TW202412088A - 用於乾式蝕刻的方法和系統 - Google Patents
用於乾式蝕刻的方法和系統 Download PDFInfo
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- TW202412088A TW202412088A TW112105387A TW112105387A TW202412088A TW 202412088 A TW202412088 A TW 202412088A TW 112105387 A TW112105387 A TW 112105387A TW 112105387 A TW112105387 A TW 112105387A TW 202412088 A TW202412088 A TW 202412088A
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- wafer
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
公開了用於乾式蝕刻的方法和系統。該系統包括具有中心開口的晶圓夾持環,通過該中心開口可以處理基底,和多個較小的外支撐孔用於接收來自柱塞組件的銷。外支撐孔是錐形的並且直徑會發生變化。錐形形狀減少了晶圓夾持環在操作使用期間上下移動時可能發生的晶圓夾持環的水平移動。減少的偏移增加了沿晶圓邊緣的晶圓產量。
Description
本發明是有關於一種用於乾式蝕刻的方法和系統。
積體電路形成在半導體晶圓上。微影圖案化製程使用紫外光將所需的罩幕圖案轉移到半導體晶圓上的光阻劑上。然後可以使用蝕刻製程將圖案轉移到光阻劑下方的層。該過程以不同的圖案重複多次,以在晶圓基底上構建不同的層並製成有用的裝置。等離子處理用於積體電路生產過程中的各種應用,例如清潔晶圓或蝕刻。
半導體晶圓基底可以非常薄,並且可能容易地翹曲或呈現非平面輪廓。這可能導致晶圓基底表面上不同晶圓上的層厚度不均勻。晶圓夾持環可用於壓平半導體晶圓基底並將其保持在適當位置。然而,在長時間使用後,由於各個部件之間的公差,晶圓夾持環可能會水平移動。這會導致晶圓基底邊緣上產生的晶圓出現蝕刻缺陷。
本發明實施例提供一種乾式刻蝕製程,包括:將晶圓基底放置在支撐基座上;相對於上電極移動所述支撐基座以減小所述支撐基座和所述上電極之間的間隙,使晶圓夾持組件接合所述晶圓基底的邊緣並沿所述晶圓基底的正面產生等離子體處理容積,以及沿所述晶圓基底的背面產生背面冷卻容積;以及通過在所述等離子體處理容積中產生等離子體來蝕刻所述晶圓基底,其中所述晶圓夾持組件包括多個柱塞組件和晶圓夾持環,其中所述晶圓夾持環包括圍繞中心開口的環形主體,所述環形主體包括延伸穿過所述環形主體的多個外支撐孔,其中每個所述外支撐孔為圓錐形或沙漏形。
本發明實施例提供一種晶圓夾持環,包括:主體,具有中心開口和延伸穿過所述主體的多個外支撐孔,其中每個所述外支撐孔具有直徑變化的錐形形狀。
本發明實施例提供一種乾式蝕刻系統,包括:支撐基座,包含下電極並支撐晶圓夾持環;以及上電極,位於所述支撐基座上方並與所述支撐基座隔開可變間隙高度,其中所述晶圓夾持環包括中心開口和多個外支撐孔,其中每個所述外支撐孔具有直徑變化的錐形形狀。
以下揭露內容提供用於實施本發明的不同特徵的諸多不同實施例或實例。以下闡述組件及佈置的具體實例以簡化本揭露。當然,該些僅為實例且不旨在進行限制。舉例而言,以下說明中將第一特徵形成於第二特徵之上或第二特徵上可包括其中第一特徵與第二特徵被形成為直接接觸的實施例,且亦可包括其中第一特徵與第二特徵之間可形成有附加特徵進而使得第一特徵與第二特徵可不直接接觸的實施例。另外,本揭露可能在各種實例中重複使用參考編號及/或字母。此種重複使用是出於簡潔及清晰的目的,而不是自身表示所論述的各種實施例及/或配置之間的關係。
此外,為易於說明,本文中可能使用例如「位於……之下(beneath)」、「位於……下方(below)」、「下部的(lower)」、「位於……上方(above)」、「上部的(upper)」及類似用語等空間相對性用語來闡述圖中所示的一個元件或特徵與另一(其他)元件或特徵的關係。所述空間相對性用語旨在除圖中所繪示的定向外亦囊括裝置在使用或操作中的不同定向。設備可具有其他定向(旋轉90度或處於其他定向),且本文中所使用的空間相對性闡述語可同樣相應地進行解釋。
本申請說明書和權利要求書中的數值應理解為包括當減少到相同數量的有效數字和數值時,與所述值的差異小於本申請中描述的類型的常規測量技術的實驗誤差以確定該值。本文公開的所有範圍都包括所述的端點。
術語“約”可用於包括任何可以變化而不改變該值的基本功能的數值。當與範圍一起使用時,“約”還公開了由兩個端點的絕對值定義的範圍,例如“約2到約4”也公開了“從2到4”的範圍。術語“約”可以指指定數字的正負10%。
術語“水平”和“垂直”用於指示相對於絕對參考的方向,即地平面。水平方向/平面的運動不會改變高度,而垂直方向的運動會改變高度。這些術語不應被解釋為要求結構彼此絕對平行或絕對垂直。例如,第一垂直結構和第二垂直結構不一定彼此平行。
本公開涉及用於例如通過等離子體處理進行乾式蝕刻的裝置和方法。等離子處理和等離子處理工具常用於積體電路製造製程。這些製造步驟和應用可包括晶圓基底的清潔、蝕刻製程和晶圓鍵合製程(例如熔合鍵合)。非常一般地,等離子體是通過在兩個電極之間的氣體中施加射頻(RF)電磁場來產生的。射頻場將氣體分子電離並剝離它們的電子,從而產生等離子體。離子轟擊晶圓基底,產生所需的功能。在使用電感耦合等離子體(inductively coupled plasma,ICP)或變壓器耦合等離子體(transformer-coupled plasma,TCP)的某些蝕刻器中,電極通過介電窗口與等離子體分離。與濕式蝕刻相比,乾式蝕刻的一些優點可以包括獲得異向性蝕刻的能力、減少材料浪費、改進的臨界尺寸(critical dimension,CD)控制、更清潔的表面以及減少金屬特徵的腐蝕。
本公開的乾式蝕刻系統使用晶圓夾持環將晶圓基底保持在適當位置並使其平整。將晶圓夾持環連接到組件的其餘部分的支撐孔被修改為包括錐形而不是圓柱形。這減少了可能發生的晶圓夾持環的水平移動。儘管具體參考乾式蝕刻系統進行了描述,但是本公開可應用於使用晶圓夾持環將基底保持在適當位置以用於任何應用(例如蝕刻、沉積等)的任何系統。
圖1和圖2是根據本公開的一些非限制性實施例的乾式蝕刻系統100的一個示例性的側截面示意圖。首先參考圖1,通常,系統100包括外殼102,外殼102包含反應室104。包含下電極120的晶圓支撐基座110位於外殼102底部附近。水平方向用附圖標記106表示,垂直方向用附圖標記108表示。
平台130位於外殼102頂部附近。上電極140存在於平台130內。平台的底部包括噴頭150,製程氣體通過噴頭150被引入反應室104。還存在用於供應適當製程氣體的氣體管線(未示出)。噴頭和/或氣體管線連接到用於提供指定氣體的氣體源(未示出)。
平台130(包含上電極140)和晶圓支撐基座110由可變間隙105隔開。平台和晶圓支撐基座也可以相對移動,從而可以增大和減小間隙的大小。例如,這可以通過使用螺釘、齒輪或其他常規機械結構上下移動平台,同時晶圓支撐基座保持固定在適當位置。如圖1所示,平台相對於晶圓支撐基座處於升高位置。如圖2所示,平台在外殼內向下移動到相對於晶圓支撐基座的降低位置。間隙105可高達約6.5公分。
電極用於提供能量以使氣體分子電離以產生等離子體。存在用於施加射頻功率的射頻(RF)產生器。下RF產生器122耦合到下電極120,上RF產生器142耦合到上電極140。上電極和下電極理想地與晶圓基底同心。
平台130可以由被配置為傳輸RF能量的材料製成,或者換句話說,圓頂通常對RF是透明的。這允許通過平台傳輸射頻感應場。因此,該平台理想地具有對RF感應場的低阻抗或具有足夠低的電場敏感性以以最小的功率損耗傳輸感應場。適合平台的組合物在射頻頻率上具有高透射率(即低損耗角正切)。如果RF透射率低,則能量可能會被不希望地吸收並轉化為過多的熱量。這種熱量可能會由於射頻能量的損失而降低等離子體生成過程,同時也會導致組件過熱和熱梯度的產生。該平台還抵抗等離子體的侵蝕。
在一些實施例中,平台130由陶瓷材料製成。可用於製造圓頂的陶瓷材料的非限制性示例包括矽、二氧化矽(SiO
2)、碳化矽、氧化鋁(Al
2O
3)、鍺、III-V族化合物半導體,例如砷化鎵和銦磷化物和II-II-V族化合物半導體,如碲化鎘汞。在一些具體實施例中,平台由二氧化矽(SiO
2)或氧化鋁(Al
2O
3)製成。
繼續參考圖1,晶圓支撐基座110存在於外殼內。基座被配置為將半導體晶圓基底180保持在期望位置。通常,晶圓基底可以具有任何合適的直徑,並且在特定實施例中可以具有從大約100mm到大約450mm的直徑。基座包括接觸晶圓基底的支撐表面112。支撐表面本身通常由電絕緣材料製成。
晶圓夾持組件190存在於晶圓支撐基座110上。晶圓夾持組件190包括晶圓夾持環200和將晶圓夾持環200連接到晶圓支撐基座110的多個柱塞組件230。
晶圓夾持環200包括主體210,在該剖視圖中,主體210分為兩部分。主體具有環形形狀,並圍繞中心開口202,晶圓180可通過該中心開口202進行等離子體處理。晶圓夾持環200的主體還包括多個外支撐孔220或開口。柱塞組件230穿過每個外支撐孔以將晶圓夾持環連接到晶圓支撐基座。
參考圖1,晶圓夾持環200和晶圓支撐基座110由靜止高度205分開。儘管靜止高度可以變化,但在一些特定實施例中,靜止高度為約1.1公分至約1.3公分。當沒有負載施加到晶圓夾持環200時達到該靜止高度。
聚焦環152也可以存在於晶圓支撐基座110上,圍繞晶圓支撐表面112。聚焦環旨在通過允許等離子體延伸超出晶圓周邊來提高晶圓邊緣或周邊周圍的蝕刻均勻性。聚焦環通常由絕緣材料(例如石英)製成,並且是定期更換的消耗部件。
也可存在一個或多個氣體出口以從反應室中去除不希望的氣體並降低反應室內的壓力。氣體出口可以連接到泵(未顯示)以產生真空。還可以存在一個或多個真空預載(Load-Lock)以進入反應室以插入和移除晶圓基底,這可以使用自動化材料處理系統(automated material handling system,AMHS)來完成。
控制器154可用於控制各種輸入和輸出,並測量外殼內用於等離子體處理過程的各種條件。該系統還可以包括用於監測適用參數的傳感器(未示出)。例如,這樣的傳感器可以包括用於跟踪各種氣體的流速、用於測量離開反應室的氣體的含量、用於測量反應室內的壓力、晶圓基底的溫度、任何入口氣體的溫度的傳感器等。控制器還可以確定是啟動還是停用系統、如何改變電極電壓、如何改變氣體混合物、氣體應以多快/多強的速度流入反應室,並還控制可能存在的任何自動材料處理系統的動作等。應注意的是,這些各種參數在操作期間可能不必保持穩定,並且可以通過控制器操作計算機程序來改變,該計算機程序適當地改變它們的設定點。控制器還可以包括用於與操作員通訊的使用者界面。如果需要,可以使用不同的控制器來控制等離子體產生室和等離子體處理室。
控制器可以在一個或多個通用計算機、專用計算機、編程的微處理器或微控制器和外圍積體電路元件、ASIC或其他積體電路、數字信號處理器、硬連線電子或邏輯電路等上實現作為分立元件電路,可編程邏輯裝置如PLD、PLA、FPGA、圖形卡CPU(GPU)或PAL等。這樣的設備通常至少包括用於存儲控制程序的存儲器(例如RAM、ROM、EPROM)和用於實現控制程序的處理器。
可以使用本領域已知的材料和製程來製造乾式蝕刻系統的各種部件。合適材料的示例性可以包括金屬、塑料等。也可以使用常見的增強材料。例如,反應室內的各種表面可以包括保護塗層。
參考圖2,如此處所示,平台130向下移動並且向下推在晶圓夾持環200上。因此,晶圓夾持環200接合晶圓基底180。
在等離子處理期間,晶圓基底會升溫。背面冷卻系統160可以存在於晶圓支撐基座內。背面冷卻系統向晶圓基底的背面提供冷卻流體以將熱量從晶圓基底傳遞出去。在這點上,晶圓夾持組件190也可以被描述為將反應室104分成等離子體處理容積170和背面冷卻容積172。等離子體處理容積170沿著晶圓基底的正面182存在於晶圓夾持組件190和上電極140之間。背面冷卻容積172沿著晶圓基底的背面存在於晶圓夾持組件190和晶圓支撐基座110之間。
接著,冷卻流體可以是液體或氣體,但通常是氣體,例如氦氣(He
2)。如圖所示,背面冷卻系統包括穿過基座的入口162和出口164。冷卻流體通過入口流入晶圓基底和下電極之間的區域再到出口,從而將熱量帶走。例如,晶圓支撐表面可以包括冷卻流體流過的凹槽(未示出)。或者,冷卻流體/氣體可以從基座的中心徑向向外流動並沿晶圓的周邊排出,其中氣體通過圍繞基座的出口排出。晶圓夾持環可以幫助確保任何從冷卻系統逸出的冷卻流體不會不利地影響在等離子體處理容積170中發生的等離子體處理過程。晶圓夾持環壓在晶圓基底的周邊,減少冷卻液的損失,從而提高冷卻效果。
圖3是晶圓夾持環200的立體圖。夾持環可被描述為圍繞將晶圓暴露於等離子體的中心開口202的環形主體210。主體210包括多個外支撐孔220,外支撐孔220從主體的下表面(不可見)完全穿過主體延伸至主體的上表面212。如圖所示,三個外部支撐孔220是可見的,它們通常圍繞主體的圓周均勻分佈。主體包括靠近中心開口202的內周邊216和圍繞環形主體外側的外周邊218。
在一些實施例中,晶圓夾持環200可以由陽極氧化鋁製成。陽極氧化是一種電化學過程,可將鋁表面轉化為耐用、耐腐蝕的陽極氧化飾面。在其他實施例中,晶圓夾持環200由陶瓷材料製成。陶瓷材料的非限制性示例包括氧化鋁(Al
2O
3)、碳化物、氧化物、矽化物、硼化物和氮化物。其他材料也在本公開的範圍內。
圖4是示出當夾持在晶圓基底180上時晶圓夾持環200的內周邊216的局部側剖視圖。通常,晶圓夾持環的內周邊與晶圓基底的上表面的外周邊接觸,並對晶圓施加向下的力。因此,環形主體的下表面214沿晶圓的周邊接合晶圓基底180的上表面186。晶圓夾持環200的下表面214還可以包括錐形圓柱壁219,其從環形主體垂直突出並接合晶圓基底的周邊。當存在時,圓柱壁旨在將晶圓基底匯集到與晶圓夾持環和晶圓支撐基座更接近的水平或橫向對準。
圖5是柱塞組件230和晶圓夾持環200的放大剖視圖。首先參考柱塞組件230,柱塞組件230包括活塞軸232、壓縮彈簧236、柱塞240和蓋體238。
最初,活塞軸232可以被描述為形成圓柱形側壁的管。管子的下端是封閉的,管子的上端是圓形壁,其中心有開口,柱塞240穿過該開口。圓形壁的其餘部分用作停止表面234。
柱塞240由具有上端244和下端246的主體242形成。銷(pin)248存在於柱塞主體的上端,並且是柱塞穿過晶圓夾持環的外支撐孔的部分。銷的直徑小於主體。柱塞主體的下端包括蓋部249,蓋部249位於活塞軸232內並接合停止表面234。
壓縮彈簧236位於活塞軸內,並且被偏壓抵靠活塞軸232的下封閉端和柱塞240的下端。無負載時壓縮彈簧較長,有負載時壓縮彈簧變短。壓縮彈簧將柱塞240向上偏置並遠離晶圓支撐基座和晶圓基底。彈簧在柱塞240被推入活塞軸232時壓縮,並且在負載移除時膨脹。
蓋體238接合柱塞的銷248,並將晶圓夾持環200固定到柱塞組件。
柱塞組件的各種部件由合適的材料製成。例如,彈簧通常由金屬材料製成。活塞軸、柱塞和蓋體通常由合適的塑料材料製成。
現在參考晶圓夾持環200,在主體210中示出了外部支撐孔220。外支撐孔220從其下表面214到其上表面212完全延伸穿過主體。外支撐孔從下表面到上表面向內逐漸變細。結果,外支撐孔的頂部直徑222(即上表面處)小於外支撐孔的底部直徑224(即下表面處)。底部直徑224可以在銷248的每一側提供大約1.25mm或大約0.625mm的公差。但是,頂部直徑的公差較低。在一些實施例中,頂部直徑為約5 mm。如此處所示,外支撐孔具有圓錐形狀或直線錐形。然而,應當理解,也可以考慮其他形狀。例如,外支撐孔可以具有彎曲的錐度。在柱塞組件和晶圓夾持環之間只有一個或兩個接觸點增加了晶圓夾持環的穩定性。
單獨的柱塞組件230與晶圓夾持環的每個外部支撐孔相關聯。外部支撐孔和銷的互補性質被認為限制了晶圓夾持環200在xy平面中(即,水平地)的移動。外支撐孔的圓錐形減小了整個外支撐孔的公差,這有利地減少了晶圓夾持環可能發生的水平移動量。因此,這消除或減少了晶圓夾持環200在蝕刻製程期間從晶圓水平偏移的可能性,這可能導致沿著晶圓邊緣的不期望的影響,例如晶圓邊緣的部分未被均勻蝕刻。
本發明的晶圓夾持環200可用於任何蝕刻製程,包括反應離子蝕刻(reactive ion etching,RIE)、電感耦合等離子體(inductively coupled plasma,ICP)蝕刻、CCP蝕刻、濺射蝕刻或其中兩種或更多種的任何組合。
圖6是根據本公開的一些實施例的乾式蝕刻系統100的俯視圖。系統100包括在基座110上方用於支撐晶圓(未示出)的晶圓夾持環200。三個柱塞組件的柱塞蓋體238在延伸穿過晶圓夾持環的外部支撐孔處可見。基座110通過晶圓夾持環200中更大的中心開口可見。應注意,雖然所描繪的系統使用三個柱塞組件,但原則上,與晶圓夾持環一起使用的柱塞組件的數量可以從兩個變化到所需的數量。例如,可以使用兩個到二十個之間的柱塞組件。柱塞組件可以圍繞晶圓夾持環均勻分佈,或者可以不規則分佈。
圖7是說明根據本公開的一些實施例的用於乾式蝕刻的製程的非限制性實施例的流程圖。可以參考圖1和圖2討論該過程的各個步驟。
首先,該製程可以從圖1所示配置中的乾式蝕刻系統開始。包含上電極140的平台130被抬離支撐座110,並且間隙105很大。
在步驟705中,將晶圓基底180放置在晶圓支撐基座上。這可以使用例如AMHS的機械臂將晶圓基底通過真空預載(未示出)插入反應室並將晶圓基底放置在支撐基座上來完成。晶圓基底本身可以是由任何半導體材料製成的晶圓。這樣的材料可以包括矽,例如以晶體矽或多晶矽的形式。在替代實施例中,基底可以由諸如鍺的其他元素半導體製成,或者可以包括諸如碳化矽(SiC)、砷化鎵(GaAs)、砷化銦(InAs)和磷化銦(InP)的化合物半導體。
接下來,在步驟710中,相對於晶圓支撐基座110移動平台130/上電極140以減小間隙105。該移動導致平台130推動晶圓夾持組件190/晶圓夾持環200以接合晶圓基底的邊緣(即周邊)。如圖2所示,這產生了等離子體處理容積170和背面冷卻容積172。
然後在步驟715中,在等離子體處理容積170中產生等離子體以蝕刻晶圓基底180。RF產生器提供的電壓被施加在上電極140和下電極120之間以點燃和維持等離子體。該頻率通常以13.56MHz運行,但也可以使用其他頻率,例如2MHz或60MHz,具體取決於應用。用於產生等離子體的功率範圍可以從大約10瓦(W)到大約2,000W。一旦被點燃,等離子體可以由與時變磁場相關的電磁感應產生的電流維持,或者可以自我維持。
在一些特定實施例中,等離子體蝕刻處理在真空環境中進行,例如外殼內的壓力為約0.1帕斯卡(Pa)至約100Pa。然而,壓力可以更高並且可以簡單地低於大氣壓,例如約10kPa至約95kPa的壓力(為了比較,大氣壓為約101kPa)。晶圓基底上方的等離子體處理容積中的溫度可以是任何值,並且在特定實施例中,在約70℃至約80℃的範圍內。
取決於應用,等離子體中的製程氣體可以包括氬氣(Ar)、四氟化碳(CF
4)、氟仿(CHF
3)、氮氣(N
2)和/或氧氣(O
2)。各種蝕刻製程可以包括對多晶矽具有高選擇性的接觸氧化物蝕刻;異向性通孔蝕刻製程;蝕刻氧化物間隔體的製程;光阻劑/氧化物回蝕平面化蝕刻;錐形接觸蝕刻;軟蝕刻;異向性電介質蝕刻;或氮化矽蝕刻。在蝕刻期間,如步驟720所示,可以通過使冷卻流體流過背面冷卻容積來冷卻晶圓。
在步驟725中,蝕刻完成後,平台130/上電極140被抬離或與支撐基座110分離。間隙105因此增加。該移動導致晶圓夾持組件190/晶圓夾持環200從晶圓基底180的邊緣(即周邊)脫離。在步驟730中,然後存在於支撐基座中的加載銷可以升高以將晶圓基底提升到晶圓支撐表面之上並且消散可能存在於晶圓基底上的任何殘餘電荷。然後自動搬運工具(未顯示)可以抓住晶圓基底以運輸到隨後的處理工具以進行額外的處理。這樣的處理可以包括進一步的蝕刻、沉積、測試等。
乾式蝕刻系統或工具可用於例如在層中形成溝槽和/或通孔,並且是用於獲得高縱橫比(即主要是垂直壁)的高度異向性製程。例如,對於乾式蝕刻,圖案化的光阻劑層存在於晶圓基底上的金屬層之上。然後使用乾式蝕刻工具從晶圓基底蝕刻暴露的金屬。
圖8是根據本公開的一些實施例的用於減少乾式蝕刻系統中的晶圓夾持環的水平偏移的過程800的非限制性實施例的流程圖。在步驟805中,現有的晶圓夾持環與晶圓夾持組件的柱塞組件分離。在步驟810中,將新的晶圓夾持環固定到柱塞組件。如前所述,新的晶圓夾持環包括具有錐形形狀的外部支撐孔。這種結構減少了可能發生的水平偏移量,並導致改進了操作的翻新乾式蝕刻系統。
圖9是根據本發明的乾式蝕刻系統的第二實施例。該實施例不同於圖1的實施例。與圖1的不同之處在於晶圓夾持組件190附接到平台130,而不是附接到晶圓支撐基座110。柱塞組件230從平台向下延伸。晶圓夾持環200被定向為使得其下表面214仍然接觸晶圓基底180。值得注意的是,外支撐孔的錐形形狀仍然減少了水平偏移。在操作中,當平台130下降時,晶圓夾持環200被向下推抵晶圓支撐座110,從而夾持晶圓基底180。
因此,在本公開中設想了晶圓夾持環中的外支撐孔的形狀的多種變化。通常,外支撐孔的直徑會發生變化,而不是保持不變。一些變化在圖1和圖2中示出。請參考圖10A-10C,其為晶圓夾持環200的放大剖視圖。在所有三幅圖中,都包括柱塞的銷248以供參考。還應注意,在所有三幅圖中,下表面214都接觸晶圓基底。
首先參考如圖10A所示的實施例,晶圓夾持環200的外支撐孔220從下表面214朝向上表面212逐漸變細。結果,外支撐孔沿上表面212的頂部直徑222小於外支撐孔沿晶圓夾持環200的下表面214的底部直徑224。當晶圓夾持組件存在於晶圓支撐基座上時,該實施例尤其適用,如圖1和圖5所示。
接下來參考如圖10B所示的實施例,晶圓夾持環200的外支撐孔220從上表面212朝向下表面214逐漸變細。換言之,外支撐孔的頂部直徑222大於外支撐孔的底部直徑224。本實施例尤其適用於晶圓夾持組件安裝於平台並向下懸垂時,如圖9所示。
接下來參考如圖10C所示的實施例,晶圓夾持環200的外支撐孔220從上表面212和下表面214都朝著孔的中間逐漸變細,到達靠近中間的一點。
在本實施例中,外支撐孔的頂部直徑222大約等於外支撐孔的底部直徑224。頂部直徑222和底部直徑224均大於外支撐孔的中間直徑226。外支撐孔的這個實施例也可以被描述為具有沙漏形狀。再次,示出了線性錐形,但是錐形通常可以是任何形狀,例如彎曲的。該實施例可適用於圖1或圖9所示的任一晶圓夾持組件。
本公開的乾式蝕刻系統使用改進的晶圓夾持環,其具有錐形的外部支撐孔。換句話說,外支撐孔的直徑不是恆定的,而是在最大直徑和最小直徑之間變化。與圓柱形孔相比,這種結構具有減小的公差。圖5的晶圓夾持環結構減少了外部支撐孔頂部的公差,將可能發生的水平偏移量減少到可接受的量。類似地,圖10A-10C中所示的結構,由於上表面和下表面之間的孔的直徑的變化,還具有減小的水平偏移公差。在一些特定實施例中,可能的偏移水平降低到低於約0.35mm。因此,減少了蝕刻缺陷(被蝕刻的部分不應被蝕刻,反之亦然)。
本公開的一些實施例涉及一種乾式刻蝕製程,包括:將晶圓基底放置在支撐基座上;相對於上電極移動所述支撐基座以減小所述支撐基座和所述上電極之間的間隙,使晶圓夾持組件接合所述晶圓基底的邊緣並沿所述晶圓基底的正面產生等離子體處理容積,以及沿所述晶圓基底的背面產生背面冷卻容積;以及通過在所述等離子體處理容積中產生等離子體來蝕刻所述晶圓基底,其中所述晶圓夾持組件包括多個柱塞組件和晶圓夾持環,其中所述晶圓夾持環包括圍繞中心開口的環形主體,所述環形主體包括延伸穿過所述環形主體的多個外支撐孔,其中每個所述外支撐孔為圓錐形或沙漏形。
在一些實施例中,所述晶圓夾持環的所述環形主體包括陽極氧化鋁或陶瓷材料。
在一些實施例中,所述晶圓夾持組件與所述支撐基座連接,且每個所述外支撐孔具有向所述環形主體的上表面逐漸變細的錐形形狀。
在一些實施例中,所述上電極和所述晶圓夾持組件連接到所述支撐基座上方的平台。
在一些實施例中,每個所述柱塞組件包括活塞軸、位於所述活塞軸內的壓縮彈簧、穿過所述晶圓夾持環的所述外支撐孔的柱塞、以及用於將所述柱塞固定在所述外支撐孔內的蓋體。
在一些實施例中,所述柱塞包括主體,所述主體具有在其上端的銷和在其下端的蓋部,所述銷適於穿過所述晶圓夾持環的所述外支撐孔,並且所述蓋部適於接合所述活塞軸的停止表面。
在一些實施例中,所述晶圓夾持組件共有三個柱塞組件,所述晶圓夾持環具有三個所述外支撐孔。
在一些實施例中,更包括通過使冷卻流體流過所述背面冷卻容積來冷卻所述晶圓基底。
在一些實施例中,所述冷卻流體是液體或氣體。
在一些實施例中,所述冷卻流體是氦氣。
在一些實施例中,所述支撐基座與所述上電極之間的間隙為約1.1cm至約1.3cm。
在一些實施例中,進一步包括:蝕刻完成後,將所述上電極與所述支撐基座分離;以及將所述晶圓基底從所述支撐基座上抬起。
還公開了用於減少乾式蝕刻系統中晶圓夾持環的水平偏移的各種製程。晶圓夾持環固定到多個柱塞組件。晶圓夾持環包括:主體,具有中心開口和延伸穿過所述主體的多個外支撐孔,其中每個所述外支撐孔具有直徑變化的錐形形狀。每個柱塞組件包括穿過晶圓夾持環的外支撐孔的銷。
在一些實施例中,所述錐形為圓錐形或沙漏形。
在一些實施例中,所述主體包括陽極氧化鋁或陶瓷材料。
在一些實施例中,所述外支撐孔圍繞所述主體的圓周均勻地間隔開。
在一些實施例中,所述晶圓夾持環的下表面包括從所述主體垂直突出的錐形圓柱形壁,用於接合所述晶圓基底的周邊。
本文還公開了包括支撐基座、上電極和晶圓夾持環的乾式蝕刻系統。支撐基座包含下電極並支撐晶圓夾持環。上電極位於支撐基座上方並與支撐基座隔開可變間隙高度。晶圓夾持環包括中心開口和多個外支撐孔。每個外部支撐孔都具有直徑變化的錐形。
在一些實施例中,更包括多個柱塞組件,其中每個所述柱塞組件包括穿過多個所述外支撐孔中的銷。
在一些實施例中,所述晶圓夾持環包括陽極氧化鋁或陶瓷材料。
根據本公開的又一個非限制性方面,提供了一種晶圓夾持環。晶圓夾持環包括中心開口和多個外開口或外支撐孔。每個外支撐孔具有錐形形狀,其直徑在最大直徑和最小直徑之間變化。
以上概述了若干實施例的特徵,以使熟習此項技術者可更佳地理解本揭露的各態樣。熟習此項技術者應理解,他們可容易地使用本揭露作為設計或修改其他製程及結構的基礎來施行與本文中所介紹的實施例相同的目的及/或達成與本文中所介紹的實施例相同的優點。熟習此項技術者亦應認識到,此種等效構造並不背離本揭露的精神及範圍,而且他們可在不背離本揭露的精神及範圍的條件下對其作出各種改變、代替及變更。
100:系統
102:殼體
104:反應腔室
105:間隙
106、108:附圖標記
110:晶圓支撐基座
112:支撐表面
120:下電極
122:下射頻產生器
130:平台
140:上電極
142:上射頻產生器
150:噴頭
152:聚焦環
154:控制器
160:背面冷卻系統
162:入口
164:出口
170:等離子體處理容積
172:背面冷卻容積
180:晶圓基底
182:前側
186、212:上表面
190:晶圓夾持組件
200:晶圓夾持環
202:中心開口
205:靜止高度
210、242:主體
214:下表面
216:內周邊
218:外周邊
219:錐形圓柱壁
220:外支撐孔
222:頂部直徑
224:底部直徑
226:中間直徑
230:柱塞組件
232:活塞軸
234:停止表面
236:壓縮彈簧
238:蓋體
240:柱塞
244:上端
246:下端
248:銷
249:蓋部
705、710、715、720、725、730、805、810:步驟
800:製程
結合附圖閱讀以下詳細說明,會最佳地理解本揭露的各個態樣。應注意,根據本行業中的標準慣例,各種特徵並非按比例繪製。事實上,為使論述清晰起見,可任意增大或減小各種特徵的尺寸。
圖1是根據本公開的一些實施例的適用於乾式蝕刻的示例性等離子體處理系統的截面示意圖。上電極處於升高位置。
圖2是圖1的示例性等離子體處理系統的橫截面示意圖。如圖1所示,上電極處於降低位置。
圖3是根據一些實施例的晶圓夾持環的透視圖。
圖4是示出當夾持在晶圓基底上時晶圓夾持環的內周邊的局部側剖視圖。
圖5是根據一些實施例的與晶圓夾持環接合的柱塞組件的放大剖視圖。
圖6是根據本公開的一些實施例的示例性乾式蝕刻系統的俯視圖。
圖7是說明根據一些實施例的用於乾式蝕刻的製程的流程圖。
圖8是說明根據一些實施例的用於在乾式蝕刻系統中減少晶圓夾持環的水平偏移的過程的流程圖。
圖9是根據本發明的乾式蝕刻系統的第二實施例。此實施例,晶圓夾持組件附接到上平台,而不是下晶圓支撐基座。
圖10A-10C是放大的截面圖,顯示了晶圓夾持環的外支撐孔形狀的變化。
100:系統
102:殼體
104:反應腔室
105:間隙
106、108:附圖標記
110:晶圓支撐基座
112:支撐表面
120:下電極
122:下射頻產生器
130:平台
140:上電極
142:上射頻產生器
150:噴頭
152:聚焦環
154:控制器
160:背面冷卻系統
162:入口
164:出口
180:晶圓基底
190:晶圓夾持組件
200:晶圓夾持環
202:中心開口
205:靜止高度
210:主體
220:外支撐孔
230:柱塞組件
Claims (1)
- 一種乾式刻蝕製程,包括: 將晶圓基底放置在支撐基座上; 相對於上電極移動所述支撐基座以減小所述支撐基座和所述上電極之間的間隙,使晶圓夾持組件接合所述晶圓基底的邊緣並沿所述晶圓基底的正面產生等離子體處理容積,以及沿所述晶圓基底的背面產生背面冷卻容積;以及 通過在所述等離子體處理容積中產生等離子體來蝕刻所述晶圓基底, 其中所述晶圓夾持組件包括多個柱塞組件和晶圓夾持環, 其中所述晶圓夾持環包括圍繞中心開口的環形主體,所述環形主體包括延伸穿過所述環形主體的多個外支撐孔, 其中每個所述外支撐孔為圓錐形或沙漏形。
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US17/899,821 US20240071803A1 (en) | 2022-08-31 | 2022-08-31 | Methods and systems for dry etching |
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TW (1) | TW202412088A (zh) |
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