TW202347838A - 壓電體、積層構造體、電子器件、電子機器及其製造方法 - Google Patents

壓電體、積層構造體、電子器件、電子機器及其製造方法 Download PDF

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Publication number
TW202347838A
TW202347838A TW112109205A TW112109205A TW202347838A TW 202347838 A TW202347838 A TW 202347838A TW 112109205 A TW112109205 A TW 112109205A TW 112109205 A TW112109205 A TW 112109205A TW 202347838 A TW202347838 A TW 202347838A
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TW
Taiwan
Prior art keywords
epitaxial layer
layer
film
laminated structure
piezoelectric
Prior art date
Application number
TW112109205A
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English (en)
Chinese (zh)
Inventor
木島健
Original Assignee
日商蓋亞尼克斯股份有限公司
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Publication date
Application filed by 日商蓋亞尼克斯股份有限公司 filed Critical 日商蓋亞尼克斯股份有限公司
Publication of TW202347838A publication Critical patent/TW202347838A/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
    • H10N30/045—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
TW112109205A 2022-03-14 2023-03-13 壓電體、積層構造體、電子器件、電子機器及其製造方法 TW202347838A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2022038741 2022-03-14
JP2022-038741 2022-03-14
JP2022-138840 2022-08-31
JP2022138840 2022-08-31

Publications (1)

Publication Number Publication Date
TW202347838A true TW202347838A (zh) 2023-12-01

Family

ID=88023698

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112109205A TW202347838A (zh) 2022-03-14 2023-03-13 壓電體、積層構造體、電子器件、電子機器及其製造方法

Country Status (3)

Country Link
JP (1) JP7651229B2 (https=)
TW (1) TW202347838A (https=)
WO (1) WO2023176756A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4228569B2 (ja) * 2001-11-28 2009-02-25 セイコーエプソン株式会社 電子デバイス用基板の製造方法及び電子デバイスの製造方法
JP4092556B2 (ja) * 2002-11-11 2008-05-28 セイコーエプソン株式会社 圧電体デバイス及び強誘電体デバイスの製造方法
US20110079883A1 (en) * 2009-10-01 2011-04-07 Canon Kabushiki Kaisha Ferroelectric thin film
JP7011760B2 (ja) * 2016-11-15 2022-01-27 アドバンストマテリアルテクノロジーズ株式会社 膜構造体の製造方法
JP6498821B1 (ja) 2018-06-13 2019-04-10 アドバンストマテリアルテクノロジーズ株式会社 膜構造体及びその製造方法

Also Published As

Publication number Publication date
JP7651229B2 (ja) 2025-03-26
JPWO2023176756A1 (https=) 2023-09-21
WO2023176756A1 (ja) 2023-09-21

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