust setting in the feeding wax pasting machine of the polishing machine, checking the working state of the electrostatic ion bar, and ensuring that the internal environment of the wax pasting machine reaches the primary particle standard; s5, calibrating the wax dropping amount; s6, calibrating the polishing solution processing flow and the cooling water flow; and S7, after polishing, pre-cleaning and feeding, cleaning the wax layer and the surface particles on the back of the product, and measuring the surface roughness of the product. The silicon wafer processed by the method has the advantage of low roughness.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a polishing process for improving the surface roughness of a silicon wafer.
Background
The importance of semiconductors is enormous and difficult to replace, both from a technological and economic point of view, and government support for industry is very strong. With the continuous progress of semiconductor manufacturing production lines, semiconductor manufacturing technologies and the rapid development of semiconductor terminal product markets in China, the continental semiconductor silicon wafer market in China is in a step-by-step leap development stage, 2016 to 2018, the sales of continental semiconductor single crystal silicon wafers in China is increased from 5.0 hundred million dollars to 9.92 hundred million dollars, and the annual average composite growth rate is as high as 41%. The prospect is estimated according to annual compound acceleration, the sales of semiconductor monocrystalline silicon wafers in China continental land in 2020 is about 19.8 hundred million dollars, the popularity of the semiconductor industry in China is continuously high, and a new round of development opportunity is met. With the transformation of economic development modes and the accelerated adjustment of industrial structures in China, the deep integration of industrialization and informatization and the vigorous promotion of local information consumption by governments, the market demand of Chinese semiconductors in the next seven years is estimated to continuously increase at a composite growth rate of 6% per year in 2025 years, the global share of the Chinese semiconductor market (1.67 million yuan or 2,380 million dollars) is increased from 50% in 2018 to 56% in 2025 years, and a 200mm wafer factory is still the main profit from the current global wafer factory capacity construction situation.
The silicon wafer processed by the existing silicon wafer polishing process has high roughness.
Disclosure of Invention
The invention aims to provide a polishing process for improving the surface roughness of a silicon wafer.
The invention realizes the purpose through the following technical scheme: a polishing process for improving the surface roughness of a silicon wafer comprises the following steps:
s1, firstly, selecting a crystal bar with the diameter of 200mm and no single crystal defect (COP-Free), checking the equipment state before polishing, and carrying out process adjustment after ensuring no abnormal condition;
s2, setting the rotation speed of the large disc, the rotation speed of the center guide wheel and the temperature of the ice polishing machine;
s3, setting a rough polishing pad of a polishing machine as FPK660C 2; the middle polishing pad of the polishing machine is 7355-000 FE; the fine polishing pad of the polishing machine is a 275NX flat pad;
s4, ensuring the harmony of FFU setting and exhaust setting in the feeding wax pasting machine of the polishing machine, checking the working state of the electrostatic ion bar, and ensuring that the internal environment of the wax pasting machine reaches the primary particle standard;
s5, calibrating the wax dropping amount;
s6, calibrating the processing flow and the cooling water flow of the polishing solution, and ensuring the removal rate and the polishing temperature of the product to be stable in the processing process;
and S7, after polishing, conveying the product to a pre-cleaning feeding machine by using a water transport vehicle, cleaning a wax layer and surface particles on the back of the product, and measuring the surface roughness of the product by using a roughness tester.
Further, the rotating speed of the large disc and the rotating speed of the center guide wheel are 1: 2.
further, the temperature of the polishing ice machine is set to be 30 ℃.
Further, the crude polishing solution in the S2 is NP6504, and the mixture ratio is 1: 15; the middle polishing solution is NP7000, and the mixture ratio is 1: 30, of a nitrogen-containing gas; the fine polishing solution is NP8000, and the proportion is 1: 30.
further, the amount of the dripping wax was 1.5 ml.
Compared with the prior art, the invention has the beneficial effects that: the processed silicon wafer has the advantage of low roughness.
Drawings
FIG. 1 shows raw data of roughness measurements after polishing with an old pad.
FIG. 2 shows the surface roughness of the polished surface of the product under a microscope after polishing with an old-fashioned precision polishing pad.
FIG. 3 is raw data from a roughness test after polishing using a 275NX precision polishing pad.
FIG. 4 shows the surface roughness of the polished surface of the product under a microscope after polishing with a 275NX precision polishing pad.
Detailed Description
The following describes in detail a specific embodiment of the polishing process for improving the surface roughness of a silicon wafer according to the present invention with reference to the accompanying drawings.
A polishing process for improving the surface roughness of a silicon wafer comprises the following steps:
s1, firstly, selecting a crystal bar with the diameter of 200mm and no single crystal defect (COP-Free), checking the equipment state before polishing, and carrying out process adjustment after ensuring no abnormal condition;
s2, setting the rotating speed of the large disc and the rotating speed of the center guide wheel to be 1: 2, setting the temperature of the ice polishing machine to be 30 ℃, and setting the coarse polishing solution to NP6504 according to the mixture ratio of 1: 15; the middle polishing solution is NP7000, and the mixture ratio is 1: 30, of a nitrogen-containing gas; the fine polishing solution is NP8000, and the proportion is 1: 30, the concentration of the liquid medicine and the temperature can determine the strength of the polishing capacity, so that the final polishing effect is influenced;
s3, replacing the rough polishing pad of the polishing machine with FPK660C2, wherein the hardness, compression rate and elasticity of the rough polishing pad can influence the polishing capability, and the polishing capability can influence the local flatness of a product; the middle polishing pad of the polishing machine is replaced by 7355-000FE, so that the damage layer of the polished surface after rough polishing can be optimized, and the local flatness of the product is further improved; the fine polishing pad of the polishing machine is replaced by a 275NX flat pad, so that the surface of the silicon wafer is ensured to be in a mirror surface state and has extremely high nanometer morphology characteristics;
s4, ensuring the harmony of FFU setting and air exhaust setting in the feeding wax pasting machine of the polishing machine, checking the working state of the electrostatic ion bar, ensuring that the internal environment of the wax pasting machine reaches the primary particle standard, and reducing the abnormity caused by the Dimple problem;
s5, calibrating the wax dropping amount, ensuring the wax dropping amount to be 1.5ml, and preventing the abnormal experiment result, the turnover of polishing equipment and the like caused by the abnormal wax dropping amount in the polishing process;
s6, calibrating the processing flow and the cooling water flow of the polishing solution, and ensuring the removal rate and the polishing temperature of the product to be stable in the processing process;
and S7, after polishing, conveying the product to a pre-cleaning feeding machine by using a water transport vehicle, cleaning a wax layer and surface particles on the back of the product, and measuring the surface roughness of the product by using a roughness tester.
The silicon wafer processed by the method has the advantage of low roughness.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and adjustments can be made without departing from the principle of the present invention, and these modifications and adjustments should also be regarded as the protection scope of the present invention.
Claims (5)
1. A polishing process for improving the surface roughness of a silicon wafer is characterized by comprising the following steps:
s1, firstly, selecting a crystal bar with the diameter of 200mm and no single crystal defect (COP-Free), checking the equipment state before polishing, and carrying out process adjustment after ensuring no abnormal condition;
s2, setting the rotation speed of the large disc, the rotation speed of the center guide wheel and the temperature of the ice polishing machine;
s3, setting a rough polishing pad of a polishing machine as FPK660C 2; the middle polishing pad of the polishing machine is 7355-000 FE; the fine polishing pad of the polishing machine is a 275NX flat pad;
s4, ensuring the harmony of FFU setting and exhaust setting in the feeding wax pasting machine of the polishing machine, checking the working state of the electrostatic ion bar, and ensuring that the internal environment of the wax pasting machine reaches the primary particle standard;
s5, calibrating the wax dropping amount;
s6, calibrating the processing flow and the cooling water flow of the polishing solution, and ensuring the removal rate and the polishing temperature of the product to be stable in the processing process;
and S7, after polishing, conveying the product to a pre-cleaning feeding machine by using a water transport vehicle, cleaning a wax layer and surface particles on the back of the product, and measuring the surface roughness of the product by using a roughness tester.
2. The polishing process for improving the surface roughness of the silicon wafer according to claim 1, wherein: the rotating speed of the large disc and the rotating speed of the central guide wheel are 1: 2.
3. the polishing process for improving the surface roughness of the silicon wafer according to claim 1, wherein: the polishing ice machine temperature was set to 30 ℃.
4. The polishing process for improving the surface roughness of the silicon wafer according to claim 1, wherein: the crude polishing solution in the S2 is NP6504, and the mixture ratio is 1: 15; the middle polishing solution is NP7000, and the mixture ratio is 1: 30, of a nitrogen-containing gas; the fine polishing solution is NP8000, and the proportion is 1: 30.
5. the polishing process for improving the surface roughness of the silicon wafer according to claim 1, wherein: the amount of dripping wax was 1.5 ml.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111226360.XA CN113927377A (en) | 2021-10-21 | 2021-10-21 | Polishing process for improving surface roughness of silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111226360.XA CN113927377A (en) | 2021-10-21 | 2021-10-21 | Polishing process for improving surface roughness of silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113927377A true CN113927377A (en) | 2022-01-14 |
Family
ID=79280816
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111226360.XA Pending CN113927377A (en) | 2021-10-21 | 2021-10-21 | Polishing process for improving surface roughness of silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113927377A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109500663A (en) * | 2019-01-08 | 2019-03-22 | 天津中环领先材料技术有限公司 | A kind of polishing process reducing by 8 inches of silicon polished surface roughnesses |
| CN110281082A (en) * | 2019-05-28 | 2019-09-27 | 天津中环领先材料技术有限公司 | A kind of polishing process of 8 inch silicon wafer of high-flatness |
| CN111230605A (en) * | 2020-02-17 | 2020-06-05 | 中环领先半导体材料有限公司 | Method for improving flatness of silicon polished wafer |
| CN111730418A (en) * | 2020-05-11 | 2020-10-02 | 中环领先半导体材料有限公司 | Single-side polishing process for large-diameter semiconductor silicon wafer |
| CN112975578A (en) * | 2019-12-12 | 2021-06-18 | 有研半导体材料有限公司 | Polishing method for improving surface roughness of silicon polished wafer |
| JP2021106239A (en) * | 2019-12-27 | 2021-07-26 | グローバルウェーハズ・ジャパン株式会社 | Polishing method for silicon wafer |
-
2021
- 2021-10-21 CN CN202111226360.XA patent/CN113927377A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109500663A (en) * | 2019-01-08 | 2019-03-22 | 天津中环领先材料技术有限公司 | A kind of polishing process reducing by 8 inches of silicon polished surface roughnesses |
| CN110281082A (en) * | 2019-05-28 | 2019-09-27 | 天津中环领先材料技术有限公司 | A kind of polishing process of 8 inch silicon wafer of high-flatness |
| CN112975578A (en) * | 2019-12-12 | 2021-06-18 | 有研半导体材料有限公司 | Polishing method for improving surface roughness of silicon polished wafer |
| JP2021106239A (en) * | 2019-12-27 | 2021-07-26 | グローバルウェーハズ・ジャパン株式会社 | Polishing method for silicon wafer |
| CN111230605A (en) * | 2020-02-17 | 2020-06-05 | 中环领先半导体材料有限公司 | Method for improving flatness of silicon polished wafer |
| CN111730418A (en) * | 2020-05-11 | 2020-10-02 | 中环领先半导体材料有限公司 | Single-side polishing process for large-diameter semiconductor silicon wafer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Pei et al. | Fine grinding of silicon wafers | |
| CN109545680B (en) | Rapid preparation method of high-flatness and low-damage monocrystalline silicon carbide substrate | |
| JP3098661B2 (en) | Abrasive composition and polishing method using the same | |
| CN108242396B (en) | Processing method for reducing surface roughness of silicon polished wafer | |
| CN1117203A (en) | Method of rough polishing semiconductor wafers to reduce surface roughness | |
| CN1424746A (en) | Silicon semiconductor crystal wafers and manufacturing method for multiple semiconductor crystal wafers | |
| CN110079862A (en) | Single-crystal silicon carbide substrate, silicon carbide epitaxy substrate and their manufacturing method | |
| US10347481B2 (en) | Silicon carbide wafer and method for production thereof | |
| CN112908834B (en) | Quick green environment-friendly double-side polishing method for silicon wafer substrate | |
| CN107936848B (en) | Polishing solution for polishing silicon substrate and preparation method thereof | |
| CN114231182A (en) | Easy-to-cleave gallium oxide wafer chemical mechanical polishing process, polishing solution and preparation method thereof | |
| CN105579548A (en) | Lapping slurry having a cationic surfactant | |
| CN114591684B (en) | Environment-friendly chemical mechanical polishing solution based on high-purity spherical silica sol, and preparation method and polishing method thereof | |
| MY145789A (en) | Method of manufacturing a perpendicular magnetic recording medium, a method of manufacturing a substrate for a perpendicular magnetic recording medium, and a medium and a substrate manufactured by the methods | |
| CN103681298A (en) | Machining method for high-yield monocrystalline silicon wafer for IGBT | |
| CN113927377A (en) | Polishing process for improving surface roughness of silicon wafer | |
| CN106914815A (en) | The Ginding process of semi-conductor silicon chip | |
| CN111316399A (en) | Method for manufacturing semiconductor wafer | |
| CN110919467B (en) | Wafer polishing method | |
| Yin et al. | Characteristic of SiC slurry in ultra precision lapping of sapphire substrates | |
| CN103021831A (en) | Processing method of monocrystalline silicon corrosion piece with long minority carrier service life | |
| WO2018014568A1 (en) | New process for copper polishing processing of sapphire wafer | |
| Yu et al. | Highest Quality and Repeatability for Single Wafer 150mm SiC CMP Designed for High Volume Manufacturing | |
| JP2013201176A (en) | Polishing slurry and method for manufacturing group 13 nitride substrate | |
| CN112951716A (en) | Method for improving flatness and roughness through mixed corrosion |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20220114 |
|
| RJ01 | Rejection of invention patent application after publication |