TW202413460A - 感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜、圖案形成方法、及電子器件之製造方法 - Google Patents

感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜、圖案形成方法、及電子器件之製造方法 Download PDF

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Publication number
TW202413460A
TW202413460A TW112132344A TW112132344A TW202413460A TW 202413460 A TW202413460 A TW 202413460A TW 112132344 A TW112132344 A TW 112132344A TW 112132344 A TW112132344 A TW 112132344A TW 202413460 A TW202413460 A TW 202413460A
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TW
Taiwan
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group
alkyl group
formula
acid
radiation
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TW112132344A
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English (en)
Chinese (zh)
Inventor
上農悠花
吉岡知昭
Original Assignee
日商富士軟片股份有限公司
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Publication of TW202413460A publication Critical patent/TW202413460A/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW112132344A 2022-08-31 2023-08-28 感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜、圖案形成方法、及電子器件之製造方法 TW202413460A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-138120 2022-08-31
JP2022138120 2022-08-31

Publications (1)

Publication Number Publication Date
TW202413460A true TW202413460A (zh) 2024-04-01

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ID=90099391

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Application Number Title Priority Date Filing Date
TW112132344A TW202413460A (zh) 2022-08-31 2023-08-28 感光化射線性或感放射線性樹脂組成物、感光化射線性或感放射線性膜、圖案形成方法、及電子器件之製造方法

Country Status (4)

Country Link
JP (1) JPWO2024048282A1 (https=)
KR (1) KR20250042818A (https=)
TW (1) TW202413460A (https=)
WO (1) WO2024048282A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3399141B2 (ja) 1995-03-07 2003-04-21 信越化学工業株式会社 化学増幅ポジ型レジスト材料
US8012672B2 (en) * 2006-10-04 2011-09-06 Basf Se Sulphonium salt photoinitiators
WO2021095356A1 (ja) 2019-11-12 2021-05-20 東洋合成工業株式会社 スルホニウム塩、酸発生剤、レジスト組成物、及びデバイスの製造方法

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Publication number Publication date
KR20250042818A (ko) 2025-03-27
JPWO2024048282A1 (https=) 2024-03-07
WO2024048282A1 (ja) 2024-03-07

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