TW202403225A - Fluorescent body device and light source module - Google Patents

Fluorescent body device and light source module Download PDF

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TW202403225A
TW202403225A TW112119673A TW112119673A TW202403225A TW 202403225 A TW202403225 A TW 202403225A TW 112119673 A TW112119673 A TW 112119673A TW 112119673 A TW112119673 A TW 112119673A TW 202403225 A TW202403225 A TW 202403225A
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light
phosphor
fluorescent
samples
chromaticity
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阿部岳志
森俊雄
中島功康
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日商松下知識產權經營股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V11/00Screens not covered by groups F21V1/00, F21V3/00, F21V7/00 or F21V9/00
    • F21V11/08Screens not covered by groups F21V1/00, F21V3/00, F21V7/00 or F21V9/00 using diaphragms containing one or more apertures
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/20Dichroic filters, i.e. devices operating on the principle of wave interference to pass specific ranges of wavelengths while cancelling others
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30Elements containing photoluminescent material distinct from or spaced from the light source
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30Elements containing photoluminescent material distinct from or spaced from the light source
    • F21V9/32Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/30Semiconductor lasers

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  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)

Abstract

A fluorescent body device (1) comprises: a substrate member (10); and a wavelength conversion member (20) provided on the substrate member (10) and having a fluorescent section (21) and a light reflection section (22). The fluorescent section (21) has a light input surface (211) and a light output surface (212). The light reflection section (22) is provided so as to surround the fluorescent section (21) when observed from the direction of the light output surface (212). The main component of the fluorescent section (21) is a YAG fluorescent ceramic containing Ce3+. The main component of the light reflection section (22) is a light reflective ceramic. The Ce3+ concentration of the YAG fluorescent ceramic is 0.005-0.02%, and the thickness of the YAG fluorescent ceramic is 350-820 [mu]m.

Description

螢光體元件及光源模組Phosphor components and light source modules

本發明係關於一種螢光體元件及光源模組。The invention relates to a phosphor element and a light source module.

於投影機、內視鏡、車載前照燈、照明裝置或液晶顯示裝置等,使用將LED(Light Emitting Diode,發光二極體)或半導體雷射等固體發光元件作為光源之光源模組。此類光源模組,例如具備光源、及將光源所發出的光作為激發光而發出螢光之螢光體元件。此一情況,對於使用在投影機或內視鏡等用途之光源模組要求高亮度,故使用半導體雷射作為光源。Light source modules that use solid light-emitting elements such as LEDs (Light Emitting Diodes) or semiconductor lasers as light sources are used in projectors, endoscopes, vehicle headlights, lighting devices, or liquid crystal display devices. This type of light source module includes, for example, a light source and a phosphor element that uses the light emitted by the light source as excitation light to emit fluorescent light. In this case, light source modules used in projectors, endoscopes, etc. require high brightness, so semiconductor lasers are used as light sources.

作為此類螢光體元件,於專利文獻1揭露一種光學零件,具備透光構件、及配置於透光構件之上方的具有螢光部與光反射部之波長轉換構件。 [習知技術文獻] [專利文獻] As such a phosphor element, Patent Document 1 discloses an optical component including a light-transmitting member and a wavelength conversion member having a fluorescent part and a light-reflecting part arranged above the light-transmitting member. [Known technical documents] [Patent Document]

專利文獻1:日本特開2019-53130號公報Patent Document 1: Japanese Patent Application Publication No. 2019-53130

[本發明所欲解決的問題][Problems to be solved by this invention]

而在螢光體元件中,藉由將激發光照射至螢光部而從螢光部生成既定色彩的光,發出混合有此等激發光及生成的光之輸出光。依用途的不同,而有要求輸出光之色度收斂在既定範圍內之情況。進一步,於特定用途中,有要求使輸出光之色度的角度依存性小之情況。On the other hand, in the phosphor element, light of a predetermined color is generated from the fluorescent part by irradiating the excitation light to the fluorescent part, and output light mixed with the excitation light and the generated light is emitted. Depending on the application, the chromaticity of the output light may be required to converge within a predetermined range. Furthermore, in certain applications, there are cases where it is required to make the angular dependence of the chromaticity of the output light small.

鑒於此等問題,本發明的目的在於提供輸出光之色度的角度依存性小之螢光體元件等。 [解決問題之技術手段] In view of these problems, an object of the present invention is to provide a phosphor element and the like in which the chromaticity of output light has small angle dependence. [Technical means to solve problems]

為了達成上述目的,本發明之螢光體元件的一態樣,包含:基板構件;以及波長轉換構件,具備螢光部及光反射部,設置於該基板構件;該螢光部,具有光入射面及光出射面;從該光出射面之方向觀察時,該光反射部,設置於該螢光部的周圍;該螢光部之主成分,包含Ce 3+的YAG螢光體陶瓷;該光反射部之主成分為光反射性陶瓷;該YAG螢光體陶瓷之Ce 3+濃度為0.005%以上0.02%以下;該YAG螢光體陶瓷之厚度為350μm以上820μm以下。 In order to achieve the above object, an aspect of the phosphor element of the present invention includes: a substrate member; and a wavelength conversion member having a fluorescent part and a light reflecting part, which are provided on the substrate member; the fluorescent part has a light incident surface and the light exit surface; when viewed from the direction of the light exit surface, the light reflection part is arranged around the phosphor part; the main component of the phosphor part is YAG phosphor ceramic containing Ce 3+ ; the The main component of the light reflective part is light reflective ceramic; the Ce 3+ concentration of the YAG phosphor ceramic is 0.005% or more and 0.02% or less; the thickness of the YAG phosphor ceramic is 350 μm or more and 820 μm or less.

此外,為了達成上述目的,本發明之光源模組的一態樣,具備上述記載之螢光體元件。 [本發明之效果] In order to achieve the above object, one aspect of the light source module of the present invention includes the phosphor element described above. [Effects of the present invention]

依本發明,則可提供輸出光之色度的角度依存性小之螢光體元件等。According to the present invention, it is possible to provide a phosphor element, etc., in which the chromaticity of the output light has small angle dependence.

另,以下說明的實施形態,皆顯示概括性案例或具體案例。下述實施形態所示之數值、形狀、材料、構成要素、構成要素的配置位置與連接形態、步驟、步驟的順序等僅為一例,其主旨不在於限定本發明。此外,關於下述實施形態之構成要素中的並未記載於獨立請求項之構成要素,將其視為任意構成要素而說明。In addition, the implementation forms described below all show general cases or specific cases. The numerical values, shapes, materials, structural elements, arrangement positions and connection forms of the structural elements, steps, the order of the steps, etc. shown in the following embodiments are only examples and are not intended to limit the present invention. In addition, among the components of the following embodiments, components that are not described in the independent claims will be described as arbitrary components.

此外,各圖式僅為示意圖,並非為嚴格定義之圖式。另,於各圖中,對於實質上相同的構成給予相同符號,將重複的說明省略或簡化。此外,於本說明書中,線膨脹率與線膨脹係數為相同涵義。In addition, each diagram is a schematic diagram only and is not a strictly defined diagram. In addition, in each drawing, substantially the same structure is given the same reference numeral, and repeated description is omitted or simplified. In addition, in this specification, linear expansion rate and linear expansion coefficient have the same meaning.

此外,於本說明書中,矩形或圓形等表示要素的形狀之用語、及數值範圍,並非為僅表示嚴格定義的表現,而係指實質上同等之範圍,例如亦包含數%程度之差異的表現。In addition, in this specification, terms indicating the shape of elements, such as rectangle or circle, and numerical ranges do not merely indicate strictly defined expressions, but refer to substantially equivalent ranges, including, for example, differences of a few %. Performance.

此外,本說明書中,「上方」及「下方」等用語,並非指絕對的空間認知之上方(鉛直上方)及下方(鉛直下方),而係作為藉由疊層構成中的以疊層順序為準之相對的位置關係定義之用語而使用。此外,「上方」及「下方」等用語,不僅「2個構成要素彼此隔著間隔配置,在2個構成要素之間存在其他構成要素」的情況,亦適用於「2個構成要素彼此密接配置,2個構成要素接觸」的情況。In addition, in this specification, terms such as "upper" and "lower" do not refer to the absolute upper (vertical upper) and lower (vertical lower) spatial cognition, but refer to the order of stacking in a stacked structure. Use terms that accurately define relative positional relationships. In addition, terms such as "above" and "below" are applicable not only to the case where "two components are arranged with a gap from each other, and there are other components between the two components", but also when "the two components are arranged closely to each other" , two constituent elements are in contact".

(實施形態) [構成] 首先,利用圖1,針對實施形態之螢光體元件1的構成予以說明。圖1係顯示本實施形態之螢光體元件1的構成之圖。圖1中,(a)為螢光體元件1的平面圖,(b)為(a)中的Ib-Ib線之螢光體元件1的剖面圖。 (implementation form) [composition] First, the structure of the phosphor element 1 according to the embodiment will be described using FIG. 1 . FIG. 1 is a diagram showing the structure of the phosphor element 1 of this embodiment. In FIG. 1 , (a) is a plan view of the phosphor element 1, and (b) is a cross-sectional view of the phosphor element 1 taken along the line Ib-Ib in (a).

如圖1所示,本實施形態之螢光體元件1,具備基板構件10、及設置於基板構件10之波長轉換構件20。基板構件10與波長轉換構件20,直接熱接觸。波長轉換構件20,與基板構件10之頂面直接接觸而設置。亦即,於基板構件10與波長轉換構件20之間,不存在黏接層等黏接構件或接合層等接合構件。另,本實施形態中,亦存在使基板構件10與波長轉換構件20接觸之基板構件10的接觸面、或使波長轉換構件20與基板構件10接觸之波長轉換構件20的接觸面之表面並非完全平滑的情況。此一情況,即便於基板構件10與波長轉換構件20之間存在部分空間,若具有基板構件10與波長轉換構件20直接物理接觸的部分,仍視作直接熱接觸。進一步,此一情況,於上述部分空間存在空氣。藉由使基板構件10與波長轉換構件20直接熱接觸,而可將波長轉換構件20所發出的熱,往基板構件10高效率地散熱,故可實現高效率之螢光體元件1。此外,藉由使基板構件10與波長轉換構件20直接熱接觸,而可實現未使用黏接層等黏接構件或接合層等接合構件的構造簡單之螢光體元件1。As shown in FIG. 1 , the phosphor element 1 of this embodiment includes a substrate member 10 and a wavelength conversion member 20 provided on the substrate member 10 . The substrate member 10 and the wavelength conversion member 20 are in direct thermal contact. The wavelength conversion member 20 is provided in direct contact with the top surface of the substrate member 10 . That is, there is no adhesive member such as an adhesive layer or a joint member such as a bonding layer between the substrate member 10 and the wavelength conversion member 20 . In addition, in this embodiment, the surface of the contact surface of the substrate member 10 that brings the substrate member 10 and the wavelength conversion member 20 into contact, or the contact surface of the wavelength conversion member 20 that brings the wavelength conversion member 20 and the substrate member 10 into contact is not perfect. Smooth situation. In this case, even if there is a partial space between the substrate member 10 and the wavelength conversion member 20, if there is a portion where the substrate member 10 and the wavelength conversion member 20 are in direct physical contact, it is still regarded as direct thermal contact. Furthermore, in this case, air exists in the above-mentioned part of the space. By bringing the substrate member 10 and the wavelength conversion member 20 into direct thermal contact, the heat generated by the wavelength conversion member 20 can be efficiently dissipated to the substrate member 10 , so that a highly efficient phosphor element 1 can be realized. In addition, by bringing the substrate member 10 and the wavelength conversion member 20 into direct thermal contact, the phosphor element 1 having a simple structure without using an adhesive member such as an adhesive layer or a joining member such as a bonding layer can be realized.

基板構件10,具備透光基材11、及設置於透光基材11之介電材料多層膜12與反射防止膜13。此外,波長轉換構件20,具備發出螢光之螢光部21、及將光反射之光反射部22。The substrate member 10 includes a light-transmitting base material 11 and a dielectric material multilayer film 12 and an anti-reflection film 13 provided on the light-transmitting base material 11 . Furthermore, the wavelength conversion member 20 is provided with a fluorescent part 21 that emits fluorescent light, and a light reflecting part 22 that reflects light.

基板構件10之透光基材11,為具有透光性之基板,具有第1面11a(頂面)即波長轉換構件20側的面、及與第1面11a背向的第2面11b(底面)。The light-transmitting base material 11 of the substrate member 10 is a light-transmitting substrate and has a first surface 11a (top surface), which is the surface on the wavelength conversion member 20 side, and a second surface 11b (backward to the first surface 11a). bottom surface).

透光基材11,宜為光透射率高之基板。具體而言,透光基材11,宜為透射率高至可透過而看見對向側之程度的透明基板。例如,透光基材11的可見光透射率,宜為60%以上,更宜為80%以上,進一步宜為90%以上,但並未限定於此一形態。此外,作為透光基材11,宜為耐熱性高之基板。作為此等透明基板,可使用由Al 2O 3形成之氧化鋁基板、由AlN形成之氮化鋁基板、或由GaN形成之氮化鎵基板。此一情況,構成透光基材11的材料之主成分,分別為Al 2O 3、AlN、或GaN。此外,作為耐熱性及光透射率高之透明基板,不限於此等透明基板,亦可為藍寶石基板或玻璃基板等透明基板。作為一例,透光基材11的形狀,為縱長7.0mm×橫寬7.0mm×厚度1.0mm的矩形薄板狀。 The light-transmitting substrate 11 is preferably a substrate with high light transmittance. Specifically, the light-transmitting base material 11 is preferably a transparent substrate with a transmittance high enough to allow the opposite side to be seen through the light-transmitting base material 11 . For example, the visible light transmittance of the light-transmitting base material 11 is preferably 60% or more, more preferably 80% or more, and further preferably 90% or more, but it is not limited to this form. In addition, the light-transmitting substrate 11 is preferably a substrate with high heat resistance. As such transparent substrates, an aluminum oxide substrate formed of Al 2 O 3 , an aluminum nitride substrate formed of AlN, or a gallium nitride substrate formed of GaN can be used. In this case, the main component of the material constituting the light-transmitting base material 11 is Al 2 O 3 , AlN, or GaN. In addition, the transparent substrate with high heat resistance and light transmittance is not limited to these transparent substrates, and may also be a transparent substrate such as a sapphire substrate or a glass substrate. As an example, the shape of the light-transmitting base material 11 is a rectangular thin plate with a length of 7.0 mm, a width of 7.0 mm, and a thickness of 1.0 mm.

介電材料多層膜12,設置於透光基材11的第1面11a。本實施形態中,介電材料多層膜12,係成為基板構件10之最上層的表面膜。The dielectric material multilayer film 12 is provided on the first surface 11a of the light-transmitting base material 11. In this embodiment, the dielectric material multilayer film 12 serves as the uppermost surface film of the substrate member 10 .

介電材料多層膜12,成為將複數介電材料膜疊層的構成,反射特定的光,並使其他特定的光透射過。本實施形態之介電材料多層膜12,將以波長轉換構件20的螢光部21之螢光體螢光發光的光反射,並使入射至螢光體元件1的激發光透射過。例如,在使螢光部21由黃色螢光體構成,使入射至螢光體元件1的激發光為紫外線或藍色光之情況,介電材料多層膜12,至少將螢光部21所發出的黃色光反射,並使激發光的紫外線或藍色光透射過。The dielectric material multilayer film 12 has a structure in which a plurality of dielectric material films are laminated, reflects specific light, and transmits other specific light. The dielectric material multilayer film 12 of this embodiment reflects the light emitted by the phosphor fluorescence of the phosphor part 21 of the wavelength conversion member 20 and transmits the excitation light incident on the phosphor element 1 . For example, when the fluorescent part 21 is made of yellow phosphor and the excitation light incident on the fluorescent element 1 is ultraviolet light or blue light, the dielectric material multilayer film 12 at least converts the light emitted by the fluorescent part 21 The yellow light is reflected and the ultraviolet or blue light of the excitation light is transmitted.

藉由如此地在透光基材11的第1面11a側(波長轉換構件20側)設置介電材料多層膜12,而可藉由介電材料多層膜12將波長轉換構件20之螢光部21所發出的光中之前往基板構件10的光反射。藉此,可使從螢光體元件1取出之螢光部21的光增多。By disposing the dielectric material multilayer film 12 on the first surface 11a side (wavelength conversion member 20 side) of the light-transmitting base material 11 in this way, the fluorescent part of the wavelength conversion member 20 can be converted into light by the dielectric material multilayer film 12. Among the light emitted by 21, the light that has been directed to the substrate member 10 is reflected. Thereby, the light emitted from the fluorescent part 21 from the fluorescent element 1 can be increased.

反射防止膜13,設置於透光基材11的第2面11b。本實施形態中,反射防止膜13,係成為基板構件10之最下層的表面膜。The anti-reflection film 13 is provided on the second surface 11 b of the light-transmitting base material 11 . In this embodiment, the anti-reflection film 13 is a surface film serving as the lowermost layer of the substrate member 10 .

反射防止膜13,可為單層膜亦可為多層膜。作為一例,反射防止膜13,係將矽氧化物(SiO 2)、鈦氧化物(TiO 2)、鈮氧化物(Nb 2O 5)、鉭氧化物(Ta 2O 5)、鋁氧化物(Al 2O 3)、鋁氮化物(AlN)等至少2種介電材料膜疊層的多層膜。 The anti-reflection film 13 may be a single-layer film or a multi-layer film. As an example, the antireflection film 13 is made of silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), niobium oxide (Nb 2 O 5 ), tantalum oxide (Ta 2 O 5 ), aluminum oxide ( A multilayer film composed of at least two dielectric material films such as Al 2 O 3 ) and aluminum nitride (AlN).

藉由如此地於透光基材11的第2面11b設置反射防止膜13,而可抑制從透光基材11的第2面11b側入射至螢光體元件1的光之反射。藉此,可將從透光基材11的第2面11b側入射至透光基材11的光效率良好地引入透光基材11。具體而言,可將為了使螢光部21螢光發光而入射至螢光體元件1的激發光,效率良好地引入透光基材11。By providing the anti-reflection film 13 on the second surface 11 b of the light-transmitting base material 11 in this way, the reflection of light incident on the phosphor element 1 from the second surface 11 b side of the light-transmitting base material 11 can be suppressed. Thereby, the light incident on the light-transmitting base material 11 from the second surface 11b side of the light-transmitting base material 11 can be efficiently introduced into the light-transmitting base material 11 . Specifically, the excitation light incident on the phosphor element 1 in order to cause the phosphor portion 21 to emit fluorescent light can be efficiently introduced into the light-transmitting base material 11 .

波長轉換構件20,設置於基板構件10,更具體而言,設置於基板構件10之上方。The wavelength conversion member 20 is provided on the substrate member 10 , more specifically, above the substrate member 10 .

波長轉換構件20之螢光部21為發出光的發光層,藉由激發光而激發,將可見光範圍之既定波長的光進行螢光發光。作為一例,螢光部21,係由黃色螢光體構成的黃色螢光體層。此一情況,黃色螢光體層,即螢光部21,將較黃色光更為短波長的光(例如紫外線~藍色光)作為激發光而發出螢光。亦即,在黃色螢光體層,將激發光波長轉換為較該激發光更為長波長的黃色光。The fluorescent portion 21 of the wavelength conversion member 20 is a light-emitting layer that emits light and is excited by excitation light to fluoresce light of a predetermined wavelength in the visible light range. As an example, the fluorescent part 21 is a yellow phosphor layer composed of yellow phosphor. In this case, the yellow phosphor layer, that is, the fluorescent portion 21, uses light with a shorter wavelength than yellow light (for example, ultraviolet to blue light) as excitation light to emit fluorescence. That is, in the yellow phosphor layer, the wavelength of the excitation light is converted into yellow light with a longer wavelength than the excitation light.

螢光部21,係僅由螢光體形成之螢光體層。具體而言,螢光部21,係由燒結後的單一結晶相之螢光體構成的螢光體陶瓷層,主成分為螢光體陶瓷。此外,如同後述,螢光部21為由包含Ce 3+之YAG(釔鋁石榴石)螢光體形成的黃色螢光體層。亦即,螢光部21之主成分為包含Ce 3+的YAG螢光體陶瓷;更具體而言,螢光部21為僅以包含Ce 3+的YAG螢光體陶瓷形成之構件。換而言之,螢光部21,不具有黏結劑等。此外,螢光部21即包含Ce 3+的YAG螢光體陶瓷之Ce 3+濃度為0.005%以上0.02%以下。藉由使Ce 3+濃度為0.005%以上0.02%以下,而成為溫度淬滅(因溫度上升而造成之螢光體的轉換效率之降低)少的YAG螢光體陶瓷,故可實現效率高之螢光體元件1。 The fluorescent part 21 is a phosphor layer formed only of phosphor. Specifically, the phosphor portion 21 is a phosphor ceramic layer composed of a single crystal phase phosphor after sintering, and the main component is phosphor ceramic. As will be described later, the phosphor portion 21 is a yellow phosphor layer formed of a YAG (yttrium aluminum garnet) phosphor containing Ce 3+ . That is, the main component of the phosphor part 21 is YAG phosphor ceramic containing Ce 3+ ; more specifically, the phosphor part 21 is a member formed only of YAG phosphor ceramic containing Ce 3+ . In other words, the fluorescent part 21 does not have an adhesive or the like. In addition, the Ce 3+ concentration of the YAG phosphor ceramic containing Ce 3+ in the fluorescent part 21 is 0.005% or more and 0.02% or less. By setting the Ce 3+ concentration to 0.005% or more and 0.02% or less, it becomes a YAG phosphor ceramic with less temperature quenching (a decrease in the conversion efficiency of the phosphor due to temperature rise), so it is possible to achieve high efficiency. Phosphor element 1.

如此地,藉由使用螢光體陶瓷層作為螢光部21,而可改善耐熱性及散熱性。此外,藉由使用螢光體陶瓷層作為螢光部21,而可抑制因螢光的散射所造成之光損耗,故可改善螢光部21的轉換效率。本實施形態中,螢光部21,係僅由單一結晶相形成的螢光體陶瓷層。In this way, by using the phosphor ceramic layer as the phosphor portion 21, heat resistance and heat dissipation can be improved. In addition, by using a phosphor ceramic layer as the fluorescent part 21, light loss caused by scattering of fluorescent light can be suppressed, so the conversion efficiency of the fluorescent part 21 can be improved. In this embodiment, the fluorescent part 21 is a phosphor ceramic layer formed only of a single crystal phase.

螢光部21,包含具有石榴石構造之結晶相。更具體而言,本實施形態中,螢光部21,僅由具有石榴石構造之結晶相構成。亦即,本實施形態之螢光部21,不包含具有與石榴石構造不同的構造之結晶相。石榴石構造,係以A 3B 2C 3O 12之一般式表示的結晶構造。於元素A,應用Ca、Y、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb及Lu等稀土元素;於元素B,應用Mg、Al、Si、Ga及Sc等元素;於元素C,應用Al、Si及Ga等元素。作為此等石榴石構造,可列舉YAG(釔鋁石榴石)、LuAG(鎦鋁石榴石)、Lu 3Ga 2(AlO 4) 3(鎦鎵鋁石榴石)、Y 3Ga 2(AlO 4) 3(釔鎵鋁石榴石)、Lu 2CaMg 2Si 3O 12(鎦鈣鎂矽石榴石)及TAG(铽鋁石榴石)等。作為Ce 3+賦活螢光體,宜使用此等石榴石構造。本實施形態中,構成螢光部21之螢光體的材料,係以(Y 1-xCe x) 3Al 2Al 3O 12(亦即,(Y 1-xCe x) 3Al 5O 12)(0.00005≦x<0.0002)表示之結晶相,亦即由YAG構成;螢光部21,係僅以燒結YAG形成的螢光體陶瓷層。具體而言,螢光部21,係以YAG螢光體形成的黃色螢光體層。 The fluorescent part 21 contains a crystal phase having a garnet structure. More specifically, in this embodiment, the fluorescent part 21 is composed only of a crystal phase having a garnet structure. That is, the fluorescent portion 21 of this embodiment does not include a crystal phase having a structure different from the garnet structure. The garnet structure is a crystal structure represented by the general formula of A 3 B 2 C 3 O 12 . For element A, use rare earth elements such as Ca, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb and Lu; for element B, use elements such as Mg, Al, Si, Ga and Sc; for element C , using elements such as Al, Si and Ga. Examples of such garnet structures include YAG (yttrium aluminum garnet), LuAG (gallium aluminum garnet), Lu 3 Ga 2 (AlO 4 ) 3 (gallium aluminum garnet), and Y 3 Ga 2 (AlO 4 ). 3 (yttrium gallium aluminum garnet), Lu 2 CaMg 2 Si 3 O 12 (yttrium gallium aluminum garnet) and TAG (terbium aluminum garnet), etc. As a Ce 3+ activated phosphor, it is appropriate to use this garnet structure. In this embodiment, the material of the phosphor constituting the phosphor part 21 is (Y 1-x Ce x ) 3 Al 2 Al 3 O 12 (that is, (Y 1-x Ce x ) 3 Al 5 O 12 ) The crystal phase represented by (0.00005≦x<0.0002) is composed of YAG; the fluorescent part 21 is a phosphor ceramic layer formed only of sintered YAG. Specifically, the fluorescent part 21 is a yellow phosphor layer formed of YAG phosphor.

另,構成螢光部21之結晶相,亦可為化學組成不同的複數種石榴石結晶相的固溶體。作為此等固溶體,可列舉:以(Y 1-xCe x) 3Al 2Al 3O 12(0.00005≦x<0.0002)表示之石榴石結晶相與以(Lu 1-dCe d) 3Al 2Al 3O 12(0.00005≦d<0.0002)表示之石榴石結晶相的固溶體((1-a)(Y 1-xCe x) 3Al 5O 12・a(Lu 1-dCe d) 3Al 2Al 3O 12(0<a<1))。此外,作為此等固溶體,可列舉:以(Y 1-xCe x) 3Al 2Al 3O 12(0.00005≦x<0.0002)表示之石榴石結晶相與以(Lu 1-zCe z) 2CaMg 2Si 3O 12(0.00005≦z<0.0002)表示之石榴石結晶相的固溶體((1-b)(Y 1-xCe x) 3Al 2Al 3O 12・b(Lu 1-zCe z) 2CaMg 2Si 3O 12(0<b<1))等。藉由使螢光部21以化學組成不同之複數種石榴石結晶相的固溶體構成,而使螢光部21所發出的螢光之螢光光譜更為廣帶域化,增加綠色光成分與紅色光成分。因此,可提供發出色域廣的輸出光之螢光體元件1。 In addition, the crystal phase constituting the fluorescent part 21 may also be a solid solution of a plurality of garnet crystal phases with different chemical compositions. Examples of such solid solutions include the garnet crystal phase represented by (Y 1-x Ce x ) 3 Al 2 Al 3 O 12 (0.00005≦x<0.0002) and the garnet crystal phase represented by (Lu 1-d Ce d ) 3 Solid solution of garnet crystal phase represented by Al 2 Al 3 O 12 (0.00005≦d<0.0002) ((1-a)(Y 1-x Ce x ) 3 Al 5 O 12・a(Lu 1-d Ce d ) 3 Al 2 Al 3 O 12 (0<a<1)). Examples of such solid solutions include the garnet crystal phase represented by (Y 1-x Ce x ) 3 Al 2 Al 3 O 12 (0.00005≦x<0.0002) and the garnet crystal phase represented by (Lu 1-z Ce z ) 2 CaMg 2 Si 3 O 12 (0.00005≦z<0.0002) solid solution of garnet crystal phase ((1-b)(Y 1-x Ce x ) 3 Al 2 Al 3 O 12・b(Lu 1-z Ce z ) 2 CaMg 2 Si 3 O 12 (0<b<1)) etc. By making the fluorescent part 21 consist of a solid solution of a plurality of garnet crystal phases with different chemical compositions, the fluorescence spectrum of the fluorescent light emitted by the fluorescent part 21 is broadened and the green light component is increased. with red light component. Therefore, the phosphor element 1 that emits output light with a wide color gamut can be provided.

此外,構成螢光部21之結晶相,亦可包含相對於以上述一般式A 3B 2C 3O 12表示之結晶相,使化學組成偏移之結晶相。作為此等結晶相,可列舉:相對於以(Y 1-xCe x) 3Al 2Al 3O 12(0.00005≦x<0.0002)表示之結晶相為富鋁的(Y 1-xCe x) 3Al 2+δAl 3O 12(δ為正的數)。此外,作為此等結晶相,可列舉:相對於以(Y 1-xCe x) 3Al 2Al 3O 12(0.00005≦x<0.0002)表示之結晶相為富釔的(Y 1-xCe x) 3+ζAl 2Al 3O 12(ζ為正的數)等。此等結晶相,相對於以一般式A 3B 2C 3O 12表示之結晶相,使化學組成偏移,但維持石榴石構造。由於使螢光部21由使化學組成偏移之結晶相構成,而在螢光部21之中產生折射率不同的區域,故激發光及螢光更為散射,使螢光部21的發光面積變得更小。 In addition, the crystal phase constituting the fluorescent portion 21 may include a crystal phase whose chemical composition is shifted from the crystal phase represented by the general formula A 3 B 2 C 3 O 12 described above. Examples of such crystal phases include (Y 1-x Ce x ) which is rich in aluminum relative to the crystal phase represented by (Y 1-x Ce x ) 3 Al 2 Al 3 O 12 (0.00005≦x<0.0002 ) . 3 Al 2+δ Al 3 O 12 (δ is a positive number). Examples of such crystal phases include (Y 1-x Ce x ) 3 Al 2 Al 3 O 12 (0.00005≦x<0.0002) which is yttrium- rich. x ) 3+ζ Al 2 Al 3 O 12 (ζ is a positive number), etc. These crystal phases deviate in chemical composition from the crystal phase represented by the general formula A 3 B 2 C 3 O 12 , but maintain the garnet structure. Since the fluorescent part 21 is composed of a crystalline phase that shifts the chemical composition, regions with different refractive indexes are generated in the fluorescent part 21 , so the excitation light and fluorescent light are further scattered, increasing the light-emitting area of the fluorescent part 21 become smaller.

進一步,作為構成螢光部21的材料,亦可使用作為Cr 3+賦活螢光體的以下材料。該材料,係從由Y 3Al 2(AlO 4) 3:Cr 3+、La 3Al 2(AlO 4) 3:Cr 3+、Gd 3Al 2(AlO 4) 3:Cr 3+、Y 3Ga 2(AlO 4) 3:Cr 3+、La 3Ga 2(AlO 4) 3:Cr 3+、Gd 3Ga 2(AlO 4) 3:Cr 3+、Y 3Sc 2(AlO 4) 3:Cr 3+、La 3Sc 2(AlO 4) 3:Cr 3+、Gd 3Sc 2(AlO 4) 3:Cr 3+、Y 3Ga 2(GaO 4) 3:Cr 3+、La 3Ga 2(GaO 4) 3:Cr 3+、(Gd,La) 3Ga 2(GaO 4) 3:Cr 3+、Gd 3Ga 2(GaO 4) 3:Cr 3+、Y 3Sc 2(GaO 4) 3:Cr 3+、La 3Sc 2(GaO 4) 3:Cr 3+、Gd 3Sc 2(GaO 4) 3:Cr 3+、(Gd,La) 3(Ga,Sc) 2(GaO 4) 3:Cr 3+、Ga 2O 3:Cr 3+、及(Ga,Sc) 2O 3:Cr 3+構成的群組中選出之至少一種。另,螢光部21,亦可為Cr 3+賦活螢光體之材料的固溶體。 Furthermore, as the material constituting the phosphor portion 21, the following materials that are Cr 3+ activated phosphors can also be used. This material is composed of Y 3 Al 2 (AlO 4 ) 3 : Cr 3+ , La 3 Al 2 (AlO 4 ) 3 : Cr 3+ , Gd 3 Al 2 (AlO 4 ) 3 : Cr 3+ , Y 3 Ga 2 (AlO 4 ) 3 : Cr 3+ , La 3 Ga 2 (AlO 4 ) 3 : Cr 3+ , Gd 3 Ga 2 (AlO 4 ) 3 : Cr 3+ , Y 3 Sc 2 (AlO 4 ) 3 : Cr 3+ , La 3 Sc 2 (AlO 4 ) 3 : Cr 3+ , Gd 3 Sc 2 (AlO 4 ) 3 : Cr 3+ , Y 3 Ga 2 (GaO 4 ) 3 : Cr 3+ , La 3 Ga 2 (GaO 4 ) 3 : Cr 3+ , (Gd,La) 3 Ga 2 (GaO 4 ) 3 : Cr 3+ , Gd 3 Ga 2 (GaO 4 ) 3 : Cr 3+ , Y 3 Sc 2 (GaO 4 ) 3 : Cr 3+ , La 3 Sc 2 (GaO 4 ) 3 : Cr 3+ , Gd 3 Sc 2 (GaO 4 ) 3 : Cr 3+ , (Gd,La) 3 (Ga,Sc) 2 (GaO 4 ) At least one selected from the group consisting of 3 : Cr 3+ , Ga 2 O 3 : Cr 3+ , and (Ga,Sc) 2 O 3 : Cr 3+ . In addition, the fluorescent part 21 may also be a solid solution of a Cr 3+ activated phosphor material.

螢光部21之密度(即YAG螢光體陶瓷之密度),宜為理論密度的90%以上100%以下,更宜為理論密度的95%以上100%以下,進一步宜為理論密度的98%以上100%以下。此處,理論密度,係使層中之原子理想地排列的情況之密度。換而言之,理論密度係假定為螢光部21中不存在空隙時之密度,為利用結晶構造計算的值。例如,螢光部21之密度為99%的情況,剩下的1%相當於空隙。亦即,螢光部21之密度越高,則空隙越少。若螢光部21之密度位於上述範圍,則螢光部21所發出的總螢光量增加,故可提供放射的光量更多之螢光體元件1。The density of the phosphor part 21 (that is, the density of the YAG phosphor ceramic) is preferably not less than 90% and not more than 100% of the theoretical density, more preferably not less than 95% and not more than 100% of the theoretical density, and further preferably not less than 98% of the theoretical density. Above 100% below. Here, the theoretical density is the density in which the atoms in the layer are ideally arranged. In other words, the theoretical density is a value calculated based on the crystal structure assuming that there are no voids in the fluorescent part 21 . For example, when the density of the fluorescent part 21 is 99%, the remaining 1% corresponds to the void. That is, the higher the density of the fluorescent part 21 is, the fewer the gaps are. If the density of the fluorescent portion 21 is within the above range, the total amount of fluorescent light emitted by the fluorescent portion 21 increases, so that a fluorescent element 1 that emits a greater amount of light can be provided.

此外,螢光部21之密度,宜為4.10g/cm 3以上4.55g/cm 3以下,更宜為4.32g/cm 3以上4.55g/cm 3以下,進一步宜為4.46g/cm 3以上4.55g/cm 3以下。如本實施形態所示,在以YAG構成螢光部21的情況,若使螢光部21之密度位於上述範圍,則螢光部21之密度分別成為理論密度的90%以上100%以下、95%以上100%以下、及98%以上100%以下。藉由使螢光部21之密度位於上述範圍,而可使螢光部21將吸收的激發光效率良好地轉換為螢光。亦即,實現發光效率高之螢光部21。 In addition, the density of the fluorescent part 21 is preferably 4.10g/cm 3 or more and 4.55g/cm 3 or less, more preferably 4.32g/cm 3 or more and 4.55g/cm 3 or less, further preferably 4.46g/cm 3 or more and 4.55g/cm 3 g/cm 3 or less. As shown in this embodiment, when the fluorescent part 21 is composed of YAG, if the density of the fluorescent part 21 is within the above range, the density of the fluorescent part 21 becomes 90% to 100% and 95% of the theoretical density respectively. % or more and less than 100%, and 98% or more and less than 100%. By setting the density of the fluorescent part 21 within the above range, the fluorescent part 21 can efficiently convert the absorbed excitation light into fluorescent light. That is, the fluorescent part 21 with high luminous efficiency is realized.

螢光部21之俯視形狀為矩形,但並未限定於此一形態。螢光部21之俯視形狀,亦可為圓形。作為一例,螢光部21之俯視形狀,為縱長0.8mm×橫寬0.8mm的矩形。The fluorescent portion 21 has a rectangular shape in plan view, but is not limited to this shape. The fluorescent part 21 may also be circular in plan view. As an example, the plan view shape of the fluorescent part 21 is a rectangle with a length of 0.8 mm and a width of 0.8 mm.

此外,螢光部21之厚度(即YAG螢光體陶瓷之厚度)為350μm以上820μm以下。此厚度非常厚,藉此,可確保螢光部21之從側面的散熱性。另,螢光部21之厚度為一定,但並未限定於此一形態。另,螢光部21之厚度,亦可為350μm以上805μm以下,或亦可為400μm以上805μm以下。In addition, the thickness of the fluorescent part 21 (that is, the thickness of the YAG phosphor ceramic) is 350 μm or more and 820 μm or less. This thickness is very thick, thereby ensuring heat dissipation from the side of the fluorescent part 21 . In addition, the thickness of the fluorescent part 21 is constant, but is not limited to this form. In addition, the thickness of the fluorescent part 21 may be 350 μm or more and 805 μm or less, or may be 400 μm or more and 805 μm or less.

螢光部21,具有光入射面211、光出射面212及側面(4面側面213~216)。光入射面211,係激發螢光部21的激發光所入射的面,為螢光部21的底面。光出射面212,係螢光部21將螢光射出的面,為螢光部21的頂面。亦即,光入射面211與光出射面212為彼此背向的面。4面側面213~216,為螢光部21之側方側的面。4面側面213~216,各自為與光入射面211及光出射面212呈正交的平面。2面側面213及215為彼此背向的面,2面側面214及216為彼此背向的面。The fluorescent part 21 has a light incident surface 211, a light exit surface 212, and side surfaces (four side surfaces 213 to 216). The light incident surface 211 is a surface on which the excitation light for exciting the fluorescent part 21 is incident, and is the bottom surface of the fluorescent part 21 . The light exit surface 212 is the surface from which the fluorescent part 21 emits fluorescent light, and is the top surface of the fluorescent part 21 . That is, the light incident surface 211 and the light exit surface 212 are surfaces facing away from each other. The four side surfaces 213 to 216 are lateral surfaces of the fluorescent part 21 . Each of the four side surfaces 213 to 216 is a plane orthogonal to the light incident surface 211 and the light exit surface 212 . The two side surfaces 213 and 215 are surfaces facing away from each other, and the two side surfaces 214 and 216 are surfaces facing away from each other.

從光出射面212之方向觀察時,亦即俯視時,波長轉換構件20之光反射部22,設置於螢光部21的周圍。本實施形態中,俯視時,光反射部22,將螢光部21的周圍全體包圍。亦即,光反射部22,與螢光部21之全部4面側面213~216的整面接觸。具體而言,螢光部21之俯視形狀為矩形,故光反射部22具有矩形的開口部。具體而言,光反射部22之俯視形狀,呈具有矩形的開口部且外形為矩形的矩形框狀。另,光反射部22之俯視形狀,不限於矩形框狀,亦可為圓環狀等。作為一例,光反射部22的外形之俯視形狀,為縱長7.0mm×橫寬7.0mm。另,本實施形態中,光反射部22之厚度與螢光部21之厚度相同,但並未限定於此一形態。When viewed from the direction of the light exit surface 212 , that is, when viewed from above, the light reflecting portion 22 of the wavelength converting member 20 is provided around the fluorescent portion 21 . In this embodiment, when viewed from above, the light reflecting portion 22 entirely surrounds the fluorescent portion 21 . That is, the light reflecting portion 22 is in contact with the entire four side surfaces 213 to 216 of the fluorescent portion 21 . Specifically, since the fluorescent part 21 has a rectangular plan view shape, the light reflecting part 22 has a rectangular opening. Specifically, the light reflecting portion 22 has a plan view shape of a rectangular frame having a rectangular opening and a rectangular outer shape. In addition, the plan view shape of the light reflecting portion 22 is not limited to a rectangular frame shape, and may also be annular or the like. As an example, the outer shape of the light reflecting portion 22 is 7.0 mm in length and 7.0 mm in width in plan view. In addition, in this embodiment, the thickness of the light reflection part 22 is the same as the thickness of the fluorescent part 21, but it is not limited to this form.

光反射部22,與螢光部21熱接觸。亦即,螢光部21與光反射部22,設置為可將在螢光部21產生的熱傳導至光反射部22。本實施形態中,光反射部22,與螢光部21物理接觸。具體而言,使光反射部22之全部的內周側面與螢光部21的外周側面接觸。亦即,螢光部21,設置為充填於光反射部22的開口部。The light reflecting part 22 is in thermal contact with the fluorescent part 21. That is, the fluorescent part 21 and the light reflecting part 22 are provided so that the heat generated in the fluorescent part 21 can be conducted to the light reflecting part 22. In this embodiment, the light reflecting part 22 is in physical contact with the fluorescent part 21. Specifically, the entire inner peripheral side surface of the light reflecting portion 22 is brought into contact with the outer peripheral side surface of the fluorescent portion 21 . That is, the fluorescent portion 21 is provided to fill the opening of the light reflecting portion 22 .

另,光反射部22之厚度(高度),成為與螢光部21之厚度(高度)相同,但並未限定於此一形態。亦即,光反射部22之厚度,亦可較螢光部21之厚度更低,或亦可較螢光部21之厚度更高。然則,光反射部22,宜設置為未達到螢光部21的頂面。亦即,光反射部22,宜形成為使構成光反射部22的材料(黏結劑等)不從螢光部21的頂面突出。In addition, the thickness (height) of the light reflection part 22 is the same as the thickness (height) of the fluorescent part 21, but it is not limited to this form. That is, the thickness of the light reflecting part 22 may be lower than the thickness of the fluorescent part 21 , or may be higher than the thickness of the fluorescent part 21 . However, the light reflecting portion 22 is preferably provided so as not to reach the top surface of the fluorescent portion 21 . That is, the light reflecting portion 22 is preferably formed so that the material (adhesive, etc.) constituting the light reflecting portion 22 does not protrude from the top surface of the fluorescent portion 21 .

光反射部22之主成分為光反射性陶瓷,光反射性陶瓷之主成分為氧化鋁陶瓷。亦即,此處,光反射部22,由以氧化鋁(鋁氧化物(Al 2O 3))等陶瓷材料形成的陶瓷層構成。更具體而言,光反射部22,係僅以氧化鋁形成的氧化鋁陶瓷層。換而言之,光反射部22,不具有黏結劑等。本實施形態中,光反射部22將可見光帶域之波長的光反射,故為白色。亦即,光反射部22為白色陶瓷層。另,光反射部22,若具有將可見光反射之功能,則不由陶瓷構成亦可,例如,光反射部22,亦可為包含光反射性粒子的白色樹脂或金屬。 The main component of the light reflective part 22 is light reflective ceramics, and the main component of the light reflective ceramics is alumina ceramics. That is, here, the light reflecting portion 22 is composed of a ceramic layer made of a ceramic material such as aluminum oxide (aluminum oxide (Al 2 O 3 )). More specifically, the light reflecting portion 22 is an alumina ceramic layer formed only of alumina. In other words, the light reflecting part 22 does not have an adhesive or the like. In this embodiment, the light reflection part 22 reflects the light of the wavelength in the visible light band, so it is white. That is, the light reflecting part 22 is a white ceramic layer. In addition, if the light reflection part 22 has the function of reflecting visible light, it does not need to be made of ceramics. For example, the light reflection part 22 may also be made of white resin or metal containing light reflective particles.

於光反射部22(即光反射性陶瓷)之內部,存在用於將光散亂反射之無數個光散射部23。具體而言,光反射部22為陶瓷層的情況,於陶瓷層之內部,為了將光散亂反射,存在無數個空隙(空氣層)作為光散射部23。Inside the light reflecting part 22 (that is, the light reflecting ceramic), there are countless light scattering parts 23 for scattering and reflecting light. Specifically, when the light reflecting part 22 is a ceramic layer, there are countless voids (air layers) as the light scattering part 23 inside the ceramic layer in order to scatter and reflect light.

光反射部22之密度(即光反射性陶瓷之密度),宜為理論密度的98%以下,更宜為95%以下,進一步宜為90%以下。The density of the light reflective portion 22 (that is, the density of the light reflective ceramic) is preferably 98% or less of the theoretical density, more preferably 95% or less, and further preferably 90% or less.

本實施形態之螢光部21,係僅以燒結螢光體形成的螢光體陶瓷層;光反射部22,係由氧化鋁陶瓷構成的陶瓷層。藉此,容易使螢光部21與光反射部22一體化。The fluorescent part 21 of this embodiment is a phosphor ceramic layer formed only of sintered phosphors, and the light reflecting part 22 is a ceramic layer made of alumina ceramic. This makes it easy to integrate the fluorescent part 21 and the light reflecting part 22 .

接著,利用圖2,針對使用本實施形態之螢光體元件1的光源模組100之構成與螢光體元件1的光學作用予以說明。圖2係顯示本實施形態之光源模組100的構成之圖。Next, the structure of the light source module 100 using the phosphor element 1 of this embodiment and the optical function of the phosphor element 1 will be described using FIG. 2 . FIG. 2 is a diagram showing the structure of the light source module 100 of this embodiment.

本實施形態之光源模組100,具備螢光體元件1、及發出入射至螢光體元件1的光之光源2。光源模組100,作為一例,可作為內視鏡所具備之發光裝置而利用。The light source module 100 of this embodiment includes a phosphor element 1 and a light source 2 that emits light incident on the phosphor element 1 . The light source module 100 can be used as a light-emitting device provided in an endoscope, for example.

光源2為激發光源,射出用於使波長轉換構件20之螢光部21發光的激發光。螢光部21所含的螢光體,藉由從光源2射出的激發光而激發,發出螢光。本實施形態中,光源模組100,係使入射至螢光體元件1的激發光透射過螢光體元件1之透射型的發光裝置。亦即,入射至螢光體元件1的激發光,透射過波長轉換構件20。因此,光源2,配置為使光源2所射出的光透射過螢光體元件1。具體而言,光源2,配置於螢光體元件1的下方(基板構件10側)。The light source 2 is an excitation light source and emits excitation light for causing the fluorescent part 21 of the wavelength conversion member 20 to emit light. The phosphor contained in the fluorescent part 21 is excited by the excitation light emitted from the light source 2 and emits fluorescent light. In this embodiment, the light source module 100 is a transmission-type light-emitting device that transmits the excitation light incident on the phosphor element 1 through the phosphor element 1 . That is, the excitation light incident on the phosphor element 1 is transmitted through the wavelength conversion member 20 . Therefore, the light source 2 is arranged so that the light emitted by the light source 2 is transmitted through the phosphor element 1 . Specifically, the light source 2 is arranged below the phosphor element 1 (on the substrate member 10 side).

作為光源2,例如可使用射出紫外線或藍色光的雷射光之半導體雷射。雷射光直進性良好,故藉由使用半導體雷射作為光源2,而能夠使雷射光(激發光)以期望的入射角入射至螢光部21。另,光源2,不限於半導體雷射,亦可為LED等其他固體發光元件、或固體發光元件以外的激發光源。As the light source 2, for example, a semiconductor laser that emits laser light of ultraviolet light or blue light can be used. Laser light has good linear propagation, so by using a semiconductor laser as the light source 2, the laser light (excitation light) can be incident on the fluorescent part 21 at a desired incident angle. In addition, the light source 2 is not limited to a semiconductor laser, and may also be other solid light emitting devices such as LEDs, or an excitation light source other than solid light emitting devices.

在如此地構成的光源模組100,藉由使從光源2射出的光入射至螢光體元件1,而從螢光體元件1發出既定色彩的輸出光。更具體而言,從螢光部21的光出射面212發出既定色彩的輸出光。In the light source module 100 configured in this manner, the light emitted from the light source 2 is incident on the phosphor element 1, so that the phosphor element 1 emits output light of a predetermined color. More specifically, output light of a predetermined color is emitted from the light exit surface 212 of the fluorescent part 21 .

具體而言,本實施形態中,從光源2射出的光(激發光),入射至基板構件10之背面。入射至基板構件10之光源2的光(激發光),透射過基板構件10而到達至波長轉換構件20之螢光部21。亦即,從光源2射出的激發光,從螢光部21的光入射面211入射至螢光部21。此時,螢光部21的外形尺寸,宜與從光源2射出的光入射至螢光部21時之光點尺寸(激發光之光點尺寸)成為相同。Specifically, in this embodiment, the light (excitation light) emitted from the light source 2 is incident on the back surface of the substrate member 10 . The light (excitation light) incident on the light source 2 of the substrate member 10 is transmitted through the substrate member 10 and reaches the fluorescent part 21 of the wavelength conversion member 20 . That is, the excitation light emitted from the light source 2 enters the fluorescent part 21 from the light incident surface 211 of the fluorescent part 21 . At this time, the outer dimensions of the fluorescent part 21 are preferably the same as the spot size (spot size of the excitation light) when the light emitted from the light source 2 is incident on the fluorescent part 21 .

在本實施形態,光源2的激發光為藍色光,螢光部21為黃色螢光體層。此一情況,光源2的藍色光入射至螢光部21。藉此,螢光部21之黃色螢光體(YAG螢光體),吸收光源2的藍色光之一部分而被激發,將黃色光發出為螢光。而在螢光部21,該黃色光與未被黃色螢光體吸收之光源2的藍色光混合而成為白色光,從螢光部21將該白色光作為輸出光而放射。亦即,從波長轉換構件20取出輸出光(白色光)。In this embodiment, the excitation light of the light source 2 is blue light, and the fluorescent part 21 is a yellow phosphor layer. In this case, the blue light of the light source 2 enters the fluorescent part 21 . Thereby, the yellow phosphor (YAG phosphor) of the fluorescent part 21 absorbs part of the blue light of the light source 2 and is excited, and emits yellow light as fluorescent light. In the fluorescent part 21, the yellow light is mixed with the blue light of the light source 2 that has not been absorbed by the yellow phosphor to become white light, and the white light is emitted from the fluorescent part 21 as output light. That is, the output light (white light) is taken out from the wavelength converting member 20 .

於基板構件10,形成將螢光部21所發出的黃色光反射,並使激發光的藍色光透射過之介電材料多層膜12。藉由此一構成,螢光部21所發出的黃色光中之前往光源2側的光,藉由介電材料多層膜12反射,往光源2側之相反側行進。On the substrate member 10, a dielectric material multilayer film 12 is formed that reflects the yellow light emitted by the fluorescent portion 21 and transmits the blue light of the excitation light. With this configuration, the light of the yellow light emitted by the fluorescent part 21 that goes to the light source 2 side is reflected by the dielectric material multilayer film 12 and travels to the side opposite to the light source 2 side.

此外,於螢光部21的周圍,形成白色的光反射部22。藉由此一構成,從螢光部21發出的輸出光(白色光)中之往橫向側行進的光,藉由光反射部22反射,返回螢光部21而從螢光部21放射至外部。藉此,可使從螢光部21取出的光增多。In addition, a white light reflecting portion 22 is formed around the fluorescent portion 21 . With this configuration, the light traveling toward the lateral side among the output light (white light) emitted from the fluorescent part 21 is reflected by the light reflecting part 22, returns to the fluorescent part 21, and is radiated to the outside from the fluorescent part 21. . Thereby, the amount of light taken out from the fluorescent part 21 can be increased.

此外,本實施形態中,螢光體元件1為分離式螢光粉(remote phosphor)型,螢光體元件1與光源2在空間上分離配置。藉此,可控制螢光體元件1(尤其是螢光部21)受到在光源2產生的熱之影響的情形。In addition, in this embodiment, the phosphor element 1 is a remote phosphor type, and the phosphor element 1 and the light source 2 are spatially separated and arranged. Thereby, it is possible to control the influence of the phosphor element 1 (especially the phosphor part 21 ) by the heat generated in the light source 2 .

另,於圖2中,從光源2射出的光,對基板構件10之背面垂直地入射,但亦可對基板構件10之背面斜向地入射。In addition, in FIG. 2 , the light emitted from the light source 2 is incident perpendicularly on the back surface of the substrate member 10 , but it may be incident obliquely on the back surface of the substrate member 10 .

例如,將光源模組100利用在內視鏡之情況,於螢光體元件1的上方設置導光件(未圖示),將入射至該導光件的輸出光,作為內視鏡用的光而利用。從螢光體元件1輸出的輸出光中之入射至導光件的光越多,則輸出光之利用效率越高。導光件,係由透鏡及桿狀積分器等構成的光學構件。For example, when the light source module 100 is used as an endoscope, a light guide (not shown) is provided above the phosphor element 1, and the output light incident on the light guide is used as the endoscope. Use light. The more light that is incident on the light guide member among the output light output from the phosphor element 1, the higher the utilization efficiency of the output light. The light guide is an optical component composed of lenses, rod integrators, etc.

此外,如同上述,輸出光為白色光,故本實施形態之光源模組100為白色光源模組。In addition, as mentioned above, the output light is white light, so the light source module 100 of this embodiment is a white light source module.

[與比較例之比較] 接著,針對本實施形態之螢光體元件1的作用效果,與比較例之螢光體元件1x進行比較並說明。圖3係顯示比較例之螢光體元件1x的構成之圖。 [Comparison with comparative examples] Next, the operation and effect of the phosphor element 1 of this embodiment will be described in comparison with the phosphor element 1x of the comparative example. FIG. 3 is a diagram showing the structure of the phosphor element 1x of the comparative example.

如圖3所示,比較例之螢光體元件1x,具備基板構件10、及配置於基板構件10之上方的波長轉換構件20x。此外,波長轉換構件20x,由螢光部25x與黏結劑26x構成。As shown in FIG. 3 , the phosphor element 1x of the comparative example includes a substrate member 10 and a wavelength conversion member 20x arranged above the substrate member 10 . In addition, the wavelength conversion member 20x is composed of a fluorescent part 25x and an adhesive 26x.

在如此地構成的比較例之螢光體元件1x中,如圖3所示,與上述本實施形態之螢光體元件1同樣地,藉由使激發光入射至波長轉換構件20x之螢光部25x而放射出白色光。In the phosphor element 1x of the comparative example configured in this way, as shown in FIG. 3 , in the same manner as the phosphor element 1 of the present embodiment described above, by making the excitation light incident on the fluorescent part of the wavelength conversion member 20x 25x and emits white light.

圖4係顯示本實施形態之螢光體元件1及比較例之螢光體元件1x的構成要素之表的圖。FIG. 4 is a diagram showing a table of components of the phosphor element 1 of this embodiment and the phosphor element 1x of the comparative example.

比較例之螢光體元件1x所具備的波長轉換構件20x,不同於實施形態之波長轉換構件20,並未具備光反射部22。此外,實施形態之波長轉換構件20所具備的光反射部22之密度,如圖4所示,為理論密度的81.1%。The wavelength conversion member 20x included in the phosphor element 1x of the comparative example is different from the wavelength conversion member 20 of the embodiment in that it does not include the light reflecting portion 22 . In addition, as shown in FIG. 4 , the density of the light reflection portion 22 included in the wavelength conversion member 20 of the embodiment is 81.1% of the theoretical density.

發光面積,比較例中約為0.34mm 2,實施形態中約為0.64mm 2(0.8mm×0.8mm)。此外,如圖3及圖4所示,螢光部25x為螢光體粒子,更具體而言,係由YAG構成的螢光體粒子。黏結劑26x,係用於將螢光部25x固持而黏接在基板構件10之上方的材料,例如為透明的ZnO結晶。 The light-emitting area is approximately 0.34mm 2 in the comparative example and approximately 0.64mm 2 (0.8mm×0.8mm) in the embodiment. In addition, as shown in FIGS. 3 and 4 , the fluorescent portion 25x is a phosphor particle, more specifically, a phosphor particle composed of YAG. The adhesive 26x is a material used to hold and adhere the fluorescent part 25x above the substrate member 10, and is, for example, a transparent ZnO crystal.

比較例之由螢光部25x及黏結劑26x形成的波長轉換構件20x之折射率約為1.95,螢光部21之折射率為1.83。In the comparative example, the refractive index of the wavelength conversion member 20x formed by the fluorescent part 25x and the adhesive 26x is approximately 1.95, and the refractive index of the fluorescent part 21 is 1.83.

比較例之構成螢光部25x的YAG之Ce 3+濃度約為0.1%,實施形態之構成螢光部21的YAG之Ce 3+濃度為0.01%。比較例的波長轉換構件20x之厚度約為20μm,實施形態的螢光部21之厚度為500μm以上700μm以下。此外,螢光部21之密度,為理論密度的98.8%。 The Ce 3+ concentration of the YAG constituting the fluorescent part 25x in the comparative example is approximately 0.1%, and the Ce 3+ concentration of the YAG constituting the fluorescent part 21 in the embodiment is 0.01%. The thickness of the wavelength conversion member 20x in the comparative example is approximately 20 μm, and the thickness of the fluorescent part 21 in the embodiment is 500 μm or more and 700 μm or less. In addition, the density of the fluorescent part 21 is 98.8% of the theoretical density.

於發光影像中,以漸層顯示照射了激發光之情況的亮度之分布。實施形態中,得知螢光部21之全體(即0.8mm×0.8mm的約0.64mm 2全體)均勻地發光。 In the luminescence image, the distribution of brightness when excitation light is irradiated is displayed as a gradient. In the embodiment, it was found that the entire fluorescent part 21 (that is, the entire approximately 0.64 mm 2 of 0.8 mm×0.8 mm) emits light uniformly.

此處,利用圖5,針對發光特性予以說明。圖5係顯示本實施形態之螢光體元件1及比較例之螢光體元件1x的發光特性之圖。Here, the light emission characteristics will be described using FIG. 5 . FIG. 5 is a graph showing the light emission characteristics of the phosphor element 1 of this embodiment and the phosphor element 1x of the comparative example.

圖5的橫軸,表示為了從光源2射出激發光而投入的電力(投入電力)。圖5的縱軸,表示入射至螢光體元件1及螢光體元件1x的上方所設置之導光件而從導光件射出的光之總光通量。另,以下,有將從該導光件射出的光稱作導光件光之情況。The horizontal axis of FIG. 5 represents the electric power (input electric power) input to emit the excitation light from the light source 2 . The vertical axis of FIG. 5 represents the total luminous flux of light incident on the light guide provided above the phosphor element 1 and the phosphor element 1x and emitted from the light guide. In addition, below, the light emitted from this light guide may be called light guide light.

如圖5所示,無關於投入電力,依據從螢光體元件1輸出之輸出光的導光件光之總光通量,較依據從螢光體元件1x輸出之輸出光的導光件光之總光通量更高。例如,投入電力為6W程度之情況,依據從螢光體元件1輸出之輸出光的導光件光之總光通量,較依據從螢光體元件1x輸出之輸出光的導光件光之總光通量更高30%程度。此外,例如,投入電力為13W程度之情況,依據從螢光體元件1輸出之輸出光的導光件光之總光通量,較依據從螢光體元件1x輸出之輸出光的導光件光之總光通量更高46%程度。如此地,針對本實施形態之螢光體元件1,相較於比較例之螢光體元件1x具有更高的發光特性之主要原因,於下述內容說明。As shown in FIG. 5 , regardless of the input power, the total luminous flux of the light guide light based on the output light output from the phosphor element 1 is larger than the total luminous flux of the light guide light based on the output light output from the phosphor element 1x. Higher luminous flux. For example, when the input power is about 6W, the total luminous flux of the light guide light based on the output light output from the phosphor element 1 is larger than the total luminous flux of the light guide light based on the output light output from the phosphor element 1x 30% higher. Furthermore, for example, when the input power is about 13 W, the total luminous flux of the light guide light based on the output light output from the phosphor element 1 is larger than that of the light guide light based on the output light output from the phosphor element 1x. The total luminous flux is 46% higher. In this way, the main reason why the phosphor element 1 of this embodiment has higher light emission characteristics than the phosphor element 1x of the comparative example will be described below.

於螢光體元件1,設置光反射部22。因此,從螢光部21發出的輸出光(白色光)中之往橫向側行進的光,藉由光反射部22反射,返回螢光部21而從螢光部21放射至外部。亦即,抑制從螢光部21發出的輸出光(白色光)中之往橫向側行進的光成為無法利用的光之情形。因而,依據從螢光體元件1輸出之輸出光的導光件光之總光通量變得更高。The fluorescent element 1 is provided with a light reflecting portion 22 . Therefore, among the output light (white light) emitted from the fluorescent part 21 , the light traveling toward the lateral side is reflected by the light reflecting part 22 , returns to the fluorescent part 21 , and is emitted from the fluorescent part 21 to the outside. That is, it is suppressed that the light traveling toward the lateral side among the output light (white light) emitted from the fluorescent part 21 becomes unusable light. Therefore, the total luminous flux of the light guide light based on the output light output from the phosphor element 1 becomes higher.

此外,在螢光體元件1,作為螢光部21,使用螢光體陶瓷層。因此,可改善螢光部21之耐熱性及散熱性,不易發生因熱而造成之螢光部21的發光效率之降低。尤其是,若螢光部21之密度(即YAG螢光體陶瓷之密度)位於上述範圍,則不易發生因熱而造成之螢光部21的發光效率之降低。此外,藉由使用螢光體陶瓷層作為螢光部21,而可抑制因螢光的散射所造成之光損耗,故可改善螢光部21的轉換效率。因而,依據從螢光體元件1輸出之輸出光的導光件光之總光通量變得更高。In addition, in the phosphor element 1, a phosphor ceramic layer is used as the phosphor portion 21. Therefore, the heat resistance and heat dissipation of the fluorescent part 21 can be improved, and the luminous efficiency of the fluorescent part 21 is less likely to be reduced due to heat. In particular, if the density of the fluorescent part 21 (that is, the density of the YAG phosphor ceramic) is within the above range, it is unlikely that the luminous efficiency of the fluorescent part 21 will be reduced due to heat. In addition, by using a phosphor ceramic layer as the fluorescent part 21, light loss caused by scattering of fluorescent light can be suppressed, so the conversion efficiency of the fluorescent part 21 can be improved. Therefore, the total luminous flux of the light guide light based on the output light output from the phosphor element 1 becomes higher.

如此地,本實施形態之螢光體元件1,相較於比較例之螢光體元件1x,具有更高的發光特性。In this way, the phosphor element 1 of this embodiment has higher light emission characteristics than the phosphor element 1x of the comparative example.

[色度的角度依存性] 此處,進一步針對本實施形態之螢光體元件1的輸出光之色度的角度依存性予以說明。 [Angle dependence of chromaticity] Here, the angle dependence of the chromaticity of the output light of the phosphor element 1 of this embodiment will be further described.

此處,為了針對螢光部21之Ce 3+濃度與厚度對輸出光之色度的角度依存性造成之影響進行檢討,而製作出檢討例1~檢討例7、及實施例1~實施例4之螢光體元件,即11個試樣。檢討例1~檢討例7、及實施例1~實施例4之螢光體元件,分別以使Ce 3+濃度與厚度不同的方式製作。 Here, in order to examine the influence of the Ce 3+ concentration and thickness of the fluorescent part 21 on the angle dependence of the chromaticity of the output light, Review Examples 1 to 7 and Examples 1 to 1 were produced. 4 phosphor components, i.e. 11 samples. The phosphor elements of Review Examples 1 to 7 and Examples 1 to 4 were each produced so that the Ce 3+ concentration and thickness were different.

首先,使用實施例1之螢光體元件1a,說明檢討例1~檢討例7、及實施例1~實施例4之螢光體元件的構成。First, using the phosphor element 1a of Example 1, the structures of the phosphor elements of Review Examples 1 to 7 and Examples 1 to 4 will be described.

圖6係實施例1之螢光體元件1a的剖面圖。螢光體元件1a,具備基板構件10a及螢光部21a。基板構件10a,具有從基板構件10將反射防止膜13去除之構造,亦即,具有透光基材11、及設置於透光基材11的介電材料多層膜12。此處,螢光體元件1a所具備之螢光部21a,除了和介電材料多層膜12之上方接觸設置的點、及周圍並未設置光反射部22的點以外,具有與螢光體元件1所具備之螢光部21相同的構成。另,於實施例1的螢光部21a中,Ce 3+濃度為0.01%,厚度為705μm。 FIG. 6 is a cross-sectional view of the phosphor element 1a of Example 1. The fluorescent element 1a includes a substrate member 10a and a fluorescent part 21a. The substrate member 10 a has a structure in which the anti-reflection film 13 is removed from the substrate member 10 , that is, it has a light-transmitting base material 11 and a dielectric material multilayer film 12 provided on the light-transmitting base material 11 . Here, the phosphor portion 21a of the phosphor element 1a has a structure that is in contact with the phosphor element except for the point where it is in contact with the upper side of the dielectric material multilayer film 12 and the point where the light reflection portion 22 is not provided around it. The fluorescent part 21 included in 1 has the same structure. In addition, in the fluorescent part 21a of Example 1, the Ce 3+ concentration is 0.01% and the thickness is 705 μm.

檢討例1~檢討例7、及實施例2~實施例4之螢光體元件,除了螢光部之Ce 3+濃度與厚度以外,各自具有與螢光體元件1a相同的構成。更具體而言,螢光部之Ce 3+濃度及厚度,分別在檢討例1為0.08%及225μm,在檢討例2為0.08%及125μm,在檢討例3為0.08%及57μm。此外,螢光部之Ce 3+濃度及厚度,分別在檢討例4為0.03%及666μm,在檢討例5為0.03%及400μm,在檢討例6為0.03%及300μm。此外,螢光部之Ce 3+濃度及厚度,分別在實施例2為0.01%及659μm,在實施例3為0.01%及400μm,在實施例4為0.01%及805μm,在檢討例7為0.01%及300μm。 The phosphor elements of Review Examples 1 to 7 and Examples 2 to 4 each have the same structure as the phosphor element 1a except for the Ce 3+ concentration and thickness of the phosphor part. More specifically, the Ce 3+ concentration and thickness of the fluorescent part were 0.08% and 225 μm in Review Example 1, 0.08% and 125 μm in Review Example 2, and 0.08% and 57 μm in Review Example 3, respectively. In addition, the Ce 3+ concentration and thickness of the fluorescent part were respectively 0.03% and 666 μm in Review Example 4, 0.03% and 400 μm in Review Example 5, and 0.03% and 300 μm in Review Example 6. In addition, the Ce 3+ concentration and thickness of the fluorescent part were 0.01% and 659 μm in Example 2, 0.01% and 400 μm in Example 3, 0.01% and 805 μm in Example 4, and 0.01 in Review Example 7. % and 300μm.

另,實施例1~實施例4之螢光體元件,從Ce 3+濃度與厚度的觀點來看,為相當於本實施形態之螢光體元件1的元件。 In addition, the phosphor elements of Examples 1 to 4 are equivalent to the phosphor element 1 of this embodiment from the viewpoint of Ce 3+ concentration and thickness.

此處,針對檢討例1~檢討例7、及實施例1~實施例4之螢光體元件的製造方法予以說明。表1為顯示檢討例1~檢討例7、及實施例1~實施例4之螢光體元件所使用的螢光部(YAG螢光體陶瓷)之目標組成、使用原料、及原料摻合比的表。Here, the manufacturing method of the phosphor element of Review Example 1 - Review Example 7, and Example 1 - Example 4 is demonstrated. Table 1 shows the target composition, raw materials used, and raw material blending ratios of the phosphor parts (YAG phosphor ceramics) used in the phosphor elements of Review Examples 1 to 7, and Examples 1 to 4. table.

[表1]    目標組成 Ce 3+濃度 使用原料、及原料摻合比 Y 2O 3 Al 2O 3 CeO 2 檢討例1~檢討例3 (Y 0.9992Ce 0.0008) 3Al 5O 12 0.08% 24.1990 g 18.2090 g 0.0295 g 檢討例4~檢討例6 (Y 0.9997Ce 0.0003) 3Al 5O 12 0.03% 24.2111 g 18.2090 g 0.0111 g 實施例1~實施例4、及檢討例7 (Y 0.9999Ce 0.0001) 3Al 5O 12 0.01% 24.2156 g 18.2090 g 0.0037 g [Table 1] Goal composition Ce 3+ concentration Raw materials used and raw material blending ratio Y 2 O 3 Al 2 O 3 CeO 2 Review Example 1 ~ Review Example 3 (Y 0.9992 Ce 0.0008 ) 3 Al 5 O 12 0.08% 24.1990g 18.2090g 0.0295g Review Example 4 ~ Review Example 6 (Y 0.9997 Ce 0.0003 ) 3 Al 5 O 12 0.03% 24.2111g 18.2090g 0.0111g Example 1 to Example 4, and Review Example 7 (Y 0.9999 Ce 0.0001 ) 3 Al 5 O 12 0.01% 24.2156g 18.2090g 0.0037g

首先,進行原料的調製。First, the raw materials are prepared.

針對各個試樣,分別將表1所示的各使用原料,投入至容積為1L之塑膠製容器(下稱容器)。此時,將各使用原料與氧化鋁製球珠(φ10mm)投入至容器。氧化鋁製球珠的量,為將容器的容積充填1/3之程度的量。For each sample, each raw material used shown in Table 1 was put into a plastic container (hereinafter referred to as a container) with a capacity of 1 L. At this time, each raw material and alumina beads (φ10 mm) were put into the container. The amount of alumina balls is an amount that fills approximately 1/3 of the volume of the container.

其後,將浸泡氧化鋁製球珠之程度的量之純水投入至容器。利用容器旋轉裝置(日陶科學公司製、BALL MILL ANZ-51S),施行球磨混合12小時。Then, an amount of pure water sufficient to soak the alumina beads was put into the container. Ball mill mixing was performed for 12 hours using a container rotating device (BALL MILL ANZ-51S manufactured by Nitto Scientific Co., Ltd.).

進一步,對於檢討例1~檢討例7、及實施例1~實施例3,在球磨混合後,使用乾燥機將漿狀的混合原料乾燥。具體而言,使上述混合原料,流入至以覆蓋金屬製桶之內壁的方式鋪設之NAFLON(註冊商標)片材(厚度0.05mm)的上方,將混合原料投入至設定為150℃的乾燥機6小時,進行乾燥。Furthermore, in Review Examples 1 to 7 and Examples 1 to 3, after ball milling and mixing, the slurry mixed raw materials were dried using a dryer. Specifically, the above-mentioned mixed raw materials were flowed onto a NAFLON (registered trademark) sheet (thickness 0.05 mm) laid to cover the inner wall of a metal barrel, and the mixed raw materials were put into a dryer set at 150°C. 6 hours to dry.

其後,將乾燥後的混合原料回收,藉由研缽與磨杵造粒。具體而言,將乾燥後的混合原料,投入研缽磨碎,使其成為混合原料粉。進一步,使用移液器,對混合原料粉10g少量逐次地添加0.18mL之黏結劑液(5wt.%PVA(聚乙烯醇)溶液),使用磨杵揉合。亦即,使黏結劑液分散至混合原料粉全體。其後,使用尼龍製的篩網,將混合原料粉分級,獲得造粒粉。另,使尼龍製的篩網之開孔徑為155μm。如此地,獲得檢討例1~檢討例7、及實施例1~實施例3的粉末狀之螢光部(YAG螢光體陶瓷)的原料。 此外,對於實施例4,在球磨混合後,將漿狀的混合原料藉由噴霧乾燥裝置造粒。更具體而言,將添加了0.5wt.%的黏結劑(例如PVA(聚乙烯醇))之漿狀的混合原料,藉由噴霧乾燥裝置造粒。所獲得的造粒粉之平均粒子徑為45μm。如此地,獲得實施例4的粉末狀之螢光部(YAG螢光體陶瓷)的原料。 Thereafter, the dried mixed raw materials are recovered and granulated using a mortar and pestle. Specifically, the dried mixed raw materials are put into a mortar and ground to form mixed raw material powder. Furthermore, using a pipette, 0.18 mL of a binder solution (5 wt.% PVA (polyvinyl alcohol) solution) was added in small portions to 10 g of the mixed raw material powder, and kneaded using a pestle. That is, the binder liquid is dispersed throughout the mixed raw material powder. Thereafter, the mixed raw material powder was classified using a nylon mesh to obtain granulated powder. In addition, the opening diameter of the nylon mesh was set to 155 μm. In this way, raw materials for the powdery phosphor parts (YAG phosphor ceramics) of Review Examples 1 to 7 and Examples 1 to 3 were obtained. In addition, regarding Example 4, after ball milling and mixing, the slurry mixed raw materials were granulated by a spray drying device. More specifically, a slurry mixed raw material to which 0.5 wt.% of a binder (such as PVA (polyvinyl alcohol)) is added is granulated by a spray drying device. The average particle diameter of the obtained granulated powder was 45 μm. In this way, the raw material of the powdery phosphor part (YAG phosphor ceramic) of Example 4 was obtained.

接著,進行成型。Next, molding is performed.

首先,針對檢討例1~檢討例7、及實施例1~實施例3的成型予以說明。一開始,將各原料,各自利用手動油壓機(理研精機公司製)與模具(φ13mm),模製成型為圓柱狀。使模製成型時之對試樣施加的壓力為6MPa。接著,利用冷均壓加壓(CIP(Cold Isostatic Press))裝置,使原料正式成型。使正式成型時的壓力為250MPa。另,正式成型後的成型體,以將造粒時使用之黏著劑(聚乙烯醇)去除為目的,施行去除黏結劑處理(大氣中加熱處理)。去除黏結劑處理的條件,為500℃、10小時。 接著,針對實施例4的成型予以說明。實施例4的原料,除了下述之一點以外,以與檢討例1~檢討例7、及實施例1~實施例3各自的原料同樣之方法成型。該一點,係在利用手動油壓機(理研精機公司製)時,使用模具(φ60mm)的點。 First, the molding of Review Examples 1 to 7 and Examples 1 to 3 will be described. Initially, each raw material is molded into a cylindrical shape using a manual hydraulic press (manufactured by Riken Seiki Co., Ltd.) and a mold (φ13mm). The pressure applied to the sample during molding is 6 MPa. Next, a cold isostatic press (CIP (Cold Isostatic Press)) device is used to formally shape the raw material. Let the pressure during formal molding be 250MPa. In addition, the molded body after formal molding is subjected to a binder removal process (heating treatment in the atmosphere) for the purpose of removing the binder (polyvinyl alcohol) used during granulation. The conditions for the binder removal treatment are 500°C and 10 hours. Next, the molding of Example 4 will be described. The raw material of Example 4 was molded in the same manner as the raw materials of Review Example 1 to Review Example 7 and Examples 1 to 3, respectively, except for the following points. This point is based on the use of a mold (φ60mm) when using a manual hydraulic press (manufactured by Riken Seiki Co., Ltd.).

進一步,進行煅燒。Furthermore, calcining is performed.

首先,針對檢討例1~檢討例7、及實施例1~實施例3的煅燒予以說明。將去除黏結劑處理後的成型體,分別使用縱型管狀氣氛爐煅燒。使煅燒溫度為1725℃。使煅燒時間為4小時。另,使煅燒氣體環境為97vol.%的氮與3vol.%的氫之混合氣體。此外,使混合氣體的流量為1L/分鐘。 接著,針對實施例4的煅燒予以說明。對於去除黏結劑處理後之實施例4的原料,以下述條件,使用縱型管狀氣氛爐煅燒。該條件為:煅燒溫度為1700℃以上1725℃以下、煅燒時間為4小時以上24小時以下、煅燒氣體環境為95vol.%以上97vol.%以下的氮與3vol.%以上5vol.%以下的氫之混合氣體、混合氣體的流量為1L/分鐘以上5L/分鐘以下。 First, the calcination of Review Examples 1 to 7 and Examples 1 to 3 will be described. The molded bodies after the binder removal process are separately calcined using a vertical tubular atmosphere furnace. The calcination temperature was set to 1725°C. Let the calcination time be 4 hours. In addition, the calcining gas environment was a mixed gas of 97 vol.% nitrogen and 3 vol.% hydrogen. In addition, the flow rate of the mixed gas was set to 1 L/min. Next, the calcination in Example 4 will be described. The raw material of Example 4 after the binder removal treatment was calcined using a vertical tubular atmosphere furnace under the following conditions. The conditions are: the calcination temperature is 1700°C or more and 1725°C or less, the calcination time is 4 hours or more and 24 hours or less, and the calcination gas environment is a mixture of 95 vol.% or more and 97 vol.% or less nitrogen and 3 vol.% or more and 5 vol.% or less hydrogen. The mixed gas and the flow rate of the mixed gas are 1L/min or more and 5L/min or less.

進一步,進行研磨。Further, grinding is performed.

將煅燒後的各試樣,分別使用研磨裝置(DISCO公司製、DFD6340)鏡面研磨。鏡面研磨後之厚度,使Ce 3+濃度為0.08%的試樣為225μm(檢討例1)、125μm(檢討例2)、及57μm(檢討例3)此3級別。使Ce 3+濃度為0.03%的試樣為666μm(檢討例4)、400μm(檢討例5)、及300μm(檢討例6)此3級別。使Ce 3+濃度為0.01%的試樣為705μm(實施例1)、659μm(實施例2)、400μm(實施例3)、805μm(實施例4)、及300μm(檢討例7)此4級別。 Each calcined sample was mirror-polished using a grinding device (DFD6340 manufactured by DISCO). The thickness after mirror polishing makes the sample with a Ce 3+ concentration of 0.08% fall into three levels: 225 μm (Example 1), 125 μm (Example 2), and 57 μm (Example 3). The sample with a Ce 3+ concentration of 0.03% was divided into three levels: 666 μm (Inspection Example 4), 400 μm (Inspection Example 5), and 300 μm (Inspection Example 6). The sample with a Ce 3+ concentration of 0.01% was divided into four levels: 705 μm (Example 1), 659 μm (Example 2), 400 μm (Example 3), 805 μm (Example 4), and 300 μm (Review Example 7). .

最後,進行切割。Finally, make the cut.

將研磨後的各試樣,分別使用切割裝置(DISCO公司製、DAD3350)切割。將檢討例1~檢討例7、及實施例1~實施例3的試樣,切割為一邊7mm之正方形;將實施例4的試樣,切割為一邊10mm之正方形。藉此,製作出檢討例1~檢討例7、及實施例1~實施例4的螢光部。Each polished sample was cut using a cutting device (DAD3350 manufactured by DISCO). The samples of Review Examples 1 to 7 and Examples 1 to 3 were cut into squares with a side of 7 mm. The sample of Example 4 was cut into a square with a side of 10 mm. In this way, the fluorescent parts of Review Examples 1 to 7 and Examples 1 to 4 were produced.

對於製作出的各螢光部分別評價密度。The density of each produced fluorescent part was evaluated individually.

此處,藉由阿基米德法,評價螢光部各自之密度。此外,使YAG的理論密度為4.55g/cm 3,算出螢光部各自的相對於理論密度之比率。 Here, the density of each fluorescent part is evaluated by Archimedes' method. Furthermore, assuming that the theoretical density of YAG was 4.55 g/cm 3 , the ratio of each fluorescent part to the theoretical density was calculated.

Ce 3+濃度為0.08%的試樣(檢討例1~檢討例3)、0.03%的試樣(檢討例4~檢討例6)、及0.01%的試樣(實施例1~實施例4及檢討例7)之密度,分別為4.450g/cm 3、4.476g/cm 3及4.512g/cm 3。此外,Ce 3+濃度為0.08%的試樣、0.03%的試樣、及0.01%的試樣之相對於理論密度之比率,分別為97.8%、98.4%、及99.2%。 Samples with a Ce 3+ concentration of 0.08% (Review Examples 1 to 3), 0.03% samples (Review Examples 4 to 6), and 0.01% samples (Examples 1 to 4 and The densities of review example 7) are 4.450g/cm 3 , 4.476g/cm 3 and 4.512g/cm 3 respectively. In addition, the ratios to the theoretical density of samples with Ce 3+ concentrations of 0.08%, 0.03%, and 0.01% were 97.8%, 98.4%, and 99.2%, respectively.

為了針對螢光部之Ce 3+濃度與厚度對輸出光之色度的角度依存性造成之影響進行檢討,如圖6所示,藉由分光器測定沿正面方向(下稱0°方向)及斜向(下稱45°方向)輸出的輸出光之色度。另,沿0°方向及45°方向輸出的輸出光,相當於上述入射至導光件的光。更具體而言,如同下述地測定輸出光之色度。 In order to examine the influence of the Ce 3+ concentration and thickness of the fluorescent part on the angular dependence of the chromaticity of the output light, as shown in Figure 6, a spectrometer was used to measure the angle along the front direction (hereinafter referred to as the 0° direction) and The chromaticity of the output light output in the oblique direction (hereinafter referred to as the 45° direction). In addition, the output light output in the 0° direction and the 45° direction is equivalent to the above-mentioned light incident on the light guide. More specifically, the chromaticity of the output light was measured as follows.

將切割後的各試樣,分別設置於基板構件10a之上方,製作出檢討例1~檢討例7、及實施例1~實施例4之螢光體元件。從基板構件10a側,藉由光源2將0.83W的雷射光分別照射至檢討例1~檢討例7、及實施例1~實施例4之螢光體元件。該雷射光照射光點面積為4mm 2。另,此處,透光基材11為藍寶石製之基板;檢討例1~檢討例7、及實施例1~實施例3的試樣為7mm×7mm之矩形,實施例4的試樣為10mm×10mm之矩形,厚度為500μm。進一步,介電材料多層膜12,係使藍色光透射,將480nm以上780nm以下之波長範圍的光以90%以上之反射率反射的膜。 Each cut sample was placed above the substrate member 10a, and phosphor elements of Review Examples 1 to 7 and Examples 1 to 4 were produced. From the substrate member 10a side, the phosphor elements of Review Examples 1 to 7 and Examples 1 to 4 were irradiated with laser light of 0.83W through the light source 2. The laser light irradiation spot area is 4mm 2 . In addition, here, the light-transmitting base material 11 is a substrate made of sapphire; the samples of Review Examples 1 to 7 and Examples 1 to 3 are 7mm×7mm rectangular, and the sample of Example 4 is 10mm. ×10mm rectangle, thickness 500μm. Furthermore, the dielectric material multilayer film 12 is a film that transmits blue light and reflects light in a wavelength range of 480 nm to 780 nm with a reflectivity of 90% or more.

藉由雷射光之照射,測定從檢討例1~檢討例7、及實施例1~實施例4之螢光體元件分別輸出的輸出光之色度的角度依存性。將此等輸出光,分別使用積分球(聶姆公司製)、及多通道分光器(大塚電子公司製、MCPD-7000)測定。另,此處,於各螢光體元件並未設置光反射部。然則,發明人推測,輸出光色度、及輸出光色度的角度依存性,與設置有光反射部之情況成為相同。By irradiation with laser light, the angular dependence of the chromaticity of the output light outputted from the phosphor elements of Test Examples 1 to 7 and Examples 1 to 4 was measured. These output lights were measured using an integrating sphere (manufactured by Niem Corporation) and a multi-channel spectrometer (MCPD-7000, manufactured by Otsuka Electronics Co., Ltd.). In addition, here, no light reflecting portion is provided in each phosphor element. However, the inventor speculates that the chromaticity of the output light and the angle dependence of the chromaticity of the output light are the same as when the light reflecting portion is provided.

圖7係顯示檢討例1~檢討例3之螢光體元件的輸出光之色度的角度依存性之圖。FIG. 7 is a graph showing the angle dependence of the chromaticity of the output light of the phosphor elements of Review Examples 1 to 3. FIG.

圖8係顯示檢討例4~檢討例6之螢光體元件的輸出光之色度的角度依存性之圖。FIG. 8 is a graph showing the angle dependence of the chromaticity of the output light of the phosphor elements of Review Examples 4 to 6. FIG.

圖9係顯示實施例1~實施例4及檢討例7之螢光體元件的輸出光之色度的角度依存性之圖。9 is a graph showing the angle dependence of the chromaticity of the output light of the phosphor elements of Examples 1 to 4 and Review Example 7.

另,於圖7~圖9顯示xy色度圖,於該xy色度圖分別顯示螢光體元件之0°方向及45°方向的輸出光之色度。於圖7~圖9,將表示xy色度圖之一部分的矩形之一點鏈線放大顯示。In addition, xy chromaticity diagrams are shown in FIGS. 7 to 9 , and the xy chromaticity diagrams respectively show the chromaticity of the output light of the phosphor element in the 0° direction and the 45° direction. In Figures 7 to 9, a chain of dots in a rectangle representing a part of the xy chromaticity diagram is enlarged and displayed.

此外,在圖7~圖9顯示矩形的虛線;此虛線,顯示將具備螢光體元件之光源模組例如利用在內視鏡的情況所容許之色度範圍。將該光源模組利用在內視鏡的情況,0°方向的輸出光與45°方向的輸出光雙方,作為內視鏡用的光而利用。因而,判斷為藉由使0°方向之色度與45°方向之色度雙方收斂在此一色度範圍(矩形的虛線),而可將該光源模組作為內視鏡用之發光裝置而利用。進一步,從螢光部輸出之輸出光的0°方向之色度與45°方向之色度的差分較小者(即色度的角度依存性較小者),可使從內視鏡輸出的光之色度的角度依存性小。因此,具備輸出光之色度的角度依存性小之螢光體元件的光源模組,作為內視鏡用的發光裝置,可說是性能更高。In addition, FIGS. 7 to 9 show rectangular dotted lines; this dotted line shows the allowable chromaticity range when a light source module equipped with a phosphor element is used, for example, in an endoscope. When this light source module is used in an endoscope, both the output light in the 0° direction and the output light in the 45° direction are used as light for the endoscope. Therefore, it is judged that by making both the chromaticity in the 0° direction and the chromaticity in the 45° direction converge within this chromaticity range (rectangular dotted line), the light source module can be used as a light-emitting device for endoscopes. . Furthermore, if the difference between the chromaticity of the output light output from the fluorescent part in the 0° direction and the chromaticity of the 45° direction is smaller (that is, the angle dependence of the chromaticity is smaller), the output light from the endoscope can be The angle dependence of the chromaticity of light is small. Therefore, a light source module including a phosphor element with small angular dependence of the chromaticity of the output light can be said to have higher performance as a light-emitting device for endoscopes.

此外,表2係顯示檢討例1~3之螢光體元件的輸出光之色度的xy座標之表。表3係顯示檢討例4~6之螢光體元件的輸出光之色度的xy座標之表。表4係顯示實施例1~4及檢討例7之螢光體元件的輸出光之色度的xy座標之表。In addition, Table 2 is a table showing the xy coordinates of the chromaticity of the output light of the phosphor elements of Review Examples 1 to 3. Table 3 is a table showing the xy coordinates of the chromaticity of the output light of the phosphor elements of Review Examples 4 to 6. Table 4 is a table showing the xy coordinates of the chromaticity of the output light of the phosphor elements of Examples 1 to 4 and Review Example 7.

[表2] 色度 檢討例1 0°方向 檢討例1 45°方向 檢討例2 0°方向 檢討例2 45°方向 檢討例3 0°方向 檢討例3 45°方向 x 0.39100 0.39300 0.31200 0.35100 0.18600 0.28600 y 0.52900 0.53300 0.36800 0.44900 0.09600 0.31100 [Table 2] Chroma Review example 1 0° direction Review example 1 45° direction Review example 2 0° direction Review example 2 45° direction Review example 3 0° direction Review example 3 45° direction x 0.39100 0.39300 0.31200 0.35100 0.18600 0.28600 y 0.52900 0.53300 0.36800 0.44900 0.09600 0.31100

[表3] 色度 檢討例4 0°方向 檢討例4 45°方向 檢討例5 0°方向 檢討例5 45°方向 檢討例6 0°方向 檢討例6 45°方向 x 0.40400 0.40500 0.38039 0.38062 0.35200 0.35827 y 0.55600 0.55700 0.51569 0.51677 0.45693 0.47020 [table 3] Chroma Review example 4 0° direction Review example 4 45° direction Review example 5 0° direction Review example 5 45° direction Review example 6 0° direction Review example 6 45° direction x 0.40400 0.40500 0.38039 0.38062 0.35200 0.35827 y 0.55600 0.55700 0.51569 0.51677 0.45693 0.47020

[表4] 色度 實施例1 0°方向 實施例1 45°方向 實施例2 0°方向 實施例2 45°方向 實施例3 0°方向 實施例3 45°方向 實施例4 0°方向 實施例4 45°方向 檢討例7 0°方向 檢討例7 45°方向 x 0.36400 0.36500 0.36100 0.36200 0.30851 0.31051 0.35999 0.36047 0.27464 0.28118 y 0.48300 0.48500 0.47700 0.47900 0.36660 0.37170 0.49309 0.49522 0.29282 0.30864 [Table 4] Chroma Example 1 0° direction Example 1 45° direction Example 2 0° direction Example 2 45° direction Example 3 0° direction Example 3 45° direction Example 4 0° direction Example 4 45° direction Review example 7 0° direction Review example 7 45° direction x 0.36400 0.36500 0.36100 0.36200 0.30851 0.31051 0.35999 0.36047 0.27464 0.28118 y 0.48300 0.48500 0.47700 0.47900 0.36660 0.37170 0.49309 0.49522 0.29282 0.30864

首先,利用圖7,針對螢光部之Ce 3+濃度為0.08%的最高濃度的檢討例1~檢討例3之螢光體元件予以說明。在圖7,僅檢討例2之螢光體元件,其0°方向之色度與45°方向之色度收斂在色度範圍(矩形的虛線)。然則,相較於檢討例2,在螢光部之厚度增厚100μm的檢討例1中,0°方向之色度與45°方向之色度並未收斂在色度範圍。同樣地,相較於檢討例2,在螢光部之厚度減薄68μm的檢討例3中,0°方向之色度並未收斂在色度範圍。 First, using FIG. 7 , the phosphor elements of Review Examples 1 to 3 in which the Ce 3+ concentration of the fluorescent part is the highest concentration of 0.08% will be described. In Figure 7, only the phosphor element of Example 2 was examined, and the chromaticity in the 0° direction and the chromaticity in the 45° direction converged within the chromaticity range (rectangular dotted line). However, compared to Review Example 2, in Review Example 1 in which the thickness of the fluorescent part is increased by 100 μm, the chromaticity in the 0° direction and the chromaticity in the 45° direction do not converge within the chromaticity range. Similarly, in Review Example 3 in which the thickness of the fluorescent part was reduced by 68 μm compared to Review Example 2, the chromaticity in the 0° direction did not converge within the chromaticity range.

如此地,在螢光部之Ce 3+濃度為0.08%的最高濃度之情況中,即便使螢光部之厚度改變100μm程度,仍無法使0°方向之色度與45°方向之色度雙方收斂在色度範圍。 In this way, when the Ce 3+ concentration of the fluorescent part is the highest concentration of 0.08%, even if the thickness of the fluorescent part is changed by about 100 μm, it is still impossible to achieve both the chromaticity in the 0° direction and the chromaticity in the 45° direction. Converged in the chromatic range.

且進一步,於檢討例2之螢光體元件中,亦清楚得知0°方向之色度與45°方向之色度的差分非常大。Furthermore, in the phosphor element of Review Example 2, it was also clearly found that the difference between the chromaticity in the 0° direction and the chromaticity in the 45° direction was very large.

接著,利用圖8,針對螢光部之Ce 3+濃度為0.03%的高濃度的檢討例4~檢討例6之螢光體元件予以說明。 Next, using FIG. 8 , the phosphor elements of Review Examples 4 to 6 in which the Ce 3+ concentration of the fluorescent part is a high concentration of 0.03% will be described.

在圖8,僅檢討例6之螢光體元件,其0°方向之色度與45°方向之色度收斂在色度範圍(矩形的虛線)。然則,相較於檢討例6,在螢光部之厚度增厚100μm的檢討例5、及螢光部之厚度增厚366μm的檢討例4中,0°方向之色度與45°方向之色度並未收斂在色度範圍。In Figure 8, only the phosphor element of Example 6 was examined, and the chromaticity in the 0° direction and the chromaticity in the 45° direction converged within the chromaticity range (rectangular dotted line). However, compared to Review Example 6, in Review Example 5 in which the thickness of the fluorescent part is increased by 100 μm, and in Review Example 4 in which the thickness of the fluorescent part is increased by 366 μm, the chromaticity in the 0° direction and the color in the 45° direction are The degree does not converge within the chromaticity range.

如此地,在螢光部之Ce 3+濃度為0.03%的高濃度之情況中,若螢光部之厚度改變100μm以上,則無法使0°方向之色度與45°方向之色度雙方收斂在色度範圍。 In this way, when the Ce 3+ concentration of the fluorescent part is as high as 0.03%, if the thickness of the fluorescent part changes by more than 100 μm, both the chromaticity in the 0° direction and the chromaticity in the 45° direction cannot be converged. in the chromatic range.

且進一步,於檢討例6之螢光體元件中,亦清楚得知0°方向之色度與45°方向之色度的差分非常大。Furthermore, in the phosphor element of Review Example 6, it was also clearly found that the difference between the chromaticity in the 0° direction and the chromaticity in the 45° direction was very large.

進一步,利用圖9,針對螢光部之Ce 3+濃度為0.01%的低濃度的實施例1~實施例4及檢討例7之螢光體元件予以說明。 Furthermore, the phosphor elements of Examples 1 to 4 and Test Example 7 in which the Ce 3+ concentration of the fluorescent part is as low as 0.01% will be described using FIG. 9 .

如圖9所示,實施例1~實施例4之全部的螢光體元件,其0°方向之色度與45°方向之色度收斂在色度範圍(矩形的虛線)。不同於圖7及圖8所示的檢討例1~檢討例6,在實施例1~實施例4之螢光體元件中,即便螢光部之厚度大幅改變400nm~805nm,2個方向之色度仍收斂在色度範圍。亦即,顯示「在螢光部之Ce 3+濃度為0.01%的低濃度的實施例1~實施例4之螢光體元件中,即便螢光部之厚度改變,2個方向之色度仍不易改變」。 As shown in FIG. 9 , for all the phosphor elements of Examples 1 to 4, the chromaticity in the 0° direction and the chromaticity in the 45° direction converge within the chromaticity range (rectangular dotted line). Different from Review Examples 1 to 6 shown in Figures 7 and 8, in the phosphor elements of Examples 1 to 4, even if the thickness of the phosphor portion is significantly changed from 400 nm to 805 nm, the colors in the two directions are The degree still converges within the chromaticity range. That is, it is shown that “in the phosphor elements of Examples 1 to 4 in which the Ce 3+ concentration of the phosphor part is as low as 0.01%, even if the thickness of the phosphor part changes, the chromaticity in the two directions remains the same. Not easy to change".

此外,清楚得知在檢討例7之螢光體元件中,其0°方向之色度與45°方向之色度收斂在色度範圍(矩形的虛線),但0°方向之色度與45°方向之色度的差分非常大。另一方面,顯示「在實施例1~實施例4之全部螢光體元件中,0°方向之色度與45°方向之色度的差分非常小,亦即色度的角度依存性小」。In addition, it is clear that in the phosphor element of Review Example 7, the chromaticity in the 0° direction and the chromaticity in the 45° direction converge within the chromaticity range (dashed line of the rectangle), but the chromaticity in the 0° direction is different from that of 45°. The difference in chromaticity in the ° direction is very large. On the other hand, it is shown that "in all the phosphor elements of Examples 1 to 4, the difference between the chromaticity in the 0° direction and the chromaticity in the 45° direction is very small, that is, the angle dependence of the chromaticity is small." .

此處,進一步針對色度的角度依存性,將展現同程度之色度的檢討例6之螢光體元件(參考圖8)、及實施例2之螢光體元件(參考圖9)進行比較。實施例2之螢光體元件之色度的角度依存性,較檢討例6之螢光體元件之色度的角度依存性更小。亦即,顯示「在同程度之色度的範圍中,螢光部之Ce 3+濃度非常低的實施例2之螢光體元件,其色度的角度依存性更小」。 Here, regarding the angular dependence of chromaticity, a comparison is made between the phosphor element of Review Example 6 (refer to Figure 8) and the phosphor element of Example 2 (refer to Figure 9), which exhibit the same level of chromaticity. . The angular dependence of the chromaticity of the phosphor element of Example 2 is smaller than the angular dependence of the chromaticity of the phosphor element of Examination Example 6. That is, it is shown that "within the same range of chromaticity, the phosphor element of Example 2, which has a very low Ce 3+ concentration in the phosphor part, has smaller angle dependence of chromaticity."

如此地,實施例1~實施例4中,藉由使Ce 3+濃度為0.01%、厚度為350μm以上820μm以下,而實現輸出光之色度的角度依存性較檢討例1~檢討例7更小之螢光體元件。利用圖10A,針對此一原理予以說明。 In this way, in Examples 1 to 4, by setting the Ce 3+ concentration to 0.01% and the thickness to 350 μm or more and 820 μm or less, the angular dependence of the chromaticity of the output light is better than that in Review Examples 1 to 7. Small phosphor components. This principle will be explained using Figure 10A.

圖10A係示意Ce 3+濃度及厚度對激發光及螢光造成之影響的圖。 Figure 10A is a diagram illustrating the effects of Ce 3+ concentration and thickness on excitation light and fluorescence.

於圖10A中,示意變更Ce 3+濃度及厚度後之螢光部、及到達至螢光部的激發光(藍色光)及螢光(黃色光)。表示藍色光的實線箭頭與表示黃色光的虛線箭頭之長度的比,顯示輸出光之藍色光強度與黃色光強度的比。 In FIG. 10A , the fluorescent part after changing the Ce 3+ concentration and thickness, and the excitation light (blue light) and fluorescent light (yellow light) reaching the fluorescent part are illustrated. The ratio of the lengths of the solid arrows representing blue light and the dashed arrows representing yellow light shows the ratio of the blue light intensity to the yellow light intensity of the output light.

於圖10A中,Ce 3+濃度高且厚度厚之螢光部,相當於檢討例4;Ce 3+濃度高且厚度薄之螢光部,相當於檢討例6。此外,Ce 3+濃度低且厚度厚之螢光部,相當於實施例2;Ce 3+濃度低且厚度薄之螢光部,相當於檢討例7。 In Figure 10A, the fluorescent part with high Ce 3+ concentration and thick thickness is equivalent to review example 4; the fluorescent part with high Ce 3+ concentration and thin thickness is equivalent to review example 6. In addition, the fluorescent part with low Ce 3+ concentration and thick thickness corresponds to Example 2; the fluorescent part with low Ce 3+ concentration and thin thickness corresponds to Review Example 7.

另,即便為相同厚度之螢光部,在Ce 3+濃度較高者,虛線箭頭(黃色光)之長度更長,即輸出光之黃色光強度更大。此係因Ce 3+濃度較高者,藍色光之吸收率更高、更容易轉換為黃色光的緣故。同樣地,即便為相同Ce 3+濃度之螢光部,在厚度較厚者,虛線箭頭(黃色光)之長度更長,即輸出光之黃色光強度更大。此係因厚度較厚者,更容易吸收藍色光、更容易轉換為黃色光的緣故。 In addition, even if the fluorescent part has the same thickness, the length of the dotted arrow (yellow light) is longer when the Ce 3+ concentration is higher, that is, the yellow light intensity of the output light is greater. This is because those with a higher Ce 3+ concentration have a higher absorption rate of blue light and are easier to convert into yellow light. Similarly, even for fluorescent parts with the same Ce 3+ concentration, if the thickness is thicker, the length of the dotted arrow (yellow light) is longer, that is, the yellow light intensity of the output light is greater. This is because thicker ones are more likely to absorb blue light and convert it into yellow light.

在檢討例4,於0°方向與45°方向,實線箭頭(藍色光)之長度與虛線箭頭(黃色光)之長度的比之差小,故色度的角度依存性小。然則,由於黃色光之強度高,故輸出光幾乎成為黃色光,如圖8所示, 0°方向之色度與45°方向之色度並未收斂在色度範圍。In Review Example 4, in the 0° direction and the 45° direction, the difference in the ratio between the length of the solid arrow (blue light) and the length of the dotted arrow (yellow light) is small, so the angular dependence of the chromaticity is small. However, due to the high intensity of yellow light, the output light is almost yellow light. As shown in Figure 8, the chromaticity in the 0° direction and the chromaticity in the 45° direction do not converge within the chromaticity range.

在檢討例6,相較於檢討例4,在0°方向與45°方向,黃色光之強度更低,故輸出光成為接近白色的光。然則,在0°方向與45°方向,實線箭頭(藍色光)之長度與虛線箭頭(黃色光)之長度的比不同,故色度的角度依存性大。In Review Example 6, compared to Review Example 4, the intensity of yellow light is lower in the 0° direction and the 45° direction, so the output light is close to white light. However, the ratio of the length of the solid arrow (blue light) to the length of the dotted arrow (yellow light) is different in the 0° direction and the 45° direction, so the angle dependence of chromaticity is large.

在實施例2,相較於檢討例6,在0°方向與45°方向,黃色光之強度更低,故輸出光成為接近白色的光。進一步,在0°方向與45°方向,實線箭頭(藍色光)之長度與虛線箭頭(黃色光)之長度的比之差小,故色度的角度依存性小。In Example 2, compared to Review Example 6, the intensity of yellow light is lower in the 0° direction and the 45° direction, so the output light is close to white light. Furthermore, in the 0° direction and the 45° direction, the difference in the ratio between the length of the solid arrow (blue light) and the length of the dotted arrow (yellow light) is small, so the angular dependence of the chromaticity is small.

在檢討例7,相較於檢討例6,在0°方向與45°方向,藍色光之強度更高,故輸出光成為包含大量藍色光之白色的光。然則,在0°方向與45°方向,實線箭頭(藍色光)之長度與虛線箭頭(黃色光)之長度的比不同,故色度的角度依存性大。In Review Example 7, compared to Review Example 6, the intensity of blue light is higher in the 0° direction and the 45° direction, so the output light becomes white light containing a large amount of blue light. However, the ratio of the length of the solid arrow (blue light) to the length of the dotted arrow (yellow light) is different in the 0° direction and the 45° direction, so the angle dependence of chromaticity is large.

如此地,藉由控制螢光部之Ce 3+濃度及厚度雙方,在實施例1~實施例4中,相較於檢討例1~檢討例7,實現了輸出光之色度的角度依存性小之螢光體元件。 In this way, by controlling both the Ce 3+ concentration and the thickness of the fluorescent part, in Examples 1 to 4, compared with Review Examples 1 to 7, angle dependence of the chromaticity of the output light was achieved. Small phosphor components.

如圖7~圖9所示,亦清楚得知於檢討例1~檢討例7中,不易使0°方向之色度與45°方向之色度雙方收斂在色度範圍、0°方向之色度與45°方向之色度的差分非常大。尤其是如圖7及圖8所示,在Ce 3+濃度非常高的範圍中,存在僅因厚度改變100μm程度,而使輸出光之色度大幅改變、0°方向之色度與45°方向之色度的差分非常大等問題。 As shown in Figures 7 to 9, it is also clear that in Review Examples 1 to 7, it is difficult to make both the chromaticity in the 0° direction and the chromaticity in the 45° direction converge within the chromaticity range and the color in the 0° direction. The difference between the chromaticity and the chromaticity in the 45° direction is very large. Especially as shown in Figures 7 and 8, in the range where the Ce 3+ concentration is very high, there is a significant change in the chromaticity of the output light due to a thickness change of about 100 μm. The chromaticity in the 0° direction is different from the chromaticity in the 45° direction. The difference in chromaticity is very large and other issues.

對於此等問題,經過屢次用心檢討之結果,本案發明人等,發現依據圖10A所示的機制,實現了0°方向及45°方向之色度收斂在色度範圍、且色度的角度依存性小的實施例1~實施例4之螢光體元件。Regarding these problems, after repeated careful review, the inventors of the present case found that according to the mechanism shown in Figure 10A, the chromaticity in the 0° direction and the 45° direction is achieved to converge within the chromaticity range, and the chromaticity is angle-dependent. The phosphor elements of Examples 1 to 4 have low resistance.

另,如同上述,實施例1~實施例4之螢光體元件,從Ce 3+濃度與厚度的觀點來看,為相當於本實施形態之螢光體元件1的元件。因此,與實施例1~實施例4之螢光體元件相同,本實施形態之螢光體元件1,亦成為0°方向及45°方向之色度收斂在色度範圍,且色度的角度依存性小之螢光體元件。 As mentioned above, the phosphor elements of Examples 1 to 4 are equivalent to the phosphor element 1 of this embodiment from the viewpoint of Ce 3+ concentration and thickness. Therefore, like the phosphor elements of Examples 1 to 4, in the phosphor element 1 of this embodiment, the chromaticity in the 0° direction and the 45° direction converges within the chromaticity range, and the angle of the chromaticity Little dependence on phosphor components.

[螢光部之厚度及表面粗糙度的影響] 此處,進一步針對螢光部21(即YAG螢光體陶瓷)之厚度及表面粗糙度對螢光體元件1的特性造成之影響予以說明。首先,針對螢光部21之厚度的影響予以檢討。 [Influence of the thickness and surface roughness of the fluorescent part] Here, the influence of the thickness and surface roughness of the phosphor part 21 (ie, YAG phosphor ceramic) on the characteristics of the phosphor element 1 will be further described. First, the influence of the thickness of the fluorescent part 21 is examined.

為了對螢光部21之厚度的影響進行檢討,製作出9種試樣(9種螢光體元件)。此9種試樣,螢光部之厚度分別不同。 9種試樣中之6種試樣,具有與圖1所示之螢光體元件1相同的構成,即該6種試樣的螢光部21之厚度為350μm以上820μm以下。具體而言,該6種試樣的螢光部21之設計厚度,分別為575μm、641μm、680μm、747μm、753μm及802μm。另,以下,有將螢光部21之設計厚度為575μm的試樣稱作試樣575μm,將設計厚度為641μm的試樣稱作試樣641μm,將設計厚度為680μm的試樣稱作試樣680μm,將設計厚度為747μm的試樣稱作試樣747μm,將設計厚度為753μm的試樣稱作試樣753μm,及將設計厚度為802μm的試樣稱作試樣802μm之情況。 此外,9種試樣之剩下的3種試樣,除了螢光部之厚度不同的點以外,具有與圖1所示之螢光體元件1相同的構成,此處,該3種試樣的螢光部之厚度較820μm更大。具體而言,該3種試樣的螢光部之設計厚度為826μm、873μm及918μm。另,以下有將螢光部之設計厚度為826μm的試樣稱作試樣826μm,將設計厚度為873μm的試樣稱作試樣873μm,及將設計厚度為918μm的試樣稱作試樣918μm之情況。 In order to examine the influence of the thickness of the fluorescent part 21, 9 types of samples (9 types of phosphor elements) were produced. These 9 types of samples have different thicknesses of the fluorescent part. Six types of samples among the nine types of samples have the same structure as the phosphor element 1 shown in FIG. 1 , that is, the thickness of the fluorescent portion 21 of these six types of samples is 350 μm or more and 820 μm or less. Specifically, the designed thicknesses of the fluorescent parts 21 of the six samples are 575 μm, 641 μm, 680 μm, 747 μm, 753 μm, and 802 μm respectively. In the following, the sample with the designed thickness of the fluorescent part 21 of 575 μm is called the sample 575 μm, the sample with the designed thickness of 641 μm is called the sample 641 μm, and the sample with the designed thickness of 680 μm is called the sample. 680 μm, a sample with a design thickness of 747 μm is called a sample 747 μm, a sample with a design thickness of 753 μm is called a sample 753 μm, and a sample with a design thickness of 802 μm is called a sample 802 μm. In addition, the remaining three types of samples among the nine types of samples have the same structure as the phosphor element 1 shown in FIG. 1 except that the thickness of the phosphor part is different. Here, these three types of samples The thickness of the fluorescent part is larger than 820μm. Specifically, the design thicknesses of the fluorescent parts of the three samples are 826 μm, 873 μm, and 918 μm. In the following, the sample with a designed thickness of the phosphor part of 826 μm is called sample 826 μm, the sample with a designed thickness of 873 μm is called sample 873 μm, and the sample with a designed thickness of 918 μm is called sample 918 μm. situation.

此處,針對此9種試樣之製造方法予以說明。首先,製作出使用在9種試樣各自之螢光部的YAG螢光體陶瓷。使用在螢光部的YAG螢光體陶瓷之目標組成,與在實施例1~實施例4及檢討例7之螢光體元件使用的YAG螢光體陶瓷相同。此外,使用在螢光部的YAG螢光體陶瓷,在至施行煅燒之步驟(煅燒步驟)為止前,以與在實施例4之螢光體元件使用的YAG螢光體陶瓷相同之方法製作。將施行至煅燒步驟為止的YAG螢光體陶瓷,之後使用研磨裝置(DISCO公司製、DFD6340)及切割裝置(DISCO公司製、DAD3350),形狀加工成為縱長0.8mm、橫寬0.8mm、高度1mm以上。接著,準備模具(φ13mm),將平均一次粒子徑為0.28μm的Al 2O 3粉末投入至該模具。其後,將形狀加工後的YAG螢光體陶瓷,配置於填滿了模具的Al 2O 3粉末中。另,此時,將形狀加工後的YAG螢光體陶瓷,於填滿了模具的Al 2O 3粉末之中心附近,以使高度方向與地面成為略垂直的方式配置。而後,利用手動油壓機(理研精機公司製),模製成型為略圓柱狀。使模製成型時對試樣施加的壓力為6MPa。接著,利用冷均壓加壓(CIP(Cold Isostatic Press))裝置施行正式成型。使正式成型時的壓力為250MPa。如此地,將形狀加工後的YAG螢光體陶瓷,配置於Al 2O 3粉末中,製作複合成型體。將製作出的複合成型體,使用箱型大氣氣氛爐煅燒。使煅燒溫度為1200℃~1300℃。使煅燒時間為2小時。如此地,製作出由形狀加工後之YAG螢光體陶瓷與Al 2O 3陶瓷形成的複合陶瓷。將製作出的複合陶瓷,使用研磨裝置(DISCO公司製、DFD6340),變更為9種厚度。將厚度變更後的9種複合陶瓷,分別使用切割裝置(DISCO公司製、DAD3350),以將YAG螢光體陶瓷配置於略中心之方式,形狀加工為縱長7.0mm、橫寬7.0mm的正方形。而後,將形狀加工後的複合陶瓷,分別載置於具有介電材料多層膜及反射防止膜之透光基材,製作上述9種試樣。另,試樣575μm、試樣641μm、試樣680μm、試樣747μm、試樣753μm及試樣802μm為具有與圖1所示之螢光體元件1相同的構成之螢光體元件,亦即,為相當於螢光體元件1的試樣。 Here, the manufacturing methods of these 9 types of samples are explained. First, YAG phosphor ceramics used in the phosphor parts of each of the nine samples were produced. The target composition of the YAG phosphor ceramic used in the fluorescent part is the same as the YAG phosphor ceramic used in the phosphor elements of Examples 1 to 4 and Review Example 7. In addition, the YAG phosphor ceramic used in the phosphor part was produced by the same method as the YAG phosphor ceramic used in the phosphor element of Example 4 until the calcining step (calcining step) was performed. The YAG phosphor ceramic that has been subjected to the calcination step is then processed into a shape of 0.8 mm in length, 0.8 mm in width, and 1 mm in height using a grinding device (DFD6340 made by DISCO) and a cutting device (DAD3350 made by DISCO). above. Next, a mold (φ13 mm) was prepared, and Al 2 O 3 powder with an average primary particle diameter of 0.28 μm was put into the mold. Thereafter, the shape-processed YAG phosphor ceramic was placed in the Al 2 O 3 powder filled in the mold. In addition, at this time, the shaped YAG phosphor ceramic was placed near the center of the Al 2 O 3 powder filled in the mold so that the height direction was approximately perpendicular to the ground. Then, it is molded into a roughly cylindrical shape using a manual hydraulic press (manufactured by Riken Seiki Co., Ltd.). The pressure applied to the sample during molding was set to 6 MPa. Next, formal molding is carried out using a cold isostatic press (CIP) device. Let the pressure during formal molding be 250MPa. In this way, the shape-processed YAG phosphor ceramic was placed in the Al 2 O 3 powder to produce a composite molded body. The produced composite molded body is calcined using a box-type atmospheric atmosphere furnace. The calcining temperature is 1200°C to 1300°C. Let the calcination time be 2 hours. In this way, a composite ceramic composed of the shape-processed YAG phosphor ceramic and the Al 2 O 3 ceramic was produced. The produced composite ceramics were changed into nine thicknesses using a grinding device (DFD6340 manufactured by DISCO). The nine types of composite ceramics with changed thicknesses were each processed into a square shape with a length of 7.0 mm and a width of 7.0 mm using a cutting device (DAD3350 manufactured by DISCO) with the YAG phosphor ceramic placed approximately in the center. . Then, the shape-processed composite ceramics were placed on a light-transmitting substrate with a dielectric material multilayer film and an anti-reflective film, respectively, to prepare the above nine types of samples. In addition, sample 575 μm, sample 641 μm, sample 680 μm, sample 747 μm, sample 753 μm, and sample 802 μm are phosphor elements having the same structure as the phosphor element 1 shown in FIG. 1 , that is, This is a sample corresponding to the phosphor element 1.

此9種試樣,為各自變更了螢光部之厚度(圖1的上下方向之厚度)的試樣。測定從9種試樣分別輸出的輸出光之總光通量。These nine types of samples are samples in which the thickness of the fluorescent part (thickness in the vertical direction in Figure 1) was changed. The total luminous flux of the output light outputted from each of the nine types of samples was measured.

圖10B係顯示螢光部之厚度分別不同的9種試樣的輸出光之總光通量的圖。此處,測定為了射出激發光而投入的電力為5.2W時之9種試樣各自的輸出光之總光通量。 表5為顯示9種試樣的螢光部之厚度與輸出光之總光通量的表。 [表5] 螢光部厚度(μm) 575 641 680 747 753 802 826 873 918 總光通量(lm) 1262 1246 1275 1288 1274 1275 1219 1258 1373 如圖10B及表5所示,清楚得知從9種試樣輸出的輸出光之總光通量,皆為930lm以上,更具體而言,皆為1200lm以上。進一步,展現若螢光部之厚度越厚,則總光通量變得越高的傾向。 FIG. 10B is a graph showing the total luminous flux of the output light of nine samples with different thicknesses of the fluorescent parts. Here, the total luminous flux of the output light of each of the nine samples was measured when the power input to emit the excitation light was 5.2 W. Table 5 is a table showing the thickness of the fluorescent part and the total luminous flux of the output light of nine types of samples. [table 5] Fluorescent part thickness (μm) 575 641 680 747 753 802 826 873 918 Total luminous flux (lm) 1262 1246 1275 1288 1274 1275 1219 1258 1373 As shown in Figure 10B and Table 5, it is clear that the total luminous flux of the output light output from the nine types of samples is all above 930 lm, more specifically, all is above 1200 lm. Furthermore, it was shown that the total luminous flux tends to become higher as the thickness of the fluorescent part becomes thicker.

另,在將具備本實施形態之螢光體元件1的光源模組100例如利用在內視鏡之情況,要求從螢光體元件1輸出的輸出光之總光通量為930lm以上。螢光部21之厚度為350μm以上820μm以下的6種試樣(即試樣575μm、試樣641μm、試樣680μm、試樣747μm、試樣753μm及試樣802μm),如同上述,為相當於本實施形態之螢光體元件1的試樣;該6種試樣的輸出光之總光通量,皆為930lm以上。因此,本實施形態之螢光體元件1(該6種試樣的每一種),係輸出光之總光通量高至可利用在內視鏡之程度的元件。另,螢光部之厚度較820μm更大的3種試樣,從總光通量之觀點來看,亦為輸出光之總光通量高至可利用在內視鏡之程度的試樣。 另,已利用圖9等,顯示本實施形態之螢光體元件1,係0°方向及45°方向之色度收斂在色度範圍,且色度的角度依存性小之螢光體元件。因此,本實施形態中,藉由使Ce 3+濃度為0.01%、厚度為350μm以上820μm以下,而實現輸出光之色度的角度依存性小,且輸出光之總光通量高的螢光體元件1。 In addition, when the light source module 100 including the phosphor element 1 of this embodiment is used in an endoscope, for example, the total luminous flux of the output light output from the phosphor element 1 is required to be 930 lm or more. The six types of samples (i.e., sample 575 μm, sample 641 μm, sample 680 μm, sample 747 μm, sample 753 μm, and sample 802 μm) with a thickness of 350 μm or more and 820 μm or less of the fluorescent part 21 are equivalent to the present invention. Samples of the phosphor element 1 of the embodiment; the total luminous flux of the output light of these six samples is all 930 lm or more. Therefore, the phosphor element 1 of this embodiment (each of the six types of samples) is an element whose total luminous flux of output light is high enough to be usable in an endoscope. In addition, from the perspective of the total luminous flux, the three samples with the thickness of the fluorescent part larger than 820 μm are also samples in which the total luminous flux of the output light is high enough to be used in an endoscope. In addition, it has been shown with reference to FIG. 9 and others that the phosphor element 1 of this embodiment is a phosphor element in which the chromaticity in the 0° direction and the 45° direction converges within the chromaticity range, and the angular dependence of the chromaticity is small. Therefore, in this embodiment, by setting the Ce 3+ concentration to 0.01% and the thickness to 350 μm or more and 820 μm or less, a phosphor element with a small angle dependence of the chromaticity of the output light and a high total luminous flux of the output light is realized. 1.

進一步,測定從9種試樣各自輸出的輸出光之色溫。 圖10C係顯示螢光部之厚度分別不同的9種試樣之色溫的圖。此外,於圖10C,將依據9種試樣之色溫而藉由最小平方法算出的近似直線,以一點鏈線表示。 表6為顯示9種試樣的螢光部之厚度與輸出光之色溫的表。 [表6] 螢光部厚度(μm) 575 641 680 747 753 802 826 873 918 色溫(K) 6606 6144 5910 5709 5557 5481 5422 5245 4995 如圖10C及表6所示,清楚得知從9種試樣輸出的輸出光之色溫,皆為4500K以上7000K以下。進一步,展現若螢光部之厚度越厚,則色溫變得越小的傾向。 Furthermore, the color temperature of the output light output from each of the nine types of samples was measured. FIG. 10C is a graph showing the color temperatures of nine samples with different thicknesses of the fluorescent parts. In addition, in FIG. 10C , the approximate straight line calculated by the least squares method based on the color temperatures of the nine samples is represented by a one-dot chain line. Table 6 is a table showing the thickness of the fluorescent part and the color temperature of the output light of nine types of samples. [Table 6] Fluorescent part thickness (μm) 575 641 680 747 753 802 826 873 918 Color temperature(K) 6606 6144 5910 5709 5557 5481 5422 5245 4995 As shown in Figure 10C and Table 6, it is clear that the color temperatures of the output light output from the nine types of samples are all above 4500K and below 7000K. Furthermore, it was shown that the color temperature tends to become smaller as the thickness of the fluorescent part becomes thicker.

將具備本實施形態之螢光體元件1的光源模組100,例如利用在內視鏡之情況,從螢光體元件1輸出的輸出光之色溫,宜為3500K以上15000K以下,更宜為4500K以上7000K以下,進一步宜位於5050K以上5810K以下的範圍。螢光部21之厚度為747μm以上802μm以下的3種試樣(即試樣747μm、試樣753μm及試樣802μm),如同上述,為相當於本實施形態之螢光體元件1的試樣。該3種試樣的輸出光之色溫,皆為5050K以上5810K以下,亦即皆為位於上述較適宜的範圍內之值。此外,利用圖10C的近似直線算出,若為螢光部之厚度為726μm以上902μm以下的範圍之試樣,則推定為色溫成為上述較適宜的範圍內之值。另,色溫因螢光部之厚度的變化而變化之現象,如同在圖10A等所說明之內容。如此地,本實施形態之螢光體元件1(例如該3種試樣),藉由使螢光部21之厚度為726μm以上820μm以下,而使輸出光之色溫成為較適宜的範圍,且如圖9所示,輸出光之色度的角度依存性小。因此,本實施形態之螢光體元件1,更容易利用在內視鏡。另,螢光部21之厚度,並未限定於上述形態,亦可為750μm以上820μm以下,亦可為770μm以上820μm以下,亦可為790μm以上820μm以下。When the light source module 100 including the phosphor element 1 of this embodiment is used as an endoscope, for example, the color temperature of the output light output from the phosphor element 1 is preferably 3500K or more and 15000K or less, more preferably 4500K. Above 7000K and below, it should further be in the range above 5050K and below 5810K. The three types of samples (namely, sample 747 μm, sample 753 μm, and sample 802 μm) in which the thickness of the fluorescent part 21 is 747 μm or more and 802 μm or less are, as described above, equivalent to the phosphor element 1 of this embodiment. The color temperatures of the output light of these three samples are all above 5050K and below 5810K, that is, they are all values within the above-mentioned more suitable range. In addition, calculated using the approximate straight line in FIG. 10C , if the thickness of the fluorescent part is in the range of 726 μm or more and 902 μm or less, it is estimated that the color temperature is a value within the above-mentioned more suitable range. In addition, the phenomenon that the color temperature changes due to the change in the thickness of the fluorescent part is as explained in FIG. 10A and so on. In this way, in the phosphor element 1 of this embodiment (for example, these three types of samples), by setting the thickness of the phosphor part 21 to 726 μm or more and 820 μm or less, the color temperature of the output light can be in a more appropriate range, and as follows As shown in Figure 9, the angle dependence of the chromaticity of the output light is small. Therefore, the phosphor element 1 of this embodiment can be more easily used in an endoscope. In addition, the thickness of the fluorescent part 21 is not limited to the above-mentioned form. It may be 750 μm or more and 820 μm or less, it may be 770 μm or more and 820 μm or less, or it may be 790 μm or more and 820 μm or less.

接著,針對螢光部21之表面粗糙度的影響進行檢討。Next, the influence of the surface roughness of the fluorescent part 21 is examined.

為了進行關於螢光部21之表面粗糙度的影響之檢討,而製作具有與圖1所示之螢光體元件1相同的構成之4種試樣。此4種試樣,係分別各自將螢光部21的光入射面211及光出射面212之表面粗糙度變更後的試樣。 此處,針對此4種試樣之製造方法予以說明。首先,製作出使用在4種試樣各自之螢光部21的YAG螢光體陶瓷。使用在螢光部21的YAG螢光體陶瓷之目標組成,與在實施例1~實施例4及檢討例7之螢光體元件使用的YAG螢光體陶瓷相同。此外,使用在螢光部21的YAG螢光體陶瓷,在至施行煅燒之步驟(煅燒步驟)為止前,以與在實施例1~實施例3及檢討例7之螢光體元件使用的YAG螢光體陶瓷相同之方法製作。關於此4種試樣的煅燒步驟以後之步驟,係藉由與上述9種試樣相同之步驟製作,除了在複合陶瓷之研磨步驟中變更砂輪的粒度以外,以與上述9種試樣之製造方法相同的方法製作。而後,測定從4種試樣分別輸出的輸出光之總光通量。 In order to examine the influence of the surface roughness of the fluorescent part 21, four types of samples having the same structure as the fluorescent element 1 shown in FIG. 1 were produced. These four types of samples were obtained by changing the surface roughness of the light incident surface 211 and the light exit surface 212 of the fluorescent part 21 respectively. Here, the manufacturing methods of these four types of samples are explained. First, YAG phosphor ceramics used in the phosphor portions 21 of each of the four types of samples were produced. The target composition of the YAG phosphor ceramic used in the phosphor part 21 is the same as the YAG phosphor ceramic used in the phosphor elements of Examples 1 to 4 and Review Example 7. In addition, the YAG phosphor ceramic used in the phosphor part 21 was used in the phosphor elements of Examples 1 to 3 and Review Example 7 until the calcining step (calcining step) was performed. Fluorescent ceramics are made in the same way. Regarding the steps after the calcination step of these four types of samples, they are produced through the same steps as the above-mentioned nine types of samples, except that the particle size of the grinding wheel is changed in the grinding step of the composite ceramics. Made in the same way. Then, the total luminous flux of the output light outputted from each of the four types of samples was measured.

圖10D係顯示螢光部21之表面粗糙度分別不同之4種試樣的輸出光之總光通量的圖。此處,測定使為了射出激發光而投入的電力為5.2W時之4種試樣各自的輸出光之總光通量。FIG. 10D is a graph showing the total luminous flux of the output light of four types of samples with different surface roughness of the fluorescent part 21 . Here, the total luminous flux of the output light of each of the four types of samples was measured when the power input to emit the excitation light was 5.2 W.

此外,4種試樣,藉由如同下述地研磨,而使各自之表面粗糙度不同。製作出將光出射面212以砂輪粒度1400號研磨,並將光入射面211以砂輪粒度8000號研磨的試樣(下稱試樣(1400/8000))。製作出將光出射面212以砂輪粒度600號研磨,並將光入射面211以砂輪粒度600號研磨的試樣(下稱試樣(600/600))。製作出將光出射面212以砂輪粒度1400號研磨,並將光入射面211以砂輪粒度1400號研磨的試樣(下稱試樣(1400/1400))。製作出將光出射面212以砂輪粒度4000號研磨,並將光入射面211以砂輪粒度4000號研磨的試樣(下稱試樣(4000/4000))。In addition, the surface roughness of each of the four types of samples was made different by grinding as follows. A sample (hereinafter referred to as sample (1400/8000)) was produced in which the light exit surface 212 was ground with a grinding wheel grit of No. 1400, and the light incident surface 211 was ground with a grinding wheel grit of No. 8000. A sample (hereinafter referred to as sample (600/600)) was produced in which the light exit surface 212 was ground with a grinding wheel grit of No. 600, and the light incident surface 211 was ground with a grinding wheel grit of No. 600. A sample (hereinafter referred to as sample (1400/1400)) was produced in which the light exit surface 212 was ground with a grinding wheel grit of No. 1400, and the light incident surface 211 was ground with a grinding wheel grit of No. 1400. A sample (hereinafter referred to as sample (4000/4000)) was produced in which the light exit surface 212 was ground with a grinding wheel grit of No. 4000, and the light incident surface 211 was ground with a grinding wheel grit of No. 4000.

此外,將試樣(1400/8000)製作2個、試樣(600/600)製作2個、試樣(1400/1400)製作2個、並將試樣(4000/4000)製作3個。In addition, two samples (1400/8000), two samples (600/600), two samples (1400/1400), and three samples (4000/4000) were produced.

此外,圖10D的橫軸,顯示4種試樣各自的光出射面212之研磨所使用的砂輪粒度。進一步,於圖10D,顯示砂輪粒度與表面粗糙度(更具體而言,算術平均粗糙度Ra)的相關性。亦即,試樣(600/600)的光出射面212及光入射面211各自之Ra為145nm。試樣(1400/1400)的光出射面212及光入射面211各自之Ra為137nm。試樣(1400/8000)的光出射面212之Ra為137nm。另,試樣(1400/8000)的光入射面211之Ra為11nm。試樣(4000/4000)的光出射面212及光入射面211各自之Ra為20nm。In addition, the horizontal axis of FIG. 10D shows the grit size of the grinding wheel used for grinding the light exit surface 212 of each of the four samples. Further, in FIG. 10D , the correlation between the grinding wheel grain size and the surface roughness (more specifically, the arithmetic mean roughness Ra) is shown. That is, the Ra of each of the light exit surface 212 and the light entrance surface 211 of the sample (600/600) is 145 nm. The Ra of each of the light exit surface 212 and the light entrance surface 211 of the sample (1400/1400) is 137 nm. The Ra of the light exit surface 212 of the sample (1400/8000) is 137 nm. In addition, the Ra of the light incident surface 211 of the sample (1400/8000) is 11 nm. The Ra of each of the light exit surface 212 and the light entrance surface 211 of the sample (4000/4000) is 20 nm.

此外,試樣(1400/8000)係作為基準的試樣,為總光通量非常高的試樣。關於其他試樣,亦宜獲得與試樣(1400/8000)同等之總光通量。In addition, the sample (1400/8000) serves as a reference sample and has a very high total luminous flux. For other samples, it is also appropriate to obtain the same total luminous flux as the sample (1400/8000).

2個試樣(600/600)之總光通量的平均值、2個試樣(1400/1400)之總光通量的平均值、及3個試樣(4000/4000)之總光通量的平均值,各自與2個試樣(1400/8000)之總光通量的平均值相同。The average of the total luminous flux of 2 samples (600/600), the average of the total luminous flux of 2 samples (1400/1400), and the average of the total luminous flux of 3 samples (4000/4000), respectively The same as the average of the total luminous flux of the two samples (1400/8000).

如圖10D所示,藉由使光入射面211之Ra為20nm以上,而可獲得與作為基準的試樣(1400/8000)相同程度之總光通量。此外,由本案發明人等之檢討,更清楚得知藉由使光入射面211之Ra為500nm以下,而可獲得與作為基準的試樣(1400/8000)相同程度之總光通量。進一步,從圖10D亦可清楚得知藉由使光入射面211之Ra為20nm以上145nm以下,而可獲得與作為基準的試樣(1400/8000)相同程度之總光通量。此外,作為基準的試樣(1400/8000)的光入射面211之Ra為11nm。相較於光入射面211之Ra為11nm的試樣(1400/8000),用於製造光入射面211之Ra為20nm以上的試樣之步驟數或成本減少。亦即,可實現低成本、輸出與作為基準的試樣(1400/8000)為相同程度之總光通量的輸出光之螢光體元件1。As shown in FIG. 10D , by setting the Ra of the light incident surface 211 to 20 nm or more, the total luminous flux can be obtained to the same extent as that of the reference sample (1400/8000). In addition, from the review by the present inventors, it became clear that by setting the Ra of the light incident surface 211 to 500 nm or less, the same level of total luminous flux as that of the reference sample (1400/8000) can be obtained. Furthermore, it is also clear from FIG. 10D that by setting the Ra of the light incident surface 211 to 20 nm or more and 145 nm or less, the same total luminous flux as that of the reference sample (1400/8000) can be obtained. In addition, the Ra of the light incident surface 211 of the reference sample (1400/8000) is 11 nm. Compared with the sample (1400/8000) where the Ra of the light incident surface 211 is 11 nm, the number of steps or the cost for manufacturing the sample where the Ra of the light incident surface 211 is 20 nm or more is reduced. That is, it is possible to realize a phosphor element 1 that outputs light at a low cost and has a total luminous flux equivalent to that of the reference sample (1400/8000).

[光反射部的特性] 進一步,針對光反射部22更詳細地說明。此處,針對光反射部22的製作方法及物理性質予以說明。 [Characteristics of the light reflecting part] Furthermore, the light reflection part 22 is demonstrated in more detail. Here, the manufacturing method and physical properties of the light reflecting portion 22 will be described.

在[光反射部的特性],製作光反射部22的3個試樣。此處,製作使後述煅燒溫度各自變更的3個試樣。In [Characteristics of the light reflecting portion], three samples of the light reflecting portion 22 were produced. Here, three samples in which the calcination temperatures described below were changed were produced.

作為試樣各自之原料,平均粒子徑0.2μm,使用具有α型之晶系的Al 2O 3粉末。 As the raw material for each sample, Al 2 O 3 powder having an α-type crystal system with an average particle diameter of 0.2 μm was used.

該Al 2O 3粉末,利用手動油壓機(理研精機公司製)與模具(φ13mm),模製成型為圓柱狀。將Al 2O 3粉末模製成型時,對試樣各自施加的壓力為6MPa。接著,利用冷均壓加壓裝置,將模製成型後的試樣各自正式成型。正式成型時,對試樣各自施加的壓力為250MPa。另,施行模製成型及正式成型時,並未使用黏結劑。如此地,獲得光反射部22之原料的成型體。 This Al 2 O 3 powder was molded into a cylindrical shape using a manual hydraulic press (manufactured by Riken Seiki Co., Ltd.) and a mold (φ13 mm). When Al 2 O 3 powder is molded, the pressure applied to each sample is 6 MPa. Then, the molded samples were each formally formed using a cold pressure equalizing and pressing device. During formal molding, the pressure applied to each sample was 250MPa. In addition, no adhesive is used during molding and formal forming. In this way, a molded body of the raw material of the light reflecting portion 22 is obtained.

進一步,將該成型體,利用大氣電爐煅燒。煅燒溫度,位於約1100℃以上約1500℃以下的範圍內;藉由變更煅燒溫度,製作出密度不同的3個試樣。Furthermore, the molded body is calcined in an atmospheric electric furnace. The calcination temperature is in the range of about 1100°C to about 1500°C. By changing the calcination temperature, three samples with different densities were produced.

接著,藉由阿基米德法,評價煅燒後的試樣各自之密度。此外,使Al 2O 3的理論密度為3.95g/cm 3,分別算出試樣的相對於理論密度之比率。 Next, the density of each calcined sample was evaluated by Archimedes' method. In addition, the theoretical density of Al 2 O 3 was set to 3.95 g/cm 3 , and the ratio of the sample to the theoretical density was calculated.

3個試樣各自之密度為3.230g/cm 3、3.788g/cm 3、及3.950g/cm 3。此外, 3個試樣各自的相對於理論密度之比率,為81.1%、95.0%、及100%。此外,以下,有將密度為3.230g/cm 3的試樣稱作第1試樣,將密度為3.788g/cm 3的試樣稱作第2試樣,將密度為3.950g/cm 3的試樣稱作第3試樣之情況。另,煅燒溫度越高,則試樣之密度變高,亦即試樣的相對於理論密度之比率變高。 The densities of each of the three samples are 3.230g/cm 3 , 3.788g/cm 3 , and 3.950g/cm 3 . In addition, the ratios of the three samples to the theoretical density were 81.1%, 95.0%, and 100%. In addition, below, the sample with a density of 3.230 g/cm 3 will be called a first sample, a sample with a density of 3.788 g/cm 3 will be called a second sample, and a sample with a density of 3.950 g/cm 3 will be called the first sample. The sample is called the third sample. In addition, the higher the calcination temperature, the higher the density of the sample, that is, the higher the ratio of the sample to the theoretical density.

如同上述,本實施形態的光反射部22之密度(即光反射性陶瓷之密度),為理論密度的98%以下即可,故第1試樣及第2試樣相當於光反射部22。如同上述,光反射部22之主成分為光反射性陶瓷,故相當於光反射部22的第1及第2試樣之主成分,亦為光反射性陶瓷。As mentioned above, the density of the light reflective portion 22 in this embodiment (that is, the density of the light reflective ceramic) only needs to be 98% or less of the theoretical density. Therefore, the first sample and the second sample correspond to the light reflective portion 22 . As mentioned above, the main component of the light reflective part 22 is light reflective ceramics, so the main components of the first and second samples corresponding to the light reflective part 22 are also light reflective ceramics.

進一步,對於光反射部22的3個試樣,測定可見光範圍中之光反射性。Furthermore, the light reflectivity in the visible light range was measured for three samples of the light reflecting portion 22 .

圖11係顯示第1~第3試樣之光反射率的相對值之圖。另,於圖11,顯示相當於光反射部22的第1及第2試樣、及不相當於光反射部22的第3試樣。FIG. 11 is a graph showing relative values of light reflectance of the first to third samples. In addition, FIG. 11 shows the first and second samples corresponding to the light reflecting portion 22 and the third sample not corresponding to the light reflecting portion 22 .

此外,如同下述地測定光反射率的相對值。將試樣各自之可見光反射率(光反射率的相對值),藉由螢光光譜儀(日本分光公司、FP-6500)評價。此處,將試樣各自的400nm以上800nm以下之波長範圍的光之反射強度的相對於板狀硫酸鋇構件的400nm以上800nm以下之波長範圍的光之反射強度的比率,測定作為光反射率的相對值。亦即,光反射率的相對值,係指相對反射率。In addition, the relative value of the light reflectance was measured as follows. The visible light reflectance (relative value of light reflectance) of each sample was evaluated with a fluorescence spectrometer (JASCO Corporation, FP-6500). Here, the ratio of the reflection intensity of light in the wavelength range of 400 nm to 800 nm of each sample to the reflection intensity of light in the wavelength range of 400 nm to 800 nm of the plate-shaped barium sulfate member was measured as the light reflectance. Relative value. That is, the relative value of light reflectivity refers to the relative reflectivity.

如圖11所示,顯示相對於理論密度之比率越低的試樣,其光反射率的相對值越高。如同上述,本實施形態之螢光體元件1中,從螢光部21發出的輸出光(白色光)中之沿橫向側行進的光,藉由光反射部22反射,返回螢光部21而從螢光部21放射至外部。因而,光反射部22之光反射率的相對值越高,則從螢光體元件1輸出的輸出光越增加。As shown in Figure 11, it is shown that the sample with a lower ratio relative to the theoretical density has a higher relative value of light reflectance. As described above, in the phosphor element 1 of this embodiment, the light traveling along the lateral side among the output light (white light) emitted from the fluorescent part 21 is reflected by the light reflecting part 22 and returns to the fluorescent part 21. Emitted from the fluorescent part 21 to the outside. Therefore, the higher the relative value of the light reflectivity of the light reflecting portion 22 is, the more the output light output from the phosphor element 1 is increased.

本實施形態中,相當於光反射部22的試樣之密度(即光反射性陶瓷之密度),宜為理論密度的98%以下,更宜為95%以下,進一步宜為90%以下。藉由使光反射部22之主成分即光反射性陶瓷之密度位於上述範圍,而可提高光反射率的相對值。In this embodiment, the density of the sample corresponding to the light reflective portion 22 (that is, the density of the light reflective ceramic) is preferably 98% or less of the theoretical density, more preferably 95% or less, and further preferably 90% or less. By setting the density of the light-reflective ceramics, which is the main component of the light-reflecting portion 22, within the above range, the relative value of the light reflectance can be increased.

接著,藉由掃描式電子顯微鏡,觀察光反射部22的3個試樣之表面狀態。使觀察時的倍率為5000倍。Next, the surface conditions of the three samples of the light reflecting part 22 were observed with a scanning electron microscope. The observation magnification was set to 5000 times.

圖12係顯示展現第1~第3試樣之表面狀態的影像之圖。另,於圖12,顯示相當於光反射部22的第1及第2試樣、及不相當於光反射部22的第3試樣。Fig. 12 is a diagram showing images showing the surface conditions of the first to third samples. In addition, FIG. 12 shows the first and second samples corresponding to the light reflecting portion 22 and the third sample not corresponding to the light reflecting portion 22 .

如圖12所示,相對於理論密度之比率越低的試樣,亦即煅燒溫度越低的試樣,則試樣之空隙變得越小。尤其是,相當於光反射部22的第1及第2試樣的空隙之尺寸,為100nm以上2000nm以下。如同上述,由於相當於光反射部22的第1及第2試樣之主成分為光反射性陶瓷,故本實施形態之光反射性陶瓷的空隙之尺寸,為100nm以上2000nm以下。As shown in Figure 12, the sample with a lower ratio to the theoretical density, that is, the sample with a lower calcination temperature, has smaller voids in the sample. In particular, the size of the gaps corresponding to the first and second samples of the light reflecting portion 22 is 100 nm or more and 2000 nm or less. As described above, since the main component of the first and second samples corresponding to the light reflective portion 22 is the light reflective ceramic, the size of the voids in the light reflective ceramic of this embodiment is 100 nm or more and 2000 nm or less.

藉由使空隙之尺寸,亦即光散射部23之尺寸位於此一範圍,而可將從螢光部21發出的輸出光(白色光),藉由光散射而反射,故如圖11所示,可將光反射率的相對值提高。By setting the size of the gap, that is, the size of the light scattering portion 23, within this range, the output light (white light) emitted from the fluorescent portion 21 can be reflected by light scattering, as shown in FIG. 11 , which can improve the relative value of light reflectivity.

另,本實施形態之光反射性陶瓷的空隙之尺寸,並未限定於上述形態。該空隙之平均尺寸,宜為100nm以上10000nm以下,更宜為100nm以上5000nm以下,進一步宜為100nm以上2000nm以下。若使該空隙之平均尺寸位於上述範圍,則可將從螢光部21發出的輸出光(白色光)藉由光散射而反射,故可提高光反射率的相對值。In addition, the size of the voids in the light-reflective ceramics of this embodiment is not limited to the above-mentioned embodiment. The average size of the voids is preferably not less than 100 nm and not more than 10,000 nm, more preferably not less than 100 nm and not more than 5,000 nm, further preferably not less than 100 nm and not more than 2,000 nm. If the average size of the voids is within the above range, the output light (white light) emitted from the fluorescent part 21 can be reflected by light scattering, so that the relative value of the light reflectance can be improved.

[光反射部對輸出光造成之影響的檢討] 進一步,針對本實施形態的光反射部22之密度(即光反射性陶瓷之密度)對螢光體元件1的發光面積及輸出光的總光通量造成之影響進行檢討。首先,針對對發光面積造成之影響予以說明。 [Review of the influence of the light reflection part on the output light] Furthermore, the influence of the density of the light reflection portion 22 (that is, the density of the light reflective ceramic) of the present embodiment on the light-emitting area of the phosphor element 1 and the total luminous flux of the output light is examined. First, the impact on the light-emitting area is explained.

在[光反射部對輸出光造成之影響的檢討],製作具有與圖1所示之螢光體元件1相同的構成之3個試樣。此3個試樣,係分別將光反射部22之密度變更的試樣。In [Examination of the Influence of the Light Reflection Part on Output Light], three samples having the same structure as the phosphor element 1 shown in FIG. 1 were produced. These three samples are samples in which the density of the light reflecting portion 22 was changed respectively.

圖13係顯示光反射部22之密度分別不同的3個試樣之發光影像的圖。另,於圖13,顯示在拍攝發光影像時不具有開口(Aperture)的情況之發光影像、及具有開口的情況之發光影像。此外,與圖4相同,於發光影像中,以漸層顯示照射激發光的情況之亮度的分布,色彩越淡則亮度越高,色彩越濃則亮度越低。此外,6個發光影像中,各自將(a)-(a)線之亮度分布以光譜A顯示,將(b)-(b)線之亮度分布以光譜B顯示。FIG. 13 is a diagram showing the luminescence images of three samples having different densities of the light reflecting portions 22 . In addition, FIG. 13 shows the luminescence image when there is no aperture (Aperture) when capturing the luminescence image, and the luminescence image when there is the aperture. In addition, similar to Figure 4, in the luminescence image, the distribution of brightness when excitation light is irradiated is displayed as a gradient. The lighter the color, the higher the brightness, and the darker the color, the lower the brightness. In addition, in each of the six luminescence images, the brightness distribution of the (a)-(a) line is displayed as spectrum A, and the brightness distribution of the (b)-(b) line is displayed as spectrum B.

此外,光反射部22之密度分別不同的3個試樣,具體而言,如同下述。In addition, the three samples having different densities of the light reflecting portions 22 are specifically as follows.

3個試樣,分別以1200℃、1250℃及1300℃煅燒光反射部22。藉由以不同的煅燒溫度煅燒,而製作出光反射部22之密度分別不同的3個試樣。For the three samples, the light reflecting part 22 was calcined at 1200°C, 1250°C and 1300°C respectively. By calcining at different calcining temperatures, three samples having different densities of the light reflecting portions 22 are produced.

以1200℃煅燒的試樣之光反射部22的相對於理論密度之比率約為89%,以下將該試樣稱作試樣(1200℃)。以1250℃煅燒的試樣之光反射部22的相對於理論密度之比率約為92%,以下將該試樣稱作試樣(1250℃)。以1300℃煅燒的試樣之光反射部22的相對於理論密度之比率約為95%,以下將該試樣稱作試樣(1300℃)。The ratio of the light reflecting portion 22 to the theoretical density of the sample calcined at 1200° C. is approximately 89%, and this sample is hereinafter referred to as the sample (1200° C.). The ratio of the light reflecting portion 22 of the sample calcined at 1250° C. to the theoretical density is approximately 92%, and this sample is hereinafter referred to as the sample (1250° C.). The ratio of the light reflecting portion 22 of the sample calcined at 1300° C. to the theoretical density is approximately 95%, and this sample is hereinafter referred to as the sample (1300° C.).

如同在圖11的說明,若煅燒溫度越高,亦即相對於理論密度之比率越高,則光反射率越降低。在圖13說明的3個試樣中,光反射率亦依試樣(1200℃)、試樣(1250℃)及試樣(1300℃)之順序降低。因此,如圖13所示,試樣(1300℃),亦即相對於理論密度之比率約為95%的試樣,相較於另外2個試樣,光反射率低、螢光及激發光進入至光反射部22中。因此,試樣(1300℃),相較於另外2個試樣,發光面積擴大。As explained in Figure 11, if the calcination temperature is higher, that is, the ratio relative to the theoretical density is higher, the light reflectivity decreases. Among the three samples illustrated in Figure 13, the light reflectance also decreases in the order of sample (1200°C), sample (1250°C) and sample (1300°C). Therefore, as shown in Figure 13, the sample (1300°C), that is, the sample with a ratio of about 95% to the theoretical density, has lower light reflectivity, lower fluorescence and excitation light than the other two samples. Enter into the light reflecting part 22 . Therefore, the sample (1300°C) has a larger light-emitting area than the other two samples.

進一步,利用圖14,針對發光面積的擴大之程度予以說明。Furthermore, the degree of expansion of the light-emitting area will be described using FIG. 14 .

圖14係顯示光反射部22之密度分別不同的3個試樣各自之螢光部21的面積(螢光部面積)、發光面積、及將發光面積除以螢光部面積的值之圖。另,將發光面積除以螢光部面積的值,以「發光面積/螢光部面積」表示。螢光部面積及發光面積對應於左縱軸,將發光面積除以螢光部面積的值對應於右縱軸。進一步,於圖14,顯示光反射部22之煅燒溫度與相對於理論密度之比率的相關性。FIG. 14 is a graph showing the area of the fluorescent part 21 (fluorescent part area), the light emitting area, and the value obtained by dividing the light emitting area by the fluorescent part area of three samples having different densities of the light reflecting part 22. In addition, the value obtained by dividing the light-emitting area by the area of the fluorescent part is expressed as "light-emitting area/fluorescent part area". The fluorescent part area and the light-emitting area correspond to the left vertical axis, and the value obtained by dividing the light-emitting area by the fluorescent part area corresponds to the right vertical axis. Furthermore, FIG. 14 shows the correlation between the firing temperature of the light reflecting part 22 and the ratio to the theoretical density.

在3個試樣,發光面積各自較螢光部面積更大。然則,將發光面積除以螢光部面積的值,在以1300℃煅燒的試樣(試樣(1300℃))為最大,表示發光面積的擴大之程度最大的試樣為試樣(1300℃)。In each of the three samples, the light-emitting area is larger than the fluorescent area. However, the value obtained by dividing the luminous area by the area of the phosphor is the largest in the sample calcined at 1300°C (sample (1300°C)), and the sample showing the largest expansion of the luminous area is the sample (1300°C). ).

若光反射部22之光反射率低,則螢光部21之發光面積擴大,此一結果,使入射至設置於螢光體元件1上方之導光件的輸出光減少。亦即,輸出光之利用效率降低。If the light reflectivity of the light reflecting portion 22 is low, the light-emitting area of the fluorescent portion 21 will be expanded. As a result, the output light incident on the light guide provided above the fluorescent element 1 will be reduced. That is, the utilization efficiency of the output light decreases.

因此,光反射部22之反射率越高越佳,即光反射部22之密度較低者為佳。例如,宜使光反射部22之密度(即光反射性陶瓷之密度)為理論密度的98%以下。進一步,光反射部22之密度(即光反射性陶瓷之密度),更宜為95%以下,進一步宜為90%以下。藉由此等構成,可提高光反射部22之光反射率,抑制螢光部21之發光面積的擴大。此一結果,使入射至設置於螢光體元件1上方之導光件的輸出光增加,實現提高了輸出光之利用效率的螢光體元件1。Therefore, the higher the reflectivity of the light reflecting portion 22 is, the better, that is, the lower the density of the light reflecting portion 22 is, the better. For example, it is preferable that the density of the light reflective portion 22 (that is, the density of the light reflective ceramic) is 98% or less of the theoretical density. Furthermore, the density of the light reflective portion 22 (that is, the density of the light reflective ceramic) is more preferably 95% or less, further preferably 90% or less. With such a structure, the light reflectance of the light reflection part 22 can be improved, and the expansion of the light emitting area of the fluorescent part 21 can be suppressed. As a result, the output light incident on the light guide member provided above the phosphor element 1 is increased, and the phosphor element 1 with improved utilization efficiency of the output light is realized.

接著,針對光反射部22之密度(即光反射性陶瓷之密度)對螢光體元件1的輸出光之總光通量造成的影響予以說明。Next, the influence of the density of the light reflective portion 22 (that is, the density of the light reflective ceramic) on the total luminous flux of the output light of the phosphor element 1 will be described.

圖15係顯示光反射部22之密度分別不同的3個試樣之發光特性的一例之圖。FIG. 15 is a diagram showing an example of the luminescence characteristics of three samples having different densities of light reflecting portions 22 .

圖15的橫軸,係為了從光源2射出激發光而投入的(投入電力)。圖15的縱軸,表示3個試樣各自的輸出光之總光通量。在無開口(無AP)的情況,測定3個試樣各自之全部的輸出光之總光通量。一方,在有開口(有AP)的情況,測定3個試樣各自的輸出光中之通過開口(AP)的輸出光之總光通量。另,通過了開口(AP)的輸出光,亦為入射至導光件的輸出光。The horizontal axis of FIG. 15 represents the power input (power input) in order to emit excitation light from the light source 2 . The vertical axis of Figure 15 represents the total luminous flux of the output light of each of the three samples. In the case of no opening (no AP), measure the total luminous flux of all output lights of each of the three samples. On the one hand, when there is an opening (AP), the total luminous flux of the output light passing through the opening (AP) among the output lights of each of the three samples is measured. In addition, the output light that has passed through the opening (AP) is also the output light that is incident on the light guide.

如圖15所示,在無開口(無AP)的情況,若3個試樣各自的輸出光之總光通量為相同的投入電力,則為相同程度。然則,在有開口(有AP)的情況,試樣(1300℃)的輸出光之總光通量,較試樣(1200℃)及試樣(1250℃)各自的輸出光之總光通量降低15%程度。As shown in Figure 15, in the case of no opening (no AP), if the total luminous flux of the output light of each of the three samples is the same input power, it will be the same. However, in the case of openings (with AP), the total luminous flux of the sample (1300℃) is about 15% lower than the total luminous flux of the sample (1200℃) and the sample (1250℃) respectively. .

圖16係顯示光反射部22之密度分別不同的3個試樣之發光特性的另一例之圖。FIG. 16 is a diagram showing another example of the luminescence characteristics of three samples having different densities of the light reflecting portions 22 .

圖16的橫軸,係為了從光源2射出激發光而投入的電力(投入電力)。圖16的縱軸,表示3個試樣各自的有開口(有AP)之情況的輸出光之總光通量的相對於無開口(無AP)之情況的輸出光之總光通量的比例。The horizontal axis of FIG. 16 represents the electric power input to emit excitation light from the light source 2 (input electric power). The vertical axis of FIG. 16 represents the ratio of the total luminous flux of the output light in the case where there is an opening (with AP) to the total luminous flux of the output light in the case where there is no opening (without AP) for each of the three samples.

如圖16所示,試樣(1300℃)中,有開口(有AP)之情況的輸出光之總光通量的相對於無開口(無AP)之情況的輸出光之總光通量的比例,較另外2個試樣更低。亦即,由於具有開口(AP),相較於另外2個試樣,試樣(1300℃)的輸出光之總光通量大幅降低。如圖14所示,試樣(1300℃),發光面積的擴大,較另外2個試樣更大。因此,試樣(1300℃)的輸出光中之無法通過開口(AP)的輸出光之比例,較另外2個試樣變得更多。因此,由於設置開口(AP),相較於另外2個試樣,試樣(1300℃)的輸出光中之通過開口(AP)的輸出光之總光通量大幅減少。例如,投入電力為5.2W時,相較於另外2個試樣,在試樣(1300℃),有開口(有AP)之情況的輸出光之總光通量的相對於無開口(無AP)之情況的輸出光之總光通量的比例,降低4個百分比程度。As shown in Figure 16, in the sample (1300°C), the ratio of the total luminous flux of the output light in the case of the opening (with AP) to the total luminous flux of the output light in the case of no opening (without AP) is larger than that of the other cases. 2 samples were lower. That is, due to the opening (AP), the total luminous flux of the output light of the sample (1300°C) is greatly reduced compared with the other two samples. As shown in Figure 14, the sample (1300°C) has a larger luminous area than the other two samples. Therefore, the proportion of the output light that cannot pass through the opening (AP) among the output light of the sample (1300°C) becomes larger than that of the other two samples. Therefore, due to the provision of the opening (AP), compared with the other two samples, the total luminous flux of the output light of the sample (1300°C) passing through the opening (AP) is greatly reduced. For example, when the input power is 5.2W, compared with the other two samples, at the sample (1300°C), the total luminous flux of the output light in the case of having an opening (with AP) is relative to that of the case without opening (without AP). The ratio of the output light to the total luminous flux of the situation is reduced by 4%.

如圖15及圖16所示,若光反射部22的相對於理論密度之比率越低,亦即,若光反射部22之光反射率越高,則可使通過開口(AP)的輸出光之比例增加、使入射至導光件的輸出光增加。亦即,可實現輸出光之利用效率高的螢光體元件1。As shown in FIGS. 15 and 16 , if the ratio of the light reflecting portion 22 to the theoretical density is lower, that is, if the light reflectivity of the light reflecting portion 22 is higher, the output light passing through the opening (AP) can be reduced. As the ratio increases, the output light incident on the light guide increases. That is, the phosphor element 1 with high output light utilization efficiency can be realized.

[光反射部之光反射性的檢討] 在[光反射部之光反射性的檢討],進一步製作光反射部22的10個試樣。另,此10個試樣,係與上述第1~第3試樣不同的試樣,但除了使作為原料之Al 2O 3粉末不同的點、及使煅燒溫度不同的點以外,藉由相同製作方法製作。 [Inspection of the light reflectivity of the light reflecting part] In [Inspection of the light reflectivity of the light reflecting part], ten samples of the light reflecting part 22 were further produced. In addition, these 10 samples are different from the first to third samples mentioned above, but they are the same except for the Al 2 O 3 powder used as the raw material and the calcination temperature. How to make it.

此10個試樣,分類為2種試樣。此2種試樣,使用彼此不同種類之Al 2O 3粉末製作。2種試樣中之一種試樣,包含5個試樣,為了辨識而將此5個試樣稱作第4~第8試樣。2種試樣中之另一種試樣,包含5個試樣,為了辨識而將此5個試樣稱作第9~第13試樣。 These 10 samples are classified into 2 types of samples. These two types of samples were produced using different types of Al 2 O 3 powders. One of the two types of samples includes 5 samples, and these 5 samples are called the 4th to 8th samples for identification. The other type of sample among the two types of samples includes 5 samples. For the purpose of identification, these 5 samples are called the 9th to 13th samples.

此外,於第4~第8試樣,分別使用TM-5D(大明化學工業公司)作為Al 2O 3粉末;於第9~第13試樣,分別使用AKP-700(住友化學公司)作為Al 2O 3粉末。TM-5D之平均一次粒子徑為0.2μm,AKP-700之平均一次粒子徑為未滿0.17μm。 In addition, in the 4th to 8th samples, TM-5D (Daimei Chemical Industry Co., Ltd.) was used as the Al 2 O 3 powder; in the 9th to 13th samples, AKP-700 (Sumitomo Chemical Co., Ltd.) was used as the Al powder. 2 O 3 powder. The average primary particle diameter of TM-5D is 0.2μm, and the average primary particle diameter of AKP-700 is less than 0.17μm.

進一步,針對製作第4~第13試樣時之煅燒溫度予以說明。第4及第9試樣,分別以1150℃煅燒。第5及第10試樣,分別以1200℃煅燒。第6及第11試樣,分別以1250℃煅燒。第7及第12試樣,分別以1300℃煅燒。第8及第13試樣,分別以1400℃煅燒。Furthermore, the calcination temperature when preparing the 4th to 13th samples is demonstrated. The 4th and 9th samples were calcined at 1150°C respectively. The 5th and 10th samples were calcined at 1200°C respectively. The 6th and 11th samples were calcined at 1250°C respectively. The 7th and 12th samples were calcined at 1300°C respectively. The 8th and 13th samples were calcined at 1400°C respectively.

圖17係顯示第4~第8試樣之光反射率的相對值之圖。圖18係顯示第9~第13試樣之光反射率的相對值之圖。光反射率的相對值之測定方法,與第1~第3試樣相同。另,在圖17及圖18,使硫酸鋇構件的每種測定波長之反射率為1,顯示第4~第13試樣之光反射率的相對值。另,在圖17及圖18,於括弧內顯示煅燒溫度。FIG. 17 is a graph showing the relative values of light reflectance of the fourth to eighth samples. Fig. 18 is a graph showing the relative values of light reflectance of the ninth to thirteenth samples. The method for measuring the relative value of light reflectance is the same as for the first to third samples. In addition, in FIGS. 17 and 18 , the reflectance of the barium sulfate member for each measurement wavelength is set to 1, and the relative values of the light reflectance of the fourth to thirteenth samples are shown. In addition, in Figures 17 and 18, the calcination temperature is shown in parentheses.

如圖17及圖18所示,於第4~第13試樣之任一者中,相較於長波長範圍(例如500nm以上800nm以下的波長範圍),在短波長範圍(例如400nm以上450nm以下的波長範圍)中,光反射率的相對值降低。然而,於第4~第7試樣、及第9及第10試樣中,在該短波長範圍之光反射率的相對值之降低受到抑制,亦即,在全部的可見光範圍中,顯示相同程度之光反射率的相對值。As shown in Figures 17 and 18, in any one of the fourth to thirteenth samples, compared with the long wavelength range (for example, the wavelength range of 500 nm to 800 nm), the short wavelength range (for example, 400 nm to 450 nm) is (wavelength range), the relative value of light reflectivity decreases. However, in the 4th to 7th samples, and the 9th and 10th samples, the decrease in the relative value of the light reflectance in the short wavelength range is suppressed, that is, the same value is displayed in the entire visible light range. Relative value of degree of light reflectance.

如此地,相對於長波長之光反射率的相對值,宜使短波長之光反射率的相對值高。具體而言,在使長波長之光反射率的相對值(即相對反射率)為100%之情況,宜使短波長之光反射率的相對值(相對反射率)為95%以上。In this way, it is preferable that the relative value of the reflectance of light of short wavelength is high relative to the relative value of reflectance of light of long wavelength. Specifically, when the relative value of the long-wavelength light reflectance (that is, the relative reflectance) is 100%, it is preferable to set the relative value of the short-wavelength light reflectance (that is, the relative reflectance) to 95% or more.

作為一例,長波長為500nm以上800nm以下之1種波長;短波長為較長波長更短的波長,係400nm以上450nm以下之1種波長。此例之情況,例如,長波長為700nm,短波長為400nm,在使長波長(700nm)之光反射率的相對值為100%之情況,短波長(400nm)之光反射率的相對值為95%以上。於第4試樣中,長波長(700nm)及短波長(400nm)各自之光反射率的相對值為1.01及0.98。若使長波長(700nm)之光反射率的相對值即1.01為100%,則短波長(400nm)之光反射率的相對值之0.98,成為97%。亦即,於第4試樣中,在使長波長之光反射率的相對值(相對反射率)為100%之情況,滿足短波長之光反射率的相對值(相對反射率)為95%以上。此外,於第5~第7試樣、及第9及第10試樣中亦相同。As an example, long wavelength is a wavelength ranging from 500nm to 800nm; short wavelength is a longer wavelength and shorter wavelength, which is a wavelength ranging from 400nm to 450nm. In this case, for example, the long wavelength is 700nm and the short wavelength is 400nm. When the relative value of the light reflectance of the long wavelength (700nm) is 100%, the relative value of the light reflectance of the short wavelength (400nm) is above 95. In the fourth sample, the relative values of the light reflectance of long wavelength (700nm) and short wavelength (400nm) are 1.01 and 0.98 respectively. If the relative value of the long wavelength (700nm) light reflectance of 1.01 is 100%, the relative value of the short wavelength (400nm) light reflectance of 0.98 becomes 97%. That is, in the fourth sample, when the relative value (relative reflectance) of the long-wavelength light reflectance is 100%, the relative value (relative reflectance) of the short-wavelength light reflectance is satisfied to be 95%. above. In addition, the same is true for the 5th to 7th samples, and the 9th and 10th samples.

如第4~第7試樣、及第9及第10試樣所示,於光反射部22中,在使長波長之光反射率的相對值(相對反射率)為100%之情況,使短波長之光反射率的相對值(相對反射率)為95%以上即可。藉由此一構成,可將光反射部22之光反射率在更寬廣的波長範圍提高,抑制螢光部21之發光面積的擴大。此一結果,使入射至設置於螢光體元件1上方之導光件的輸出光增加,實現提高了輸出光之利用效率的螢光體元件1。As shown in the 4th to 7th samples, and the 9th and 10th samples, in the light reflection part 22, when the relative value (relative reflectance) of the long wavelength light reflectance is 100%, The relative value (relative reflectance) of short-wavelength light reflectivity is sufficient to be 95% or more. With this structure, the light reflectance of the light reflecting part 22 can be improved over a wider wavelength range, and the expansion of the light emitting area of the fluorescent part 21 can be suppressed. As a result, the output light incident on the light guide member provided above the phosphor element 1 is increased, and the phosphor element 1 with improved utilization efficiency of the output light is realized.

[效果等] 發明1為具備基板構件10及波長轉換構件20之螢光體元件1;該波長轉換構件20具有螢光部21與光反射部22,設置於基板構件10。螢光部21,具有光入射面211及光出射面212;光反射部22,從光出射面212之方向觀察時,設置於螢光部21的周圍。螢光部21之主成分為包含Ce 3+的YAG螢光體陶瓷。光反射部22之主成分為光反射性陶瓷。YAG螢光體陶瓷之Ce 3+濃度為0.005%以上0.02%以下。YAG螢光體陶瓷之厚度為350μm以上820μm以下。 [Effects, etc.] Invention 1 is a phosphor element 1 including a substrate member 10 and a wavelength conversion member 20; the wavelength conversion member 20 has a fluorescent part 21 and a light reflection part 22 and is provided on the substrate member 10. The fluorescent part 21 has a light incident surface 211 and a light exit surface 212; the light reflection part 22 is provided around the fluorescent part 21 when viewed from the direction of the light exit surface 212. The main component of the fluorescent part 21 is YAG phosphor ceramic containing Ce 3+ . The main component of the light reflecting part 22 is light reflective ceramics. The Ce 3+ concentration of YAG phosphor ceramics is 0.005% or more and 0.02% or less. The thickness of YAG phosphor ceramic is between 350μm and 820μm.

如圖9及圖10A所示,藉由控制螢光部之Ce 3+濃度及厚度雙方,於實施例1~實施例4中,相較於檢討例1~檢討例7,實現了輸出光之色度的角度依存性小之螢光體元件。上述實施例1~實施例4之螢光體元件,從螢光部之Ce 3+濃度及厚度的觀點來看,為相當於螢光體元件1的元件。因而,本實施形態之螢光體元件1,亦藉由上述構成,實現成為輸出光之色度的角度依存性小之元件。 As shown in FIGS. 9 and 10A , by controlling both the Ce 3+ concentration and the thickness of the fluorescent part, in Examples 1 to 4, compared with Review Examples 1 to Review Examples 7, higher light output was achieved. A phosphor element with small angle dependence of chromaticity. The phosphor elements of Examples 1 to 4 described above are equivalent to the phosphor element 1 from the viewpoint of the Ce 3+ concentration and thickness of the phosphor part. Therefore, the phosphor element 1 of this embodiment also has the above-mentioned structure, and is an element in which the chromaticity of the output light has small angle dependence.

進一步,如圖9所示,實施例1~實施例4中,0°方向之色度與45°方向之色度雙方收斂在上述色度範圍(矩形的虛線)。上述實施例1~實施例4之螢光體元件,為相當於螢光體元件1的元件。亦即,螢光體元件1,能夠輸出可作為內視鏡用途利用之收斂在色度範圍的輸出光。Furthermore, as shown in FIG. 9 , in Examples 1 to 4, both the chromaticity in the 0° direction and the chromaticity in the 45° direction converged within the above-mentioned chromaticity range (rectangular dotted line). The phosphor elements of the above-mentioned Examples 1 to 4 are elements equivalent to the phosphor element 1. That is, the phosphor element 1 can output light that is converged in the chromaticity range and can be used as an endoscope.

如同上述,本實施形態之螢光體元件1,係輸出可作為內視鏡用途利用之收斂在色度範圍的輸出光,且該輸出光之色度的角度依存性小之元件。由於色度的角度依存性小,故在將螢光體元件1利用在內視鏡之情況,亦可使從該內視鏡輸出的光之色度的角度依存性減小。螢光體元件1,作為內視鏡用途,為性能更高之元件。 此外,如圖10B及表5所示,螢光部21之厚度(即YAG螢光體陶瓷之厚度)為350μm以上820μm以下的6種試樣(相當於螢光體元件1的試樣)的輸出光之總光通量,皆為930lm以上。因此,本實施形態之螢光體元件1,係輸出光之總光通量高至可利用在內視鏡之程度的元件。 綜上所述,本實施形態中,實現了輸出光之色度的角度依存性小、且輸出光之總光通量高的螢光體元件1;此等螢光體元件1,作為內視鏡用途,為性能進一步更高的元件。 As described above, the phosphor element 1 of this embodiment is an element that outputs output light that converges within a chromaticity range that can be used as an endoscope, and that has a small angular dependence of the chromaticity of the output light. Since the angular dependence of the chromaticity is small, when the fluorescent element 1 is used in an endoscope, the angular dependence of the chromaticity of the light output from the endoscope can be reduced. The phosphor element 1 is used as an endoscope and has higher performance. In addition, as shown in FIG. 10B and Table 5, there are six types of samples (samples equivalent to the phosphor element 1) in which the thickness of the phosphor part 21 (that is, the thickness of the YAG phosphor ceramic) is 350 μm or more and 820 μm or less. The total luminous flux of the output light is above 930lm. Therefore, the phosphor element 1 of this embodiment is an element whose total luminous flux of output light is high enough to be used in an endoscope. To sum up, in this embodiment, the phosphor element 1 with small angular dependence of the chromaticity of the output light and high total luminous flux of the output light is realized; these phosphor elements 1 are used as endoscopes , for components with further higher performance.

發明2為如發明1之螢光體元件1,其中,光反射性陶瓷之密度為理論密度的95%以下。Invention 2 is the phosphor element 1 according to Invention 1, wherein the density of the light-reflective ceramic is 95% or less of the theoretical density.

藉此,如圖11所示,提高光反射部22(光反射性陶瓷)之光反射率。因此,從螢光部21發出的輸出光(白色光)中之往橫向側行進的光,藉由光反射部22反射,返回螢光部21而從螢光部21放射至外部。因而,可增加從螢光體元件1輸出的輸出光。因此,例如,如圖5所示,可更為提高依據從螢光體元件1輸出之輸出光的導光件光之總光通量。Thereby, as shown in FIG. 11, the light reflectance of the light reflection part 22 (light reflective ceramics) is improved. Therefore, among the output light (white light) emitted from the fluorescent part 21 , the light traveling toward the lateral side is reflected by the light reflecting part 22 , returns to the fluorescent part 21 , and is emitted from the fluorescent part 21 to the outside. Therefore, the output light output from the phosphor element 1 can be increased. Therefore, for example, as shown in FIG. 5 , the total luminous flux of the light guide light based on the output light output from the phosphor element 1 can be further improved.

發明3為如發明1或2之螢光體元件1,其中,於光反射性陶瓷中,在令長波長的光之相對反射率為100%的情況,波長較長波長更短之短波長的光之相對反射率為95%以上。Invention 3 is the phosphor element 1 according to Invention 1 or 2, wherein in the light-reflective ceramic, when the relative reflectivity of long-wavelength light is 100%, the long-wavelength light is shorter than the short-wavelength light. The relative reflectivity of light is over 95%.

藉此,如圖17及圖18所示,可將光反射部22之光反射率在更寬廣的波長範圍提高,抑制螢光部21之發光面積的擴大。此一結果,使入射至設置於螢光體元件1上方之導光件的輸出光增加,實現提高了輸出光之利用效率的螢光體元件1。Thereby, as shown in FIGS. 17 and 18 , the light reflectance of the light reflecting portion 22 can be improved over a wider wavelength range, and the expansion of the light-emitting area of the fluorescent portion 21 can be suppressed. As a result, the output light incident on the light guide member provided above the phosphor element 1 is increased, and the phosphor element 1 with improved utilization efficiency of the output light is realized.

發明4為如發明1至3中任一者之螢光體元件1,其中,YAG螢光體陶瓷之密度為理論密度的98%以上。Invention 4 is the phosphor element 1 according to any one of Inventions 1 to 3, wherein the density of the YAG phosphor ceramic is 98% or more of the theoretical density.

藉此,可改善螢光部21的耐熱性及散熱性,不易發生因熱而造成之螢光部21的發光效率之降低。此外,藉由使用螢光體陶瓷層作為螢光部21,而可抑制因螢光的散射所造成之光損耗,故可改善螢光部21的轉換效率。因而,可增加從螢光體元件1輸出的輸出光。因此,例如,如圖5所示,可使依據從螢光體元件1輸出之輸出光的導光件光之總光通量更為提高。Thereby, the heat resistance and heat dissipation of the fluorescent part 21 can be improved, and the luminous efficiency of the fluorescent part 21 is less likely to be reduced due to heat. In addition, by using a phosphor ceramic layer as the fluorescent part 21, light loss caused by scattering of fluorescent light can be suppressed, so the conversion efficiency of the fluorescent part 21 can be improved. Therefore, the output light output from the phosphor element 1 can be increased. Therefore, for example, as shown in FIG. 5 , the total luminous flux of the light guide light based on the output light output from the phosphor element 1 can be further improved.

發明5為如發明1至4中任一者之螢光體元件1,其中,YAG螢光體陶瓷之厚度為726μm以上820μm以下。Invention 5 is the phosphor element 1 according to any one of Inventions 1 to 4, wherein the YAG phosphor ceramic has a thickness of 726 μm or more and 820 μm or less.

如圖10C及表6所示,螢光部21之厚度(YAG螢光體陶瓷之厚度)為726μm以上820μm以下的3種試樣(相當於螢光體元件1的試樣)之色溫,為5050K以上5810K以下。因此,本實施形態之螢光體元件1(例如該3種試樣),各自的輸出光之色溫成為較適宜的範圍,故更容易利用在內視鏡。As shown in FIG. 10C and Table 6, the color temperatures of three types of samples (samples equivalent to the phosphor element 1) in which the thickness of the phosphor part 21 (the thickness of the YAG phosphor ceramic) is 726 μm or more and 820 μm or less are: Above 5050K and below 5810K. Therefore, the color temperature of each output light of the phosphor element 1 of this embodiment (such as these three types of samples) is in a more suitable range, so it is easier to use it in an endoscope.

發明6為如發明1至5中任一者之螢光體元件1,其中,光入射面211之算術平均粗糙度Ra為20nm以上500nm以下。Invention 6 is the phosphor element 1 according to any one of Inventions 1 to 5, wherein the arithmetic mean roughness Ra of the light incident surface 211 is 20 nm or more and 500 nm or less.

藉此,如同在圖10D所說明,螢光體元件1的輸出光,可獲得與作為基準的試樣(1400/8000)的輸出光相同程度之總光通量。此外,藉此,相較於光入射面211之Ra為11nm的試樣(1400/8000),減少用於製造本實施形態之螢光體元件1的步驟數或成本。亦即,可實現低成本、輸出與作為基準的試樣(1400/8000)為相同程度之總光通量的輸出光之螢光體元件1。Thereby, as explained in FIG. 10D , the output light of the phosphor element 1 can obtain the same total luminous flux as the output light of the reference sample (1400/8000). In addition, by this, the number of steps and cost for manufacturing the phosphor element 1 of this embodiment can be reduced compared to the sample (1400/8000) in which the Ra of the light incident surface 211 is 11 nm. That is, it is possible to realize a phosphor element 1 that outputs light at a low cost and has a total luminous flux equivalent to that of the reference sample (1400/8000).

發明7為如發明1至6中任一者之螢光體元件1,其中,光反射性陶瓷之主成分為氧化鋁陶瓷。光反射性陶瓷的空隙之尺寸為100nm以上2000nm以下。Invention 7 is the phosphor element 1 according to any one of Inventions 1 to 6, wherein the main component of the light reflective ceramic is alumina ceramic. The size of the voids in the light reflective ceramic is from 100 nm to 2000 nm.

藉此,藉由使空隙之尺寸,亦即,使光散射部23位於此一範圍,而可將從螢光部21發出的輸出光(白色光)藉由光散射而反射,故如圖11所示,可提高光反射率的相對值。Thereby, by adjusting the size of the gap, that is, arranging the light scattering portion 23 to be located in this range, the output light (white light) emitted from the fluorescent portion 21 can be reflected by light scattering, so as shown in Figure 11 As shown, the relative value of light reflectivity can be improved.

發明8,係具備發明1~7中之任一種螢光體元件1的光源模組100。Invention 8 is a light source module 100 provided with any one of the phosphor elements 1 of Inventions 1 to 7.

如同上述,螢光體元件1為輸出光之色度的角度依存性小之元件。具備此等螢光體元件1的光源模組100,亦成為輸出光之色度的角度依存性小的模組。進一步,螢光體元件1,亦為輸出可作為內視鏡用途利用之收斂在色度範圍的輸出光,且該輸出光之色度的角度依存性小之元件。因而,光源模組100,亦為輸出可作為內視鏡用途利用之收斂在色度範圍的輸出光,且該輸出光之色度的角度依存性小之模組。As described above, the phosphor element 1 is an element in which the chromaticity of the output light has little dependence on the angle. The light source module 100 including the phosphor element 1 also has a small angle dependence of the chromaticity of the output light. Furthermore, the phosphor element 1 is also an element that outputs output light that is converged in a chromaticity range that can be used as an endoscope, and that has a small angular dependence of the chromaticity of the output light. Therefore, the light source module 100 is also a module that outputs output light that converges in the chromaticity range and can be used as an endoscope, and the chromaticity of the output light has small angle dependence.

(其他實施形態) 以上,針對本發明之螢光體元件1,依據實施形態進行說明,但本發明並未限定於上述實施形態。只要不脫離本發明之主旨,對實施形態施行所屬技術領域中具有通常知識者所思及之各種變形的形態、及將不同實施形態之構成要素組合而構築出的其他形態,皆包含於本發明的範圍。 (Other embodiments) The phosphor element 1 of the present invention has been described above based on the embodiment. However, the present invention is not limited to the above embodiment. As long as the embodiments do not deviate from the gist of the present invention, various modifications to the embodiments that can be thought of by those skilled in the art and other embodiments constructed by combining the constituent elements of different embodiments are all included in the present invention. range.

例如,於上述實施形態1、2中,基板構件10,除了具備透光基材11以外,具備介電材料多層膜12及反射防止膜13,但並未限定於此一形態。具體而言,基板構件10,亦可不具有介電材料多層膜12及反射防止膜13而僅由透光基材11構成。For example, in the above-mentioned Embodiments 1 and 2, the substrate member 10 includes the dielectric material multilayer film 12 and the anti-reflection film 13 in addition to the light-transmitting base material 11, but it is not limited to this form. Specifically, the substrate member 10 may not include the dielectric material multilayer film 12 and the anti-reflection film 13 and may be composed of only the light-transmitting base material 11 .

此外,上述實施形態中,光源模組100,係使入射至螢光體元件1的激發光透射過螢光體元件1之透射型發光裝置,但並未限定於此一形態。例如,光源模組100,亦可為入射至螢光體元件1的激發光未透射過螢光體元件1而藉由螢光體元件1反射之反射型發光裝置。亦即,光源模組100,亦可構成為將從光源2射出的光藉由波長轉換構件20反射。此一情況,形成有波長轉換構件20之基板構件10成為反射基板,從波長轉換構件20之上方照射激發光。In addition, in the above-described embodiment, the light source module 100 is a transmission-type light-emitting device that transmits the excitation light incident on the phosphor element 1 through the phosphor element 1. However, the light source module 100 is not limited to this form. For example, the light source module 100 may also be a reflective light-emitting device in which the excitation light incident on the phosphor element 1 is not transmitted through the phosphor element 1 but is reflected by the phosphor element 1 . That is, the light source module 100 may be configured so that the light emitted from the light source 2 is reflected by the wavelength conversion member 20 . In this case, the substrate member 10 on which the wavelength conversion member 20 is formed becomes a reflective substrate, and the excitation light is irradiated from above the wavelength conversion member 20 .

此外,上述實施形態中,光源模組100為不移動螢光體元件1之固定型發光裝置,但並未限定於此一形態。具體而言,光源模組100,亦可為使螢光體元件1旋轉之旋轉型發光裝置。此一情況,螢光體元件1,例如可作為旋轉之螢光輪而使用。In addition, in the above embodiment, the light source module 100 is a fixed light-emitting device that does not move the phosphor element 1, but it is not limited to this form. Specifically, the light source module 100 may be a rotary light-emitting device that rotates the phosphor element 1 . In this case, the phosphor element 1 can be used as a rotating phosphor wheel, for example.

另,基板構件10與波長轉換構件20,亦可經由透明黏接層而黏接。藉由將基板構件10與波長轉換構件20經由透明黏接層黏接,而將波長轉換構件20固定在基板構件10,故可實現物理可靠度高之螢光體元件。In addition, the substrate member 10 and the wavelength conversion member 20 may also be bonded through a transparent adhesive layer. By bonding the substrate member 10 and the wavelength conversion member 20 via a transparent adhesive layer, and fixing the wavelength conversion member 20 to the substrate member 10, a phosphor element with high physical reliability can be realized.

以下利用圖19,針對此等螢光體元件予以說明。These phosphor elements will be described below using FIG. 19 .

圖19係顯示另一例之螢光體元件3的構成之圖。於圖19中,(a)為螢光體元件3的平面圖,(b)為(a)的XIXb-XIXb線之螢光體元件3的剖面圖。FIG. 19 is a diagram showing the structure of another example of the phosphor element 3. In FIG. 19 , (a) is a plan view of the phosphor element 3, and (b) is a cross-sectional view of the phosphor element 3 taken along line XIXb-XIXb in (a).

該另一例之螢光體元件3,在具備透明黏接層30的點,與上述實施形態之螢光體元件1不同。亦即,螢光體元件3,具備基板構件10、波長轉換構件20、及透明黏接層30。The phosphor element 3 of this other example is different from the phosphor element 1 of the above embodiment in that it is provided with a transparent adhesive layer 30 . That is, the phosphor element 3 includes the substrate member 10 , the wavelength conversion member 20 , and the transparent adhesive layer 30 .

如同圖19,波長轉換構件20設置於基板構件10之上方,此處,基板構件10與波長轉換構件20係藉由透明黏接層30黏接。在此另一例,基板構件10與波長轉換構件20之光反射部22,經由透明黏接層30而黏接;基板構件10與波長轉換構件20之螢光部21,並未經由透明黏接層30而黏接。As shown in FIG. 19 , the wavelength conversion component 20 is disposed above the substrate component 10 . Here, the substrate component 10 and the wavelength conversion component 20 are bonded by a transparent adhesive layer 30 . In another example, the light reflection portion 22 of the substrate member 10 and the wavelength conversion member 20 are bonded through the transparent adhesive layer 30; the substrate member 10 and the fluorescent portion 21 of the wavelength conversion member 20 are not bonded through the transparent adhesive layer. 30 and bonding.

於透明黏接層30,設置矩形的開口部31(空氣層)。具體而言,透明黏接層30之俯視形狀,為具有矩形的開口部31且外形呈矩形的矩形框狀。此外,俯視時,開口部31的外形較螢光部21的外形更大,螢光部21包含在開口部31之內。換而言之,俯視時,螢光部21與透明黏接層30並未重合。於該矩形的開口部31之上方,設置螢光部21,故螢光部21不與透明黏接層30接觸。A rectangular opening 31 (air layer) is provided in the transparent adhesive layer 30 . Specifically, the transparent adhesive layer 30 has a plan view shape of a rectangular frame with a rectangular opening 31 and a rectangular outer shape. In addition, when viewed from above, the outer shape of the opening 31 is larger than the outer shape of the fluorescent part 21 , and the fluorescent part 21 is included in the opening 31 . In other words, when viewed from above, the fluorescent part 21 and the transparent adhesive layer 30 do not overlap. The fluorescent part 21 is provided above the rectangular opening 31 so that the fluorescent part 21 does not contact the transparent adhesive layer 30 .

透明黏接層30之厚度並無特別限定,但宜為0.5μm以上50μm以下。較佳態樣中,透明黏接層30之厚度為5μm以上10μm以下。The thickness of the transparent adhesive layer 30 is not particularly limited, but is preferably 0.5 μm or more and 50 μm or less. In a preferred embodiment, the thickness of the transparent adhesive layer 30 is between 5 μm and 10 μm.

於此另一例中,在設置有相當於光源2的光源之情況,從該光源射出的光,入射至基板構件10之背面。入射至基板構件10之光源的光,透射過基板構件10及開口部31而到達至波長轉換構件20之螢光部21。In this other example, when a light source equivalent to the light source 2 is provided, the light emitted from the light source is incident on the back surface of the substrate member 10 . The light incident on the light source of the substrate member 10 is transmitted through the substrate member 10 and the opening 31 and reaches the fluorescent part 21 of the wavelength conversion member 20 .

此時,螢光部21之黃色螢光體(YAG螢光體),吸收光源的藍色光之一部分而被激發,將黃色光發出為螢光。而在螢光部21,該黃色光與未被黃色螢光體吸收之光源的藍色光混合而成為白色光,從螢光部21將此白色光放射為輸出光。亦即,從波長轉換構件20取出輸出光(白色光)。At this time, the yellow phosphor (YAG phosphor) of the fluorescent part 21 absorbs part of the blue light from the light source and is excited, and emits yellow light as fluorescence. In the fluorescent part 21, this yellow light is mixed with the blue light of the light source that has not been absorbed by the yellow phosphor to become white light, and this white light is emitted from the fluorescent part 21 as output light. That is, the output light (white light) is taken out from the wavelength converting member 20 .

螢光部21之折射率與位於螢光部21下方的開口部31(空氣層)之折射率,為不同的值。因而,螢光部21所發出的黃色光中之前往光源側的光,在螢光部21與開口部31之界面,因折射率的差而被反射,前往光源側之相反側。因而,可使從波長轉換構件20取出的輸出光之總光通量變得更高。The refractive index of the fluorescent part 21 and the refractive index of the opening 31 (air layer) located below the fluorescent part 21 have different values. Therefore, the light of the yellow light emitted by the fluorescent part 21 that goes to the light source side is reflected at the interface between the fluorescent part 21 and the opening part 31 due to the difference in refractive index, and goes to the side opposite to the light source side. Therefore, the total luminous flux of the output light taken out from the wavelength converting member 20 can be made higher.

另,上述另一例中,螢光部21,並未與透明黏接層30接觸,但並未限定於此一形態。例如,亦可將基板構件10與波長轉換構件20之螢光部21,藉由透明黏接層30黏接。於此一情況,並未設置開口部31,並非僅將基板構件10與螢光部21經由透明黏接層30而黏接,亦將基板構件10與光反射部22經由透明黏接層30而黏接。此一情況,因激發光之照射而在螢光部21產生的熱,亦經由透明黏接層30而散熱,故不易發生因熱而造成之螢光部21的發光效率之降低。In addition, in the above-mentioned other example, the fluorescent part 21 is not in contact with the transparent adhesive layer 30, but it is not limited to this form. For example, the substrate member 10 and the fluorescent part 21 of the wavelength conversion member 20 may also be bonded through the transparent adhesive layer 30 . In this case, the opening 31 is not provided, and not only the substrate member 10 and the fluorescent part 21 are bonded through the transparent adhesive layer 30 , but the substrate member 10 and the light reflecting part 22 are also bonded through the transparent adhesive layer 30 . bonding. In this case, the heat generated in the fluorescent part 21 due to the irradiation of the excitation light is also dissipated through the transparent adhesive layer 30, so it is unlikely that the luminous efficiency of the fluorescent part 21 is reduced due to heat.

此外,YAG螢光體陶瓷之Ce 3+濃度,亦可位於以下範圍。 In addition, the Ce 3+ concentration of YAG phosphor ceramics can also be within the following range.

YAG螢光體陶瓷之Ce 3+濃度,宜為0.001%以上0.05%以下,更宜為0.002%以上0.04%以下,進一步宜為0.005%以上0.02%以下。如同上述,該濃度越低,則輸出光之色度的角度依存性變得越小。 The Ce 3+ concentration of YAG phosphor ceramic is preferably not less than 0.001% and not more than 0.05%, more preferably not less than 0.002% and not more than 0.04%, further preferably not less than 0.005% and not more than 0.02%. As described above, the lower the concentration, the smaller the angle dependence of the chromaticity of the output light becomes.

此外,YAG螢光體陶瓷之厚度,宜為100μm以上1500μm以下,更宜為200μm以上1000μm以下,進一步宜為350μm以上820μm以下。如同上述,在YAG螢光體陶瓷之Ce 3+濃度為0.005%以上0.02%以下的情況,藉由使該厚度收斂在上述範圍,而使輸出光之色度的角度依存性變小。另,YAG螢光體陶瓷之厚度,亦可為350μm以上805μm以下,亦可為400μm以上805μm以下,亦可為659μm以上805μm以下。如圖9所示,藉由使該厚度收斂在上述範圍,而使輸出光之色度的角度依存性變小。 In addition, the thickness of the YAG phosphor ceramic is preferably not less than 100 μm and not more than 1500 μm, more preferably not less than 200 μm and not more than 1000 μm, further preferably not less than 350 μm and not more than 820 μm. As described above, when the Ce 3+ concentration of the YAG phosphor ceramic is 0.005% or more and 0.02% or less, the angle dependence of the chromaticity of the output light is reduced by making the thickness fall within the above range. In addition, the thickness of the YAG phosphor ceramic may be 350 μm or more and 805 μm or less, it may be 400 μm or more and 805 μm or less, or it may be 659 μm or more and 805 μm or less. As shown in FIG. 9 , by making the thickness fall within the above range, the angular dependence of the chromaticity of the output light becomes smaller.

另,構成要素之主成分,係指構成該構成要素之成分中,在重量上含有最多之成分。例如,構成要素為螢光部21的情況,螢光部21之主成分,係指構成螢光部21之成分中,在重量上含有最多之成分,實施形態中為包含Ce 3+的YAG螢光體陶瓷。 In addition, the main component of a component means the component that contains the most by weight among the components constituting the component. For example, when the constituent element is the fluorescent part 21, the main component of the fluorescent part 21 refers to the component that contains the most by weight among the components constituting the fluorescent part 21. In the embodiment, it is a YAG fluorescent light containing Ce 3+ . Light body ceramics.

此外,更具體而言,主成分,宜為構成該構成要素之成分中,包含50重量%以上之成分,更宜為包含80重量%以上之成分,進一步宜為包含90重量%以上之成分。Furthermore, more specifically, the main component preferably contains 50% by weight or more of the components constituting the component, more preferably 80% by weight or more, and further preferably 90% by weight or more.

此外,上述實施形態,可在發明申請專利範圍或其均等範圍中,進行各種變更、置換、附加、省略等。In addition, various changes, substitutions, additions, omissions, etc. can be made to the above-described embodiment within the scope of the invention or its equivalent scope.

1,1x,1a,3:螢光體元件 10,10a:基板構件 100:光源模組 11:透光基材 11a:第1面 11b:第2面 12:介電材料多層膜 13:反射防止膜 2:光源 20,20x:波長轉換構件 21,21a,25x:螢光部 211:光入射面 212:光出射面 213~216:側面 22:光反射部 23:光散射部 26x:黏結劑 3:螢光體元件 30:透明黏接層 31:開口部 1,1x,1a,3: phosphor element 10,10a:Substrate component 100:Light source module 11: Transparent substrate 11a:Side 1 11b: Side 2 12: Dielectric material multilayer film 13: Anti-reflection film 2:Light source 20,20x: Wavelength conversion component 21,21a,25x:fluorescent part 211:Light incident surface 212:Light exit surface 213~216: Side 22:Light reflection part 23:Light scattering part 26x:Binder 3: Phosphor components 30:Transparent adhesive layer 31:Opening part

圖1係顯示實施形態之螢光體元件的構成之圖。 圖2係顯示實施形態之光源模組的構成之圖。 圖3係顯示比較例之螢光體元件的構成之圖。 圖4係顯示實施形態之螢光體元件及比較例之螢光體元件的構成要素之表的圖。 圖5係顯示實施形態之螢光體元件及比較例之螢光體元件的發光特性之圖。 圖6係實施例1之螢光體元件的剖面圖。 圖7係顯示檢討例1~檢討例3之螢光體元件的輸出光之色度的角度依存性之圖。 圖8係顯示檢討例4~檢討例6之螢光體元件的輸出光之色度的角度依存性之圖。 圖9係顯示實施例1~實施例4及檢討例7之螢光體元件的輸出光之色度的角度依存性之圖。 圖10A係示意Ce 3+濃度及厚度對激發光及螢光造成之影響的圖。 圖10B係顯示螢光部之厚度分別不同的9種試樣的輸出光之總光通量的圖。 圖10C係顯示螢光部之厚度分別不同的9種試樣之色溫的圖。 圖10D係顯示螢光部之表面粗糙度分別不同的複數個4種試樣的輸出光之總光通量的圖。 圖11係顯示第1~第3試樣之光反射率的相對值之圖。 圖12係顯示展現第1~第3試樣之表面狀態的影像之圖。 圖13係顯示光反射部之密度分別不同的3個試樣之發光影像的圖。 圖14係顯示光反射部之密度分別不同的3個試樣各自之螢光部的面積、發光面積、及將發光面積除以螢光部面積的值之圖。 圖15係顯示光反射部之密度分別不同的3個試樣之發光特性的一例之圖。 圖16係顯示光反射部之密度分別不同的3個試樣之發光特性的另一例之圖。 圖17係顯示第4~第8試樣之光反射率的相對值之圖。 圖18係顯示第9~第13試樣之光反射率的相對值之圖。 圖19係顯示另一例之螢光體元件的構成之圖。 FIG. 1 is a diagram showing the structure of a phosphor element according to the embodiment. FIG. 2 is a diagram showing the structure of the light source module according to the embodiment. FIG. 3 is a diagram showing the structure of a phosphor element of a comparative example. FIG. 4 is a diagram showing a table of structural elements of the phosphor element of the embodiment and the phosphor element of the comparative example. FIG. 5 is a graph showing the luminescence characteristics of the phosphor element of the embodiment and the phosphor element of the comparative example. FIG. 6 is a cross-sectional view of the phosphor element of Example 1. FIG. 7 is a graph showing the angle dependence of the chromaticity of the output light of the phosphor elements of Review Examples 1 to 3. FIG. FIG. 8 is a graph showing the angle dependence of the chromaticity of the output light of the phosphor elements of Review Examples 4 to 6. FIG. 9 is a graph showing the angle dependence of the chromaticity of the output light of the phosphor elements of Examples 1 to 4 and Review Example 7. Figure 10A is a diagram illustrating the effects of Ce 3+ concentration and thickness on excitation light and fluorescence. FIG. 10B is a graph showing the total luminous flux of the output light of nine samples with different thicknesses of the fluorescent parts. FIG. 10C is a graph showing the color temperatures of nine samples with different thicknesses of the fluorescent parts. FIG. 10D is a graph showing the total luminous flux of the output light of a plurality of four types of samples with different surface roughness of the fluorescent part. FIG. 11 is a graph showing relative values of light reflectance of the first to third samples. Fig. 12 is a diagram showing images showing the surface conditions of the first to third samples. FIG. 13 is a diagram showing the luminescence images of three samples with different densities of light reflecting parts. FIG. 14 is a graph showing the area of the fluorescent part, the light-emitting area, and the value of dividing the light-emitting area by the area of the fluorescent part for each of three samples with different densities of light-reflecting parts. FIG. 15 is a diagram showing an example of the light-emitting characteristics of three samples having different densities of light-reflecting parts. FIG. 16 is a diagram showing another example of the light-emitting characteristics of three samples having different densities of light-reflecting parts. FIG. 17 is a graph showing the relative values of light reflectance of the fourth to eighth samples. Fig. 18 is a graph showing the relative values of light reflectance of the ninth to thirteenth samples. FIG. 19 is a diagram showing the structure of another example of a phosphor element.

1:螢光體元件 1:Fluorescent element

10:基板構件 10:Substrate components

11:透光基材 11: Transparent substrate

11a:第1面 11a:Side 1

11b:第2面 11b: Side 2

12:介電材料多層膜 12: Dielectric material multilayer film

13:反射防止膜 13: Anti-reflection film

20:波長轉換構件 20:Wavelength conversion component

21:螢光部 21: Fluorescence Department

211:光入射面 211:Light incident surface

212:光出射面 212:Light exit surface

213~216:側面 213~216: Side

22:光反射部 22:Light reflection part

23:光散射部 23:Light scattering part

Claims (8)

一種螢光體元件,包含: 基板構件;以及 波長轉換構件,具備螢光部及光反射部,設置於該基板構件; 該螢光部,具有光入射面及光出射面; 從該光出射面之方向觀察時,該光反射部,設置於該螢光部的周圍; 該螢光部之主成分為包含Ce 3+的YAG螢光體陶瓷; 該光反射部之主成分為光反射性陶瓷; 該YAG螢光體陶瓷之Ce 3+濃度為0.005%以上0.02%以下; 該YAG螢光體陶瓷之厚度為350μm以上820μm以下。 A phosphor element includes: a substrate member; and a wavelength conversion member having a fluorescent part and a light reflecting part, which is provided on the substrate member; the fluorescent part has a light incident surface and a light exit surface; from the light exit surface When viewed in the direction of ; The Ce 3+ concentration of the YAG phosphor ceramic is not less than 0.005% and not more than 0.02%; the thickness of the YAG phosphor ceramic is not less than 350 μm and not more than 820 μm. 如請求項1之螢光體元件,其中, 該光反射性陶瓷之密度為理論密度的95%以下。 The phosphor component of claim 1, wherein, The density of the light reflective ceramic is less than 95% of the theoretical density. 如請求項1之螢光體元件,其中, 於該光反射性陶瓷中,在令長波長的光之相對反射率為100%的情況,波長較該長波長更短之短波長的光之相對反射率為95%以上。 The phosphor component of claim 1, wherein, In this light-reflective ceramic, when the relative reflectance of long-wavelength light is 100%, the relative reflectivity of short-wavelength light having a shorter wavelength than the long wavelength is 95% or more. 如請求項1之螢光體元件,其中, 該YAG螢光體陶瓷之密度為理論密度的98%以上。 The phosphor component of claim 1, wherein, The density of the YAG phosphor ceramic is more than 98% of the theoretical density. 如請求項1之螢光體元件,其中, 該YAG螢光體陶瓷之厚度為726μm以上820μm以下。 The phosphor component of claim 1, wherein, The thickness of the YAG phosphor ceramic is 726 μm or more and 820 μm or less. 如請求項1之螢光體元件,其中, 該光入射面之算術平均粗糙度為20nm以上500nm以下。 The phosphor component of claim 1, wherein, The arithmetic mean roughness of the light incident surface is 20 nm or more and 500 nm or less. 如請求項1至6中任一項之螢光體元件,其中, 該光反射性陶瓷之主成分為氧化鋁陶瓷; 該光反射性陶瓷的空隙之尺寸為100nm以上2000nm以下。 The phosphor component of any one of claims 1 to 6, wherein, The main component of the light reflective ceramic is alumina ceramic; The size of the voids in the light-reflective ceramic is from 100 nm to 2000 nm. 一種光源模組,其中, 包含如請求項1至7中任一項之螢光體元件。 A light source module, wherein, Containing the phosphor element according to any one of claims 1 to 7.
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