JP7651229B2 - 積層構造体、電子デバイス、電子機器及びシステム - Google Patents
積層構造体、電子デバイス、電子機器及びシステム Download PDFInfo
- Publication number
- JP7651229B2 JP7651229B2 JP2024508142A JP2024508142A JP7651229B2 JP 7651229 B2 JP7651229 B2 JP 7651229B2 JP 2024508142 A JP2024508142 A JP 2024508142A JP 2024508142 A JP2024508142 A JP 2024508142A JP 7651229 B2 JP7651229 B2 JP 7651229B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- laminated structure
- epitaxial
- substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000013078 crystal Substances 0.000 claims description 109
- 239000000758 substrate Substances 0.000 claims description 101
- 230000010287 polarization Effects 0.000 claims description 24
- 229910052735 hafnium Inorganic materials 0.000 claims description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010408 film Substances 0.000 description 214
- 229910052751 metal Inorganic materials 0.000 description 37
- 239000002184 metal Substances 0.000 description 37
- 150000001875 compounds Chemical class 0.000 description 34
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 24
- 239000000470 constituent Substances 0.000 description 14
- 238000010030 laminating Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 13
- 238000000151 deposition Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 125000004430 oxygen atom Chemical group O* 0.000 description 11
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 8
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 4
- 239000006096 absorbing agent Substances 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 239000011358 absorbing material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 150000002484 inorganic compounds Chemical class 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004984 smart glass Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910020276 Pb(Zr,Ti) O3 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000747 cardiac effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical group [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- -1 oxynitrides Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical class S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
- H10N30/045—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022038741 | 2022-03-14 | ||
| JP2022038741 | 2022-03-14 | ||
| JP2022138840 | 2022-08-31 | ||
| JP2022138840 | 2022-08-31 | ||
| PCT/JP2023/009574 WO2023176756A1 (ja) | 2022-03-14 | 2023-03-13 | 圧電体、積層構造体、電子デバイス、電子機器及びこれらの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023176756A1 JPWO2023176756A1 (https=) | 2023-09-21 |
| JP7651229B2 true JP7651229B2 (ja) | 2025-03-26 |
Family
ID=88023698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024508142A Active JP7651229B2 (ja) | 2022-03-14 | 2023-03-13 | 積層構造体、電子デバイス、電子機器及びシステム |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7651229B2 (https=) |
| TW (1) | TW202347838A (https=) |
| WO (1) | WO2023176756A1 (https=) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003163176A (ja) | 2001-11-28 | 2003-06-06 | Seiko Epson Corp | 電子デバイス用基板、電子デバイス用基板の製造方法および電子デバイス |
| JP2004165243A (ja) | 2002-11-11 | 2004-06-10 | Seiko Epson Corp | 圧電体デバイス、液体吐出ヘッド、強誘電体デバイス及び電子機器並びにこれらの製造方法 |
| JP2011093788A (ja) | 2009-10-01 | 2011-05-12 | Canon Inc | 強誘電体薄膜 |
| JP2018081975A (ja) | 2016-11-15 | 2018-05-24 | 株式会社ユーテック | 膜構造体及びその製造方法 |
| JP2019216181A (ja) | 2018-06-13 | 2019-12-19 | アドバンストマテリアルテクノロジーズ株式会社 | 膜構造体及びその製造方法 |
-
2023
- 2023-03-13 TW TW112109205A patent/TW202347838A/zh unknown
- 2023-03-13 WO PCT/JP2023/009574 patent/WO2023176756A1/ja not_active Ceased
- 2023-03-13 JP JP2024508142A patent/JP7651229B2/ja active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003163176A (ja) | 2001-11-28 | 2003-06-06 | Seiko Epson Corp | 電子デバイス用基板、電子デバイス用基板の製造方法および電子デバイス |
| JP2004165243A (ja) | 2002-11-11 | 2004-06-10 | Seiko Epson Corp | 圧電体デバイス、液体吐出ヘッド、強誘電体デバイス及び電子機器並びにこれらの製造方法 |
| JP2011093788A (ja) | 2009-10-01 | 2011-05-12 | Canon Inc | 強誘電体薄膜 |
| JP2018081975A (ja) | 2016-11-15 | 2018-05-24 | 株式会社ユーテック | 膜構造体及びその製造方法 |
| JP2019216181A (ja) | 2018-06-13 | 2019-12-19 | アドバンストマテリアルテクノロジーズ株式会社 | 膜構造体及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202347838A (zh) | 2023-12-01 |
| JPWO2023176756A1 (https=) | 2023-09-21 |
| WO2023176756A1 (ja) | 2023-09-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8864288B2 (en) | Piezoelectric device, method of manufacturing piezoelectric device, and liquid ejection head | |
| CN101355134B (zh) | 压电元件、喷墨头、角速度传感器及其制法、喷墨式记录装置 | |
| JP7813461B2 (ja) | 積層構造体及びその製造方法、電子デバイス、電子機器並びにシステム | |
| JP7659927B2 (ja) | 積層構造体、電子デバイス、電子機器及びシステム | |
| JP7813463B2 (ja) | 積層構造体及びその製造方法、電子デバイス、電子機器並びにシステム | |
| JP7651229B2 (ja) | 積層構造体、電子デバイス、電子機器及びシステム | |
| JP7751917B2 (ja) | 素子、電子デバイス、電子機器及びシステム | |
| JP7651230B2 (ja) | 積層構造体、電子デバイス、電子機器及びシステム | |
| JP7651231B2 (ja) | 積層構造体、電子デバイス、電子機器及びシステム | |
| JP7652463B2 (ja) | 積層構造体、電子デバイス、電子機器及びシステム | |
| JP7659926B2 (ja) | 積層構造体、圧電素子、電子デバイス、電子機器及びシステム | |
| JP7813462B2 (ja) | 積層構造体及びその製造方法、電子デバイス、電子機器並びにシステム | |
| JP7851661B2 (ja) | 積層構造体 | |
| JP2023134330A (ja) | 圧電体、積層構造体、電子デバイス、電子機器及びこれらの製造方法 | |
| JP5842372B2 (ja) | 圧電デバイスおよびその製造方法 | |
| JP2023109679A (ja) | 積層構造体、電子デバイス、電子機器及びこれらの製造方法 | |
| JP7851603B2 (ja) | 積層構造体及びその製造方法、電子デバイス、電子機器並びにシステム | |
| JP7851608B2 (ja) | 素子、電子デバイス、電子機器及びシステム、並びに、圧電体膜の製造方法 | |
| CN118613609A (zh) | 层叠结构体、电子器件、电子设备及它们的制造方法 | |
| JP7851609B2 (ja) | 素子、電子デバイス、電子機器及びシステム、並びに、圧電体膜の製造方法 | |
| JP2024061965A (ja) | 自立膜、積層構造体、素子、電子デバイス、電子機器及びシステム | |
| JP2024068247A (ja) | 積層構造体、素子、電子デバイス、電子機器及びシステム | |
| JP7851610B2 (ja) | 素子、電子デバイス、電子機器及びシステム、並びに、圧電体膜の製造方法 | |
| JP2023109682A (ja) | 形状記憶材料、積層構造体、電子デバイス、電子機器及びこれらの製造方法 | |
| JP2024072007A (ja) | 積層構造体、素子、電子デバイス、電子機器及びシステム |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20240802 |
|
| A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20240802 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20241112 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20241225 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20250218 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20250306 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7651229 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |