TW202346022A - Apparatus and method for selective material removal during polishing - Google Patents

Abstract

Apparatus and methods for correcting asymmetry in a thickness profile by use of a Chemical Mechanical Planarization (CMP) process. In one embodiment, a CMP system includes a polishing pad, an adhesion layer, and a platen. The polishing pad includes has a polishing surface, a second surface that is positioned opposite to the polishing surface in a first direction, and a plurality of cavities formed in the second surface. The platen includes a body that comprises a pad supporting surface and one or more ports formed in the body, configured to receive a positive or negative pressure that is generated from a fluid control device. Each of the plurality of cavities is in fluid communication with at least one of the one or more ports and the adhesion layer is disposed between the pad supporting surface of the platen and a portion of the second surface of the polishing pad.

Description

Apparatus and methods for selective material removal during grinding

Embodiments of the present disclosure relate generally to chemical mechanical polishing (CMP), and more specifically, to correcting thickness asymmetry during CMP processing.

Integrated circuits are typically formed on a semiconductor substrate by sequentially depositing conductor, semiconductor, or insulating layers on the substrate. Various manufacturing processes require planarization of layers on the substrate. For example, one fabrication step involves depositing and planarizing a filler layer on a non-planar surface. For some applications, the filler layer is planarized until the top surface of the patterned layer is exposed. For example, a metal layer can be deposited on a patterned insulating layer to fill trenches and holes in the insulating layer. After planarization, the remaining portions of the metal in the trenches and holes of the patterned layer form vias, plugs, and lines to provide conductive paths between integrated circuits (ICs) on the substrate. As another example, a dielectric layer can be deposited over a patterned conductive layer and then planarized to enable subsequent photolithography steps.

Chemical mechanical polishing (CMP) is a well-established planarization method. This planarization method typically requires the substrate to be mounted on a carrier head. The exposed surface of the substrate (the surface on which the layer is deposited) is typically placed against a rotating polishing pad. The carrier head provides controlled loading of the substrate to push it against the polishing pad. Polishing slurry with abrasive particles is usually supplied to the surface of the polishing pad and spread between the substrate and the polishing pad. The polishing pad and carrier head each rotate at a constant rotational speed and the polishing slurry removes material from one or more layers. Material is removed in a planar manner and the material removal process is symmetrical about the central axis of the substrate. Symmetric removal processes can be problematic because substrates with asymmetric non-uniform thickness profiles will remain asymmetrical after the CMP process is complete due to uniform material removal rates across the substrate surface during grinding and will require further grinding. Therefore, CMP processing lacks tunability at the device or functional level. In most cases, keeping the over polish (OP) window low is a known strategy for keeping device range low. However, a low OP window can lead to unwanted residues on the wafer, including polar or radial residues, and subsequent reworking of the wafer through the grinder, resulting in a non-selective grinding process that grinds Both dies with unwanted residues and dies without unwanted residues.

For example, asymmetric thickness of the substrate may cause circuits formed in the substrate to have different RC time constants for integrated circuits in a device or die formed on opposite sides or edges of the same surface of the substrate due to the formation of ICs on the thinner edges of the substrate have less metal than ICs formed on the thicker edges of the substrate. The resulting integrated circuit will have processing speeds that vary depending on the corresponding substrate thickness. Therefore, changes in the RC time constant lead to undesirable changes in the performance and quality of the device. Although described as being on opposite sides or edges, the locations of the thinnest and thickest sides or regions of the substrate may be at other asymmetric locations on the substrate.

Accordingly, there is a need in the art for an apparatus and method for correcting asymmetry in the topology of a substrate surface during CMP processing.

Embodiments of the present disclosure provide a method of removing material from a substrate, including the steps of: pressing a device surface of the substrate against a polishing surface of a polishing pad disposed on a surface of a platform, wherein the polishing pad includes: a second surface, on a first one direction is positioned opposite the grinding surface, and a plurality of cavities are formed in the second surface, and the platform includes one or more ports, and each of the one or more ports is in fluid communication with a cavity of the plurality of cavities. . The method of removing material also includes translating the substrate relative to the polishing surface of the polishing pad and applying positive or negative pressure to a cavity of the plurality of cavities through a port in fluid communication with the cavity, wherein applying the positive or negative pressure to the cavity results in The first portion of the polishing surface of the polishing pad changes its position relative to the second portion of the polishing surface when measured in a first direction.

Embodiments of the present disclosure may further provide a method of removing material from a substrate. The method of removing material also includes pressing the device surface of the substrate against the polishing surface of a polishing pad disposed on the surface of the platform, wherein the polishing pad may include: a second surface positioned opposite to the polishing surface in the first direction, and a plurality of A cavity is formed in the second surface. The platform may include one or more ports, with each of the one or more ports in fluid communication with one of the plurality of cavities. The method of removing material also includes translating the substrate relative to the polishing surface of the polishing pad while applying a first positive pressure or a first negative pressure to the cavity through a port in fluid communication with a first cavity of the plurality of cavities, wherein toward the first cavity applying a first positive pressure or a first negative pressure to the chamber causing the first portion of the polishing surface of the polishing pad to change its position relative to the second portion of the polishing surface as measured in a first direction; and by interacting with a first portion of the plurality of chambers. When a second positive pressure or a second negative pressure is applied to the port in fluid communication between the two chambers, the substrate is translated relative to the polishing surface of the polishing pad, wherein applying the second positive pressure or the second negative pressure to the chamber causes the polishing surface of the polishing pad to The third part changes its position relative to the second part of the abrasive surface when measured in the first direction. Other embodiments of this aspect include corresponding computer systems, devices, and computer programs recorded on one or more computer storage devices, each configured to perform the actions of the method.

Embodiments of the present disclosure may further provide a chemical mechanical polishing (CMP) system, which includes a polishing pad. The polishing pad includes a polishing surface, a second surface positioned opposite to the polishing surface in a first direction, and a plurality of cavities formed in in the second surface. The polishing pad may also include an adhesive layer. The CMP system will include a platform including a body including a pad support surface, and one or more ports formed in the body, the one or more ports configured to receive positive or negative pressure generated from the fluid control device. Each of the plurality of cavities of the polishing pad is in fluid communication with at least one of the one or more ports, and an adhesive layer, if present, is disposed between the pad support surface of the platform and a portion of the second surface of the polishing pad.

Embodiments of the present disclosure may further provide a chemical mechanical polishing (CMP) polishing pad. The polishing pad includes a polishing surface, a second surface positioned opposite to the polishing surface in a first direction, and a plurality of cavities formed in the second surface. . The polishing pad may also include an adhesive layer. Each of the plurality of cavities of the polishing pad is configured in fluid communication with at least one of a plurality of ports formed in the pad support surface of the platform on which the polishing pad is disposed. And an adhesive layer, if present, is disposed between the pad support surface of the platform and a portion of the second surface of the polishing pad.

In the following description, details are set forth by way of example to facilitate an understanding of the disclosed subject matter. However, it should be apparent to one of ordinary skill in the art that the disclosed embodiments are exemplary and not exhaustive of all possible embodiments. Therefore, it should be understood that reference to the described examples is not intended to limit the scope of the present disclosure. Any changes and further modifications in the apparatus, instruments, methods described, and any further applications of the principles of the disclosure are entirely contemplated as would normally occur to one of ordinary skill in the art to which this disclosure relates. In particular, it is fully contemplated that features, elements, and/or steps described with respect to one embodiment may be combined with features, elements, and/or steps described with respect to other embodiments of the present disclosure. As used herein, the term "about" may refer to a difference of +/- 10% from the nominal value. It should be understood that such variations may be included in any value provided herein.

Aspects of the present disclosure provide apparatus and methods for correcting asymmetries in thickness profiles through the use of chemical mechanical polishing (CMP) processes.

With the embodiments described herein, over-grinding of uneven substrate surfaces after CMP processing can be avoided. Embodiments described herein allow selective rework of a substrate after an initial CMP process by limiting the area and number of die on the at least partially ground substrate exposed to further CMP processing. In this way, selective grinding can be achieved.

In some grinding systems, a platform and a carrier head are used, and the grinding pad is disposed on and secured to the platform. The substrate to be polished is placed between the carrier head and the polishing pad. The carrier head and/or platform and polishing pad rotate when a slurry containing abrasive particles is applied to the surface of the polishing pad. A membrane in the carrier head is used to apply pressure to the substrate during grinding to adjust the material removal rate and control the planarization and uniformity results achieved on the substrate. However, before being milled, the substrate may have an initial asymmetrical, non-uniform thickness profile through the use of a conventional CMP process. This often results in poor performance during grinding and grinding due to the symmetrical material removal rates provided in conventional CMP processes. The asymmetric thickness profile remains unchanged thereafter. As discussed further below, to offset the initial asymmetric thickness profile, a selective removal profile is created using one or more embodiments described herein. Selective removal of the profile, when known, combined with the substrate's initial asymmetric thickness profile can produce a milled substrate with a highly uniform and symmetrical final thickness profile.

The initial thickness profile of the substrate and the location of remaining residues can be determined using different measurement or metrology tools and methods, including but not limited to interferometry or full-wafer imaging. In certain embodiments, a metrology station may be used to measure thickness profiles and/or locate indices of residue locations on the wafer. The thickness profile may reference features or markings on the substrate through reference mapping of the surface of the substrate. For example, the substrate may include a V-shaped notch at its perimeter or edge, and the orientation of the thickness profile noted or recorded with reference to the notch. As discussed further below, reference mapping is used in developing selective removal contours.

In some embodiments, selective contour removal can be achieved by changing the contact surface of the polishing pad with the device side of the substrate. As discussed further below, by changing the contact surface of the polishing pad with the device side of the substrate, the polishing process can be selective at the die or feature level such that additional polishing is focused on and/or limited to having residual residue of bare crystal. In this manner, a selective removal profile can be created that identifies one or more discrete areas through which the upper surface of the polishing pad contacts the device side of the substrate. Selective removal of contours can be achieved via an algorithm-driven die tracker that receives an index of the location of the residue on the surface of the substrate and sets the position between the carrier head and the platform for a given relative motion between the substrate and the platform. or the rotational speed of the substrate in the platform, identifying the residue locations that will pass through discrete areas of the polishing pad as a function of time. Therefore, an algorithm-driven die tracker can establish discrete paths across the surface of the polishing pad during the polishing process. In some embodiments, an index of residue locations is manually entered into a computer, which in turn outputs discrete grinding paths. In other embodiments, an index of the residue location is automatically sent to a computer, which in turn outputs a discrete grinding path.

This application generally refers to the rotation, rate of rotation, rate of rotation, velocity, and/or speed associated with the movement of the carrier head 210 (FIG. 2). However, it should be understood that, unless otherwise stated, such discussion will apply similarly to the substrate 115 as it contacts and rotates with the carrier head 210 . Although this application refers to spin rate, spin rate, speed, and speed, these terms are not meant to be limiting and may be used interchangeably unless specifically stated otherwise. For example, velocity can mean velocity or the magnitude of velocity (eg, velocity) with velocity and direction.

Figure 1 is a top view illustrating one embodiment of a chemical mechanical polishing (CMP) system 100. CMP system 100 includes factory interface module 102, cleaner 104, and grinding module 106. Wet robot 108 is provided to transfer substrate 115 between factory interface module 102 and grinding module 106 . Wet robot 108 may also be configured to transfer substrate 115 between grinding module 106 and cleaner 104 . The factory interface module 102 includes a dry robot 110 configured to transfer substrates 115 between one or more cassettes 114 , one or more metrology stations 117 , and one or more transfer platforms 116 . In some embodiments, as shown in Figure 1, four substrate cassettes 114 are shown. The dry robot 110 within the factory interface 102 has sufficient range of motion to facilitate transfers between the four bins 114 and one or more transfer platforms 116 . Alternatively, the dry robot 110 may be mounted on a rail or track 112 to position the robot 110 laterally within the factory interface module 102 . Dry robot 110 is also configured to receive substrates 115 from cleaner 104 and return cleaned ground substrates to substrate storage cassette 114 .

Still referring to FIG. 1 , the grinding module 106 includes a plurality of grinding stations 124 on which the substrate 115 is ground while being held in the carrier head 210 . The grinding station 124 is sized to interface with one or more carrier heads 210 so that grinding of the substrate 115 can be performed in a single grinding station 124 . The carrier head 210 is coupled to a bracket (not shown) that is mounted to the overhead track 128 shown in dashed lines in FIG. 1 . The elevated track 128 allows the carriage to be selectively positioned around the grinding module 106 , which facilitates the selective positioning of the carrier head 210 over the grinding station 124 and loading shroud 122 . In some embodiments, as shown in FIG. 1 , the elevated track 128 has a circular configuration that allows the carriage holding the load head 210 to selectively and independently rotate over and/or away from the loading hood 122 and the grinding station 124 .

In some embodiments, as shown in FIG. 1 , three grinding stations 124 are shown located in the grinding module 106 . At least one loading cover 122 is located in the corner of the grinding module 106 between the grinding stations 124 closest to the wet robot 108 . Loading shroud 122 facilitates transfer between wet robot 108 and loader head 210 .

Each grinding station 124 includes a grinding pad 204 having a grinding surface (eg, grinding surface 204A in FIG. 2 ) capable of grinding the substrate 115 . Each grinding station 124 includes one or more carrier heads 210 , an adjustment assembly 132 , and a grinding fluid delivery module 135 . In some embodiments, the conditioning assembly 132 may include a pad conditioning assembly 140 that conditions the polishing surface of the polishing pad 204 by using the pad conditioning disc 133 to remove polishing debris and open the pores of the polishing pad 204 . In other embodiments, the grinding fluid delivery module 135 may include a fluid delivery arm 134 to deliver slurry. Each grinding station 124 includes a pad adjustment assembly 132 . In some embodiments, fluid delivery arm 134 is configured to deliver a fluid flow (eg, fluid 222 in FIG. 2 ) to grinding station 124 . The polishing pad 204 is supported on a platform (eg, platform 202 in Figure 2) that rotates to polish the surface during processing. Platform 202 includes a body 203 having a pad support surface 327 . CMP system 100 is coupled to power source 180 .

In some embodiments, a substrate 115 , such as a silicon wafer with one or more layers deposited thereon, is loaded into the CMP system 100 via a cassette 114 . The substrate 115 will typically have notches, flats, or other types of reference marks that can be used to record the rotational orientation of the major surface of the substrate relative to the central axis. The factory interface module 102 removes the substrate 115 from the cassette 114 to begin processing while the controller 190 coordinates the operation of the CMP system 100 . The factory interface module 102 transfers the substrate 115 to the metrology station 117 which measures the thickness profile of the substrate 115 as well as an index locating the location of the residue on the surface of the substrate 115 . Metrology station 117 may use interferometry, full-wafer imaging, or other useful processing, as described with respect to FIG. 2 . Controller 190 receives the measurements and orientation of the thickness profile from metrology station 117 and uses one or more fiducial marks or notches to track the orientation of the thickness profile while processing substrate 115 . The factory interface module 102 transfers the substrate 115 to the transfer platform 116 , and the wet robot 108 transfers the substrate through subsequent processing elements including the CMP system 100 . In some embodiments, metering station 117 is part of factory interface module 102 . In other embodiments, metering station 117 is housed in a separate module (not shown) connected to factory interface module 102 .

Loading hood 122 has multiple functions, including receiving substrates 115 from wet robot 108 , cleaning substrates 115 , and loading substrates 115 into a carrier head (eg, carrier head 210 in FIG. 2 ). Each grinding station includes a grinding pad 204 secured to a rotatable platform 202 . Different polishing pads 204 may be used at different polishing stations 124 to control material removal of the substrate 115 . The aspect of CMP system operation is further described in Figure 2.

In some embodiments, the factory interface module 102 may further include a pre-aligner 118 to position the substrate 115 in a known and desired rotational orientation. Pre-alignment of the substrate with the desired rotational orientation allows the substrate to be positioned and oriented such that the substrate is rotatable relative to the carrier head 210 when the substrate is transported by one or more robots in the system to a position where the carrier head 210 can receive the substrate. Platform 202 is oriented in a known and desired direction. Pre-aligner 118 includes a notch detection system, such as an optical break sensor (not shown), to sense when a substrate notch is at a specific angular position. The substrate 115 , which may be in an uncertain angular position, for example, after a grinding operation, has a known orientation when scanned by the metrology station 117 , thereby allowing an accurate determination of the measured x-y (or r-θ) position on the substrate 115 .

In some embodiments, the substrate 115 is moved by the dry robot 110 to a metrology station 117 that measures properties of the substrate 115 as described herein. For example, the factory dry robot 110 "picks up" the substrates, such as by vacuum suction, and transports the unpolished substrates to the metrology station 117 . Metrology station 117 can perform a plurality of thickness or residue position measurements on substrate 115 . The controller 190 may determine discrete polishing paths based on the thickness of the substrate 115 and/or the location of the residue.

Dry robot 110 then transfers each substrate 115 to transfer platform 116 , and then wet robot 108 transfers the substrates to different grinding stations 124 within CMP system 100 . Finally, the substrate 115 is loaded into the loading hood 122 so that the carrier head 210 can retain the substrate 115 and transport the substrate 115 to each of one or more grinding stations 124 for CMP processing according to selected grinding parameters. During CMP, controller 190 controls the status of grinding station 124. In some embodiments, controller 190 is one or more programmable digital computers executing digital control software. Controller 190 may include a processor 192 located proximate the grinding device, such as a programmable computer, such as a personal computer. The controller may include memory 194 and support circuitry 196 . For example, controller 190 may coordinate contact between substrate 115 and polishing pad 204 at different rotational speeds such that the selective removal profile is aligned with an index of residue location on substrate 115 (eg, an asymmetric thickness profile of substrate 115). Aligning these profiles ensures that the thickest portions of the substrate 115 remove the most material during the grinding process and reduces substrate 115 asymmetry. Controller 190 is further described in FIG. 6 . The controller 190 may be a plurality of controllers 190 . In some embodiments, the controller 190 includes a liquid dispenser module (LDM) for controlling the FCV 404 and a fluid control device 402, such as a pump 402.

After grinding, the wet robot 108 transfers the substrate 115 from the loading hood 122 to a cleaning chamber in the cleaner 104 where slurry and other contaminants accumulated on the substrate surface during the grinding process are removed. In the embodiment shown in FIG. 1 , the cleaner 104 includes two pre-cleaning modules 144 , two megasonic cleaner modules 146 , two brush box modules 148 , a spray module 150 and two dryers 152 .

Dry robot 110 then removes substrate 115 from cleaner 104 and transfers substrate 115 to metrology station 117 for measurement again. In certain embodiments, post-polishing layer measurements may be used to adjust subsequent substrate polishing process parameters. Finally, the dry robot 110 returns the substrate 115 to one of the cassettes 114 .

FIG. 2 depicts a schematic cross-sectional view of the grinding station 124 of the CMP system 100 of FIG. 1 including a grinding assembly 200 having a grinding pad 204 formed in accordance with embodiments described herein. In particular, FIG. 2 shows how the carrier head 210 is positioned relative to the polishing pad 204. A coordinate system 201 having an x-, y-, and z-axis illustrates the orientation of the various elements of the abrasive assembly 200 in this and subsequent figures. Coordinate system 201 shows the positive directions of the x-, y-, and z-axes as well as the positive direction of rotation about the z-axis, ie, the counterclockwise direction. The opposite direction (not shown) is the negative direction.

In some embodiments, the polishing pad 204 is secured to the pad support surface 327 of the platform 202 using an adhesive layer 220, such as a pressure sensitive adhesive (PSA) layer, as shown in FIG. 3, disposed between the polishing pad 204 and the platform 202. between the pad support surfaces 327. In some embodiments, the PSA layer may include rubber resin, acrylic, or silicone-containing materials. Facing the platform 202 and the polishing pad 204 mounted thereon, the carrier head 210 includes a flexible diaphragm 212 configured to target the substrate disposed between the carrier head 210 and the polishing pad 204 in different areas of the flexible diaphragm 212 115 exerts different pressures on its surface. The carrier head 210 includes a carrier ring 218 surrounding the substrate 115 which holds the substrate in place. The carrier head 210 rotates about the carrier head axis 216 while the flexible diaphragm 212 pushes the surface to be polished of the substrate 115 , such as the device side of the substrate 115 , against the polishing surface 204A of the polishing pad 204 . During the grinding process, the downward pressure on the carrier ring 218 urges the carrier ring 218 to abut against the grinding pad 204 to improve the uniformity of the grinding process and prevent the substrate 115 from sliding out from under the carrier head 210 . In some embodiments, the carrier head 210 includes a shaft 211 having an axis that is collinear with the carrier head axis 216 . In some embodiments, the platform 202 and the carrier head 210 each have a rotation sensor (not shown), such as an encoder, to measure their angular position and/or rate of rotation as they rotate, and a mechanism or motor ( not shown) drive their rotation.

In some embodiments, polishing pad 204 rotates about platform axis 205 . Polishing pad 204 has a polishing pad axis 206 that is collinear with platform axis 205 . In some embodiments, the polishing pad 204 rotates in the same direction of rotation as the rotation direction of the carrier head 210 . For example, both the polishing pad 204 and the carrier head 210 rotate in a counterclockwise direction. As shown in FIG. 2 , the polishing pad 204 has a surface area larger than the surface area to be polished of the substrate 115 . However, in some embodiments, polishing pad 204 has a smaller surface area than the surface area to be polished of substrate 115 .

In some embodiments, the end point detection (EPD) system 224 detects an optically clear window feature 227 directed from the light source toward the substrate 115 through the platform opening 226 and the polishing pad 204 disposed above the platform opening 226 during processing. The reflected light is then passed through these elements back to a detector (not shown) within the EPD system 224 to detect the properties of the layer formed on the surface of the substrate during grinding. If the angular and radial position of the EPD system 224 within the platform 202 relative to the angular and lateral position of the notch of the substrate 115 is known, the EPD system 224 may allow thickness and/or residual analysis of the substrate 115 when using the abrasive assembly 200 Object position measurement. In some embodiments, the eddy current probe is used to measure the conductive layer formed on a region of the surface of the substrate 115 by comparing the relative angle and position of the substrate 115 or the recess of the carrier head 210 to the EPD system 224 within the platform 202 thickness.

Notably, application may refer to rotation, rotation rate, velocity, and/or speed of the carrier head 210 . It should be understood that this discussion also applies to the substrate 115 unless otherwise stated, as the substrate 115 typically rotates with the carrier head 210 .

During polishing, fluid 222 is introduced to the polishing pad 204 through the fluid delivery arm 134 portion of the polishing fluid delivery module 135 located above the polishing pad 204 . In some embodiments, fluid 222 is a grinding fluid, grinding slurry, cleaning fluid, or combinations thereof. In some embodiments, the slurry may include water-based chemicals containing abrasive particles. Fluid 222 may also include pH adjusters and/or chemically active ingredients, such as oxidants, to achieve CMP of the material surface of substrate 115 in conjunction with polishing pad 204 . As the carrier head 210 pushes the substrate toward the polishing pad 204, the fluid 222 removes material from the substrate.

Figure 3A is a side view of the polishing pad 204 and platform 202 of a CMP system according to some embodiments. In some embodiments, as shown in FIG. 3A , the polishing pad 204 includes a base layer 307 and a polishing layer 308 . Abrasive layer 308 includes abrasive structures 309 that are formed or bonded to, or are an inseparable part of, base layer 307 . In some embodiments, the base layer 307 and the polishing layer 308 of the polishing pad 204 are formed layer by layer using a 3D printing process. In some embodiments, abrasive layer 308 includes materials with different mechanical and/or chemical properties than the materials in base layer 307 . In one example, abrasive layer 308 includes a polymeric material that has a greater hardness than the material in base layer 307 .

In some embodiments, polishing pad 204 is secured to platform 202 via adhesive layer 220 . Adhesion layer 220 may be a PSA layer. In some embodiments, adhesive layer 220 is disposed between base layer 307 and platform 202 . The platform 202 further includes a plurality of ports 323 formed therethrough (described further below with respect to FIG. 4A ) and thus extending from the pad support surface 327 of the platform to a second surface 328 of the platform 202 , the second surface 328 being consistent with the pad support surface. 327 relative. Each of the plurality of ports 323 has a first end 331 close to the base layer 307 of the polishing pad 204 and a second end 333 away from the polishing pad 204 . At a first end 331 of each of the plurality of ports 323 , a plurality of cavities 325 are formed between the platform 202 and the polishing pad 204 such that each of the plurality of ports 323 is fluidly coupled to a corresponding cavity of the plurality of cavities 325 325. Cavity 325 is generally defined by a lower portion of polishing pad 204 , such as lower surface 307A of a portion of base layer 307 , and a portion of pad support surface 327 of platform 202 . In some examples, one or more cavities 325 are substantially hemispherical or curved relative to a vertical plane (eg, the XZ plane in Figure 3A). In other embodiments, one or more cavities 325 are concentric radial grooves centered about the central axis of platform 204 . In other embodiments, one or more cavities 325 are formed in radially positioned sectors (e.g., a disk bounded by two radii separated by an arc angle, an inner radius, and an outer radius) when viewed in the -Z direction. part), which is centered on the central axis of platform 204. In other embodiments, one or more cavities 325 are substantially dome-shaped, with vertical linear walls, as shown in Figure 3A. In this configuration, the pump 402 may include a first device (eg, a vacuum pump) configured to generate a vacuum that may be applied to a first portion of the plurality of chambers 325 and/or a second device (eg, a mechanical pump or gas source (eg, air, N ₂ , He source)) configured to generate and apply positive pressure to the second portion of the plurality of cavities 325 . In many of the embodiments described herein, the cavities 325 may be generally described as similar to blind holes or blind channel regions, such that fluid (eg, gas or Liquids) can only enter or exit the enclosed area through port 323 in fluid communication with the open area of cavity 325.

In some configurations, a plurality of port rotational feedthroughs 251 may be coupled between each FCV 404 and each of the plurality of ports 323 to allow the pump 402 to communicate with the cavity disposed on the port 323 formed on the rotational platform 202 325 fluid connection. In some embodiments, the rotating feedthrough 251 is a Ferro-fluidic type feedthrough. In other embodiments, rotating feedthrough 251 is a rotating feedthrough that includes a plurality of sealing members (eg, O-rings).

Figure 3B is a side view of the polishing pad 204 and platform 202 of the CMP system according to some embodiments. As shown in FIG. 3B , the retracted region 310 of the polishing pad 204 is retracted such that at least a portion of the polishing surface 204A of the polishing pad 204 is retracted relative to the unretracted region 312 of the polishing surface 204A such that the retracted region 310 is no longer is in contact with the surface of the substrate 115 to be polished, and a retraction gap 330 is generated between the retracted portion of the polishing pad 204 and the surface of the substrate 115 in contact with the non-retracted area 312 . The retracted region 310 of the polishing pad 204 is retractable by a pump 402 configured to create a vacuum to the first portion of the plurality of cavities 325 . In one example, a retraction gap of about 50 micrometers (μm) to about 200 μm, or even about 50 μm to about 75 μm may be used to avoid contact between the retraction region 310 of the polishing pad 204 and the surface of the substrate 115 to be polished. undesired abrasive contact between.

By using a plurality of ports 323, areas 310 of the polishing surface 204A of the polishing pad 204 can be retracted and prevented from contacting the surface of the substrate 115 to be polished at specific times during a polishing process, such as a CMP process. In other words, by timing the evacuation of each cavity 325 , by using signals from the controller 190 to control the opening and closing of the FCV 404 , the location of the residue relative to the surface of the substrate at any time is determined based on one or more cavities 325 Accordingly, regions of the substrate surface where the residue is located may include higher material removal rates than regions that do not contain residue. Furthermore, by preventing contact with the surface of the substrate 115 to be ground, embodiments described herein allow for the creation and implementation of selective removal profiles whereby only desired areas of the substrate 115, such as one or more residue locations, are ground. In turn, this selective removal of profiles allows for higher overall throughput and grinding efficiency.

Figure 4A is a top view of platform 202 of a CMP system in accordance with some embodiments. In some embodiments, the plurality of ports 323 are arranged in a circular array positioned in concentric rings disposed relative to the central axis 205 of the platform 202 . Each of the plurality of ports 323 may be equidistantly spaced on concentric rings. In some embodiments, as shown in FIG. 4A , the plurality of ports 323 are arranged into concentric channels 403 that are radially aligned relative to the central axis 205 of the platform 202 . In this configuration, each of the plurality of ports 323 may be equidistantly spaced on concentric channels 403 . For example, as shown in Figure 4A, there may be three concentric channels of eight equally spaced (along the ring) ports 323. It is contemplated that there may be fewer than 25 ports 323, such as 24 or less, or even between 15 and 25 ports. In some embodiments, there may be more than 25 ports 323, such as more than 50 ports 323. It is further contemplated that two or more concentric rings may be utilized, such as three or more rings, four or more rings, five or more rings, or even six or more rings. Alternative patterns of ports 323 are also contemplated, such as non-radial or concentric grid patterns, sector patterns, rectangular patterns, or patterns aligned with the direction of the pad grooves (eg, aligned with a spiral groove pattern formed in the polishing pad). In some embodiments, ports 323 are arranged in a radial pattern extending from central axis 205 of platform 202 . In some embodiments, each of the plurality of ports 323 is respectively fluidly coupled to a flow control valve (FCV) 404 (FIG. 3A). In some embodiments, each of the flow control valves (FCV) 404 is coupled to a pressure regulating device (not shown) configured to regulate the pressure in the chamber 325 when the flow control valve is opened during processing. Position. In some embodiments, a group of two or more of ports 323 are fluidly coupled to a flow control valve (FCV) 404 . In some embodiments, all FCVs are coupled to a single pump 402 (Figure 3A). In some embodiments, each of the plurality of ports 323 is fluidly coupled to a corresponding one of the plurality of FCVs 404 and a corresponding one of the plurality of pumps 402 .

In some embodiments, the pump 402 is a vacuum pump configured to generate a vacuum within each selected port 323 of the plurality of ports 323 such that when the pump 402 applies vacuum pressure to the chamber 325 , each of the corresponding chambers 325 is at least is partially retracted, and the corresponding area of the polishing pad 202 (ie, the retracted area 310 ) is retracted from the surface of the substrate 115 disposed on the non-retracted area 312 of the polishing pad 202 . For example, as shown in FIG. 4B , the retracted region 310 of the polishing pad 204 (ie, shown as a dotted area) is retracted such that at least a portion 204C of the polishing surface 204A of the polishing pad 204 is relative to other portions 204B of the polishing surface 204A. Retracted so that these portions 204C are no longer in contact with portions 115A of the surface of the substrate 115 to be ground. Each retracted region 310 may correspond to a remaining region 115A that does not need to be polished at as high a rate as the portion 115B of the surface of the substrate 115 that is in contact with the non-retracted region 312 . It is also contemplated that the cavities 325 directly beneath the high residue area will be filled with gas at a higher atmospheric pressure than the cavities 325 in the surrounding area of the polishing pad 202 to increase the hardness of the polishing pad and thereby alter the polishing characteristics of the polishing pad 202, such as to increase the grinding rate.

During operation, as the polishing pad rotates and the substrate is pushed against the surface of the polishing pad 202 by the carrier head 210, discrete paths 425 across the surface of the polishing pad are developed and implemented using the controller 190 during the polishing process. For example, discrete grinding path 425 in Figure 4B is a portion of an orbital path traversed by a portion of the substrate during a portion of the grinding process. Discrete grinding paths 425 are formed at least in part by rotation of the grinding pad 204 and the carrier head 210 about their respective central axes in a clockwise or counterclockwise direction. Typically, as the polishing pad 204 and carrier head 210 rotate during a CMP process, the carrier head 210 also translates relative to the platform 202 in an arcuate or radial motion. Discrete path 425 is thus formed by a combination of translation of carrier head 210 relative to platform 202 and rotation of polishing pad 204 and carrier head 210, which is monitored by the controller such that the formation of retracted areas 310 and unretracted areas 312 can occur at Desired moments are generated in time to specifically change the grinding profile of different areas of the surface of the substrate.

FIG. 5 is a method 500 of selectively grinding a substrate according to some embodiments, which may be performed in a grinding system such as the CMP system 100 shown in FIG. 1 . Although the process sequence described with respect to FIG. 5 focuses primarily on the operations for performing the selective grinding process, this shortened list of operations is not intended to limit the scope of the disclosure described herein, as the operations discussed with respect to the selective grinding process may be preceded by, Other grinding processing operations may be inserted during or after this without departing from the essential scope of the disclosure provided herein. For example, one or more cleaning operations may be performed on the substrate in the cleaner 104 within the CMP system 100 before or after performing the method 500 of selective grinding on the substrate.

In operation 502 , a substrate such as substrate 115 is first removed from a cassette such as cassette 114 , and then the orientation of substrate 115 is determined by an aligner such as aligner 118 . The substrate 115 is then transferred to a metrology tool, such as a metrology station 117, for processing. In some embodiments, at the beginning of method 500, the surface of substrate 115 is an unpolished surface.

At operation 504 , a metrology tool, such as metrology station 117 , locates one or more residue areas on the surface of substrate 115 . Residue areas include areas of varying thickness relative to the average thickness of the substrate, such as relatively "high spots" or "high areas" on the surface of the substrate. In some embodiments, locating one or more residue areas may involve integrating a camera or other imager to obtain die-level topography, thickness information, or other optical property information such as opacity. In some embodiments, interferometry can be used to locate one or more residue areas that require further grinding. The metrology tool may be in-situ or ex-situ relative to the grinding system 100.

At operation 506 , a controller, such as controller 190 , receives information regarding one or more residue areas, which are also referred to herein as "indices" of residue locations on the at least partially ground substrate 115 and the rotation rate of the polishing pad 204 from the first sensor 260 coupled to the platform 202 and/or the second sensor 270 coupled to the carrier head 210 and outputs a selective removal profile of the substrate 115 . The selective removal profile may be an identified polishing path based on known processing conditions, such as rotational and translational rates of the carrier head 210 and/or the polishing pad 204 disposed on the platform 202 . In some embodiments, the index of the residue position and the rotation rate information are manually provided to the controller 190 by the user. In other embodiments, the index of residue position and rotation rate information are automatically provided to the controller 190 through various sensors and/or through the use of a local controller coupled to the controller 190 via a communication network.

In operation 507 , a surface of a substrate to be polished, such as substrate 115 , is pushed against polishing pad 204 by a carrier head, such as carrier head 210 , in the CMP process. Prior to operation 507 , the substrate 115 is placed in a desired orientation within the carrier head 210 using a robot based on the alignment determined during operation 504 . In some embodiments, the controller 190 determines the desired alignment of the substrate 115 in the carrier head 210 so that the desired grinding path of one or more residue areas on the surface of the substrate can be controlled. The controller 190 may coordinate the movement of one or more residue areas on the surface of the substrate 115 across areas of the polishing pad by controlling the rotation and/or translation of the carrier head 210 and/or the rotation rate of the platform 202 .

At operation 508 , a vacuum is created in the corresponding port 323 using the controller 190 , a pump such as pump 402 , and a selected valve such as a selected one of the plurality of FCVs 402 such that during the current portion of the CMP process, the grinding A portion or portions of pad 204 are retracted and are not in contact with residue-free areas of the surface of substrate 115 . It is also contemplated that instead of the retracted portion of the polishing pad 204 , portions of the polishing pad 204 may be expanded by filling selected cavities 325 with pressurized fluid such that only the pressurized portion of the polishing pad and the residue formed on the surface of the substrate 115 contain residue Areas of contact (e.g., high spots) are contacted during the current portion of the CMP process. It is also contemplated that the selective removal of contours from portions of the surface of the substrate identified during operations 504-506 may be controlled by pump 402 and The selected FCV 402 is adjusted on the fly. In some embodiments, the controller 190 is configured to regulate the application of positive or negative pressure to the cavity 325 as the substrate translates relative to the polishing surface of the polishing pad 204 , wherein the application of the positive or negative pressure to the cavity 325 is The location to cavity 325 based on one or more residue locations. Adjusting the application of positive or negative pressure to cavity 325 may include adjusting the positive or negative pressure level in cavity 325 between two or more times. Regulating the application of positive or negative pressure to chamber 325 may also include applying negative pressure at a first time, and then not applying negative pressure at a second time (eg, venting the chamber to atmospheric pressure), applying positive pressure, and then applying no positive pressure at a second moment (e.g., venting the chamber to atmospheric pressure), or even applying negative or positive pressure at a first moment, and then applying positive or negative pressure, respectively, at a second moment pressure.

At operation 510 , the at least partially polished surface of the substrate 115 is pushed against the unretracted region 312 of the polishing pad 204 by elements within the carrier head 210 such that only one or more selected portions of the polishing pad 204 contact the at least partially polished surface. The surface of the substrate 115. It is also contemplated that reduced but not eliminated contact may still be used to substantially reduce the material removal rate in certain areas of the substrate surface (eg, a retraction gap from about 1 μm to about 50 μm). Operations 506 to 510 may optionally be repeated to further grind the die that are not within a good planarization range (eg, about <100 Å or less).

FIG. 6 depicts the functional blocks of one example of a controller 190 for a carrier head (eg, carrier head 210 in FIG. 2 ) and/or a stage or polishing pad (eg, stage 202 or polishing pad 204 in FIG. 2 ). Figure. The controller 190 includes a processor 192 that communicates with a memory 194, an input device 630, and an output device 640. Although not shown, controller 190 may include a set of distributed local controllers in communication with controller 190 . The local controller may include similar elements as shown and discussed herein with respect to controller 190. In some embodiments, the processor 192 further communicates with an optional network interface card 650 for communicating with various sensors, automation components, robots, and other useful devices. Although described separately, it should be understood that the functional blocks described with respect to controller 190 need not be separate structural elements. For example, processor 192 and memory 620 are implemented in a single die. Processor 192 may be a general purpose processor, a digital signal processor ("DSP"), an application specific integrated circuit (ASIC), a field programmable gate array ("FPGA"), or or other programmable logic devices, discrete gate or transistor logic, discrete hardware components, or any suitable combination thereof. A processor may also be implemented as a combination of computing devices, such as a combination of a DSP and a microprocessor, a plurality of microprocessors, one or more microprocessors combined with a DSP core, or any other such configuration.

Processor 192 may be coupled via one or more buses to read information from or write information to memory 620 . A processor may additionally or alternatively include memory, such as processor registers. Memory 620 may include processor cache, including multi-level hierarchical cache, where different levels have different capacities and access speeds. Memory 620 may also include random access memory (RAM), other volatile storage devices, or non-volatile storage devices. Memory may include hard drives, flash memory, etc. In various cases, memory is referred to as a computer-readable storage medium. Computer-readable storage media are non-transitory devices capable of storing information and are distinguishable from computer-readable transmission media such as electronic transient signals capable of carrying information from one location to another. Computer-readable media described herein may generally refer to computer-readable storage media or computer-readable transmission media.

Processor 192 may also be coupled to input device 630 and output device 640 to receive input from and provide output to a user of controller 190, respectively. Suitable input devices include, but are not limited to, keyboards, buttons, keys, switches, pointing devices, mice, joysticks, remote controls, infrared detectors, barcode readers, scanners, cameras (which may be coupled to video processing software). connected to, for example, detecting gestures or facial gestures), a motion detector, or a microphone (which may be coupled to audio processing software, for example to detect voice commands). Input device 630 includes an encoder or other sensor to measure rotation of carrier head 210 or platform 202, as discussed in FIG. 2 . Suitable output devices include, but are not limited to, visual output devices including monitors and printers, audio output devices including speakers, headphones, earphones, and alarms, additive manufacturing machines, and tactile output devices. As discussed in FIG. 2 , output device 640 includes various electronic components configured to drive and control mechanisms or motors used to drive rotation of carrier head 210 or platform 202 .

In some embodiments, processor 192 includes a timing element 615 such as a crystal or resistor-capacitor combination and serves as part of an internal oscillator. The timing element may be used by the processor 192 to keep time, and may be used with an encoder to calculate rotation rate, for example.

In further embodiments, input device 630, output device 640, network interface card 650, and/or other components are considered support circuitry (eg, the support circuitry in Figure 1).

With the embodiments described herein, over-grinding of uneven substrate surfaces after CMP processing can be avoided. As previously described, embodiments described herein allow selective rework of a substrate after an initial CMP process by limiting the area and number of die on the at least partially ground substrate exposed to further CMP processing. In this way, selective grinding of even 1 or 2 individual dies is possible. The approach described herein allows device-level planarity by increasing die grinding control and selectivity.

The foregoing description is provided to enable any person of ordinary skill in the art to practice the various embodiments described herein. The examples discussed herein do not limit the scope, applicability, or embodiments set forth in the patent claims. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments. For example, changes may be made in the function and arrangement of elements discussed without departing from the scope of the disclosure. Various examples may omit, substitute, or add various processes or elements as appropriate. For example, the described methods may be performed in an order different from that described, and various steps may be added, omitted, or combined. Furthermore, features described with respect to some paradigms can be combined in some other paradigms. For example, an apparatus may be implemented or a method practiced using any number of aspects set forth herein. Furthermore, the scope of the disclosure is intended to encompass such devices or devices practiced using other structures, functions, or structures and functions in addition to or other than the various aspects of the disclosure set forth herein. method. It is to be understood that any aspect of the disclosure disclosed herein may be embodied by one or more elements of the claimed scope.

The methods disclosed herein include one or more steps or actions for achieving the method. Method steps and/or actions may be interchanged with each other without departing from the scope of the claimed patent. In other words, unless a specific order of steps or actions is specified, the order and/or use of specific steps and/or actions may be modified without departing from the scope of the claimed claims. In addition, various operations of the above methods can be performed by any suitable means capable of performing corresponding functions. Means may include various hardware and/or software components and/or modules, including but not limited to circuits, application specific integrated circuits (ASICs), or processors. Generally, where operations are shown in the figures, those operations can have corresponding means-plus-function elements with similar counting.

100:Chemical Mechanical Polishing (CMP) System 102:Factory interface module 104:Cleaner 106:Grinding module 108: Wet robot 110: Dry robot 112:Orbit 114:Box 115:Substrate 115A:Part 115B:Part 116:Transmission platform 117:Metering station 118:Pre-aligner 122:Loading cover 124:Grinding station 128: Elevated track 132:Adjusting components 133: Pad adjustment disk 134: Fluid transfer arm 135:Grinding fluid delivery module 140: Pad adjustment assembly 144: Pre-cleaning module 146: Megasonic cleaner module 148: Brush box module 150:Injection module 152: Dryer 180:Power supply 190:Controller 192: Processor 194:Memory 196:Support circuit 200:Grinding components 201:Coordinate system 202:Platform 203:Subject 204: Polishing pad 204A: Grinding surface 204B:Part 204C: Part 205:Platform axis 206:Grinding pad axis 210: Bearing head 211:shaft 212: Flexible diaphragm 216: Bearing head axis 218: Bearing ring 220:Adhesive layer 222:Fluid 224:Endpoint Detection (EPD) System 227: Optically transparent window features 251: Rotating feedthrough 307: Basal layer 307A: Lower surface 308: Grinding layer 309: Grinding structure 310:Retract area 312: Unretracted area 323:port 325: cavity 327: Pad support surface 328: Second surface 330:Retract gap 331:First end 333:Second end 402: Fluid control device (pump) 403:Concentric channel 404: Flow control valve (FCV) 425: Discrete path 500:Method 502: Operation 504: Operation 506: Operation 507: Operation 508: Operation 510: Operation 615: Timing component 630:Input device 640:Output device 650:Network interface card

Thus, the manner in which the above-described features of the present disclosure may be understood in detail, a more specific description of the present disclosure, briefly summarized above, may be obtained by reference to the embodiments, some of which are illustrated in the accompanying drawings. It is to be noted, however, that the accompanying drawings illustrate only example embodiments and are therefore not to be considered limiting of their scope, for other equally effective embodiments may be permitted.

Figure 1 depicts a schematic top view of an exemplary chemical mechanical polishing system in accordance with embodiments described herein.

2 depicts a schematic cross-sectional view of an exemplary grinding station from the chemical mechanical polishing system of FIG. 1 in accordance with embodiments described herein.

3A-3B depict schematic side views of an exemplary polishing pad and platform from the chemical mechanical polishing system of FIG. 1 in accordance with embodiments described herein.

4A-4B depict schematic top views of an exemplary platform assembly from the chemical mechanical polishing system of FIG. 1 in accordance with embodiments described herein.

Figure 5 depicts a method of selectively grinding a substrate according to embodiments described herein.

Figure 6 is a functional block diagram illustrating elements of a controller in accordance with embodiments described herein.

To facilitate understanding, where possible, the same reference symbols have been used to refer to common identical elements in the drawings. It is contemplated that elements and features of one embodiment may be beneficially incorporated into other embodiments without further recitation.

Domestic storage information (please note in order of storage institution, date and number) without Overseas storage information (please note in order of storage country, institution, date, and number) without

202:Platform

203:Subject

204: Polishing pad

204A: Grinding surface

251: Rotating feedthrough

307: Basal layer

307A: Lower surface

308: Grinding layer

309: Grinding structure

323:port

325: cavity

327: Pad support surface

328: Second surface

331:First end

333:Second end

402: Fluid control device (pump)

404: Flow control valve (FCV)

Claims (20)

A method for removing material on a substrate includes the following steps: A device surface of a substrate is pressed against a polishing surface of a polishing pad disposed on a surface of a platform, wherein This polishing pad includes: a second surface positioned opposite the grinding surface in a first direction, and a plurality of cavities formed in the second surface, and The platform includes one or more ports, and each of the one or more ports is in fluid communication with one of the plurality of cavities; translating the substrate relative to the polishing surface of the polishing pad; and A positive pressure or a negative pressure is applied to a cavity of the plurality of cavities through the port in fluid communication with the cavity, wherein applying the positive pressure or the negative pressure to the cavity results in a first polishing surface of the polishing pad. A portion changes its position relative to a second portion of the abrasive surface when measured in the first direction. The method of claim 1, wherein the step of applying the positive pressure or the negative pressure to the cavity in the plurality of cavities further includes the step of: causing a pump to deliver a gas to the cavity or to remove a gas from the cavity. gas. The method of claim 2, wherein the pump is a vacuum pump. The method of claim 1, wherein the step of applying the positive pressure or the negative pressure to the cavity in the plurality of cavities further includes the step of: positioning the first portion of the polishing surface of the polishing pad relative to the polishing pad. A gap of 50 μm to about 200 μm is formed between the second portions of the surface in the first direction. The method of claim 1, further comprising the step of adjusting the application of the positive pressure or the negative pressure to the cavity when the substrate is translated relative to the polishing surface of the polishing pad. The method described in claim 1 further includes the following steps: determining the location of one or more residues on the device surface of the substrate, Wherein, the application of the positive pressure or the negative pressure to the cavity is performed when the substrate is translated relative to the polishing surface of the polishing pad, and the application of the positive pressure or the negative pressure to the cavity is based on the substrate The determined location of the one or more residues on the surface of the device to the location of the cavity. A method for removing material on a substrate includes the following steps: A device surface of a substrate is pressed against a polishing surface of a polishing pad disposed on a surface of a platform, wherein This polishing pad includes: a second surface positioned opposite the grinding surface in a first direction, and a plurality of cavities formed in the second surface, and The platform includes one or more ports, and each of the one or more ports is in fluid communication with one of the plurality of cavities; Translating the substrate relative to the polishing surface of the polishing pad while applying a first positive pressure or a first negative pressure to the cavity via the port in fluid communication with the cavity, wherein Applying the first positive pressure or the first negative pressure to the first chamber causes a first portion of the polishing surface of the polishing pad to change its position relative to a second portion of the polishing surface when measured in the first direction. ;and Translating the substrate relative to the polishing surface of the polishing pad while applying a second positive pressure or a second negative pressure to the cavity via the port in fluid communication with a second cavity of the plurality of cavities, wherein Applying the second positive pressure or the second negative pressure to the chamber causes a third portion of the polishing surface of the polishing pad to change its position relative to the second portion of the polishing surface when measured in the first direction. The method of claim 7, further comprising a pump for translating the substrate relative to the polishing surface of the polishing pad when generating a first negative pressure into a first chamber. The method of claim 8, wherein applying the first negative pressure to the first chamber results in a gap between the first portion of the polishing surface of the polishing pad relative to the second portion of the polishing surface. A gap of 50 μm to about 200 μm is formed in the direction. The method of claim 7, wherein applying the second negative pressure to the cavity results in a gap between the third portion of the polishing surface of the polishing pad relative to the second portion of the polishing surface in the first direction. A gap of 50 μm to about 200 μm is formed upward. The method of claim 7, further comprising the step of adjusting the application of the positive pressure or the negative pressure to the cavity when the substrate is translated relative to the polishing surface of the polishing pad. The method described in claim 7 further includes the following steps: Determining the location of one or more residues on the device surface of the substrate; and When the substrate translates relative to the polishing surface of the polishing pad, the application of the positive pressure or the negative pressure to the cavity is adjusted by using a controller, wherein the application of the positive pressure or the negative pressure to the cavity The adjustment applied is based on the determined location of the one or more residues to the location of the cavity. A chemical mechanical polishing (CMP) system consisting of: One polishing pad, including: a grinding surface; a second surface positioned opposite the grinding surface in a first direction; and a plurality of cavities formed in the second surface, and an adhesive layer; and A platform including: a body including a pad support surface; and one or more ports formed in the body, the one or more ports configured to receive a positive pressure or a negative pressure generated from a fluid control device, in Each of the plurality of cavities of the polishing pad is in fluid communication with at least one of the one or more ports, and The adhesive layer is disposed between the pad support surface of the platform and a portion of the second surface of the polishing pad. The CMP system of claim 13, wherein the polishing pad further includes a polishing layer and a base layer, wherein the polishing layer includes the polishing surface and the base layer includes the second surface. The CMP system of claim 13, wherein the one or more ports further include a plurality of ports arranged into two or more concentric arrays of ports. The CMP system of claim 13, wherein each of the plurality of cavities is substantially dome-shaped. The CMP system of claim 13, wherein each of the plurality of cavities is defined by a portion of the second surface of the polishing pad, a portion of the adhesive layer, and a portion of the pad support surface of the platform. The CMP system of claim 13, wherein the one or more ports are arranged in a radial pattern extending from a center of the platform. The CMP system of claim 13, wherein the one or more ports are arranged in the platform in a grid or random pattern. The CMP system of claim 13, further comprising computer-implemented instructions stored in memory that, when executed by a processor, are configured to perform a method of processing a substrate, the method Includes the following steps: abutting a device surface of a substrate against the polishing surface of the polishing pad; Translating the substrate relative to the polishing surface of the polishing pad and the pad support surface of the platform; and A positive pressure or a negative pressure is applied to a cavity of the plurality of cavities through the port in fluid communication with the cavity, wherein applying the positive pressure or the negative pressure to the cavity results in a first polishing surface of the polishing pad. A portion changes its position relative to a second portion of the abrasive surface when measured in the first direction.