TW202347009A - 反射型光罩基底、反射型光罩基底之製造方法、反射型光罩、反射型光罩之製造方法 - Google Patents
反射型光罩基底、反射型光罩基底之製造方法、反射型光罩、反射型光罩之製造方法 Download PDFInfo
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- TW202347009A TW202347009A TW112113774A TW112113774A TW202347009A TW 202347009 A TW202347009 A TW 202347009A TW 112113774 A TW112113774 A TW 112113774A TW 112113774 A TW112113774 A TW 112113774A TW 202347009 A TW202347009 A TW 202347009A
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- Prior art keywords
- film
- reflective mask
- reflective
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Links
- 238000004519 manufacturing process Methods 0.000 title claims description 24
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- 239000000758 substrate Substances 0.000 claims abstract description 82
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- 229910052719 titanium Inorganic materials 0.000 claims abstract description 14
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 13
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- 229910052763 palladium Inorganic materials 0.000 claims abstract description 12
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 12
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- 239000010948 rhodium Substances 0.000 claims description 98
- 238000000034 method Methods 0.000 claims description 54
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- 229910052703 rhodium Inorganic materials 0.000 claims description 24
- 238000004544 sputter deposition Methods 0.000 claims description 22
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 18
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
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- 239000010936 titanium Substances 0.000 claims description 13
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- 238000000059 patterning Methods 0.000 claims description 9
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 239000010408 film Substances 0.000 description 449
- 239000010410 layer Substances 0.000 description 159
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- 239000011521 glass Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
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- 230000003287 optical effect Effects 0.000 description 5
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- 229910000929 Ru alloy Inorganic materials 0.000 description 4
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- 229910019832 Ru—Si Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000013039 cover film Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
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- 238000001900 extreme ultraviolet lithography Methods 0.000 description 2
- 238000005187 foaming Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
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- 239000002245 particle Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910001257 Nb alloy Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 229910006360 Si—O—N Inorganic materials 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
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- 229910052702 rhenium Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- 229910000500 β-quartz Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/52—Reflectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022-067594 | 2022-04-15 | ||
| JP2022067594 | 2022-04-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202347009A true TW202347009A (zh) | 2023-12-01 |
Family
ID=88329767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112113774A TW202347009A (zh) | 2022-04-15 | 2023-04-13 | 反射型光罩基底、反射型光罩基底之製造方法、反射型光罩、反射型光罩之製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250036020A1 (https=) |
| JP (1) | JPWO2023199888A1 (https=) |
| KR (1) | KR20250005111A (https=) |
| TW (1) | TW202347009A (https=) |
| WO (1) | WO2023199888A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025159053A1 (ja) * | 2024-01-24 | 2025-07-31 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスクおよび反射型マスクの製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130111524A (ko) * | 2010-07-27 | 2013-10-10 | 아사히 가라스 가부시키가이샤 | Ｅｕｖ 리소그래피용 반사층 형성 기판, 및 ｅｕｖ 리소그래피용 반사형 마스크 블랭크 |
| JP2014127630A (ja) * | 2012-12-27 | 2014-07-07 | Asahi Glass Co Ltd | Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法 |
| JP7479884B2 (ja) * | 2020-03-18 | 2024-05-09 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 |
| JP7679357B2 (ja) | 2020-03-30 | 2025-05-19 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 |
| JP7318607B2 (ja) * | 2020-07-28 | 2023-08-01 | Ａｇｃ株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法 |
-
2023
- 2023-04-10 JP JP2024514954A patent/JPWO2023199888A1/ja active Pending
- 2023-04-10 WO PCT/JP2023/014544 patent/WO2023199888A1/ja not_active Ceased
- 2023-04-10 KR KR1020247033742A patent/KR20250005111A/ko active Pending
- 2023-04-13 TW TW112113774A patent/TW202347009A/zh unknown
-
2024
- 2024-10-09 US US18/911,231 patent/US20250036020A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20250036020A1 (en) | 2025-01-30 |
| JPWO2023199888A1 (https=) | 2023-10-19 |
| KR20250005111A (ko) | 2025-01-09 |
| WO2023199888A1 (ja) | 2023-10-19 |
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