KR20250005111A - 반사형 마스크 블랭크, 반사형 마스크 블랭크의 제조 방법, 반사형 마스크, 반사형 마스크의 제조 방법 - Google Patents

반사형 마스크 블랭크, 반사형 마스크 블랭크의 제조 방법, 반사형 마스크, 반사형 마스크의 제조 방법 Download PDF

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Publication number
KR20250005111A
KR20250005111A KR1020247033742A KR20247033742A KR20250005111A KR 20250005111 A KR20250005111 A KR 20250005111A KR 1020247033742 A KR1020247033742 A KR 1020247033742A KR 20247033742 A KR20247033742 A KR 20247033742A KR 20250005111 A KR20250005111 A KR 20250005111A
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KR
South Korea
Prior art keywords
film
reflective mask
mask blank
content
reflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247033742A
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English (en)
Korean (ko)
Inventor
와타루 니시다
다이지로 아카기
히로아키 이와오카
히로시 하네카와
다이가 후데타니
마사루 호리
다카요시 츠츠미
Original Assignee
에이지씨 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이지씨 가부시키가이샤 filed Critical 에이지씨 가부시키가이샤
Publication of KR20250005111A publication Critical patent/KR20250005111A/ko
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020247033742A 2022-04-15 2023-04-10 반사형 마스크 블랭크, 반사형 마스크 블랭크의 제조 방법, 반사형 마스크, 반사형 마스크의 제조 방법 Pending KR20250005111A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022067594 2022-04-15
JPJP-P-2022-067594 2022-04-15
PCT/JP2023/014544 WO2023199888A1 (ja) 2022-04-15 2023-04-10 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法

Publications (1)

Publication Number Publication Date
KR20250005111A true KR20250005111A (ko) 2025-01-09

Family

ID=88329767

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247033742A Pending KR20250005111A (ko) 2022-04-15 2023-04-10 반사형 마스크 블랭크, 반사형 마스크 블랭크의 제조 방법, 반사형 마스크, 반사형 마스크의 제조 방법

Country Status (5)

Country Link
US (1) US20250036020A1 (https=)
JP (1) JPWO2023199888A1 (https=)
KR (1) KR20250005111A (https=)
TW (1) TW202347009A (https=)
WO (1) WO2023199888A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025159053A1 (ja) * 2024-01-24 2025-07-31 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスクおよび反射型マスクの製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021200325A1 (ja) 2020-03-30 2021-10-07 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130111524A (ko) * 2010-07-27 2013-10-10 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사층 형성 기판, 및 ｅｕｖ 리소그래피용 반사형 마스크 블랭크
JP2014127630A (ja) * 2012-12-27 2014-07-07 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法
JP7479884B2 (ja) * 2020-03-18 2024-05-09 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP7318607B2 (ja) * 2020-07-28 2023-08-01 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021200325A1 (ja) 2020-03-30 2021-10-07 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Also Published As

Publication number Publication date
US20250036020A1 (en) 2025-01-30
JPWO2023199888A1 (https=) 2023-10-19
WO2023199888A1 (ja) 2023-10-19
TW202347009A (zh) 2023-12-01

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Date Code Title Description
PA0105 International application

Patent event date: 20241010

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application